Ultra-configurable multiple function gate; 3-state

74LVC1G99
Ultra-configurable multiple function gate; 3-state
Rev. 8 — 5 April 2013
Product data sheet
1. General description
The 74LVC1G99 provides a low voltage, ultra-configurable, multiple function gate with
3-state output. The device can be configured as one of several logic functions including,
AND, OR, NAND, NOR, XOR, XNOR, inverter, buffer and MUX. No external components
are required to configure the device as all inputs can be connected directly to VCC or
GND. The 3-state output is controlled by the output enable input (OE). A HIGH level at OE
causes the output (Y) to assume a high-impedance OFF-state. When OE is LOW, the
output state is determined by the signals applied to the Schmitt trigger inputs (A, B, C and
D).
Due to the use of Schmitt trigger inputs the device is tolerant of slowly changing input
signals, transforming them into sharply defined, jitter free output signals. By eliminating
leakage current paths to VCC and GND, the inputs and disabled output are also
over-voltage tolerant, making the device suitable for mixed-voltage applications.
This device is fully specified for partial power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74LVC1G99 is fully specified over the supply range from 1.65 V to 5.5 V.
2. Features and benefits












Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant inputs for interfacing with 5 V logic
High noise immunity
Complies with JEDEC standard:
 JESD8-7 (1.65 V to 1.95 V)
 JESD8-5 (2.3 V to 2.7 V)
 JESD8-B/JESD36 (2.7 V to 3.6 V)
ESD protection:
 HBM JESD22-A114F exceeds 2000 V
 MM JESD22-A115-A exceeds 200 V
24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C.
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range
Name
Description
Version
74LVC1G99DP
40 C to +125 C
TSSOP8
plastic thin shrink small outline package; 8 leads; body SOT505-2
width 3 mm; lead length 0.5 mm
74LVC1G99GT
40 C to +125 C
XSON8
plastic extremely thin small outline package; no leads; SOT833-1
8 terminals; body 1  1.95  0.5 mm
74LVC1G99GF
40 C to +125 C
XSON8
extremely thin small outline package; no leads;
8 terminals; body 1.35  1  0.5 mm
74LVC1G99GD
40 C to +125 C
XSON8
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; body 3  2  0.5 mm
74LVC1G99GM
40 C to +125 C
XQFN8
plastic, extremely thin quad flat package; no leads;
8 terminals; body 1.6  1.6  0.5 mm
SOT902-2
74LVC1G99GN
40 C to +125 C
XSON8
extremely thin small outline package; no leads;
8 terminals; body 1.2  1.0  0.35 mm
SOT1116
74LVC1G99GS
40 C to +125 C
XSON8
extremely thin small outline package; no leads;
8 terminals; body 1.35  1.0  0.35 mm
SOT1203
SOT1089
4. Marking
Table 2.
Marking codes
Type number
Marking code[1]
74LVC1G99DP
V99
74LVC1G99GT
V99
74LVC1G99GF
YF
74LVC1G99GD
V99
74LVC1G99GM
V99
74LVC1G99GN
YF
74LVC1G99GS
YF
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
74LVC1G99
Product data sheet
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Rev. 8 — 5 April 2013
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
5. Functional diagram
OE
A
B
Y
C
D
Fig 1.
001aah322
Logic symbol
6. Pinning information
6.1 Pinning
74LVC1G99
OE
1
8
VCC
A
2
7
Y
B
3
6
D
GND
4
5
C
74LVC1G99
OE
1
8
VCC
A
2
7
Y
B
3
6
D
GND
4
5
C
001aah324
Transparent top view
001aah323
Fig 2.
Pin configuration SOT505-2
74LVC1G99
Product data sheet
Fig 3.
Pin configuration SOT833-1, SOT1089,
SOT1116 and SOT1203
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
74LVC1G99
74LVC1G99
1
8
VCC
A
2
7
Y
B
3
6
D
GND
4
5
C
1
D
C
8
Y
7
OE
2
6
A
3
5
B
GND
4
OE
VCC
terminal 1
index area
001aal775
Transparent top view
Transparent top view
Fig 4.
001aah325
Pin configuration SOT996-2
Fig 5.
Pin configuration SOT902-2
6.2 Pin description
Table 3.
Symbol
Pin description
Pin
Description
SOT505-2, SOT833-1, SOT1089,
SOT1116, SOT1203 and SOT996-2
SOT902-2
OE
1
7
output enable input OE (active LOW)
A
2
6
data input
B
3
5
data input
GND
4
4
ground (0 V)
C
5
3
data input
D
6
2
data input
Y
7
1
data output
VCC
8
8
supply voltage
74LVC1G99
Product data sheet
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
7. Functional description
Table 4.
