APTCV60TLM45T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS™ Q1, Q4: VDSS = 600V ; ID = 38A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies Features • Q2, Q3 Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • - 28 27 26 25 • • • • 20 19 18 23 22 29 16 30 15 14 31 32 13 2 3 4 7 8 10 11 12 Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1 - 11 APTCV60TLM45T3G – Rev 0 March, 2009 All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … Q1, Q4 CoolMOS™ Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged APTCV60TLM45T3G Q1 & Q4 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 49 38 130 ±20 45 250 15 3 1900 Unit V A V mΩ W A mJ Q1 & Q4 Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 2.1 40 3 Max 250 500 45 3.9 100 Unit Max Unit µA mΩ V nA Q1 & Q4 Dynamic Characteristics Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance VGS = 10V VBus = 300V ID = 49A Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 49A RG = 5Ω Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5Ω Min Typ 7.2 8.5 nF 150 nC 34 51 21 30 ns 100 45 675 µJ 520 1100 µJ 635 0.5 www.microsemi.com March, 2009 Qg Test Conditions VGS = 0V ; VDS = 25V f = 1MHz °C/W 2 - 11 APTCV60TLM45T3G – Rev 0 Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance APTCV60TLM45T3G Q2 & Q3 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 100 75 140 ±20 250 150A @ 550V Unit V A V W Q2 & Q3 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 75A Tj = 150°C VGE = VCE, IC = 600µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Q2 & Q3 Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Rise Time Turn-off Delay Time Fall Time Td(off) Tf Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=75A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 75A RG = 4.7Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 75A Tj = 25°C RG = 4.7Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Junction to Case Thermal Resistance 4620 300 140 pF 0.8 µC 110 45 200 40 ns 120 50 250 60 0.35 0.6 2.2 2.6 ns mJ mJ 380 A 0.60 www.microsemi.com °C/W 3 - 11 March, 2009 Cies Coes Cres Test Conditions APTCV60TLM45T3G – Rev 0 Symbol Characteristic APTCV60TLM45T3G CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage Test Conditions VR=600V IF = 30A IF = 60A IF = 30A trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 30A VR = 400V IF = 30A VR = 400V Min 600 Tj = 25°C Tj = 125°C Tc = 80°C Typ Max 25 500 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 30 1.8 2.2 1.5 25 160 35 Tj = 125°C 480 Tj = 125°C 0.6 Unit V µA A 2.2 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 °C/W Max Unit V CR2, CR3, CR7 & CR8 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current Test Conditions VR=1200V DC Forward Current IF = 30A IF = 60A IF = 30A Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge di/dt =200A/µs Err Reverse Recovery Energy IF = 30A VR = 800V IF = 30A VR = 800V Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 30 2.6 3.2 1.8 300 380 360 Tj = 125°C 1700 Tj = 125°C 1.6 µA A 3.1 V ns nC mJ di/dt =1000A/µs RthJC Junction to Case Thermal Resistance 1.2 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % March, 2009 Characteristic Resistance @ 25°C T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ www.microsemi.com 4 - 11 APTCV60TLM45T3G – Rev 0 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTCV60TLM45T3G Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Min 2500 -40 -40 -40 2.5 Typ Max 175* 125 100 4.7 110 Unit V °C N.m g * Tjmax = 150°C for Q1 & Q4 SP3 Package outline (dimensions in mm) 28 17 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com 60 VCE=300V D=50% R G=4.7Ω T J=150°C 45 T c =85°C 30 March, 2009 Operating Frequency vs Collector Current 75 Hard switching 15 0 0 20 40 60 80 100 IC (A) www.microsemi.com 5 - 11 APTCV60TLM45T3G – Rev 0 Fmax, Operating Frequency (kHz) Q2 & Q3 Typical performance curve APTCV60TLM45T3G Output Characteristics (VGE=15V) Output Characteristics 150 150 TJ=25°C TJ = 150°C VGE=13V 100 TJ=150°C IC (A) IC (A) 100 75 VGE=15V 75 50 50 25 25 VGE=9V TJ=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 5 TJ=25°C 125 1 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 4.7Ω TJ = 150°C 4 E (mJ) 100 75 TJ=150°C 50 0.5 2.