QTP # 094501 :PROC LP PRODUCT FAMILY(CYRF69213* , CYRF69103*), B53D-3GR S4AD-5 TECHNOLOGY, FAB 4

Document No.001-88102 Rev. *A
ECN # 4419050
Cypress Semiconductor
Product Qualification Report
QTP# 094501 VERSION*A
June, 2014
PROC™ LP PRODUCT FAMILY
B53D-3GRS4AD-5 TECHNOLOGY,
FAB 4
CYRF69213*
CYRF69103*
Programmable Radio
on Chip Low Power
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Josephine Pineda
Reliability Engineer
Reviewed By:
Rene Rodgers
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
Company Confidential
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Page 1 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
PRODUCT QUALIFICATION HISTORY
Qual
Report
054001
Description of Qualification Purpose
USB5CR Product Family on S4AD-5 Technology transfer to Fab4
Date
Comp
Oct 05
052404
WUSB-LS2 7B6936A New Device using B53D-3GR Technology in Fab4
Mar 06
062301
Qualify 40-Lead QFN Sandwich Stack Die at Amkor-Korea (L), MSL3, 260C Reflow
Dec 06
094501
Device Paper QTP for the PRoC2 dual-die stack family (CYRF69213* and CYRF69103*)
Nov 09
Company Confidential
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Page 2 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Device Paper QTP for the PRoC2 dual-die stack family (CYRF69213* and CYRF69103*)
Marketing Part #:
CYRF69213* and CYRF69103*
Device Description:
Programmable Radio on Chip Low Power
Cypress Division:
Cypress Semiconductor Corporation – Data Communication Division (DCD)
TECHNOLOGY/FAB PROCESS DESCRIPTION – B53D-3GR
Number of Metal Layers:
2
Metal Composition: Metal 1: 500Å TiW / 6000Å Al / 500Å TiW
Metal 2: 500Å TiW / 8000Å Al / 500Å TiW
Passivation Type and Materials:
1,000A TEOS + 9,000A Si2N4
Free Phosphorus contents in top glass layer (%):
0%
Die Coating(s), if used:
N/A
Number of Transistors in Device
120K
Number of Gates in Device
30K
Generic Process Technology/Design Rule (µ-drawn):
CMOS, 0.25 m
Gate Oxide Material/Thickness (MOS):
SiO2 / 55Å
Name/Location of Die Fab (prime) Facility:
Cypress Minnesota, Fab4
Die Fab Line ID/Wafer Process ID:
Fab4/B53D-3
TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5
Number of Metal Layers:
2
Metal Composition: Metal 1: 500A TiW/6,000A AlCu (0.5%)/300A TiW
Metal 2: 500A TiW/8,000A AlCu (0.5%)/300A TiW
Passivation Type and Materials:
7,000A TeOs / 6,000A Si3N4
Free Phosphorus contents in top glass layer (%):
0%
Number of Transistors in Device:
279,000
Number of Gates in Device
13,000
Generic Process Technology/Design Rule (µ-drawn):
Single Poly, Double Metal, 0.35 m
Gate Oxide Material/Thickness (MOS):
SiO2 / 100A
Name/Location of Die Fab (prime) Facility:
Cypress Semiconductor - Minnesota
Die Fab Line ID/Wafer Process ID:
Fab 4, S4AD-5 CMI, SONOS
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
KYEC, Taiwan
Company Confidential
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Page 3 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
RELIABILITY FAILURE RATE SUMMARY
Device Tested/
Device Hours
# Fails
Activation
Energy
Thermal3
A.F
Failure
Rate
High Temperature Operating Life
Early Failure Rate1
3,006 Devices
0
N/A
N/A
0 PPM
High Temperature Operating Life1, 2
Long Term Failure Rate
528,750 DHRs
0
0 .7
55
31 FIT
Stress/Test
1
2
3
Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C.
Chi-squared 60% estimations used to calculate the failure rate..