Function table[1]
Input
Output
OE
D
C
B
A
Y
L
L
L
L
L
L
L
L
L
L
H
H
L
L
L
H
L
L
L
L
L
H
H
H
L
L
H
L
L
L
L
L
H
L
H
L
L
L
H
H
L
H
L
L
H
H
H
H
L
H
L
L
L
H
L
H
L
L
H
L
L
H
L
H
L
H
L
H
L
H
H
L
L
H
H
L
L
H
L
H
H
L
H
H
L
H
H
H
L
L
L
H
H
H
H
L
H
X
X
X
X
Z
[1]
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
74LVC1G99
Product data sheet
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
7.1 Logic configurations
Table 5.
Function selection table
Primary function
Complementary function
3-state buffer
3-state inverter
3-state 2-input multiplexer
3-state 2-input multiplexer with inverting output
3-state 2-input AND
3-state 2-input NOR with two inverting inputs
3-state 2-input AND with one inverting input
3-state 2-input NOR with one inverting input
3-state 2-input AND with two inverting inputs
3-state 2-input NOR
3-state 2-input NAND
3-state 2-input OR with two inverting inputs
3-state 2-input NAND with one inverting input
3-state 2-input OR with one inverting input
3-state 2-input NAND with two inverting inputs
3-state 2-input OR
3-state 2-input XOR
3-state 2-input XNOR
3-state 2-input XOR with one inverting input
7.2 3-state buffer functions available
Table 6.
Function table[1]
See Figure 6.
Function
Input
3-state buffer
[1]
OE
A
B
C
D
L
input
H or L
L
L
L
H or L
input
H
L
L
L
H
input
L
L
H
L
input
H
L
H
H or L
L
input
L
H or L
L
H
input
L
L
L
H or L
input
H = HIGH voltage level;
L = LOW voltage level.
OE
input
Y
001aah326
Fig 6.
3-state buffer function
74LVC1G99
Product data sheet
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
7.3 3-state inverter functions available
Table 7.
Function table[1]
See Figure 7.
Function
Input
3-state inverter
[1]
OE
A
B
C
D
L
input
H or L
L
H
L
X
input
H
H
L
L
H
input
H
L
H
L
input
L
L
H
H or L
L
input
L
H or L
H
H
input
L
H
H
H or L
input
H = HIGH voltage level;
L = LOW voltage level.
X = don’t care.
OE
input
Y
001aah327
Fig 7.
3-state inverter function
7.4 3-state multiplexer functions available
Table 8.
Function table[1]
See Figure 8.
Function
Input
3-state 2-input
multiplexer
[1]
OE
A
B
C
D
L
input 1
input 2
input 1 or input 2
L
L
input 2
input 1
input 2 or input 1
L
L
input 1
input 2
input 1 or input 2
H
L
input 2
input 1
input 2 or input 1
H
H = HIGH voltage level;
L = LOW voltage level.
OE
OE
input 1
input 1
Y
Fig 8.
Y
input 2
input 2
A/B
A/B
001aah328
3-state 2-input multiplexer function
74LVC1G99
Product data sheet
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
7.5 3-state AND/NOR functions available
Table 9.
Function table[1]
See Figure 9.
Number of inputs Function
Input
AND/NAND
OR/NOR
OE
A
B
C
D
2
3-state AND
3-state NOR
L
L
input 1
input 2
L
2
3-state AND
3-state NOR
L
L
input 2
input 1
L
[1]
H = HIGH voltage level;
L = LOW voltage level.
OE
OE
input 1
input 1
Y
Y
input 2
Fig 9.
input 2
001aah329
3-state AND/NOR function
Table 10. Function table[1]
See Figure 10.
Number of inputs Function
Input
AND/NAND
OR/NOR
OE
A
B
C
D
2
3-state AND
3-state NOR
L
input 2
L
input 1
L
2
3-state AND
3-state NOR
L
H
input 1
input 2
H
[1]
H = HIGH voltage level;
L = LOW voltage level.
OE
OE
input 1
input 1
Y
input 2
Y
input 2
001aah330
Fig 10. 3-state AND/NOR function
74LVC1G99
Product data sheet
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Rev. 8 — 5 April 2013
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
Table 11. Function table[1]
See Figure 11.
Number of inputs Function
Input
AND/NAND
OR/NOR
OE
A
B
C
D
2
3-state AND
3-state NOR
L
input 1
L
input 2
L
2
3-state AND
3-state NOR
L
H
input 2
input 1
H
[1]
H = HIGH voltage level;
L = LOW voltage level.
OE
OE
input 1
input 1
Y
Y
input 2
input 2
001aah331
Fig 11. 3-state AND/NOR function
Table 12. Function table[1]
See Figure 12.
