ROHM DAN202UM

Data Sheet
Switching Diode
DAN202UM
lApplications
High speed switching
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
1.3
各リードとも
同寸法
0.65
(1)
0.53±0.1
0.53±0.1
lConstruction
Silicon epitaxial planer
0.8MIN
0～0.1
0.425
2.1±0.1
1.25±0.1
0.425
(3)
0.9MIN.
Each lead has
same dimensions
lFeatures
1)Ultra small mold type. (UMD3F)
2)High reliability
(2)
0.65
0.65
1.6
0.9±0.1
2.0±0.1
+0.1
0.32 -0.05
UMD3
0.13±0.05
1.3±0.1
lStructure
ROHM : UMD3F
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
lTaping dimensions (Unit : mm)
φ 1.55±0.05
2.0±0.05
0.3±0.1
2.25±0.1
0
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
IFM
Forward current (single)
Average rectified forward voltage (single)
Io
Isurge
Surge current (t=1us)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
φ 0.5±0.05
4.0±0.1
Limits
80
80
300
100
4
200
150
1.25±0.1
Unit
V
V
mA
mA
A
mW
C
C
-55 to +150
Min.
Typ.
Max.
Unit
-
-
1.2
V
IF=100mA
Conditions
Reverse current
IR
-
-
0.1
μA
VR=70V
Capacitance between terminals
Ct
-
-
3.5
pF
Reverse recovery time
trr
-
-
4
ns
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50Ω
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1/3
2.4±0.1
8.0±0.2
5.5±0.2
0～0.1
2.4±0.1
3.5±0.05
1.75±0.1
4.0±0.1
2011.12 - Rev.A
Data Sheet
DAN202UM
100000
100
Ta=150°C
Ta=125°C
10000
Ta=150°C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
10
Ta=75°C
1
Ta=125°C
0.1
Ta=25°C
0.01
1000
Ta=75°C
100
Ta=25°C
10
1
0.001
0.1
0
100 200 300 400 500 600 700 800 900 1000
0
10
20
30
40
50
10
70
80
940
f=1MHz
Ta=25°C
IF=100mA
n=30pcs
FORWARD VOLTAGE:VF(mV)
930
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
60
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1
920
910
900
890
AVE:899mV
880
870
0.1
860
0
5
10
15
20
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
3
Ta=25°C
VR=80V
n=10pcs
40
30
AVE:14nA
20
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
50
Ta=25°C
VR=6V
f=1MHz
n=10pcs
2
1
AVE:0.7pF
10
0
0
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/3
2011.12 - Rev.A
Data Sheet
DAN202UM
20
10
Ta=25°C
VR=6V
IF=5mA
RL=50Ω
n=10pcs
9
PEAK SURGE
FORWARD CURRENT:IFSM(A)
REVERSE RECOVERY TIME:trr(ns)
1cyc
IFSM
15
8.3ms
10
5
8
7
6
5
4
3
2
1
AVE:1.93ns
AVE:3.50A
0
0
trr DISPERSION MAP
IFSM DISPERSION MAP
5
100
IFSM
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
4
8.3ms
1cyc
3
2
1
t
10
1
0
1
10
1
100
1000
100
10
Mounted on epoxy board
Rth(j-a)
9
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
Rth(j-c)
10
8
7
6
5
4
AVE:2.54kV
3
2
AVE:0.97kV
1
1
0.001
0
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
3/3
2011.12 - Rev.A
Notice
Notes
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R1120A