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
k = Boltzmann's constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction
temperature of the device at use conditions
Company Confidential
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Page 4 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
MAJOR PACKAGE INFORMATION FOR THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
LY40
40-Lead QFN
EME G700
V-0
Oxygen Rating Index:
NA
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
Pure Sn
Die Backside Preparation Method/Metallization: Backgrind
Die Separation Method:
Sawing
Die Attach Supplier:
Ablestik
Die Attach Material:
Ablebond 8290 (bottom), 8900NC (spacer)
Die Attach Method:
Epoxy
Bond Diagram Designation:
001-06076
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au. 1.0mil
Thermal Resistance Theta JA °C/W:
<30°C/W
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
001-00920
Name/Location of Assembly (prime) facility:
Seoul-Korea (L)
MSL Level
3
Reflow Profile
260C
PACKAGE AVAILABILITY
PACKAGE
40-Pin QFN
ASSEMBLY SITE FACILITY
Amkor-Seoul Korea (SEOUL-L)
Note: Please contact a Cypress Representative for other packages availability.
Company Confidential
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Page 5 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition
(Temp/Bias)
Dynamic Operating Condition, Vcc Max=5.5V, 125°C
High Temperature Operating Life Early Dynamic Operating Condition, Vcc = 3.8V, 125°C
Dynamic Operating Condition, Vcc = 4.0V, 125°C
Failure Rate
JESD22-A108
Dynamic Operating Condition, Vcc Max=5.5V, 125°C
Dynamic Operating Condition, Vcc = 3.8V, 125°C
High Temperature Operating Life
Latent Failure Rate
Dynamic Operating Condition, Vcc = 4.0V, 125°C
JESD22-A108
JEDEC STD 22-A110: 130°C, 5.25V,3.63V, 85%RH
Precondition: JESD22 Moisture Sensitivity Level
High Accelerated Saturation Test
(192 Hrs., 30C, 60% RH, 260°C Reflow)
(HAST)
Precondition: JESD22 Moisture Sensitivity Level
(168 Hrs, 85C/85%RH, 260°C Reflow)
High Temperature Steady State Life
Static Operating Condition, Vcc Max = 5.5V, 3.63V, 125°C
High Temperature Storage
JESD22-A103:150°C, no bias
Result
P/F
P
P
P
P
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
Electrostatic Discharge
Human Body Model (ESD-HBM)
Electrostatic Discharge
Human Body Model (ESD-HBM)
MIL-STD-883, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30C, 60% RH, 260°C Reflow)
Precondition: JESD22 Moisture Sensitivity Level
(168 Hrs, 85C/85%RH, 260°C Reflow)
JESD22-A102, 121C, 100%RH, 15 PSIG
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30C, 60% RH, 260°C Reflow)
Precondition: JESD22 Moisture Sensitivity Level
(168 Hrs, 85C/85%RH, 260°C Reflow)
500V /750V
JESD22-C101
1,100V/2,200V
JEDEC EIA/JESD22-A114
2,200V
MIL-STD-883, Method 3015.7
Endurance Test
MIL-STD-883, Method 883-1033
P
Age Bond Strength
200C, 4hrs
MIL-STD-883, Method 883-2011
P
Acoustic Microscopy
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30C, 60% RH, 260°C Reflow)
Precondition: JESD22 Moisture Sensitivity Level
(168 Hrs, 85C/85%RH, 260°C Reflow)
P
Ball Shear
JESD22-B116
P
Bond Pull
MIL-STD-883 – Method 2011
P
Current Density
Meets the Technology Device Level Reliability Specifications
P
Temperature Cycle
Pressure Cooker
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Page 6 of 17
P
P
P
P
P
Document No.001-88102 Rev. *A
ECN # 4419050
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT (CONT’D)
Stress/Test
Test Condition
(Temp/Bias)
Resul
t
P/F
P
Data Retention
150, No Bias
Die Shear
MIL-STD-883, Method 2019
P
Dynamic Latch up
125C, 8.3V
P
JESD78
Internal Visual
MIL-STD-883-2014
P
Static Latch up
125C, 200mA
JESD78
P
SEM Analysis
MIL-STD-883, Method 883-2018-2
P
Long Life Verification
Dynamic Operating Condition, Vcc = 4.0V, 125°C
JESD22-A108
P
Low Temperature Operating Life
Dynamic Operating Condition, Vcc = 5.5V, 4.3V, -30°C, 8MHZ