Number of inputs Function
Input
AND/NAND
OR/NOR
OE
A
B
C
D
2
3-state AND
3-state NOR
L
input 1
H
input 2
L
2
3-state AND
3-state NOR
L
input 2
H
input 1
L
[1]
H = HIGH voltage level;
L = LOW voltage level.
OE
OE
input 1
input 1
Y
input 2
Y
input 2
001aah332
Fig 12. 3-state AND/NOR function
74LVC1G99
Product data sheet
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
7.6 3-state NAND/OR functions available
Table 13. Function table[1]
See Figure 13.
Number of inputs Function
Input
AND/NAND
OR/NOR
OE
A
B
C
D
2
3-state NAND
3-state OR
L
L
input 1
input 2
H
2
3-state NAND
3-state OR
L
L
input 2
input 1
H
[1]
H = HIGH voltage level;
L = LOW voltage level.
OE
OE
input 1
input 1
Y
Y
input 2
input 2
001aah333
Fig 13. 3-state NAND/OR function
Table 14. Function table[1]
See Figure 14.
Number of inputs Function
Input
AND/NAND
OR/NOR
OE
A
B
C
D
2
3-state NAND
3-state OR
L
input 2
L
input 1
H
2
3-state NAND
3-state OR
L
H
input 1
input 2
L
[1]
H = HIGH voltage level;
L = LOW voltage level.
OE
OE
input 1
input 1
Y
input 2
Y
input 2
001aah334
Fig 14. 3-state NAND/OR function
74LVC1G99
Product data sheet
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
Table 15. Function table[1]
See Figure 15.
Number of inputs Function
Input
AND/NAND
OR/NOR
OE
A
B
C
D
2
3-state NAND
3-state OR
L
input 1
L
input 2
H
2
3-state NAND
3-state OR
L
H
input 2
input 1
L
[1]
H = HIGH voltage level;
L = LOW voltage level.
OE
OE
input 1
input 1
Y
Y
input 2
input 2
001aah335
Fig 15. 3-state AND/NOR function
Table 16. Function table[1]
See Figure 16.
Number of inputs Function
Input
AND/NAND
OR/NOR
OE
A
B
C
D
2
3-state NAND
3-state OR
L
input 1
H
input 2
L
2
3-state NAND
3-state OR
L
input 2
H
input 1
L
[1]
H = HIGH voltage level;
L = LOW voltage level.
OE
OE
input 1
input 1
Y
input 2
Y
input 2
001aah336
Fig 16. 3-state AND/NOR function
74LVC1G99
Product data sheet
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
7.7 3-state XOR/XNOR functions available
Table 17. Function table[1]
See Figure 17.
Function
3-state XOR
[1]
Input
OE
A
B
C
D
L
input 1
H or L
L
input 2
L
input 2
H or L
L
input 1
L
H or L
input 1
H
input 2
L
H or L
input 2
H
input 1
L
L
H
input 1
input 2
L
L
H
input 2
input 1
H = HIGH voltage level;
L = LOW voltage level.
OE
input 1
Y
input 2
001aah337
Fig 17. 3-state XOR function
Table 18. Function table[1]
See Figure 18.
Function
Input
OE
A
B
C
D
3-state XOR
L
H
L
input 1
input 2
[1]
H = HIGH voltage level;
L = LOW voltage level.
OE
input 1
Y
input 2
001aah338
Fig 18. 3-state XOR function
74LVC1G99
Product data sheet
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
Table 19. Function table[1]
See Figure 19.
Function
Input
OE
A
B
C
D
3-state XOR
L
H
L
input 1
input 2
[1]
H = HIGH voltage level;
L = LOW voltage level.
OE
input 1
Y
input 2
001aah339
Fig 19. 3-state XOR function
Table 20. Function table[1]
See Figure 20.
Function
Input
OE
A
B
C
D
3-state XNOR
L
H
L
input 1
input 2
L
H
L
input 2
input 1
[1]
H = HIGH voltage level;
L = LOW voltage level.
OE
input 1
Y
input 2
001aah340
Fig 20. 3-state XNOR function
74LVC1G99
Product data sheet
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
8. Limiting values
Table 21. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC
supply voltage
IIK
input clamping current
VI
input voltage
IOK
output clamping current
Conditions
VI < 0 V
[1]
IO
output current
ICC
supply current
IGND
ground current
Ptot
total power dissipation
Tstg
storage temperature
Max
Unit
0.5
+6.5
V
50
-
mA
0.5
+6.5
V
-
50
mA
Active mode
[1][2]
0.5
VCC + 0.5
V
Power-down mode
[1][2]
0.5
+6.5
V
-
50
mA
-
100
mA
100
-
mA
-
250
mW
65
+150
C
VO > VCC or VO < 0 V
output voltage
VO
Min
VO = 0 V to VCC
Tamb = 40 C to +125 C
[3]
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
[3]
For TSSOP8 package: above 110 C the value of Ptot derates linearly with 8.0 mW/K.
