74AUP1T57 Low-power configurable gate with voltage-level translator Rev. 5 — 15 August 2012 Product data sheet 1. General description The 74AUP1T57 provides low-power, low-voltage configurable logic gate functions. The output state is determined by eight patterns of 3-bit input. The user can choose the logic functions AND, OR, NAND, NOR, XNOR, inverter and buffer. All inputs can be connected to VCC or GND. This device ensures a very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. The 74AUP1T57 is designed for logic-level translation applications with input switching levels that accept 1.8 V low-voltage CMOS signals, while operating from either a single 2.5 V or 3.3 V supply voltage. The wide supply voltage range ensures normal operation as battery voltage drops from 3.6 V to 2.3 V. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. Schmitt trigger inputs make the circuit tolerant to slower input rise and fall times across the entire VCC range. 2. Features and benefits Wide supply voltage range from 2.3 V to 3.6 V High noise immunity ESD protection: HBM JESD22-A114F Class 3A exceeds 5000 V MM JESD22-A115-A exceeds 200 V CDM JESD22-C101E exceeds 1000 V Low static power consumption; ICC = 1.5 A (maximum) Latch-up performance exceeds 100 mA per JESD 78 Class II Inputs accept voltages up to 3.6 V Low noise overshoot and undershoot < 10 % of VCC IOFF circuitry provides partial power-down mode operation Multiple package options Specified from 40 C to +85 C and 40 C to +125 C 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version 74AUP1T57GW 40 C to +125 C SC-88 plastic surface-mounted package; 6 leads SOT363 74AUP1T57GM 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads; SOT886 6 terminals; body 1 1.45 0.5 mm 74AUP1T57GF 40 C to +125 C XSON6 plastic extremely thin small outline package; no leads; SOT891 6 terminals; body 1 1 0.5 mm 74AUP1T57GN 40 C to +125 C XSON6 extremely thin small outline package; no leads; 6 terminals; body 0.9 1.0 0.35 mm SOT1115 74AUP1T57GS 40 C to +125 C XSON6 extremely thin small outline package; no leads; 6 terminals; body 1.0 1.0 0.35 mm SOT1202 4. Marking Table 2. Marking Type number Marking code[1] 74AUP1T57GW a7 74AUP1T57GM a7 74AUP1T57GF a7 74AUP1T57GN a7 74AUP1T57GN a7 [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram A 3 4 B C Fig 1. 1 Y 6 001aab583 Logic symbol 74AUP1T57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 2 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator 6. Pinning information 6.1 Pinning 74AUP1T57 74AUP1T57 B 1 6 B 1 6 C GND 2 5 VCC C GND 2 5 VCC A 3 4 Y A 3 4 Y B 1 6 C GND 2 5 VCC A 3 4 Y 001aah471 001aah473 Transparent top view Transparent top view 001aah472 Fig 2. 74AUP1T57 Pin configuration SOT363 Fig 3. Pin configuration SOT886 Fig 4. Pin configuration SOT891, SOT1115 and SOT1202 6.2 Pin description Table 3. Pin description Symbol Pin Description B 1 data input GND 2 ground (0 V) A 3 data input Y 4 data output VCC 5 supply voltage C 6 data input 7. Functional description Table 4. Function table[1] Input Output C B A Y L L L H L L H L L H L H L H H L H L L L H L H L H H L H H H H H [1] H = HIGH voltage level; L = LOW voltage level. 74AUP1T57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 3 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator 7.1 Logic configurations Table 5. Function selection table Logic function Figure 2-input AND see Figure 5 2-input AND with both inputs inverted see Figure 8 2-input NAND with inverted input see Figure 6 and 7 2-input OR with inverted input see Figure 6 and 7 2-input NOR see Figure 8 2-input NOR with both inputs inverted see Figure 5 2-input XNOR see Figure 9 Inverter see Figure 10 Buffer see Figure 11 VCC B C B C Y B Y 1 6 2 5 3 4 VCC B C C Y B C Y B Y 1 6 2 5 3 4 Y 001aab585 001aab584 Fig 5. C 2-input AND gate or 2-input NOR gate with both inputs inverted Fig 6. 