Data Sheet Switching Diode 1SS400SM lApplications High frequency switching lDimensions (Unit : mm) 0.8±0.05 lLand size figure (Unit : mm) 0.12±0.05 0.6 0.8 1.6±0.1 1.2±0.05 1.7 lFeatures 1)Ultra small mold type. (EMD2) 2)High reliability EMD2 lConstruction Silicon epitaxial 0.3±0.05 lStructure 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) IFM Forward voltage(repetitive peak) Average rectified forward current Io Isurge Surge current(t=1s) Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Limits 90 80 225 100 500 150 Unit V V mA mA mA °C °C -55 to +150 Min. Typ. Max. Unit Conditions - - 1.2 V IF=100mA Reverse current Capacitance between terminals IR - - 0.1 μA VR=80V Ct - - 3 pF Reverse recovery time trr - - 4 ns VR=0.5V , f=1MHz VR=6V , IF=10mA , RL=100Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A Data Sheet 1SS400SM 100 10000 10 Ta=125℃ 10 Ta=75℃ 1 Ta=125℃ Ta=25℃ 0.1 Ta=25℃ 10 Ta=-25℃ 1 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Ta=75℃ 100 Ta=-25℃ 0 0.1 1 0 10 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 910 20 30 40 50 60 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 70 1 0.1 80 0 890 880 870 AVE:879.0mV 15 0.9 Ta=25℃ VR=80V n=30pcs 80 60 AVE:18.8nA 40 20 Ta=25℃ VR=0.5V f=1MHz n=10pcs 0.8 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=100mA n=30pcs 900 5 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1 100 REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) f=1MHz 1000 0.7 0.6 0.5 AVE:0.817pF 0.4 0.3 0.2 0.1 0 860 0 VF DISPERSION MAP 20 100 5 8.3ms 10 AVE:3.62A 5 0 Ta=25℃ VR=6V IF=10mA RL=100Ω Irr=0.1*IR n=10pcs 4 3 2 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 15 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Ct DISPERSION MAP IR DISPERSION MAP AVE:3.06ns 1 Ifsm 8.3ms 8.3ms 10 1cyc 1 0.1 0 1 IFSM DISPERSION MAP 1000 10 1 Ifsm t 0.1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 100 0.20 Rth(j-a) Mounted on epoxy board 100 Rth(j-c) 10 1 0.001 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP D=1/2 0.10 Sin(θ＝180) DC 0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2011.06 - Rev.A Data Sheet 1SS400SM 10 0.2 0.001 9 0.0008 DC 0.0007 0.0006 0.0005 D=1/2 0.0004 0.0003 Sin(θ＝180) 0.0002 0.15 D=1/2 0.1 Sin(θ＝180) Io 0A 0.05 0V t 0.0001 0 0 10 20 30 40 50 60 70 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 80 ELECTROSTATIC DISCHARGE TEST ESD(KV) DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION : PR(W) 0.0009 0 0 25 VR D=t/T VR=40V T Tj=150℃ 50 75 100 7 6 AVE:9kV 5 4 3 AVE:1.8kV 2 1 0 125 AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta) 3/3 8 150 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A