DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PBSS2515YPN 15 V low VCEsat NPN/PNP transistor Product specification Supersedes data of 2001 Jul 24 2002 May 08 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor FEATURES PBSS2515YPN QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capability VCEO collector-emitter voltage 15 V ICM peak collector current 1 A RCEsat equivalent on-resistance <500 mΩ • Replaces two SC-70 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. PARAMETER MAX. UNIT PINNING PIN APPLICATION • General purpose switching and muting • Low frequency driver circuits • LCD backlighting DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). 6 handbook, halfpage 5 6 4 5 4 TR2 TR1 DESCRIPTION NPN/PNP low VCEsat transistor pair in a SC-88 plastic package. 1 Top view 2 3 1 2 3 MAM445 MARKING TYPE NUMBER PBSS2515YPN 2002 May 08 Fig.1 MARKING CODE N8t 2 Simplified outline SC-88 (SOT363) and symbol. Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515YPN LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 15 VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 100 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature 65 +150 °C − 300 mW Tamb ≤ 25 °C V Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2002 May 08 3 VALUE UNIT 416 K/W Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515YPN CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity − collector-base cut-off current VCB = 15 V; IE = 0; Tj = 150 °C − − 50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 2 V; IC = 10 mA 200 − − VCE = 2 V; IC = 100 mA; note 1 150 − − VCEsat collector-emitter saturation voltage VCB = 15 V; IE = 0 − ICBO 100 nA VCE = 2 V; IC = 500 mA; note 1 90 − − IC = 10 mA; IB = 0.5 mA − − 25 mV IC = 200 mA; IB = 10 mA − − 150 mV IC = 500 mA; IB = 50 mA; note 1 − − 250 mV RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 − 300 <500 mΩ VBEsat base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 − − 1.1 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 100 mA; note 1 − − 0.9 V NPN transistor fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 250 420 − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − 4.4 6 pF PNP transistor fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 100 280 − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 10 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2002 May 08 4 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515YPN MLD687 600 MLD689 1200 VBE handbook, halfpage handbook, halfpage (1) (mV) hFE 1000 (1) 400 800 (2) (2) 600 200 (3) (3) 400 0 10−1 1 10 102 IC (mA) 200 10−1 103 1 TR1 (NPN) VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN) VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MLD691 103 handbook, halfpage 10 102 IC (mA) 103 Base-emitter voltage as a function of collector current; typical values. MLD690 1200 handbook, halfpage VBEsat VCEsat (mV) (mV) 1000 (1) 102 800 (1) (2) 600 (2) (3) 10 (3) 400 1 10−1 1 10 102 IC (mA) 200 10−1 103 1 TR1 (NPN) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2002 May 08 5 10 102 IC (mA) 103 Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515YPN MLD692 102 handbook, halfpage MLD688 1200 handbook, halfpage RCEsat (Ω) IC (mA) 10 800 (3) (4) (2) (1) (5) (6) (1) (7) (2) (8) (3) 1 400 (9) (10) 10−1 10−1 1 10 102 IC (mA) 0 103 2 0 4 6 8 10 VCE (V) TR1 (NPN) Tamb = 25 °C. TR1 (NPN) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) (2) (3) (4) (5) Fig.6 Fig.7 Equivalent on-resistance as a function of collector current; typical values. 2002 May 08 6 IB = 4.6 mA. IB = 4.14 mA. IB = 3.68 mA. IB = 3.22 mA. IB = 2.76 mA. (6) IB = 2.3 mA. (7) IB = 1.84 mA. (8) IB = 1.38 mA. (9) IB = 0.92 mA. (10) IB = 0.46 mA. Collector current as a function of collector-emitter voltage; typical values. Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515YPN MLD693 600 MLD695 −1200 VBE handbook, halfpage handbook, halfpage hFE (mV) (1) −1000 (1) 400 −800 (2) (2) −600 200 (3) (3) −400 0 −10−1 −1 −10 −200 −10−1 −102 −103 IC (mA) −1 TR2 (PNP) VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP) VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Fig.9 DC current gain as a function of collector current; typical values. MLD697 −103 handbook, halfpage −10 −102 −103 IC (mA) Base-emitter voltage as a function of collector current; typical values. MLD696 −1200 handbook, halfpage VBEsat VCEsat (mV) (mV) −1000 (1) −102 −800 (2) −600 (3) −10 (2) (1) (3) −400 −1 −10−1 −1 −10 −102 IC (mA) −200 −10−1 −103 −1 −10 −102 −103 IC (mA) TR2 (PNP) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. 2002 May 08 7 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515YPN MLD698 103 handbook, halfpage MLD694 −1200 handbook, halfpage RCEsat (3) (4) IC (mA) (Ω) (2) (1) 102 (5) −800 (6) (7) 10 (8) −400 1 (1) (2) 10−1 −10−1 (9) −1 −10 (10) (3) −102 0 −103 IC (mA) 0 −2 −4 −6 −8 −10 VCE (V) TR2 (PNP) Tamb = 25 °C. IB = −7 mA. IB = −6.3 mA. IB = −5.6 mA. IB = −4.9 mA. IB = −4.2 mA. (6) IB = −3.5 mA. (7) IB = −2.8 mA. (8) IB = −2.1 mA. (9) IB = −1.4 mA. (10) IB = −0.7 mA. TR2 (PNP) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) (2) (3) (4) (5) Fig.12 Equivalent on-resistance as a function of collector current; typical values. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2002 May 08 8 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515YPN PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2002 May 08 REFERENCES IEC JEDEC EIAJ SC-88 9 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515YPN DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 May 08 10 Philips Semiconductors Product specification 15 V low VCEsat NPN/PNP transistor PBSS2515YPN NOTES 2002 May 08 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp12 Date of release: 2002 May 08 Document order number: 9397 750 09643