2-input NAND gate with input B inverted or 2-input OR gate with inverted C input VCC VCC A C A C Y A Y 1 6 2 5 3 4 A C C Y A C Y Y A 1 6 2 5 3 4 001aab586 Fig 7. C Y 001aab587 2-input NAND gate with input C inverted or 2-input OR gate with inverted A input Fig 8. 2-input NOR gate or 2-input AND gate with both inputs inverted VCC VCC B B C Y 1 6 2 5 3 4 C A Y A 2-input XNOR gate 74AUP1T57 Product data sheet 1 6 2 5 3 4 Y 001aab589 001aab588 Fig 9. Y Fig 10. Inverter All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 4 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator VCC B B Y 1 6 2 5 3 4 Y 001aab590 Fig 11. Buffer 8. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage IIK input clamping current VI input voltage IOK output clamping current Conditions Min VI < 0 V [1] VO < 0 V [1] Max Unit 0.5 +4.6 V 50 - mA 0.5 +4.6 V 50 - mA 0.5 +4.6 V - 20 mA VO output voltage Active mode and Power-down mode IO output current VO = 0 V to VCC ICC supply current - 50 mA IGND ground current 50 - mA Tstg storage temperature 65 +150 C Ptot total power dissipation - 250 mW [1] [2] Tamb = 40 C to +125 C [2] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. For SC-88 package: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K. 9. Recommended operating conditions Table 7. Recommended operating conditions Symbol Parameter VCC VI VO output voltage Tamb Conditions Min Max Unit supply voltage 2.3 3.6 V input voltage 0 3.6 V Active mode 0 VCC V Power-down mode; VCC = 0 V 0 3.6 V 40 +125 C ambient temperature 74AUP1T57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 5 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator 10. Static characteristics Table 8. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit Tamb = 25 C VT+ VT VH VOH VOL positive-going threshold voltage negative-going threshold voltage hysteresis voltage HIGH-level output voltage LOW-level output voltage VCC = 2.3 V to 2.7 V 0.60 - 1.10 V VCC = 3.0 V to 3.6 V 0.75 - 1.16 V VCC = 2.3 V to 2.7 V 0.35 - 0.60 V VCC = 3.0 V to 3.6 V 0.50 - 0.85 V VCC = 2.3 V to 2.7 V 0.23 - 0.60 V VCC = 3.0 V to 3.6 V 0.25 - 0.56 V (VH = VT+ VT) VI = VT+ or VT IO = 20 A; VCC = 2.3 V to 3.6 V VCC 0.1 - - V IO = 2.3 mA; VCC = 2.3 V 2.05 - - V IO = 3.1 mA; VCC = 2.3 V 1.9 - - V IO = 2.7 mA; VCC = 3.0 V 2.72 - - V IO = 4.0 mA; VCC = 3.0 V 2.6 - - V IO = 20 A; VCC = 2.3 V to 3.6 V - - 0.10 V IO = 2.3 mA; VCC = 2.3 V - - 0.31 V IO = 3.1 mA; VCC = 2.3 V - - 0.44 V IO = 2.7 mA; VCC = 3.0 V - - 0.31 V IO = 4.0 mA; VCC = 3.0 V - - 0.44 V - - 0.1 A VI = VT+ or VT II input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - 0.1 A IOFF additional power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V - - 0.2 A ICC supply current VI = GND or VCC; IO = 0 A; VCC = 2.3 V to 3.6 V - - 1.2 A ICC additional supply current VCC = 2.3 V to 2.7 V; IO = 0 A [1] - - - A VCC = 3.0 V to 3.6 V; IO = 0 A [2] - - - A CI input capacitance VCC = 0 V to 3.6 V; VI = GND or VCC - 0.8 - pF CO output capacitance VO = GND; VCC = 0 V - 1.7 - pF VCC = 2.3 V to 2.7 V 0.60 - 1.10 V VCC = 3.0 V to 3.6 V 0.75 - 1.19 V VCC = 2.3 V to 2.7 V 0.35 - 0.60 V VCC = 3.0 V to 3.6 V 0.50 - 0.85 V VCC = 2.3 V to 2.7 V 0.10 - 0.60 V VCC = 3.0 V to 3.6 V 0.15 - 0.56 V Tamb = 40 C to +85 C VT+ VT VH positive-going threshold voltage negative-going threshold voltage hysteresis voltage 74AUP1T57 Product data sheet (VH = VT+ VT) All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 6 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator Table 8. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions VOH VI = VT+ or VT VOL HIGH-level output voltage LOW-level output voltage Min Typ Max Unit IO = 20 A; VCC = 2.3 V to 3.6 V VCC 0.1 - - V IO = 2.3 mA; VCC = 2.3 V 1.97 - - V IO = 3.1 mA; VCC = 2.3 V 1.85 - - V IO = 2.7 mA; VCC = 3.0 V 2.67 - - V IO = 4.0 mA; VCC = 3.0 V 2.55 - - V IO = 20 A; VCC = 2.3 V to 3.6 V - - 0.1 V IO = 2.3 mA; VCC = 2.3 V - - 0.33 V IO = 3.1 mA; VCC = 2.3 V - - 0.45 V IO = 2.7 mA; VCC = 3.0 V - - 0.33 V IO = 4.0 mA; VCC = 3.0 V - - 0.45 V VI = VT+ or VT II input leakage current VI = GND to 3.6 V; VCC = 0 V to 3.6 V - - 0.5 A IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - 0.5 A IOFF additional power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V - - 0.5 A ICC supply current VI = GND or VCC; IO = 0 A; VCC = 2.3 V to 3.6 V - - 1.5 A ICC additional supply current VCC = 2.3 V to 2.7 V; IO = 0 A [1] - - 4 A VCC = 3.0 V to 3.6 V; IO = 0 A [2] - - 12 A VCC = 2.3 V to 2.7 V 0.60 - 1.10 V VCC = 3.0 V to 3.6 V 0.75 - 1.19 V VCC = 2.3 V to 2.7 V 0.33 - 0.64 V VCC = 3.0 V to 3.6 V 0.46 - 0.85 V VCC = 2.3 V to 2.7 V 0.10 - 0.60 V VCC = 3.0 V to 3.6 V 0.15 - 0.56 V Tamb = 40 C to +125 C VT+ positive-going threshold voltage VT negative-going threshold voltage VH VOH VOL II hysteresis voltage HIGH-level output voltage LOW-level output voltage input leakage current 74AUP1T57 Product data sheet (VH = VT+ VT) VI = VT+ or VT IO = 20 A; VCC = 2.3 V to 3.6 V VCC 0.11 - - V IO = 2.3 mA; VCC = 2.3 V 1.77 - - V IO = 3.1 mA; VCC = 2.3 V 1.67 - - V IO = 2.7 mA; VCC = 3.0 V 2.40 - - V IO = 4.0 mA; VCC = 3.0 V 2.30 - - V IO = 20 A; VCC = 2.3 V to 3.6 V - - 0.11 V IO = 2.3 mA; VCC = 2.3 V - - 0.36 V IO = 3.1 mA; VCC = 2.3 V - - 0.50 V IO = 2.7 mA; VCC = 3.0 V - - 0.36 V IO = 4.0 mA; VCC = 3.0 V - - 0.50 V - - 0.75 A VI = VT+ or VT VI = GND to 3.6 V; VCC = 0 V to 3.6 V All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 7 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator Table 8. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit IOFF power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V - - 0.75 A IOFF additional power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V to 0.2 V - - 0.75 A ICC supply current VI = GND or VCC; IO = 0 A; VCC = 2.3 V to 3.6 V - - 3.5 A ICC additional supply current VCC = 2.3 V to 2.7 V; IO = 0 A [1] - - 7 A VCC = 3.0 V to 3.6 V; IO = 0 A [2] - - 22 A [1] One input at 0.3 V or 1.1 V, other input at VCC or GND. [2] One input at 0.45 V or 1.2 V, other input at VCC or GND. 11. Dynamic characteristics Table 9. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 13. Symbol Parameter 25 C Conditions Min 40 C to +125 C Typ[1] Max Min Max (85 C) Max (125 C) Unit VCC = 2.3 V to 2.7 V; VI = 1.65 V to 1.95 V tpd propagation delay A, B, C to Y; see Figure 12 [2] CL = 5 pF 2.1 3.6 5.5 0.5 6.8 7.5 ns CL = 10 pF 2.6 4.1 6.2 1.0 7.9 8.7 ns CL = 15 pF 2.9 4.6 6.8 1.0 8.7 9.6 ns CL = 30 pF 3.8 5.8 8.2 1.5 10.8 11.9 ns CL = 5 pF 1.7 3.4 5.4 0.5 6.0 6.6 ns CL = 10 pF 2.1 4.0 6.2 1.0 7.1 7.9 ns CL = 15 pF 2.5 4.5 6.7 1.0 7.9 8.7 ns CL = 30 pF 3.3 5.6 8.2 1.5 10.0 11.0 ns VCC = 2.3 V to 2.7 V; VI = 2.3 V to 2.7 V tpd propagation delay A, B, C