For XSON8 and XQFN8 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 22.
Operating conditions
Symbol
Parameter
VCC
Conditions
Min
Max
Unit
supply voltage
1.65
5.5
V
VI
input voltage
0
5.5
V
VO
output voltage
Active mode
0
VCC
V
Power-down mode; VCC = 0 V
0
5.5
V
40
+125
C
-
20
ns/V
Tamb
ambient temperature
t/V
input transition rise and fall rate
74LVC1G99
Product data sheet
VCC = 1.65 V to 2.7 V
VCC = 2.7 V to 4.5 V
-
10
ns/V
VCC = 4.5 V to 5.5 V
-
5
ns/V
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
10. Static characteristics
Table 23. Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Min
Typ[1] Max
Unit
IO = 100 A; VCC = 1.65 V to 5.5 V
VCC  0.1
-
-
V
IO = 4 mA; VCC = 1.65 V
1.2
-
-
V
IO = 8 mA; VCC = 2.3 V
1.9
-
-
V
IO = 12 mA; VCC = 2.7 V
2.2
-
-
V
IO = 24 mA; VCC = 3.0 V
2.3
-
-
V
IO = 32 mA; VCC = 4.5 V
3.8
-
-
V
Conditions
Tamb = 40 C to +85 C
VOH
VOL
HIGH-level output voltage
LOW-level output voltage
VI = VT+ or VT
VI = VT+ or VT
IO = 100 A; VCC = 1.65 V to 5.5 V
-
-
0.1
V
IO = 4 mA; VCC = 1.65 V
-
-
0.45
V
IO = 8 mA; VCC = 2.3 V
-
-
0.3
V
IO = 12 mA; VCC = 2.7 V
-
-
0.4
V
IO = 24 mA; VCC = 3.0 V
-
-
0.55
V
IO = 32 mA; VCC = 4.5 V
-
-
0.55
V
II
input leakage current
VCC = 0 V to 5.5 V; VI = 5.5 V or GND
-
0.1
5
A
IOZ
OFF-state output current
VCC = 3.6 V; VI = VIH or VIL;
VO = 5.5 V or GND
-
0.1
10
A
IOFF
power-off leakage current
VCC = 0 V; VI or VO = 5.5 V
-
0.1
10
A
ICC
supply current
VCC = 1.65 V to 5.5 V;
VI = 5.5 V or GND; IO = 0 A
-
0.1
10
A
ICC
additional supply current
per pin; VCC = 2.3 V to 5.5 V;
VI = VCC  0.6 V; IO = 0 A
-
5
500
A
CI
input capacitance
VCC = 3.3 V; VI = GND to VCC
-
2.5
-
pF
IO = 100 A; VCC = 1.65 V to 5.5 V
VCC  0.1
-
-
V
IO = 4 mA; VCC = 1.65 V
0.95
-
-
V
IO = 8 mA; VCC = 2.3 V
1.7
-
-
V
IO = 12 mA; VCC = 2.7 V
1.9
-
-
V
IO = 24 mA; VCC = 3.0 V
2.0
-
-
V
IO = 32 mA; VCC = 4.5 V
3.4
-
-
V
Tamb = 40 C to +125 C
VOH
VOL
HIGH-level output voltage
LOW-level output voltage
74LVC1G99
Product data sheet
VI = VT+ or VT
VI = VT+ or VT
IO = 100 A; VCC = 1.65 V to 5.5 V
-
-
0.1
V
IO = 4 mA; VCC = 1.65 V
-
-
0.70
V
IO = 8 mA; VCC = 2.3 V
-
-
0.45
V
IO = 12 mA; VCC = 2.7 V
-
-
0.60
V
IO = 24 mA; VCC = 3.0 V
-
-
0.80
V
IO = 32 mA; VCC = 4.5 V
-
-
0.80
V
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
15 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
Table 23. Static characteristics …continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ[1] Max
II
input leakage current
VCC = 0 V to 5.5 V; VI = 5.5 V or GND
-
-
100
A
IOZ
OFF-state output current
VCC = 3.6 V; VI = VIH or VIL;
VO = 5.5 V or GND
-
-
200
A
IOFF
power-off leakage current
VCC = 0 V; VI or VO = 5.5 V
-
-
200
A
ICC
supply current
VCC = 1.65 V to 5.5 V;
VI = 5.5 V or GND; IO = 0 A
-
-
200
A
ICC
additional supply current
per pin; VCC = 2.3 V to 5.5 V;
VI = VCC  0.6 V; IO = 0 A
-
-
5000
A
[1]
Unit
All typical values are measured at VCC = 3.3 V and Tamb = 25 C.
