600V 15A APT15DQ60B APT15DQ60S APT15DQ60BG* APT15DQ60SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • PFC • Avalanche Energy Rated -2 4 7 D3PAK 1 2 • Cooler Operation • Popular TO-247 Package or Surface Mount D3PAK Package • Higher Reliability Systems • Low Forward Voltage • Low Leakage Current TO 2 1 (S) 2 1 • Increased System Power Density 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT15DQ60B_S(G) UNIT 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 129°C, Duty Cycle = 0.5) 15 RMS Forward Current (Square wave, 50% duty) 30 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG TL Amps 110 20 mJ -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Forward Voltage MIN TYP MAX IF = 15A 2.0 2.4 IF = 30A 2.5 IF = 15A, TJ = 125°C IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V Volts 1.56 VR = 600V 25 VR = 600V, TJ = 125°C Microsemi Website - http://www.microsemi.com UNIT 500 25 µA pF 7-2006 VF Characteristic / Test Conditions 053-4200 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol APT15DQ60B_S(G) Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Reverse Recovery Time Qrr Reverse Recovery Charge IF = 15A, diF/dt = -200A/µs Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 15A, diF/dt = -200A/µs VR = 400V, TC = 125°C IF = 15A, diF/dt = -1000A/µs Maximum Reverse Recovery Current VR = 400V, TC = 125°C MIN TYP MAX UNIT - 15 - 19 - 21 - 2 - 105 ns - 250 nC - 5 - 55 ns - 420 nC - 15 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC WT Torque Characteristic / Test Conditions MAX UNIT 1.35 °C/W Junction-to-Case Thermal Resistance Package Weight 0.22 oz 5.9 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 1.20 1.00 0.7 0.80 0.5 Note: 0.3 0.40 t 0.1 0.05 10 -5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 7-2006 TJ (°C) 053-4200 Rev D t1 t2 0.20 0 PDM 0.60 TC (°C) 0.583 0.767 Dissipated Power (Watts) 0.00222 ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 1.40 0.0598 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 140 50 120 trr, REVERSE RECOVERY TIME (ns) 60 TJ = 175°C 40 TJ = 125°C 30 20 10 0 TJ = 25°C TJ = -55°C 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 700 R 30A 500 400 15A 300 7.5A 200 100 0 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change R 30A 100 15A 80 7.5A 60 40 20 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change R 20 30A 15 10 15A 7.5A 5 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 35 Qrr trr 1.0 T =125°C J V =400V 0 Duty cycle = 0.5 T =175°C J 30 25 0.8 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.2 IRRM 0.6 trr 0.4 Qrr 0.2 0.0 T =125°C J V =400V 25 T =125°C J V =400V 600 APT15DQ60B_S(G) 0 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) TYPICAL PERFORMANCE CURVES 20 15 10 5 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 80 70 60 50 7-2006 40 30 20 10 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4200 Rev D CJ, JUNCTION CAPACITANCE (pF) 90 APT15DQ60B_S(G) Vr diF /dt Adjust +18V APT6017LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions 3 D PAK Package Outline TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 20.80 (.819) 21.46 (.845) Cathode 7-2006 053-4200 Rev D e3 100% Sn Cathode (Heat Sink) e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 0.40 (.016) 0.65 (.026) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 1.00 (.039) 1.15(.045) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 1.15 (.045) 1.45 (.057) 1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.) Anode 2.21 (.087) 2.59 (.102) Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) 13.30 (.524) 13.60(.535) 12.40 (.488) 12.70 (.500) 18.70 (.736) 19.10 (.752) 3.50 (.138) 3.81 (.150) 0.40 (.016) 0.79 (.031) 15.85 (.624) 16.05(.632) Anode Cathode Dimensions in Millimeters (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.40 (.094) 2.70 (.106) (Base of Lead) Heat Sink (Cathode) and Leads are Plated