APT75DL60B(G) APT75DL60S(G) 600V 75A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr) • Soft Switching - High Qrr • Popular TO-247 Package or Surface Mount D3PAK Package • Low Noise Switching - Reduced Ringing • Ultra Low Forward Voltage • Higher Reliability Systems • Low Leakage Current • Minimizes or eliminates snubber • Applications - Induction Heating • Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge TO - 24 7 D3PAK 1 2 1 2 (S) 2 1 1 - Cathode 2 - Anode Back of Case - Cathode All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Characteristic / Test Conditions Ratings Unit 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward current (TC = 112°C, Duty Cycle = 0.5) 75 IF(RMS) RMS Forward Currrent (Square wave, 50% duty) 121 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) 320 IFSM TJ, TSTG TL Operating and Storage Junction Temperature Range Amps -55 to 175 °C Lead Temperature for 10 Seconds 300 STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V Min Typ Max IF = 75A 1.25 1.6 IF = 150A 2.0 IF = 75A, TJ = 125°C 1.25 Volts VR = 600V 25 VR = 600V, TJ = 125°C 250 μA 69 Microsemi Website - http://www.microsemi.com Unit pF 052-6317 Rev B 6 - 2009 Symbol APT75DL60B_S(G) DYNAMIC CHARACTERISTICS Symbol Characteristic / Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current trr Min Typ IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C Max Unit 56 ns 460 IF = 75A, diF/dt = -200A/μs VR = 400V, TC = 25°C Reverse Recovery Time IF = 75A, diF/dt = -200A/μs VR = 400V, TC = 125°C 2174 nC 11 Amps 597 ns 4326 nC Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current 15 Amps trr Reverse Recovery Time 355 ns Qrr Reverse Recovery Charge 7215 nC IRRM Maximum Reverse Recovery Current 42 Amps IF = 75A, diF/dt = -1000A/μs VR = 400V, TC = 125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC Junction-to-Case Thermal Resistance WT Min Typ Max Unit 0.40 °C/W 0.22 oz 5.9 g Package Weight Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.40 0.35 0.30 0.25 0.20 Note: 0.15 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.45 t1 t2 0.10 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 052-6317 Rev B 6 - 2009 10 lb·in 1.1 N·m Maximum Mounting Torque APT75DL60B_S(G) TYPICAL PERFORMANCE CURVES 160 800 trr, COLLECTOR CURRENT (A) TJ= 25°C 100 80 60 40 20 0 0 1 2 75A 7000 6000 37.5A 5000 4000 3000 2000 1000 0 0 200 400 600 800 1000 300 200 100 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 50 T = 125°C J V = 400V 45 150A R 40 35 75A 30 25 20 37.5A 15 10 5 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 160 140 1.0 120 IRRM 0.8 tRR QRR 0.6 100 80 60 0.4 40 0.2 0 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 700 CJ, JUNCTION CAPACITANCE (pF) 400 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 37.5A 0 25 50 75 100 125 150 175 Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 600 500 400 300 200 100 0 1 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 052-6317 Rev B 6 - 2009 Qrr, REVERSE RECOVERY CHARGE (nC) 8000 75A 500 3 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 10000 T = 125°C 150A J V = 400V 9000 R R 600 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 700 TJ= 150°C TJ= 55°C 120 T = 125°C J V = 400V 150A TJ= 125°C 140 APT75DL60B_S(G) Vr diF /dt Adjust +18V 0V D.U.T. trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 1 4 6 Zero 5 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 0.25 IRRM 3 Slope = diM/dt 2 Figure 10, Diode Reverse Recovery Waveform and Definitions 3 D PAK Package Outline TO-247 Package Outline e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 15.85 (.624) 16.05(.632) 1.00 (.039) 1.15(.045) Cathode 20.80 (.819) 21.46 (.845) 0.40 (.016) 0.65 (.026) 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 1.15 (.045) 1.45 (.057) 1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.) Anode 2.21 (.087) 2.59 (.102) Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) 13.30 (.524) 13.60(.535) 12.40 (.488) 12.70 (.500) 18.70 (.736) 19.10 (.752) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 052-6317 Rev B 6 - 2009 Cathode (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) e1 100% Sn Anode Cathode Dimensions in Millimeters (Inches) 2.40 (.094) 2.70 (.106) (Base of Lead) Heat Sink (Cathode) and Leads are Plated