11. Dynamic characteristics
Table 24. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 23.
Symbol Parameter
tpd
25 C
Conditions
Max
Min
VCC = 1.65 V to 1.95 V
-
7.5
-
2.8
30.8
38.5
ns
VCC = 2.3 V to 2.7 V
-
5.0
-
2.0
11.7
14.6
ns
VCC = 2.7 V
-
5.4
-
2.0
9.0
11.3
ns
VCC = 3.0 V to 3.6 V
-
4.5
-
1.8
8.4
10.5
ns
-
3.8
-
1.8
5.5
6.9
ns
VCC = 1.65 V to 1.95 V
-
7.5
-
2.8
28.9
36.2
ns
VCC = 2.3 V to 2.7 V
-
5.0
-
2.0
11.3
14.2
ns
VCC = 2.7 V
-
5.4
-
2.0
9.0
11.3
ns
VCC = 3.0 V to 3.6 V
-
4.5
-
1.8
8.2
10.3
ns
-
3.8
-
1.8
5.4
6.8
ns
VCC = 1.65 V to 1.95 V
-
7.8
-
3.2
29.8
37.3
ns
VCC = 2.3 V to 2.7 V
-
5.2
-
2.3
12.3
15.4
ns
VCC = 2.7 V
-
5.3
-
2.3
9.6
12.0
ns
VCC = 3.0 V to 3.6 V
-
4.6
-
2.3
8.6
10.8
ns
-
3.8
-
1.8
5.7
7.2
ns
VCC = 1.65 V to 1.95 V
-
7.0
-
2.8
25.7
32.2
ns
VCC = 2.3 V to 2.7 V
-
4.6
-
2.0
10.7
13.4
ns
VCC = 2.7 V
-
4.8
-
2.0
9.2
11.5
ns
VCC = 3.0 V to 3.6 V
-
4.1
-
1.8
7.6
9.5
ns
VCC = 4.5 V to 5.5 V
-
3.4
-
1.6
5.2
6.5
ns
Max
Max
(85 C) (125 C)
[2]
VCC = 4.5 V to 5.5 V
[2]
B to Y; see Figure 21
VCC = 4.5 V to 5.5 V
[2]
C to Y; see Figure 21
VCC = 4.5 V to 5.5 V
[2]
D to Y; see Figure 21
Product data sheet
Unit
Min
propagation delay A to Y; see Figure 21
74LVC1G99
40 C to +125 C
Typ[1]
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© NXP B.V. 2013. All rights reserved.
16 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
Table 24. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 23.
Symbol Parameter
ten
enable time
disable time
tdis
25 C
Conditions
Max
Min
VCC = 1.65 V to 1.95 V
-
5.7
-
2.0
25.2
32.0
ns
VCC = 2.3 V to 2.7 V
-
3.8
-
1.4
11.3
14.0
ns
VCC = 2.7 V
-
4.2
-
1.4
8.6
11.0
ns
VCC = 3.0 V to 3.6 V
-
3.5
-
1.4
7.0
9.0
ns
VCC = 4.5 V to 5.5 V
-
2.7
-
1.4
4.7
6.0
ns
-
5.7
-
3.0
15.0
19.0
ns
OE to Y; see Figure 22
OE to Y; see Figure 22
[4]
VCC = 2.3 V to 2.7 V
-
3.6
-
2.0
5.8
7.3
ns
VCC = 2.7 V
-
4.5
-
2.0
6.6
8.2
ns
VCC = 3.0 V to 3.6 V
-
4.5
-
2.1
5.9
7.4
ns
-
3.4
-
1.0
4.5
5.6
ns
VCC = 1.65 V to 1.95 V
-
14
-
-
-
-
pF
per buffer (output enabled);
fi = 10 MHz; CL = 50 pF;
VI = GND to VCC
[5]
VCC = 2.3 V to 2.7 V
-
16
-
-
-
-
pF
VCC = 2.7 V
-
18
-
-
-
-
pF
VCC = 3.0 V to 3.6 V
-
25
-
-
-
-
pF
VCC = 4.5 V to 5.5 V
-
30
-
-
-
-
pF
[1]
All typical values are measured at nominal VCC.
[2]
tpd is the same as tPLH and tPHL.
[3]
ten is the same as tPZH and tPZL.
[4]
tdis is the same as tPHZ and tPLZ.
[5]
Max
Max
(85 C) (125 C)
[3]
VCC = 4.5 V to 5.5 V
power dissipation
capacitance
Unit
Min
VCC = 1.65 V to 1.95 V
CPD
40 C to +125 C
Typ[1]
CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD  VCC2  fi  N + (CL  VCC2  fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL  VCC2  fo) = sum of the outputs.
