APTCV60TLM70T3G Three level inverter CoolMOS & Trench + Field Stop IGBT3 Power Module Trench & Field Stop IGBT3 Q2, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS™ Q1, Q4: VDSS = 600V ; ID = 29A @ Tc = 80°C Application Solar converter Uninterruptible Power Supplies Features Q2, Q3 Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 13 32 2 3 4 7 8 10 11 12 Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1 - 12 APTCV60TLM70T3G – Rev 2 October, 2012 All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … Q1, Q4 CoolMOS™ Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged APTCV60TLM70T3G Q1 & Q4 Absolute maximum ratings (per CoolMOS™) Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 39 29 160 ±20 70 250 20 1 1800 Unit V A V m W A mJ Q1 & Q4 Electrical Characteristics (per CoolMOS™) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 7 2.56 0.21 Max 25 250 70 3.9 ±100 Unit Max Unit µA m V nA Q1 & Q4 Dynamic Characteristics (per CoolMOS™) Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 39A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 39A RG = 5 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 39A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 39A, RG = 5Ω nF 259 nC 29 111 21 30 ns 283 84 670 µJ 980 1096 µJ 1206 0.5 www.microsemi.com October, 2012 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance °C/W 2 - 12 APTCV60TLM70T3G – Rev 2 Symbol Ciss Coss Crss APTCV60TLM70T3G Q2 & Q3 Absolute maximum ratings (per IGBT) Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V A V W Q2 & Q3 Electrical Characteristics (per IGBT) Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Q2 & Q3 Dynamic Characteristics (per IGBT) Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=50A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 50A Tj = 25°C RG = 8.2 Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Junction to Case Thermal Resistance 3150 200 95 pF 0.5 µC 110 45 200 40 ns 120 50 250 ns 60 0.3 0.43 1.35 1.75 mJ mJ 250 A 0.85 www.microsemi.com °C/W 3 - 12 October, 2012 Cies Coes Cres Test Conditions APTCV60TLM70T3G – Rev 2 Symbol Characteristic APTCV60TLM70T3G CR2 & CR3 diode ratings and characteristics (per device) Symbol Characteristic VF RthJC Test Conditions Diode + tranzorb Forward Voltage Min IF = 10A Typ Max 10 Junction to Case Thermal Resistance Unit V 8 °C/W Max Unit V µA CR5 & CR6 diode ratings and characteristics (per diode) Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF VF Test Conditions Min 600 VR=600V DC Forward Current 25 Tc = 80°C IF = 30A IF = 60A IF = 30A Diode Forward Voltage Typ trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 30A VR = 400V IF = 30A VR = 400V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 30 1.8 2.2 1.5 25 160 35 Tj = 125°C 480 Tj = 125°C 0.6 A 2.2 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 °C/W Max Unit V µA A CR7 & CR8 diode ratings and characteristics (per diode) Symbol VRRM IRM IF VF Characteristic Test Conditions Min 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current DC Forward Current VR=1200V 100 Tc = 80°C IF = 30A IF = 60A IF = 30A Diode Forward Voltage Typ trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 30A VR = 800V IF = 30A VR = 800V Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 30 2.6 3.2 1.8 300 380 360 Tj = 125°C 1700 Tj = 125°C 1.6 3.1 V ns nC mJ di/dt =1000A/µs Junction to Case Thermal Resistance 1.2 °C/W Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT R25 Typ 50 5 3952 4 Max October, 2012 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T www.microsemi.com 4 - 12 APTCV60TLM70T3G – Rev 2 RthJC APTCV60TLM70T3G Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 4000 -40 -40 -40 2 Typ Max 175* 125 100 3 110 Unit V °C N.m g *Tjmax = 150°C for Q1 & Q4 SP3 Package outline (dimensions in mm) See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Q2 & Q3 Typical performance curve 80 October, 2012 VCE=300V D=50% R G=8.2Ω T J=150°C 60 T c =85°C 40 Hard switching 20 0 0 20 40 60 80 IC (A) www.microsemi.com 5 - 12 APTCV60TLM70T3G – Rev 2 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current APTCV60TLM70T3G Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ=25°C TJ = 150°C TJ=125°C VGE=13V TJ=150°C 60 60 VGE=15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 3.5 2.5 60 E (mJ) IC (A) 1 1.5 2 VCE (V) 2.5 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 3 TJ=25°C 80 0.