Data Sheet Switching Diode UMP11N Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) 0.65 0.65 2.0±0.2 各リードとも 0.25± 0.1 Each lead has same dimension 0.05 同寸法 1.6 (2) 0.9 (1) 0.15±0.05 (4) 2.1±0.1 (5) 1.25±0.1 Features 1) Small mold type. (UMD6) 2) High reliability. (6) 0.35 0.65 Construction Silicon epitaxial planar 0.1Min 0～0.1 (3) 0.65 UMD6 0.7 1.3±0.1 0.9±0.1 Structure ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) IFM Forward current (Single) Average retcified forward current Io Isurge Surge current (t=1us) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage φ1.1±0.1 4.0±0.1 2.2±0.1 Limits 2.4±0.1 8.0±0.2 5.5±0.2 0～0.5 2.4±0.1 2.45±0.1 3.5±0.05 1.75±0.1 4.0±0.1 1.15±0.1 Unit V V mA mA A mW °C °C 80 80 300 100 4 150 150 55 to 150 Min. Typ. Max. Unit Conditions IF=100mA - - 1.2 V Reverse current IR - - 0.1 μA VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.B 10000 Ta=125℃ 10 Ta=25℃ Ta=150℃ Ta=-25℃ 1 Ta=150℃ 0 100 200 300 400 500 600 700 800 10 f=1MHz 1000 Ta=75℃ 100 10 Ta=25℃ 1 Ta=-25℃ 0.1 0.01 0.001 0.1 1 0.1 0 900 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 80 0 100 REVERSE CURRENT:IR(nA) 890 880 870 860 AVE:870.1mV 850 Ta=25℃ VR=70V n=10pcs 80 70 50 40 30 AVE:4.310nA 20 8 7 6 5 4 3 2 10 1 0 0 Ct DISPERSION MAP 5 1cyc Ifsm 8.3ms 10 AVE:2.50A 0 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 8 7 6 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 10 5 AVE:2.850pF IR DISPERSION MAP 15 5 4 3 2 1 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP 1000 t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 9 Rth(j-c) 100 Mounted on epoxy board IM=1mA 1ms IF=10mA time 300us 10 0.001 ELECTROSTATIC DDISCHARGE TEST ESD(KV) Ifsm TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 20 Ta=25℃ VR=0V f=1MHz n=10pcs 9 60 VF DISPERSION MAP 20 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 90 Ta=25℃ IF=100mA n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 900 FORWARD VOLTAGE:VF(mV) Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet UMP11N 8 7 6 5 3 0.1 1 10 100 TIME:t(ms) Rth-t CHARACTERISTICS 2/2 AVE:1.47kV 2 1 0 0.01 AVE:2.98kV 4 C=200pF R=0Ω C=100pF R=1.5kΩ 1000 ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A