PHILIPS BSH299

DISCRETE SEMICONDUCTORS
DATA SHEET
BSH299
P-channel enhancement mode
MOS transistor
Objective specification
File under Discrete Semiconductors, SC13b
1998 Feb 18
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
FEATURES
BSH299
PINNING - SOT363
• Low threshold voltage
PIN
SYMBOL
• High-speed switching
1
d
drain
• No secondary breakdown
2
d
drain
• Direct interface to C-MOS, TTL, etc.
3
g
gate
DESCRIPTION
4
s
source
APPLICATIONS
5
d
drain
• Power management
6
d
drain
• Battery powered applications e.g. cellular phones
• General purpose switch.
handbook, halfpage
6
5
d
4
DESCRIPTION
P-channel enhancement mode MOS transistor in a
SOT363 SMD package.
g
1
CAUTION
2
3
s
Top view
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
MAM396
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
−50
UNIT
VDS
drain-source voltage (DC)
VGSO
gate-source voltage (DC)
open drain
−
±20
V
VGSth
gate-source threshold voltage
ID = −1 mA; VDS = VGS
−0.8
−2
V
ID
drain current (DC)
Ts = 80 °C
−
−0.2
A
RDSon
drain-source on-state resistance
ID = −0.13 A; VGS = −10 V
−
10
Ω
Ptot
total power dissipation
Ts = 80 °C
−
0.7
W
1998 Feb 18
2
V
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
−
−50
V
VGSO
gate-source voltage (DC)
open drain
−
±20
V
ID
drain current (DC)
Ts = 80 °C; note 1
−
−0.2
A
IDM
peak drain current
note 2
−
−0.8
A
Ptot
total power dissipation
Ts = 80 °C; see Fig.2
−
0.7
W
Tamb = 25 °C; note 3; see Fig.2
−
0.98
W
Tamb = 25 °C; note 4; see Fig.2
−
0.66
W
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
150
°C
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on a printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
1998 Feb 18
PARAMETER
thermal resistance from junction to soldering point; see Fig.4
3
VALUE
UNIT
100
K/W
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = −10 µA
−50
VGSth
gate-source threshold voltage
VGS = VDS ; ID = −1 mA
−0.8
IDSS
drain-source leakage current
VGS = 0; VDS = −40 V
−
VGS = 0; VDS = −50 V
−
TYP.
−
MAX.
UNIT
−
V
−
−2
V
−
−100
nA
−
−10
µA
VGS = 0; VDS = −50 V; Tj = 125 °C −
−
−60
µA
IGSS
gate leakage current
VGS = ±20 V; VDS = 0
−
−
±10
nA
RDSon
drain-source on-state resistance
VGS = −10 V; ID = −0.13 A;
see Fig.10
−
−
10
Ω
yfs
forward transfer admittance
VDS = −25 V; ID = −0.13 A
50
−
−
mS
Ciss
input capacitance
−
25
45
pF
Coss
output capacitance
VGS = 0; VDS = −25 V; f = 1 MHz;
see Fig.7
−
15
25
pF
Crss
reverse transfer capacitance
−
3.5
12
pF
Switching times (see Figs 5 and 6)
ton
turn-on switching time
VGS = 0 to −10 V; VDD = −40 V;
ID = −0.2 A
−
3
−
ns
toff
turn-off switching time
VGS = −10 to 0 V; VDD = −40 V;
ID = −0.2 A
−
7
−
ns
1998 Feb 18
4
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
MGL382
1
BSH299
MGL383
−1
handbook, halfpage
handbook, halfpage
Ptot
(W)
pulsed
ID
(A)
0.8
−10−1
DC
0.6
0.4
−10−2
0.2
−10−3
−10−1
0
0
50
100
150
200
Ts (oC)
−10
−1
Fig.2 Power derating curve.
VDS (V)
Fig.3 SOAR.
MGL384
103
Rth j-s
(K/W)
102
10
−102
tp (s) =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
tp
δ= T
P
0.01
1
0.00
t
tp
T
10−1
10−6
10−5
10−4
10−3
10−2
10−1
t p (s)
1
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1998 Feb 18
5
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
handbook, halfpage
VDD = −40 V
handbook, halfpage
10 %
INPUT
90 %
10 %
OUTPUT
0V
−10 V
ID
90 %
50 Ω
ton
toff
MLD189
MBB690
Fig.5 Switching time test circuit.
Fig.6 Input and output waveforms.
MLD191
80
MLD197
−600
handbook, halfpage
handbook, halfpage
C
(pF)
ID
VGS = −10 V −7.5 V
−6 V
(mA)
60
−400
−5 V
40
Ciss
20
−4 V
−200
Coss
−3 V
Crss
0
0
−10
−20
VDS (V)
−2.5 V
0
−30
0
−2
−4
−6
−8
−10
−12
VDS (V)
VGS = 0; Tj = 25 °C; f = 1 MHz.
Tj = 25 °C.
Fig.7
1998 Feb 18
Capacitance as a function of
drain-source voltage; typical values.
Fig.8 Output characteristics; typical values.
6
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
MLD196
−600
BSH299
MLD198
60
handbook, halfpage
handbook, halfpage
ID
(mA)
RDSon
(Ω)
−400
40
−200
20
VGS = −2.5 V −3 V −4 V −5 V
−7.5 V
−10 V
0
−2
0
−4
−6
0
−1
−8
−10
VGS (V)
−10
−102
ID (mA)
−103
Tj = 25 °C; tp = 300 µs; δ = 0.
VDS = −10 V; Tj = 25 °C.
Fig.9
Fig.10 Drain-source on-state resistance as a
function of drain current; typical values.
Transfer characteristics; typical values.
MLD195
1.2
MLD194
1.8
handbook, halfpage
handbook, halfpage
k
k
(1)
(2)
1.0
1.4
0.8
1.0
0.6
−50
0
50
100
0.6
150
Tj (°C)
0
50
100
Tj (°C)
150
k = (RDSon at Tj)/(RDSon at 25 °C).
(1) ID = −130 mA; VGS = −10 V.
(2) ID = −20 mA; VGS = −2.4 V.
k = (VGSth at Tj)/(VGSth at 25 °C).
ID = −1 mA; VDS = VGS.
Fig.11 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; typical values.
1998 Feb 18
−50
Fig.12 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; typical values.
7
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
1998 Feb 18
REFERENCES
IEC
JEDEC
EIAJ
SC-88
8
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Feb 18
9
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
NOTES
1998 Feb 18
10
BSH299
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
NOTES
1998 Feb 18
11
BSH299
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
135108/00/01/pp12
Date of release: 1998 Feb 18
Document order number:
9397 750 03223