JESD22-A108
P
Latch up Sensitivity
125C, 11V, 200mA, 300mA
In accordance with JEDEC 17
P
X-Ray
MIL-STD-883 - 2012
P
Company Confidential
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Page 7 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
Device
Fab Lot #
052004
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL1
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
15
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
COMP
15
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
COMP
15
0
STRESS: AGE BOND STRENGTH
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
10
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
COMP
10
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
COMP
10
0
STRESS: DATA RETENTION, PLASTIC, 150C
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
500
256
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
1000
256
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
500
256
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
1000
254
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
500
252
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
1000
252
0
4516647
610521157
TAIWN-T
COMP
45
0
STRESS: ENDURANCE
CY8C21534 (8C21534A)
STRESS: ESD-CHARGE DEVICE MODEL, (500V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
3
0
Company Confidential
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Page 8 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
052004
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max)
CY8C21234 (8C21234A)
4517851
610521157
TAIWN-T
120
1002
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
120
1002
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
120
1002
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
750
235
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
750
235
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
750
235
0
STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
168
76
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
336
76
0
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH, MSL1
CY8C21234 (8C21234A)
4516647
610527569
PHIL-M
128
49
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
128
44
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
128
44
0
500
45
0
STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 168 HR 85C/85%RH, MSL1
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
168
45
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
336
45
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
168
45
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
336
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
168
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
336
45
0
STRESS: STATIC LATCH-UP TESTING (125C, 11V, r300mA)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
3
0
610521157
TAIWN-T
COMP
3
0
STRESS: DYNAMIC LATCH-UP (8.3V)
CY8C21534 (8C21534A)
4516647
Company Confidential
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Page 9 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
052004
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH, MSL1
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
300
50
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
500
50
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
1000
50
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
300
45
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
1000
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
300
45
0
Company Confidential
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Page 10 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
054001
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: E-TEST
7C6830AC
4548789
COMPARABLE
7C6830AC
4527976
COMPARABLE
7C6830AC
4528157
COMPARABLE
7C6830AC
4548789
COMPARABLE
7C6830AC
4527976
COMPARABLE
STRESS: SORT YIELD
7C6830AT
COMPARABLE
