Document No.001-88131 Rev. *A ECN # 4432506 Cypress Semiconductor Product Qualification Report QTP# 082808 VERSION *A July 2014 B53D-3GR Technology, Fab 4 CYRF7936 Wireless USB™ LP2.4 GHz Radio SoC FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 10 Document No.001-88131 Rev. *A ECN # 4432506 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 99256 New Technology, B53D-3, Fab 4, CY7B993V / CY7B994V Aug 2000 082808 WUSB-LP CYRF7936 Device Qual using B53D-3GR Technology, Fab 4 Jul 2008 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 10 Document No.001-88131 Rev. *A ECN # 4432506 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify CYRF7936 Device in qualified B53D-3GR Technology in Fab4 Marketing Part #: CYRF7936 Device Description: 3.3V, Wireless USB™ LP 2.4GHz Radio SoC available in 40-Pin QFN Cypress Division: Cypress Semiconductor Corporation – Consumer & Computation Division (CCD) Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev. A CY7B6936A TECHNOLOGY/FAB PROCESS DESCRIPTION – B53D-3GR Number of Metal Layers: 2 Metal Composition: Metal 1: 500Å TiW / 6000Å Al / 500Å TiW Metal 2: 500Å TiW / 8000Å Al / 500Å TiW 1,000A TEOS + 9,000A Si2N4 Passivation Type and Materials: Free Phosphorus contents in top glass layer (%): 0% Die Coating(s), if used: N/A Number of Transistors in Device 120K Number of Gates in Device 30K Generic Process Technology/Design Rule (µ- CMOS, 0.25 µm Gate Oxide Material/Thickness (MOS): SiO2 / 55Å Name/Location of Die Fab (prime) Facility: Cypress Minnesota, Fab4 Die Fab Line ID/Wafer Process ID: Fab4/B53D-3 ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA, KYEC Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 10 Document No.001-88131 Rev. *A ECN # 4432506 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: 40 Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: LY40 40-pin QFN Sumitomo EME-G700 V-O per UL94 Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: 100% Matte Sn Die Backside Preparation Method/Metallization: Back Grinding Die Separation Method: 100% Saw Die Attach Supplier: Ablestik Die Attach Material: 8290 Die Attach Method: Epoxy Cure Bond Diagram Designation 001-00499 Wire Bond Method: Thermosonic Wire Material/Size: Au 1.0mil Thermal Resistance Theta JA °C/W: 21.2°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-10994 Name/Location of Assembly (prime) facility: Amkor-Seoul Korea-K1 (SEOUL-L) PACKAGE AVAILABILITY PACKAGE 40-Pin QFN ASSEMBLY SITE FACILITY Amkor-Seoul Korea (SEOUL-L) Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 10 Document No.001-88131 Rev. *A ECN # 4432506 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test High Temperature Operating Life Early Failure Test Condition (Temp/Bias) Dynamic Operating Condition, Vcc = 3.8V, 125°C Dynamic Operating Condition, Vcc = 4.0V, 125°C Resul t P/F P Dynamic Operating Condition, Vcc = 3.8V, 125°C Dynamic Operating Condition, Vcc = 4.0V, 125°C P High Temperature Steady State Life 125°C, 3.63V P Long Life Verification Dynamic Operating Condition, Vcc = 4.0V, 125°C P Low Temperature Operating Life Dynamic Operating Condition, Vcc = 4.3V, -30°C P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs., 30°C/60%RH+3IR-Reflow, 220°C+0, -5°C P Pressure Cooker 121°C, 100%RH P High Temperature Operating Life Latent Failure Rate MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs., 30°C/60%RH+3IR-Reflow, 220°C+0, -5°C High Accelerated Saturation Test 130°C, 85%RH, 3.63V P MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs., 30°C/60%RH+3IR-Reflow, 220°C+0, -5°C Electrostatic Discharge Human Body Model (ESD-HBM) 1100V/2200V JESD22, Method A114-B P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V/750V ESD22-C101C P High Temperature Storage 150°C, no bias P Age Bond Strength MIL-STD-883C, Method 2011 P Acoustic Microscopy J-STD-020 P Dynamic Latch up JESD78 P Latch up Sensitivity 125°C, ± 200mA/300mA In accordance with JEDEC 17. P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 10 Document No.001-88131 Rev. *A ECN # 4432506 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life1,2 Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate 1,020 Devices 0 N/A N/A 0 PPM 703,484 DHRs 0 0 .7 55 15 FIT Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 10 Document No.001-88131 Rev. *A ECN # 4432506 Reliability Test Data QTP #: Fab Lot # Device STRESS: 99256 Assy Lot # Assy Loc Duration Samp Rej ACOUSTIC, MSL3 CY7B993V-AC 1937245 619937409 TAIWN-G COMP 15 0 CY7B994V-ACB 1942384 610003953 TAIWN-G COMP 15 0 CY7B994V-AC 1949608 340000124 TAIWN-G COMP 15 0 STRESS: HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RATE, 125C, 4.0V, >Vcc Max CY7B994V-AC 1009007 610021056 TAIWN-G 96 672 0 CY7B993V-AC 1937245 619937409 TAIWN-G 96 665 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 96 664 0 CY7B994V-AC 