Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat ICsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time VBE = 0 PINNING - SOT429 PIN MAX. UNIT 8 0.2 1500 800 12 30 125 5.0 0.35 V V A A W V A µs Tmb ≤ 25 ˚C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 A; IB(end) = 1.1 A PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter tab TYP. collector c b 2 1 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20 ms period Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 1500 800 12 30 8 12 200 7 125 150 150 V V A A A A mA A W ˚C ˚C TYP. MAX. UNIT - 1.0 K/W 45 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Junction to mounting base - Rth j-a Junction to ambient in free air 1 Turn-off current. September 1997 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current IEBO BVEBO VCEOsust Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 8.0 A; IB = 1.6 A IC = 8.0 A; IB = 1.6 A IC = 100 mA; VCE = 5 V IC = 8 A; VCE = 5 V MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 800 13.5 - 1.0 - mA V V 5 13 7 5.0 1.3 9.5 V V DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF Switching times (32 kHz line deflection circuit) ICsat = 8.0 A; LC = 260 µH; Cfb = 13 nF; IB(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V; (-dIB/dt = 1.6 A/µs) 3.0 0.2 4.0 0.35 µs µs ts tf Turn-off storage time Turn-off fall time IC / mA + 50v 100-200R 250 Horizontal 200 Oscilloscope 100 Vertical 100R 1R 0 6V VCE / V 30-60 Hz min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor ICsat TRANSISTOR IC BU2525AW 100 hFE BU2525A DIODE Tj = 25 C 5V t Tj = 125 C IBend IB 10 t 10us 1V 13us 32us VCE 1 1 0.1 100 10 IC / A t Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE ICsat 1.2 90 % VBESAT / V 1.1 IC BU2525A Tj = 25 C Tj = 125 C 1 0.9 10 % 0.8 tf t ts 0.7 IBend 0.6 IC/IB= IB 3 4 0.5 t 5 0.4 0.1 1 IC / A - IBM Fig.4. Switching times definitions. 10 Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB + 150 v nominal adjust for ICsat 1 VCESAT / V BU2525A IC/IB = 0.9 5 0.8 4 0.7 Lc 3 0.6 0.5 Tj = 25 C 0.4 IBend LB Tj = 125 C 0.3 T.U.T. Cfb 0.2 0.1 -VBB 0 0.1 10 1 100 IC / A Fig.5. Switching times test circuit (BU2525A). September 1997 Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor VBESAT / V 1.2 BU2525AW BU2525A Tj = 125 C 1.1 1 0.9 IC= 0.8 8A 6A 5A 4A 0.7 0.6 0 1 2 IB / A 3 VCESAT / V BU2525A 32 kHz ts IC = 8A 7A 0.1 4 tf 1 IB / A 10 Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC 10 ts, tf / us 12 11 10 9 8 7 6 5 4 3 2 1 0 Tj = 25 C BU2525A 110 Tj = 125 C 100 90 Normalised Power Derating PD% 120 Tj = 25 C 80 70 8A 60 50 1 6A 40 5A 30 IC = 4 A 20 10 0 0.1 0.1 1 IB / A 0 10 Fig.10. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC 1000 Eoff / uJ 20 40 60 80 100 Tmb / C 120 140 Fig.13. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) BU2525A 10 Zth / (K/W) BU2525A IC = 8 A 1 0.5 7A 100 0.1 0.2 0.1 0.05 0.02 PD 0.01 D=0 0.001 1E-06 10 0.1 1 IB / A 10 D= t T 1E-04 1E-02 t/s tp T 1E+00 Fig.14. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Fig.11. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC; f = 32 kHz September 1997 tp 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor IC / A BU2525AW BU2525A 100 tp = = 0.01 ICM 40 us ICDC 10 100 us Ptot 1 1 ms 10 ms 0.1 DC 0.01 1 10 100 1000 VCE / V Fig.15. Forward bias safe operating area. Tmb = 25 ˚C ICDC & ICM = f(VCE); ICM single pulse; parameter tp; Second-breakdown limits independant of temperature. September 1997 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.16. SOT429; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". September 1997 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AW DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Rev 1.100