DISCRETE SEMICONDUCTORS DATA SHEET page M3D087 PBYR2150CT Schottky barrier double diode Preliminary specification 1996 Oct 14 Philips Semiconductors Preliminary specification Schottky barrier double diode PBYR2150CT FEATURES DESCRIPTION • Low switching losses The PBYR2150CT is a Schottky barrier double diode, fabricated in planar technology, and encapsulated in a SOT223 plastic SMD package. • Low forward voltage • High breakdown voltage • Fast recovery time • Guard ring protected • Plastic SMD package. 4 4 APPLICATIONS • Low power, switched-mode power supplies 1 3 • Rectification 2 • Polarity protection. 1 PINNING PIN 2 3 MAM086 Top view DESCRIPTION 1 anode (a1) 2 common cathode 3 anode (a2) 4 common cathode Marking code: BYR215. Fig.1 Simplified outline (SOT223), pin configuration and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 150 V VRRM repetitive peak reverse voltage − 150 V VRWM crest working reverse voltage − 150 V IF(AV) average forward current − 1 A IFSM non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method − 10 A 1996 Oct 14 Tamb = 85 °C; Rth j-a = 70 K/W; note 1; VR(equiv) = 0.2 V; note 2 2 Philips Semiconductors Preliminary specification Schottky barrier double diode SYMBOL PBYR2150CT PARAMETER CONDITIONS MIN. MAX. UNIT Per diode Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Tamb operating ambient temperature − 80 °C Notes 1. Refer to SOT223 standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF IR Cd forward voltage see Fig.2 reverse current diode capacitance IF = 0.1 A; note 1 400 mV IF = 0.5 A; note 1 650 mV IF = 1 A; note 1 850 mV IF = 1 A; Tj = 100 °C; note 1 690 mV VR = VRRMmax; note 1; see Fig.3 1 mA VR = VRRMmax; Tj = 100 °C; note 1; see Fig.3 10 mA VR = 4 V; f = 1 MHz; see Fig.4 100 pF Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOT223 standard mounting conditions. 1996 Oct 14 3 VALUE UNIT 70 K/W Philips Semiconductors Preliminary specification Schottky barrier double diode PBYR2150CT GRAPHICAL DATA F (A) MGD767 10−2 handbook, halfpage MGD766 10 handbook, I halfpage IR (A) 1 (4) 10−3 10−1 (3) 10−2 (4) (3) (2) (1) 10−3 10−4 10−4 (2) 10−5 (1) 10−5 10−6 (1) (2) (3) (4) 10−6 0 0.2 0.4 0.6 VF (V) 0.8 Tamb = 25 °C. Tamb = 60 °C. Tamb = 80 °C. Tamb = 100 °C. Fig.2 (1) (2) (3) (4) Forward current as a function of forward voltage; typical values. MGD768 250 Cd (pF) 200 150 100 50 0 50 0 VR (V) 100 f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 Oct 14 4 50 100 VR (V) 150 Tamb = 25 °C. Tamb = 60 °C. Tamb = 80 °C. Tamb = 100 °C. Fig.3 handbook, halfpage 0 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Preliminary specification Schottky barrier double diode PBYR2150CT PACKAGE OUTLINE 0.95 0.85 handbook, full pagewidth S 0.1 S seating plane 0.32 0.24 6.7 6.3 3.1 2.9 B 4 A 0.10 0.01 16 o max 16 3.7 3.3 7.3 6.7 o 1 2 o 1.80 max 0.2 M A 10 max 0.80 0.60 2.3 4.6 3 0.1 M B (4x) MSA035 - 1 Dimensions in mm. Fig.5 SOT223. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 14 5