to Y; see Figure 12 [2] VCC = 2.3 V to 2.7 V; VI = 3.0 V to 3.6 V tpd propagation delay A, B, C to Y; see Figure 12 [2] CL = 5 pF 1.4 3.2 4.9 0.5 5.5 6.1 ns CL = 10 pF 1.8 3.7 5.7 1.0 6.5 7.2 ns CL = 15 pF 2.2 4.2 6.3 1.0 7.4 8.2 ns CL = 30 pF 3.0 5.4 7.8 1.5 9.5 10.5 ns CL = 5 pF 2.0 2.9 3.9 0.5 8.0 8.8 ns CL = 10 pF 2.5 3.5 4.6 1.0 8.5 9.4 ns CL = 15 pF 2.8 3.9 5.2 1.0 9.1 10.1 ns CL = 30 pF 3.6 5.1 6.6 1.5 9.8 10.8 ns VCC = 3.0 V to 3.6 V; VI = 1.65 V to 1.95 V tpd propagation delay A, B, C to Y; see Figure 12 74AUP1T57 Product data sheet [2] All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 8 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator Table 9. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 13. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ[1] Max Min Max (85 C) Max (125 C) CL = 5 pF 1.6 2.8 4.2 0.5 5.3 5.9 ns CL = 10 pF 2.0 3.4 4.9 1.0 6.1 6.8 ns CL = 15 pF 2.3 3.9 5.5 1.0 6.8 7.5 ns CL = 30 pF 3.1 5.0 6.9 1.5 8.5 9.4 ns VCC = 3.0 V to 3.6 V; VI = 2.3 V to 2.7 V propagation delay A, B, C to Y; see Figure 12 tpd [2] VCC = 3.0 V to 3.6 V; VI = 3.0 V to 3.6 V propagation delay A, B, C to Y; see Figure 12 tpd [2] CL = 5 pF 1.3 2.8 4.2 0.5 4.7 5.2 ns CL = 10 pF 1.7 3.3 4.9 1.0 5.7 6.3 ns CL = 15 pF 2.0 3.8 5.5 1.0 6.2 6.9 ns CL = 30 pF 2.8 4.9 7.0 1.5 7.8 8.6 ns VCC = 2.3 V to 2.7 V - 3.6 - - - - pF VCC = 3.0 V to 3.6 V - 4.3 - - - - pF Tamb = 25 C power dissipation capacitance CPD fi = 1 MHz; VI = GND to VCC [1] All typical values are measured at nominal VCC. [2] tpd is the same as tPLH and tPHL [3] [3] CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD VCC2 fi N + (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL VCC2 fo) = sum of the outputs. 74AUP1T57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 9 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator 12. Waveforms VI A, B, C input VM VM GND t PHL t PLH VOH VM Y output VM VOL t PLH t PHL VOH Y output VM VM VOL 001aab593 Measurement points are given in Table 10. VOL and VOH are typical output voltage drop that occur with the output load. Fig 12. Input A, B and C to output Y propagation delay times Table 10. Measurement points Supply voltage Output Input VCC VM VM VI tr = tf 2.3 V to 3.6 V 0.5 VCC 0.5 VI 1.65 V to 3.6 V 3.0 ns 74AUP1T57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 10 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator VCC VEXT 5 kΩ G VI VO DUT CL RT RL 001aac521 Test data is given in Table 11. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 13. Test circuit for measuring switching times Table 11. Test data Supply voltage Load VEXT [1] VCC CL RL 2.3 V to 3.6 V 5 pF, 10 pF, 15 pF and 30 pF 5 k or 1 M [1] tPLH, tPHL tPZH, tPHZ tPZL, tPLZ open GND 2 VCC For measuring enable and disable times RL = 5 k, for measuring propagation delays, setup and hold times and pulse width RL = 1 M. 74AUP1T57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 11 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator 13. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT363 JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 14. Package outline SOT363 (SC-88) 74AUP1T57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 12 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator SOT886 XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm b 1 2 3 4x (2) L L1 e 6 5 e1 4 e1 6x A (2) A1 D E terminal 1 index area 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A(1) 0.5 A1 b D E 0.04 0.25 1.50 1.05 0.20 1.45 1.00 0.17 1.40 0.95 e e1 0.6 0.5 L L1 0.35 0.40 0.30 0.35 0.27 0.32 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. Outline version SOT886 sot886_po References IEC JEDEC JEITA European projection Issue date 04-07-22 12-01-05 MO-252 Fig 15. Package outline SOT886 (XSON6) 74AUP1T57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 13 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm 1 SOT891 b 3 2 4× (1) L L1 e 6 5 4 e1 e1 6× A (1) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max A1 max b D E e e1 L L1 mm 0.5 0.04 0.20 0.12 1.05 0.95 1.05 0.95 0.55 0.35 0.35 0.27 0.40 0.32 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-04-06 07-05-15 SOT891 Fig 16. Package outline SOT891 (XSON6) 74AUP1T57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 14 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1.0 x 0.35 mm 1 SOT1115 b 3 2 (4×)(2) L L1 e 6 5 4 e1 e1 (6×)(2) A1 A D E terminal 1 index area 0 0.5 scale Dimensions Unit mm 1 mm A(1) A1 b D E e e1 max 0.35 0.04 0.20 0.95 1.05 nom 0.15 0.90 1.00 0.55 min 0.12 0.85 0.95 0.3 L L1 0.35 0.40 0.30 0.35 0.27 0.32 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version sot1115_po References IEC JEDEC JEITA European projection Issue date 10-04-02 10-04-07 SOT1115 Fig 17. Package outline SOT1115 (XSON6) 74AUP1T57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 15 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1.0 x 0.35 mm 1 SOT1202 b 3 2 (4×)(2) L L1 e 6 5 4 e1 e1 (6×)(2) A1 A D E terminal 1 index area 0 0.5 scale Dimensions Unit mm 1 mm A(1) A1 b D E e e1 L L1 max 0.35 0.04 0.20 1.05 1.05 0.35 0.40 nom 0.15 1.00 1.00 0.55 0.35 0.30 0.35 min 0.12 0.95 0.95 0.27 0.32 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version sot1202_po References IEC JEDEC JEITA European projection Issue date 10-04-02 10-04-06 SOT1202 Fig 18. Package outline SOT1202 (XSON6) 74AUP1T57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 16 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator 14. Abbreviations Table 12. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 15. Revision history Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes 74AUP1T57 v.5 20120815 Product data sheet - 74AUP1T57 v.4 Modifications: • Package outline drawing of SOT886 (Figure 15) modified. 74AUP1T57 v.4 20111201 Product data sheet - 74AUP1T57 v.3 74AUP1T57 v.3 20100721 Product data sheet - 74AUP1T57 v.2 74AUP1T57 v.2 20090803 Product data sheet - 74AUP1T57 v.1 74AUP1T57 v.1 20080103 Product data sheet - - 74AUP1T57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 17 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. 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Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 16.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 74AUP1T57 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 18 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 74AUP1T57 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 15 August 2012 © NXP B.V. 2012. All rights reserved. 19 of 20 74AUP1T57 NXP Semiconductors Low-power configurable gate with voltage-level translator 18. Contents 1 2 3 4 5 6 6.1 6.2 7 7.1 8 9 10 11 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Logic configurations . . . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5 Recommended operating conditions. . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information. . . . . . . . . . . . . . . . . . . . . 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 15 August 2012 Document identifier: 74AUP1T57