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 150 IC (A) VGE=19V 125 125 3 Eoff 2 Eon 1 25 TJ=25°C 0 0 5 6 7 8 9 10 11 0 12 25 50 75 100 125 150 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 5 175 Eoff 150 125 Eon 3 IC (A) E (mJ) 4 2 VCE = 300V VGE =15V IC = 75A TJ = 150°C 1 100 75 50 VGE=15V TJ=150°C RG=4.7Ω 25 0 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 35 40 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 March, 2009 0.6 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 6 - 11 APTCV60TLM45T3G – Rev 0 Thermal Impedance (°C/W) 0.7 APTCV60TLM45T3G Q1 & Q4 Typical performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 360 VGS=15&10V 6.5V 280 ID, Drain Current (A) 6V 240 200 5.5V 160 120 5V 80 4.5V 40 4V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 100 80 60 40 TJ=125°C 20 TJ=25°C 0 0 5 10 15 20 25 0 Normalized to VGS=10V @ 50A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 50 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) 0.9 40 30 20 10 0 0 20 40 60 80 100 120 140 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) March, 2009 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 150 7 - 11 APTCV60TLM45T3G – Rev 0 ID, Drain Current (A) 320 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 0.9 0.8 0.7 limited by RDSon 100 100 µs 1 ms Single pulse TJ=150°C TC=25°C 10 0.6 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 1000 Crss 100 10 1000 10 20 30 40 50 VDS, Drain to Source Voltage (V) 12 ID=50A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) March, 2009 0 100 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V ID= 50A 2.5 www.microsemi.com 8 - 11 APTCV60TLM45T3G – Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTCV60TLM45T3G APTCV60TLM45T3G Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=5Ω TJ=125°C L=100µH 60 tr and tf (ns) td(on) 20 50 tf 40 30 tr 20 10 0 0 0 10 20 30 40 50 60 70 80 0 10 20 ID, Drain Current (A) 1.6 Switching Energy (mJ) Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH Eon 1.2 Eoff 0.8 0.4 VDS=400V ID=50A TJ=125°C L=100µH 2 1.5 50 60 70 80 Eoff Eon 1 0.5 0 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 IDR, Reverse Drain Current (A) 300 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 250 200 150 hard switching 100 50 15 20 25 30 35 ID, Drain Current (A) 30 40 50 40 45 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) March, 2009 10 20 Source to Drain Diode Forward Voltage 1000 0 5 10 Gate Resistance (Ohms) Operating Frequency vs Drain Current Frequency (kHz) 40 Switching Energy vs Gate Resistance 2.5 Switching Energy vs Current 2 30 ID, Drain Current (A) www.microsemi.com 9 - 11 APTCV60TLM45T3G – Rev 0 td(on) and td(off) (ns) 120 APTCV60TLM45T3G CR5 & CR6 Typical performance curve Forward Characteristic of diode 80 IF (A) 60 TJ=125°C 40 TJ=25°C 20 0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 2.4 Switching Energy Losses vs Gate Resistance 1 0.75 0.75 0.5 E (mJ) E (mJ) Energy losses vs Collector Current 1 VCE = 400V VGE = 15V RG = 2.5Ω TJ = 125°C 0.25 20 40 60 VCE = 400V VGE =15V IC = 30A TJ = 125°C 0.25 0 0 0.5 0 80 0 2 4 6 8 Gate Resistance (ohms) IC (A) 10 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com March, 2009 1.2 10 - 11 APTCV60TLM45T3G – Rev 0 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 APTCV60TLM45T3G CR2, CR3, CR7 & CR8 Typical performance curve Forward Current vs Forward Voltage IF, Forward Current (A) 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Switching Energy Losses vs Gate Resistance 2.5 1.8 2 1.6 1.4 1.5 E (mJ) E (mJ) Energy losses vs Collector Current VCE = 800V VGE = 15V RG = 5Ω TJ = 125°C 1 0.5 20 40 60 VCE = 800V VGE =15V IC = 30A TJ = 125°C 1 0.8 0 0 1.2 0.6 80 0 10 IC (A) 20 30 Gate resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.6 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 March, 2009 0.4 Rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 11 - 11 APTCV60TLM45T3G – Rev 0 Thermal Impedance (°C/W) 1.4