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Page 11 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
Device
Fab Lot #
99256
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY7B993V-AC
1937245
619937409
TAIWN-G
COMP
15
0
CY7B994V-ACB
1942384
610003953
TAIWN-G
COMP
15
0
CY7B994V-AC
1949608
340000124
TAIWN-G
COMP
15
0
STRESS: HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RATE, 125C, 4.0V, >Vcc Max
CY7B994V-AC
1009007
610021056
TAIWN-G
96
672
0
CY7B993V-AC
1937245
619937409
TAIWN-G
96
665
0
CY7B994V-ACB
1942384
610003953
TAIWN-G
96
664
0
CY7B994V-AC
1949608
340000124
TAIWN-G
96
681
0
STRESS: HIGH TEMP DYNAMIC OPERTING LIFE-LATENT FAILURE RATE, 125C, 4.0V, >Vcc Max
CY7B993V-AC
1937245
619937409
TAIWN-G
168
235
0
CY7B994V-ACB
1937245
619937409
TAIWN-G
770
234
0
CY7B994V-ACB
1942384
610003953
TAIWN-G
168
232
0
CY7B994V-ACB
1942384
610003953
TAIWN-G
770
232
0
CY7B994V-AC
1949608
340000124
TAIWN-G
168
236
0
CY7B994V-AC
1949608
340000124
TAIWN-G
770
224
0
STRESS: LONG LIFE VERIFICATION 125C, 4.0V, >Vcc Max
CY7B993V-AC
1937245
619937409
TAIWN-G
2000
170
0
STRESS: AGE BOND STRENGTH
CY7B993V-AC
1937245
619937409
TAIWN-G
COMP
3
0
CY7B994V-ACB
1942384
610003953
TAIWN-G
COMP
6
0
CY7B994V-AC
1949608
340000124
TAIWN-G
COMP
6
0
STRESS: ESD-CHARGE DEVICE MODEL, 750V
CY7B994V-AC
1937245
619936456S
TAIWN-G
COMP
3
0
CY7B994V-ACB
1942384
610003953
TAIWN-G
COMP
3
0
CY7B994V-AC
1949608
340000124
TAIWN-G
COMP
3
0
STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 1,100V
CY7B994V-AC
1937245
619936456S
TAIWN-G
COMP
3
0
CY7B994V-ACB
1942384
610003953
TAIWN-G
COMP
3
0
CY7B994V-AC
1949608
340000124
TAIWN-G
COMP
3
0
TAIWN-G
COMP
3
0
STRESS: DYNAMIC LATCH-UP TESTING, 6.5V
CY7B994V-ACB
1942384
610003953
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Page 12 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
99256
STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3
CY7B993V-AC
1937245
619937409
TAIWN-G
128
46
0
CY7B993V-AC
1937245
619937409
TAIWN-G
256
46
0
CY7B994V-ACB
1942384
610003953
TAIWN-G
128
46
0
CY7B994V-AC
1949608
340000124
TAIWN-G
128
48
0
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3
CY7B993V-AC
1937245
619937409
TAIWN-G
168
50
0
CY7B994V-ACB
1942384
610003953
TAIWN-G
168
46
0
CY7B994V-AC
1949608
340000124
TAIWN-G
168
48
0
STRESS: HIGH TEMP STEADY STATE LIFE TEST, 125C, 3.63V, >Vcc Max
CY7B993V-AC
1937245
619937409
TAIWN-G
168
78
0
CY7B993V-AC
1937245
619937409
TAIWN-G
336
76
0
STRESS: LOW TEMPERATURE OPERATING LIKE, -30C, 4.3V, 8MHZ
CY7B993V-AC
1937245
619937409
TAIWN-G
500
50
0
CY7B993V-AC
1937245
619937409
TAIWN-G
1000
50
0
STRESS: HIGH TEMP STORGAE, PLASTIC, 150C
CY7B993V-AC
1937245
619937409
TAIWN-G
500
50
0
CY7B993V-AC
1937245
619937409
TAIWN-G
1000
50
0
CY7B994V-ACB
1942384
610003953
TAIWN-G
500
48
0
CY7B994V-ACB
1942384
610003953
TAIWN-G
1000
48
0
CY7B994V-AC
1949608
340000124
TAIWN-G
500
48
0
CY7B994V-AC
1949608
340000124
TAIWN-G
1000
48
0
STRESS: TC CONDITION C, -65C TO 150C, PRE COND 192 HRS 30C/60% RH, MSL3
CY7B993V-AC
1937245
619937409
TAIWN-G
300
50
0
CY7B993V-AC
1937245
619937409
TAIWN-G
500
50
0
CY7B993V-AC
1937245
619937409
TAIWN-G
1000
50
0
CY7B994V-ACB
1942384
610003953
TAIWN-G
300
46
0
CY7B994V-ACB
1942384
610003953
TAIWN-G
500
46
0
CY7B994V-AC
1949608
340000124
TAIWN-G
300
48
0
CY7B994V-AC
1949608
340000124
TAIWN-G
500
48
0
CY7B994V-AC
1949608
340000124
TAIWN-G
1000
48
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 13 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
Assy Loc
052404
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.8V, Vcc Max)
CYWUSB6936
4530746
610560091
SEOUL-L
96
1020
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max)
CYWUSB6936
4530746
610560091
SEOUL-L
168
340
0
CYWUSB6936
4530746
610560091
SEOUL-L
500
340
0
SEOUL-L
COMP
9
0
9
0
COMP
3
0
COMP
3
0
STRESS: ESD-CHARGE DEVICE MODEL (500V)
CYWUSB6936
4545906
610609523
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V
CYWUSB6936