74LVC1G99
Product data sheet
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Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
17 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
12. Waveforms
VI
VM
A, B, C, D input
VM
GND
tPHL
tPLH
VOH
VM
Y output
VM
VOL
tPLH
tPHL
VOH
VM
Y output
VM
VOL
001aah341
Measurement points are given in Table 25.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Fig 21. The data input (A, B, C, D) to output (Y) propagation delays
VI
OE input
VM
GND
tPLZ
tPZL
VCC
output
LOW-to-OFF
OFF-to-LOW
VM
VX
VOL
tPHZ
tPZH
VOH
VY
output
HIGH-to-OFF
OFF-to-HIGH
VM
GND
outputs
enabled
outputs
enabled
outputs
disabled
mna644
Measurement points are given in Table 25.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Fig 22. 3-state enable and disable times
Table 25.
Measurement points
Supply voltage
Input
Output
VCC
VM
VM
VX
VY
1.65 V to 1.95 V
0.5VCC
0.5VCC
VOL + 0.15 V
VOH  0.15 V
2.3 V to 2.7 V
0.5VCC
0.5VCC
VOL + 0.15 V
VOH  0.15 V
2.7 V
1.5 V
1.5 V
VOL + 0.3 V
VOH  0.3 V
3.0 V to 3.6 V
1.5 V
1.5 V
VOL + 0.3 V
VOH  0.3 V
4.5 V to 5.5 V
0.5VCC
0.5VCC
VOL + 0.3 V
VOH  0.3 V
74LVC1G99
Product data sheet
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Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
18 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
VEXT
VCC
VI
RL
VO
G
DUT
RT
RL
CL
mna616
Test data is given in Table 26.
Definitions for test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
VEXT = External voltage for measuring switching times.
Fig 23. Test circuit for measuring switching times
Table 26.
Test data
Supply voltage
1.65 V to 1.95 V
Input
Load
VEXT
VI
tr = tf
CL
RL
tPLH, tPHL
tPZH, tPHZ
tPZL, tPLZ
VCC
 2.0 ns
30 pF
1 k
open
GND
2VCC
2.3 V to 2.7 V
VCC
 2.0 ns
30 pF
500 
open
GND
2VCC
2.7 V
2.7 V
 2.5 ns
50 pF
500 
open
GND
6V
3.0 V to 3.6 V
2.7 V
 2.5 ns
50 pF
500 
open
GND
6V
4.5 V to 5.5 V
VCC
 2.5 ns
50 pF
500 
open
GND
2VCC
13. Transfer characteristics
Table 27. Transfer characteristics
Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 23
Symbol Parameter
40 C to +85 C
Conditions
Min
VT+
positive-going
threshold voltage
74LVC1G99
Product data sheet
Typ[1]
Max
40 C to +125 C
Min
Unit
Max
see Figure 24, Figure 25,
Figure 26, Figure 27 and
Figure 28
VCC = 1.8 V
0.70
1.02
1.20
0.67
1.20
V
VCC = 2.3 V
1.11
1.42
1.60
1.08
1.60
V
VCC = 3.0 V
1.50
1.79
2.00
1.47
2.00
V
VCC = 4.5 V
2.16
2.52
2.74
2.13
2.74
V
VCC = 5.5 V
2.61
2.99
3.33
2.58
3.33
V
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Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
19 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
Table 27. Transfer characteristics …continued
Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 23
Symbol Parameter
40 C to +85 C
Conditions
Typ[1]
Min
VT
negative-going
threshold voltage
Min
Unit
Max
see Figure 24, Figure 25,
Figure 26, Figure 27 and
Figure 28
VCC = 1.8 V
0.30
0.53
0.72
0.30
0.75
V
VCC = 2.3 V
0.58
0.77
1.00
0.58
1.03
V
VCC = 3.0 V
0.80
1.04
1.30
0.80
1.33
V
VCC = 4.5 V
1.21
1.55
1.90
1.21
1.93
V
VCC = 5.5 V
1.45
1.86
2.29
1.45
2.32
V
VCC = 1.8 V
0.30
0.48
0.62
0.23
0.62
V
VCC = 2.3 V
0.40
0.64
0.80
0.34
0.80
V
VCC = 3.0 V
0.50
0.75
1.00
0.44
1.00
V
VCC = 4.5 V
0.71
0.97
1.20
0.65
1.20
V
VCC = 5.5 V
0.71
1.13
1.40
0.65
1.40
V
hysteresis voltage (VT+  VT); see Figure 24,
Figure 25, Figure 26,
Figure 27 and Figure 28
VH
[1]
Max
40 C to +125 C
All typical values are measured at Tamb = 25 C
14. Waveforms transfer characteristics
VO
VT+
VI
VT−
VI
VH
VT−
VT+
Fig 24. Transfer characteristic
74LVC1G99
Product data sheet
VH
VO
mna207
mna208
Fig 25. Definition of VT+, VT and VH
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© NXP B.V. 2013. All rights reserved.