1949608 340000124 TAIWN-G 96 681 0 STRESS: HIGH TEMP DYNAMIC OPERTING LIFE-LATENT FAILURE RATE, 125C, 4.0V, >Vcc Max CY7B993V-AC 1937245 619937409 TAIWN-G 168 235 0 CY7B994V-ACB 1937245 619937409 TAIWN-G 770 234 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 168 232 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 770 232 0 CY7B994V-AC 1949608 340000124 TAIWN-G 168 236 0 CY7B994V-AC 1949608 340000124 TAIWN-G 770 224 0 STRESS: LONG LIFE VERIFICATION 125C, 4.0V, >Vcc Max CY7B993V-AC STRESS: 1937245 619937409 TAIWN-G 2000 170 0 AGE BOND STRENGTH CY7B993V-AC 1937245 619937409 TAIWN-G COMP 3 0 CY7B994V-ACB 1942384 610003953 TAIWN-G COMP 6 0 CY7B994V-AC 1949608 340000124 TAIWN-G COMP 6 0 STRESS: ESD-CHARGE DEVICE MODEL, 750V CY7B994V-AC 1937245 619936456S TAIWN-G COMP 3 0 CY7B994V-ACB 1942384 610003953 TAIWN-G COMP 3 0 CY7B994V-AC 1949608 340000124 TAIWN-G COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 1,100V CY7B994V-AC 1937245 619936456S TAIWN-G COMP 3 0 CY7B994V-ACB 1942384 610003953 TAIWN-G COMP 3 0 CY7B994V-AC 1949608 340000124 TAIWN-G COMP 3 0 STRESS: Failure Mechanism DYNAMIC LATCH-UP TESTING, 6.5V CY7B994V-ACB 1942384 TAIWN-G COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 10 610003953 Document No.001-88131 Rev. *A ECN # 4432506 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 99256 Assy Loc Duration Samp Rej HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3 CY7B993V-AC 1937245 619937409 TAIWN-G 128 46 0 CY7B993V-AC 1937245 619937409 TAIWN-G 256 46 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 128 46 0 CY7B994V-AC 1949608 340000124 TAIWN-G 128 48 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3 CY7B993V-AC 1937245 619937409 TAIWN-G 168 50 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 168 46 0 CY7B994V-AC 1949608 340000124 TAIWN-G 168 48 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST, 125C, 3.63V, >Vcc Max CY7B993V-AC 1937245 619937409 TAIWN-G 168 78 0 CY7B993V-AC 1937245 619937409 TAIWN-G 336 76 0 STRESS: LOW TEMPERATURE OPERATING LIKE, -30C, 4.3V, 8MHZ CY7B993V-AC 1937245 619937409 TAIWN-G 500 50 0 CY7B993V-AC 1937245 619937409 TAIWN-G 1000 50 0 STRESS: Failure Mechanism HIGH TEMP STORGAE, PLASTIC, 150C CY7B993V-AC 1937245 619937409 TAIWN-G 500 50 0 CY7B993V-AC 1937245 619937409 TAIWN-G 1000 50 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 500 48 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 1000 48 0 CY7B994V-AC 1949608 340000124 TAIWN-G 500 48 0 CY7B994V-AC 1949608 340000124 TAIWN-G 1000 48 0 STRESS: TC CONDITION C, -65C TO 150C, PRE COND 192 HRS 30C/60% RH, MSL3 CY7B993V-AC 1937245 619937409 TAIWN-G 300 50 0 CY7B993V-AC 1937245 619937409 TAIWN-G 500 50 0 CY7B993V-AC 1937245 619937409 TAIWN-G 1000 50 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 300 46 0 CY7B994V-ACB 1942384 610003953 TAIWN-G 500 46 0 CY7B994V-AC 1949608 340000124 TAIWN-G 300 48 0 CY7B994V-AC 1949608 340000124 TAIWN-G 500 48 0 CY7B994V-AC 1949608 340000124 TAIWN-G 1000 48 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 10 Document No.001-88131 Rev. *A ECN # 4432506 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 082808 Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.8V, Vcc Max) CYRF7936 STRESS: 4530746 610560091 SEOUL-L 96 1020 0 HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CYRF7936 4530746 610560091 SEOUL-L 168 340 0 CYRF7936 4530746 610560091 SEOUL-L 500 340 0 SEOUL-L COMP 9 0 9 0 COMP 3 0 COMP 3 0 STRESS: CYRF7936 STRESS: CYRF7936 ESD-CHARGE DEVICE MODEL (500V) 4545906 610609523 ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V 4530746 610560091 SEOUL-L COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CYRF7936 4530746 610560091 SEOUL-L STRESS: STATIC LATCH-UP TESTING (125C, 5V, +/-200mA) CYRF7936 STRESS: CYRF7936 4545906 610609523 SEOUL-L PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3 4409927 610441446 SEOL-L 168 50 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192HRS 30C/60%RH, MSL3 CYRF7936 4409927 610441446 SEOL-L 300 50 0 CYRF7936 4409927 610441446 SEOL-L 500 50 0 CYRF7936 4409927 610441446 SEOL-L 1000 50 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 10 Document No.001-88131 Rev. *A ECN # 4432506 Document History Page Document Title: QTP# 082808: WIRELESS USB LP2.4 GHZ RADIO SOC "CYRF7936" B53D-3GR TECHNOLOGY, FAB 4 Document Number: 001-88131 Rev. ECN Orig. of No. Change ** 4040400 HSTO *A 4432506 HSTO Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-573 and was transferred to qualification report spec template. Updated package availability based on current qualified test & assembly site. Deleted Cypress reference Spec and replaced with Industry Standards in Reliability Test Performed Table. Align qualification report based on the new template in the front page Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 10