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE=19V 80 IC (A) IC (A) 80 40 Eoff 2 1.5 1 TJ=150°C 20 TJ=25°C 0 0 5 6 7 Eon 0.5 8 9 10 11 0 12 20 40 Switching Energy Losses vs Gate Resistance 80 100 Reverse Bias Safe Operating Area 3 125 2.5 Eoff 100 IC (A) 2 E (mJ) 60 IC (A) VGE (V) 1.5 50 VCE = 300V VGE =15V IC = 50A TJ = 150°C 1 Eon 0.5 75 VGE=15V TJ=150°C RG=8.2Ω 25 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.6 0.9 0.7 0.2 October, 2012 0.5 0.4 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 6 - 12 APTCV60TLM70T3G – Rev 2 Thermal Impedance (°C/W) 1 APTCV60TLM70T3G Q1 & Q4 Typical performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 160 VGS=15&10V ID, Drain Current (A) 6.5V 6V 120 5.5V 80 5V 40 4.5V 4V 0 100 80 60 40 TJ=125°C 20 TJ=25°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 19.5A 1.05 VGS=10V VGS=20V 1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 40 RDS(on) vs Drain Current 1.1 ID, DC Drain Current (A) 0.95 0.9 35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 October, 2012 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 7 - 12 APTCV60TLM70T3G – Rev 2 ID, Drain Current (A) 200 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) 0.9 0.8 0.7 limited by RDSon 100 100 µs 10 0.6 Single pulse TJ=150°C TC=25°C 1 ms 10 ms 1 25 50 75 100 125 150 1 Ciss Coss 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 14 ID=39A TJ=25°C 12 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 October, 2012 VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 C, Capacitance (pF) VGS=10V ID= 39A 2.5 8 - 12 APTCV60TLM70T3G – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTCV60TLM70T3G APTCV60TLM70T3G Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=5Ω TJ=125°C L=100µH 200 150 100 50 VDS=400V RG=5Ω TJ=125°C L=100µH 100 80 tr and tf (ns) 60 40 tr 20 td(on) 0 0 0 10 20 30 40 50 60 70 0 10 20 ID, Drain Current (A) Switching Energy (mJ) 60 70 Eoff Eon 1 Eoff VDS=400V ID=39A TJ=125°C L=100µH 4 3 Eoff Eon 2 1 0 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70 0 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 140 120 100 hard switching 80 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 60 40 20 0 5 10 15 20 25 30 ID, Drain Current (A) 5 10 15 20 25 30 35 40 45 50 35 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) www.microsemi.com October, 2012 Switching Energy (mJ) 50 Switching Energy vs Gate Resistance 1.5 0.5 40 5 VDS=400V RG=5Ω TJ=125°C L=100µH 2 30 ID, Drain Current (A) Switching Energy vs Current 2.5 Frequency (kHz) tf 9 - 12 APTCV60TLM70T3G – Rev 2 td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTCV60TLM70T3G CR5 & CR6 Typical performance curve Forward Characteristic of diode 80 IF (A) 60 TJ=125°C 40 TJ=25°C 20 0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 2.4 Switching Energy Losses vs Gate Resistance 1 0.75 0.75 0.5 E (mJ) E (mJ) Energy losses vs Collector Current 1 VCE = 400V VGE = 15V RG = 2.5Ω TJ = 125°C 0.25 20 40 60 VCE = 400V VGE =15V IC = 30A TJ = 125°C 0.25 0 0 0.5 0 80 0 2 4 6 8 Gate Resistance (ohms) IC (A) 10 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com October, 2012 1.2 10 - 12 APTCV60TLM70T3G – Rev 2 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 APTCV60TLM70T3G CR7 & CR8 Typical performance curve Forward Current vs Forward Voltage IF, Forward Current (A) 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Switching Energy Losses vs Gate Resistance 1.8 2 1.6 1.4 1.5 E (mJ) E (mJ) Energy losses vs Collector Current 2.5 VCE = 800V VGE = 15V RG = 5Ω TJ = 125°C 1 0.5 20 40 60 VCE = 800V VGE =15V IC = 30A TJ = 125°C 1 0.8 0 0 1.2 0.6 80 0 10 IC (A) 20 30 Gate resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 October, 2012 0.4 Rectangular Pulse Duration (Seconds) www.microsemi.com 11 - 12 APTCV60TLM70T3G – Rev 2 Thermal Impedance (°C/W) 1.4 APTCV60TLM70T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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