ETC PDTA143XEF

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PDTA143XEF
PNP resistor-equipped transistor;
R1 = 4.7 kΩ, R2 = 10 kΩ
Product specification
2002 Mar 14
Philips Semiconductors
Product specification
PNP resistor-equipped transistor;
R1 = 4.7 kΩ, R2 = 10 kΩ
PDTA143XEF
FEATURES
QUICK REFERENCE DATA
• Built-in bias resistors
SYMBOL
• 250 mW total power dissipation
VCEO
collector-emitter voltage
−50
V
IO
output current (DC)
−100
mA
• Flat leads
R1
bias resistor
4.7
kΩ
• Excellent coplanarity
R2
bias resistor
10
kΩ
• Very small 1.6 × 0.85 × 0.7 mm package
PARAMETER
MAX.
UNIT
• Improved thermal behaviour
PINNING
• Reduces number of components and required PCB
area.
PIN
APPLICATIONS
• General purpose switching and amplification
DESCRIPTION
1
base/input
2
emitter/ground (+)
3
collector/output
• Inverter and interface circuits
• Driver circuits.
handbook, halfpage
DESCRIPTION
3
3
R1
1
PNP resistor-equipped transistor in a SOT490 (SC-89)
plastic package.
R2
1
MARKING
TYPE NUMBER
PDTA143XEF
Top view
MARKING CODE
2
2
MAM413
Fig.1 Simplified outline (SOT490) and symbol.
41
1
3
2
MGA893 - 1
Fig.2 Equivalent inverter symbol.
2002 Mar 14
2
Philips Semiconductors
Product specification
PNP resistor-equipped transistor;
R1 = 4.7 kΩ, R2 = 10 kΩ
PDTA143XEF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−50
V
VEBO
emitter-base voltage
open collector
−
−10
V
Vi
input voltage
positive
−
+7
V
negative
−
−20
V
IO
output current (DC)
−
−100
mA
ICM
peak collector current
−
−100
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT490 in the SC18 Data Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
500
K/W
in free air; note 1
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT490 in the SC18 Data Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = −50 V; IE = 0
−
−
−100
nA
ICEO
collector-emitter cut-off current
VCE = −30 V; IB = 0
−
−
−1
µA
VCE = −30 V; IB = 0; Tj = 150 °C
−
−
−50
µA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0
−
−
−0.6
mA
hFE
DC current gain
VCE = −5 V; IC = −10 mA
50
−
−
VCEsat
collector-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
−
−
−150
mV
Vi(off)
input off voltage
VCE = −5 V; IC = −100 µA
−
−
−0.3
V
Vi(on)
input on voltage
VCE = −0.3 V; IC = −20 mA
−2.5
−
−
V
kΩ
R1
input resistor
3.3
4.7
6.1
R2
-------R1
resistor ratio
1.7
2.1
2.6
Cc
collector capacitance
−
−
3
2002 Mar 14
IE = ie = 0; VCB = −10 V;
f = 1 MHz
3
pF
Philips Semiconductors
Product specification
PNP resistor-equipped transistor;
R1 = 4.7 kΩ, R2 = 10 kΩ
PDTA143XEF
MGR818
103
handbook, halfpage
MGR821
−103
handbook, halfpage
hFE
(2)
VCEsat
(1)
(mV)
102
(3)
−102
(1)
(3)
10
(2)
1
−10−1
−1
−10
IC (mA)
−10
−1
−102
−10
VCE = −5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
MGR819
−2
Collector-emitter saturation voltage as a
function of collector current; typical values.
MGR820
−10
handbook, halfpage
−102
IC (mA)
handbook, halfpage
Vi(on)
Vi(off)
(V)
(V)
−1.6
−8
−1.2
−6
(1)
(2)
−0.8
−4
(3)
−0.4
(1)
−2
(3)
(2)
0
−10−2
−10−1
−1
IC (mA)
0
−10−1
−10
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
VCE = −0.3 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.5
Fig.6
Input-off voltage as a function of collector
current; typical values.
2002 Mar 14
4
−1
−10
IC (mA)
−102
Input-on voltage as a function of collector
current; typical values.
Philips Semiconductors
Product specification
PNP resistor-equipped transistor;
R1 = 4.7 kΩ, R2 = 10 kΩ
PDTA143XEF
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT490
D
E
B
A
X
HE
v M A
3
A
1
c
2
e1
bp
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
v
w
mm
0.8
0.6
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
1.0
0.5
1.7
1.5
0.5
0.3
0.1
0.1
OUTLINE
VERSION
SOT490
2002 Mar 14
REFERENCES
IEC
JEDEC
EIAJ
SC-89
5
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
Philips Semiconductors
Product specification
PNP resistor-equipped transistor;
R1 = 4.7 kΩ, R2 = 10 kΩ
PDTA143XEF
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Mar 14
6
Philips Semiconductors
Product specification
PNP resistor-equipped transistor;
R1 = 4.7 kΩ, R2 = 10 kΩ
PDTA143XEF
NOTES
2002 Mar 14
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA74
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp8
Date of release: 2002
Mar 14
Document order number:
9397 750 09369