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74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
VO
VI
VT+
VT−
VT−
VO
VI
VH
VT+
VH
mnb155
mnb154
Fig 26. Transfer characteristic
Fig 27. Definition of VT+, VT and VH
001aab594
16
I CC
(mA)
12
8
4
0
0
1
2
3
VI (V)
Fig 28. Typical 74LVC1G99 transfer characteristic; VCC = 3.0 V
74LVC1G99
Product data sheet
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Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
21 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
15. Package outline
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm
D
E
A
SOT505-2
X
c
HE
y
v M A
Z
5
8
A
A2
(A3)
A1
pin 1 index
θ
Lp
L
1
4
e
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(1)
e
HE
L
Lp
v
w
y
Z(1)
θ
mm
1.1
0.15
0.00
0.95
0.75
0.25
0.38
0.22
0.18
0.08
3.1
2.9
3.1
2.9
0.65
4.1
3.9
0.5
0.47
0.33
0.2
0.13
0.1
0.70
0.35
8°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT505-2
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
02-01-16
---
Fig 29. Package outline SOT505-2 (TSSOP8)
74LVC1G99
Product data sheet
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Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
22 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm
1
2
SOT833-1
b
4
3
4×
(2)
L
L1
e
8
7
6
e1
5
e1
e1
8×
A
(2)
A1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A(1)
max
A1
max
b
D
E
e
e1
L
L1
mm
0.5
0.04
0.25
0.17
2.0
1.9
1.05
0.95
0.6
0.5
0.35
0.27
0.40
0.32
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT833-1
---
MO-252
---
EUROPEAN
PROJECTION
ISSUE DATE
07-11-14
07-12-07
Fig 30. Package outline SOT833-1 (XSON8)
74LVC1G99
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
23 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
XSON8: extremely thin small outline package; no leads;
8 terminals; body 1.35 x 1 x 0.5 mm
SOT1089
E
terminal 1
index area
D
A
A1
detail X
(4×)(2)
e
L
(8×)(2)
b 4
5
e1
1
terminal 1
index area
8
L1
X
0
0.5
scale
Dimensions
Unit
mm
max
nom
min
1 mm
A(1)
0.5
A1
b
D
E
e
e1
L
L1
0.35 0.40
0.04 0.20 1.40 1.05
0.15 1.35 1.00 0.55 0.35 0.30 0.35
0.27 0.32
0.12 1.30 0.95
Note
1. Including plating thickness.
2. Visible depending upon used manufacturing technology.
Outline
version
SOT1089
sot1089_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
10-04-09
10-04-12
MO-252
Fig 31. Package outline SOT1089 (XSON8)
74LVC1G99
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
24 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
XSON8: plastic extremely thin small outline package; no leads;
8 terminals; body 3 x 2 x 0.5 mm
B
D
SOT996-2
A
E
A
A1
detail X
terminal 1
index area
e1
1
4
8
5
C
C A B
C
v
w
b
e
L1
y
y1 C
L2
L
X
0
1
2 mm
scale
Dimensions (mm are the original dimensions)
Unit(1)
mm
max
nom
min
A
A1
b
0.05 0.35
D
E
2.1
3.1
0.5
0.00 0.15
1.9
e
e1
0.5
1.5
2.9
L
L1
L2
0.5
0.15
0.6
0.3
0.05
0.4
v
0.1
w
y
0.05 0.05
y1
0.1
sot996-2_po
Outline
version
References
IEC
JEDEC
JEITA
European
projection
Issue date
07-12-21
12-11-20
SOT996-2
Fig 32. Package outline SOT996-2 (XSON8)
74LVC1G99
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
25 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
XQFN8: plastic, extremely thin quad flat package; no leads;
8 terminals; body 1.6 x 1.6 x 0.5 mm
SOT902-2
X
A
B
D
terminal 1
index area
E
A
A1
detail X
e
v
w
b
4
3
C
C A B
C
y
y1 C
5
e1
2
6
1
7
terminal 1
index area
8
L
metal area
not for soldering
L1
0
1
Dimensions
Unit(1)
mm
max
nom
min
2 mm
scale
A
0.5
A1
b
D
E
e
e1
0.05 0.25 1.65 1.65
0.20 1.60 1.60 0.55
0.00 0.15 1.55 1.55
0.5
L
L1
v
0.35 0.15
0.30 0.10
0.25 0.05
0.1
w
y
y1
0.05 0.05 0.05
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
References
Outline
version
IEC
JEDEC
JEITA
SOT902-2
---
MO-255
---
sot902-2_po
European
projection
Issue date
10-11-02
11-03-31
Fig 33. Package outline SOT902-2 (XQFN8)
74LVC1G99
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
26 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
XSON8: extremely thin small outline package; no leads;
8 terminals; body 1.2 x 1.0 x 0.35 mm
1
2
SOT1116
b
4
3
(4×)(2)
L
L1
e
8
7
e1
6
e1
5
e1
(8×)(2)
A1
A
D
E
terminal 1
index area
0
0.5
scale
Dimensions
Unit
mm
1 mm
A(1)