4530746
610560091
SEOUL-L
COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V
CYWUSB6936
4530746
610560091
SEOUL-L
STRESS: STATIC LATCH-UP TESTING (125C, 5V, +/-200mA)
CYWUSB6936
4545906
610609523
SEOUL-L
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3
CYWUSB6934
4409927
610441446
SEOUL-L
168
50
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192HRS 30C/60%RH, MSL3
CYWUSB6934
4409927
610441446
SEOUL-L
300
50
0
CYWUSB6934
4409927
610441446
SEOUL-L
500
50
0
CYWUSB6934
4409927
610441446
SEOUL-L
1000
50
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 14 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
094501
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CYRF69103 (7B69103A)
4548789
610638092
SEOUL-L
COMP
15
0
CYRF69103 (7B69103A)
4548789
610638093
SEOUL-L
COMP
15
0
CYRF69213 (7B69213A)
4548789
610638360
SEOUL-L
COMP
15
0
CYRF69103 (7B69103A)
4548789
610638092
SEOUL-L
COMP
10
0
CYRF69103 (7B69103A)
4548789
610638093
SEOUL-L
COMP
10
0
CYRF69213 (7B69213A)
4548789
610638360
SEOUL-L
COMP
10
0
CYRF69103 (7B69103A)
4548789
610638092
SEOUL-L
COMP
10
0
CYRF69103 (7B69103A)
4548789
610638093
SEOUL-L
COMP
10
0
CYRF69213 (7B69213A)
4548789
610638360
SEOUL-L
COMP
10
0
CYRF69103 (7B69103A)
4548789
610638092
SEOUL-L
COMP
10
0
CYRF69103 (7B69103A)
4548789
610638093
SEOUL-L
COMP
10
0
CYRF69213 (7B69213A)
4548789
610638360
SEOUL-L
COMP
10
0
STRESS: BALL SHEAR
STRESS: BOND PULL
STRESS: DIE SHEAR
STRESS: INTERNAL VISUAL
CYRF69103 (7B69103A)
4548789
610638092
SEOUL-L
COMP
5
0
CYRF69103 (7B69103A)
4548789
6106380932
SEOUL-L
COMP
5
0
CYRF69213 (7B69213A)
4548789
610638360
SEOUL-L
COMP
5
0
STRESS: ESD-CHARGE DEVICE MODEL, 500V
CYRF69103 (7B69103A)
4548789
610638092
SEOUL-L
COMP
9
0
CYRF69213 (7B69213A)
4548789
610638360
SEOUL-L
COMP
9
0
9
0
COMP
3
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-B, 2,200V
CYRF69213 (7B69213A)
4548789
610638360
SEOUL-L
COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V
CYRF69213 (7B69213A)
4548789
610638360
SEOUL-L
STRESS: STATIC LATCH-UP TESTING, 125C, 5.4V, +/200mA
CYRF69103 (7B69103A)
4548789
610638092
SEOUL-L
COMP
3
0
CYRF69213 (7B69213A)
4548789
610638360
SEOUL-L
COMP
3
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 15 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
094501
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3
CYRF69103 (7B69103A)
4548789
610638092
SEOUL-L
168
45
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3
CYRF69103 (7B69103A)
4548789
610638092
SEOUL-L
300
120
0
CYRF69103 (7B69103A)
4548789
610638093
SEOUL-L
300
119
0
CYRF69213 (7B69213A)
4548789
610638360
SEOUL-L
300
118
0
CYRF69103 (7B69103A)
4548789
610638092
SEOUL-L
COMP
15
0
CYRF69103 (7B69103A)
4548789
610638093
SEOUL-L
COMP
15
0
CYRF69213 (7B69213A)
4548789
610638360
SEOUL-L
COMP
15
0
STRESS: X-RAY
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 16 of 17
Document No.001-88102 Rev. *A
ECN # 4419050
Document History Page
Document Title:
QTP # 094501 : PROC LP PRODUCT FAMILY(CYRF69213* , CYRF69103*), B53D-3GR
S4AD-5 TECHNOLOGY, FAB 4
Document Number:
001-88102
Rev. ECN
Orig. of
No.
Change
**
4039235 ILZ
Description of Change
*A
Sunset review:
Updated QTP title page and Reliability Tests Performed table
(EFR/LFR,HAST,HTSSL,HTS,TCT,PCT,ESD-CDM/HBM,Acoustic
Microscopy,Static Latch-Up) for template alignment.
4419050 JYF
Initial Spec Release
Qualification report published on Cypress.com is documented on
memo FDW-437 and not in spec format.
Initiated spec for QTP 094501 and all data from memo# FDW-437
was transferred to qualification report spec template.
Deleted package qualification details on package qualification history
table.
Deleted Cypress reference Spec and replaced with Industry Standards
Updated package availability based on current qualified test &
assembly site.
Distribution: WEB
Posting: None
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 17 of 17