Data Sheet Switching Diode DAP202K Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) 1.9 ＋0.1 －0.05 0.4 2.9±0.2 各リードとも Each lead has same dimension 同寸法 ＋0.1 0.15 －0.06 (2) 0.3～0.6 0～0.1 (1) 0.95 0.8±0.1 0.95 2.4 0.8MIN. SMD3 1.1±0.2 0.01 1.9±0.2 0.95 1.0MIN. ＋0.2 2.8±0.2 Features 1) Small mold type. (SMD3) 2) High reliability. 1.6－0.1 (3) Construction Silicon epitaxial planar Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 Limits 3.2±0.1 8.0±0.2 0～0.5 3.2±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward voltage (Single) Average rectified forward current (Single) Io Isurge Surge current (t=1us) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage φ1.05MIN 4.0±0.1 3.2±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.35±0.1 Unit V V mA mA A mW °C °C 80 80 300 100 4 200 150 55 to 150 Min. Typ. Max. Unit Conditions IF=100mA - - 1.2 V Reverse current IR - - 0.1 μA VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.A Data Sheet DAP202K Ta=75℃ 100 Ta=150℃ 100000 10 10 Ta=150℃ Ta=25℃ Ta=25℃ 1 f=1MHz 10000 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT : IR(nA) FORWARD CURRENT : I F(mA) Ta=125℃ Ta=75℃ 100 Ta=25℃ 10 Ta=25℃ 1 0.1 0.1 0.1 100 200 300 400 500 600 700 800 900 100 0 0 10 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 50 60 880 870 860 60 50 40 30 20 AVE:17.93nA 0 VF DISPERSION MAP 6 5 4 AVE:1.80pF 3 2 Ct DISPERSION MAP 5 5 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 REVERSE RECOVERY TIME:trr(ns) 1cyc 10 8 7 6 5 4 3 2 1 AVE:2.50A 8.3ms 2 1 0 1 1 100 Rth(j-c) Mounted on epoxy board IF=100mA IM=10mA 10 1ms time 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 0.001 8 7 6 5 3 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 AVE:1.32kV 2 0 0.01 AVE:5.47kV 4 1 300us 1 1 100 9 Rth(j-a) ELECTROSTATIC DDISCHARGE TEST ESD(KV) 10 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) t 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 Ifsm 8.3ms 1cyc 3 trr DISPERSION MAP 100 Ifsm 4 AVE:1.93ns 0 IFSM DISRESION MAP 0.1 7 IR DISPERSION MAP 8.3ms 0 Ta=25℃ VR=6V f=1MHz n=10pcs 8 0 10 Ifsm 20 1 10 15 15 9 70 20 10 10 80 850 5 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) 890 0 70 Ta=25℃ VR=70V n=10pcs 90 REVERSE CURRENT : IR(nA) FORWARD VOLTAGE : V F(mV) 40 100 Ta=25℃ IF=100mA n=30pcs AVE:877.0mV PEAK SURGE FORWARD CURRENT : I FSM(A) 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 900 PEAK SURGE FORWARD CURRENT : I FSM(A) 20 PEAK SURGE FORWARD CURRENT : I FSM(A) 0 1 1000 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A