A1
b
D
E
e
e1
max 0.35 0.04 0.20 1.25 1.05
nom
0.15 1.20 1.00 0.55
min
0.12 1.15 0.95
0.3
L
L1
0.35 0.40
0.30 0.35
0.27 0.32
Note
1. Including plating thickness.
2. Visible depending upon used manufacturing technology.
Outline
version
sot1116_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
10-04-02
10-04-07
SOT1116
Fig 34. Package outline SOT1116 (XSON8)
74LVC1G99
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
27 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
XSON8: extremely thin small outline package; no leads;
8 terminals; body 1.35 x 1.0 x 0.35 mm
SOT1203
b
2
1
3
(4×)(2)
4
L
L1
e
8
7
6
e1
e1
5
e1
(8×)(2)
A1
A
D
E
terminal 1
index area
0
0.5
scale
Dimensions
Unit
mm
1 mm
A(1)
A1
b
D
E
e
e1
L
L1
max 0.35 0.04 0.20 1.40 1.05
0.35 0.40
nom
0.15 1.35 1.00 0.55 0.35 0.30 0.35
min
0.12 1.30 0.95
0.27 0.32
Note
1. Including plating thickness.
2. Visible depending upon used manufacturing technology.
Outline
version
sot1203_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
10-04-02
10-04-06
SOT1203
Fig 35. Package outline SOT1203 (XSON8)
74LVC1G99
Product data sheet
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Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
28 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
16. Abbreviations
Table 28.
Abbreviations
Acronym
Description
CMOS
Complementary Metal-Oxide Semiconductor
DUT
Device Under Test
ESD
ElectroStatic Discharge
HBM
Human Body Model
MM
Machine Model
TTL
Transistor-Transistor Logic
17. Revision history
Table 29.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
74LVC1G99 v.8
20130405
Product data sheet
-
74LVC1G99 v.7
Modifications:
74LVC1G99 v.7
Modifications:
74LVC1G99 v.6
Modifications:
•
For type number 74LVC1G99GD XSON8U has changed to XSON8.
20120622
•
-
74LVC1G99 v.6
For type number 74LVC1G99GM the SOT code has changed to SOT902-2.
20111201
•
Product data sheet
Product data sheet
-
74LVC1G99 v.5
Legal pages updated.
74LVC1G99 v.5
20101021
Product data sheet
-
74LVC1G99 v.4
74LVC1G99 v.4
20100416
Product data sheet
-
74LVC1G99 v.3
74LVC1G99 v.3
20091203
Product data sheet
-
74LVC1G99 v.2
74LVC1G99 v.2
20080208
Product data sheet
-
74LVC1G99 v.1
74LVC1G99 v.1
20080103
Product data sheet
-
-
74LVC1G99
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
29 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
18. Legal information
18.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
18.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
18.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
74LVC1G99
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
30 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
18.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
19. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
74LVC1G99
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 5 April 2013
© NXP B.V. 2013. All rights reserved.
31 of 32
74LVC1G99
NXP Semiconductors
Ultra-configurable multiple function gate; 3-state
20. Contents
1
2
3
4
5
6
6.1
6.2
7
7.1
7.2
7.3
7.4
7.5
7.6
7.7
8
9
10
11
12
13
14
15
16
17
18
18.1
18.2
18.3
18.4
19
20
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional description . . . . . . . . . . . . . . . . . . . 5
Logic configurations . . . . . . . . . . . . . . . . . . . . . 6
3-state buffer functions available . . . . . . . . . . . 6
3-state inverter functions available . . . . . . . . . . 7
3-state multiplexer functions available . . . . . . . 7
3-state AND/NOR functions available. . . . . . . . 8
3-state NAND/OR functions available. . . . . . . 10
3-state XOR/XNOR functions available . . . . . 12
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 14
Recommended operating conditions. . . . . . . 14
Static characteristics. . . . . . . . . . . . . . . . . . . . 15
Dynamic characteristics . . . . . . . . . . . . . . . . . 16
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Transfer characteristics . . . . . . . . . . . . . . . . . 19
Waveforms transfer characteristics. . . . . . . . 20
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 22
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 29
Legal information. . . . . . . . . . . . . . . . . . . . . . . 30
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 30
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Contact information. . . . . . . . . . . . . . . . . . . . . 31
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 5 April 2013
Document identifier: 74LVC1G99