PD - 95162
IRF7101PbF
Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
HEXFET® Power MOSFET
l
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
VDSS = 20V
RDS(on) = 0.10Ω
ID = 3.5A
Top View
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Sodering Temperature, for 10 seconds
3.5
2.3
14
2.0
0.016
± 12
3.0
-55 to + 150
300(1.6mm from case)
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient
Min.
Typ.
Max
62.5
Units
°C/W
10/6/04
IRF7101PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
20
1.0
1.1
Typ.
0.025
7.0
10
24
30
LD
Internal Drain Inductance
4.0
LS
Internal Source Inductance
6.0
Ciss
Coss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
320
250
75
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
g fs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf
Max. Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.10
VGS = 10V, ID = 1.8A
Ω
0.15
VGS = 4.5V, ID = 1.0A
3.0
V
VDS = VGS, ID = 250µA
S
VDS = 15V, ID = 3.5A
2.0
VDS = 20V, VGS = 0V
µA
250
VDS = 16V, V GS = 0V, TJ = 125 °C
100
VGS = 12V
nA
-100
VGS = - 12V
15
ID = 1.8A
2.0
nC VDS = 16V
3.6
VGS = 10V
VDD = 10V
ID = 1.8A
ns
RG = 8.2Ω
RD = 26Ω
D
nH
pF
Between lead,6mm(0.25in.)
from package and center
of die contact
VGS = 0V
VDS = 15V
= 1.0MHz
G
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
2.0
showing the
A
G
integral reverse
14
p-n junction diode.
S
1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V
36
54
ns
TJ = 25°C, IF = 1.7A
41
62
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ 3.5A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature.
TJ ≤ 150°C
S
IRF7101PbF
C,
IRF7101PbF
IRF7101PbF
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
10
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7101PbF
RD
V DS
VDS
90%
VGS
D.U.T.
RG
+
- V DD
10%
VGS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 11a. Switching Time Test Circuit
tr
t d(off)
tf
Fig 11b. Switching Time Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
.2µF
12V
10V
.3µF
D.U.T.
QGS
+
V
- DS
QGD
VG
VGS
3mA
IG
ID
Charge
Current Sampling Resistors
Fig 12a. Gate Charge Test Circuit
Fig 12b. Basic Gate Charge Waveform
IRF7101PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by R G
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
ISD
*
IRF7101PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
6
8
7
6
5
1
2
3
4
H
0.25 [.010]
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
e
e1
8X b
0.25 [.010]
A
MAX
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
MILLIMET ERS
MAX
A
E
INCHES
MIN
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMETER
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
IRF7101PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04