DISCRETE SEMICONDUCTORS DATA SHEET BSH299 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor FEATURES BSH299 PINNING - SOT363 • Low threshold voltage PIN SYMBOL • High-speed switching 1 d drain • No secondary breakdown 2 d drain • Direct interface to C-MOS, TTL, etc. 3 g gate DESCRIPTION 4 s source APPLICATIONS 5 d drain • Power management 6 d drain • Battery powered applications e.g. cellular phones • General purpose switch. handbook, halfpage 6 5 d 4 DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package. g 1 CAUTION 2 3 s Top view The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. MAM396 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. − MAX. −50 UNIT VDS drain-source voltage (DC) VGSO gate-source voltage (DC) open drain − ±20 V VGSth gate-source threshold voltage ID = −1 mA; VDS = VGS −0.8 −2 V ID drain current (DC) Ts = 80 °C − −0.2 A RDSon drain-source on-state resistance ID = −0.13 A; VGS = −10 V − 10 Ω Ptot total power dissipation Ts = 80 °C − 0.7 W 1998 Feb 18 2 V Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) − −50 V VGSO gate-source voltage (DC) open drain − ±20 V ID drain current (DC) Ts = 80 °C; note 1 − −0.2 A IDM peak drain current note 2 − −0.8 A Ptot total power dissipation Ts = 80 °C; see Fig.2 − 0.7 W Tamb = 25 °C; note 3; see Fig.2 − 0.98 W Tamb = 25 °C; note 4; see Fig.2 − 0.66 W Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 150 °C Notes 1. Ts is the temperature at the soldering point of the drain lead. 2. Pulse width and duty cycle limited by maximum junction temperature. 3. Device mounted on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W. 4. Device mounted on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. THERMAL CHARACTERISTICS SYMBOL Rth j-s 1998 Feb 18 PARAMETER thermal resistance from junction to soldering point; see Fig.4 3 VALUE UNIT 100 K/W Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. V(BR)DSS drain-source breakdown voltage VGS = 0; ID = −10 µA −50 VGSth gate-source threshold voltage VGS = VDS ; ID = −1 mA −0.8 IDSS drain-source leakage current VGS = 0; VDS = −40 V − VGS = 0; VDS = −50 V − TYP. − MAX. UNIT − V − −2 V − −100 nA − −10 µA VGS = 0; VDS = −50 V; Tj = 125 °C − − −60 µA IGSS gate leakage current VGS = ±20 V; VDS = 0 − − ±10 nA RDSon drain-source on-state resistance VGS = −10 V; ID = −0.13 A; see Fig.10 − − 10 Ω yfs forward transfer admittance VDS = −25 V; ID = −0.13 A 50 − − mS Ciss input capacitance − 25 45 pF Coss output capacitance VGS = 0; VDS = −25 V; f = 1 MHz; see Fig.7 − 15 25 pF Crss reverse transfer capacitance − 3.5 12 pF Switching times (see Figs 5 and 6) ton turn-on switching time VGS = 0 to −10 V; VDD = −40 V; ID = −0.2 A − 3 − ns toff turn-off switching time VGS = −10 to 0 V; VDD = −40 V; ID = −0.2 A − 7 − ns 1998 Feb 18 4 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor MGL382 1 BSH299 MGL383 −1 handbook, halfpage handbook, halfpage Ptot (W) pulsed ID (A) 0.8 −10−1 DC 0.6 0.4 −10−2 0.2 −10−3 −10−1 0 0 50 100 150 200 Ts (oC) −10 −1 Fig.2 Power derating curve. VDS (V) Fig.3 SOAR. MGL384 103 Rth j-s (K/W) 102 10 −102 tp (s) = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 tp δ= T P 0.01 1 0.00 t tp T 10−1 10−6 10−5 10−4 10−3 10−2 10−1 t p (s) 1 Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values. 1998 Feb 18 5 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 handbook, halfpage VDD = −40 V handbook, halfpage 10 % INPUT 90 % 10 % OUTPUT 0V −10 V ID 90 % 50 Ω ton toff MLD189 MBB690 Fig.5 Switching time test circuit. Fig.6 Input and output waveforms. MLD191 80 MLD197 −600 handbook, halfpage handbook, halfpage C (pF) ID VGS = −10 V −7.5 V −6 V (mA) 60 −400 −5 V 40 Ciss 20 −4 V −200 Coss −3 V Crss 0 0 −10 −20 VDS (V) −2.5 V 0 −30 0 −2 −4 −6 −8 −10 −12 VDS (V) VGS = 0; Tj = 25 °C; f = 1 MHz. Tj = 25 °C. Fig.7 1998 Feb 18 Capacitance as a function of drain-source voltage; typical values. Fig.8 Output characteristics; typical values. 6 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor MLD196 −600 BSH299 MLD198 60 handbook, halfpage handbook, halfpage ID (mA) RDSon (Ω) −400 40 −200 20 VGS = −2.5 V −3 V −4 V −5 V −7.5 V −10 V 0 −2 0 −4 −6 0 −1 −8 −10 VGS (V) −10 −102 ID (mA) −103 Tj = 25 °C; tp = 300 µs; δ = 0. VDS = −10 V; Tj = 25 °C. Fig.9 Fig.10 Drain-source on-state resistance as a function of drain current; typical values. Transfer characteristics; typical values. MLD195 1.2 MLD194 1.8 handbook, halfpage handbook, halfpage k k (1) (2) 1.0 1.4 0.8 1.0 0.6 −50 0 50 100 0.6 150 Tj (°C) 0 50 100 Tj (°C) 150 k = (RDSon at Tj)/(RDSon at 25 °C). (1) ID = −130 mA; VGS = −10 V. (2) ID = −20 mA; VGS = −2.4 V. k = (VGSth at Tj)/(VGSth at 25 °C). ID = −1 mA; VDS = VGS. Fig.11 Temperature coefficient of gate-source threshold voltage as a function of junction temperature; typical values. 1998 Feb 18 −50 Fig.12 Temperature coefficient of drain-source on-resistance as a function of junction temperature; typical values. 7 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 1998 Feb 18 REFERENCES IEC JEDEC EIAJ SC-88 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor BSH299 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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