ATMEL T0816M-TCQG

Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Current-controlled Output Current Source, 3 Input Channels
Low-power Consumption
Output Current per Channel to 250 mA
Total Output Current to 300 mA
Rise Time 1.0 ns, Fall Time 1.1 ns
On-chip RF Oscillator
Control of Frequency and Swing by Use of 2 External Resistors
Oscillator Frequency Range from 200 MHz to 500 MHz
Oscillator Swing to 100 mA
Single 5 V Power Supply
Common Enable, Disable Input
TTL/CMOS Control Signals
Small SSO16 Package and QFN16 Package
3-Channel Laser
Driver with RF
Oscillator
Applications
• CD-RW Drives
• Writable Optical Drives
T0816
Description
The T0816 is a laser diode driver for the operation of a grounded laser diode for
CD-RW drives. It includes three channels for three different optical power levels which
are controlled by a separate IC. The read channel generates a continuous output level
whereas channels 2 and 3 are provided as write channels with very fast switching
speeds. Write current pulses are enabled when a ‘low’ signal is applied to the NE pins.
All channels are summed together at the IOUT pin. Each channel can contribute up to
250 mA to the total output current of up to 300 mA. A total gain of 100 (read channel),
250 (channel 2) and 150 (channel 3) are provided between each reference current
input and the output. Although the reference inputs are current inputs voltage control
is possible by using external resistors.
An on-chip RF oscillator is provided to reduce laser mode hopping noise during read
mode. Frequency and swing can be set by two external resistors. Oscillation is
enabled by a ‘high’ at the ENOSC pin. Complete output current and oscillator switchoff is achieved by a ‘low’ at the ENABLE input.
Figure 1. Block Diagram
I3
NE3
Channel 3
I2
NE2
Channel 2
IOUT
IR
NER
ENABLE
ENOSC
Read channel
RF oscillator
RF
RS
Rev. 4505G–DVD–09/03
Pin Configuration
Figure 2. Pinning SSO16
IR
I2
GND
RF
I3
NER
NE2
NE3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC1
VCC2
IOUT
GND
RS
ENABLE
ENOSC
VCC2
Pin Description: SSOP16
2
Pin
Symbol
Type
Function
1
IR
Analog
Input current, bias voltage approximately GND
2
I2
Analog
Input current, bias voltage approximately GND
3
GND
Supply
Ground
4
RF
Analog
External resistor to GND sets oscillator frequency
5
I3
Analog
Input current, bias voltage approximately GND
6
NER
Digital
Digital control of read channel (low active)
7
NE2
Digital
Digital control of channel 2 (low active)
8
NE3
Digital
Digital control of channel 3 (low active)
9
VCC2
Supply
+5 V power supply for IOUT
10
ENOSC
Digital
Enables RF oscillator (high active)
11
ENABLE
Digital
Enables output current (high active)
12
RS
Analog
External resistor to GND sets oscillator swing
13
GND
Supply
Ground
14
IOUT
Analog
Output current source for laser diode
15
VCC2
Supply
+5 V power supply for IOUT
16
VCC1
Supply
+5 V power supply for circuit
T0816
4505G–DVD–09/03
T0816
I2
IR
VCC1
VCC2
Figure 3. Pinning QFN16
1
2
3
4
16 15 14 13
12
11
10
9
5 6 7 8
IOUT
IOUT
RS
ENABLE
NE2
NE3
VCC2
ENOSC
NC
RF
I3
NER
Pin Description: QFN16
Pin
Symbol
Type
Function
1
NC
–
2
RF
Analog
External resistor to GND sets frequency of oscillator A
3
I3
Analog
Input current, bias voltage approximately GND
4
NER
Digital
Digital control of R channel (low active)
5
NE2
Digital
Digital control of channel 2 (low active)
6
NE3
Digital
Digital control of channel 3 (low active)
7
VCC2
Supply
+5 V power supply for IOUT
8
ENOSC
Digital
Enables RF oscillator (high active)
9
ENABLE
Digital
Enables output current (high active)
10
RS
Analog
External resistor to GND sets oscillator swing
11,12
IOUT
Analog
Output current source for laser diode
13
VCC2
Supply
+5 V power supply for IOUT
14
VCC1
Supply
+5 V power supply for circuit
15
IR
Analog
Input current, bias voltage approximately GND
16
I2
Analog
Input current, bias voltage approximately GND
Paddle
GND
Supply
Ground
Not connected
3
4505G–DVD–09/03
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
Value
Unit
Supply voltage
VCC
-0.5 to +6.0
V
Input voltage at IR, I2, I3
VIN1
-0.5 to + 2.0
V
Input voltage at NER, NE2, NE3, ENOSC
VIN2
-0.5 to VCC + 0.5
V
Output voltage
VOUT
-0.5 to VCC –1
V
Power dissipation
PMax
0.7 (1) to 1 (2)
W
TJ
150
°C
TStg
-65 to +125
°C
Symbol
Value
Unit
(1)
K/W
Symbol
Value
Unit
VCC
4.5 to 5.5
V
Input current
IIR
II2
II3
< 2.5
< 1.0
<1.7
mA
External resistor to GND to set oscillator
frequency
RF
>3
kW
External resistor to GND to set oscillator swing
RS
>1
kW
Operating temperature range
Tamb
0 to +70
°C
Junction temperature
Storage temperature range
Notes:
1. RthJA £ 115 K/W, Tamb = 70°C
2. RthJA £ 115 K/W, Tamb = 25°C
Thermal Resistance
Parameters
Junction ambient
Note:
RthJA
115
1. Measured with multi-layer test board (JEDEC standard)
Operating Range
Parameters
Supply voltage range
4
T0816
4505G–DVD–09/03
T0816
Electrical Characteristics: General
VCC = 5 V, Tamb =25°C, ENABLE = High, NER = Low, NE2 = NE3 = High, ENOSC = Low, unless otherwise specified
No.
1
Parameters
Test Conditions
Pin (1)
Symbol
Min.
Typ.
Max.
Unit
Type*
Power Supply
1.1
Supply current, power
down
ENABLE = Low,
NE2 = NE3 = Low
9; 15;
16
ICCPD2
0.3
mA
A
1.2
Supply current, read
mode, oscillator
disabled
IIR = 500 µA,
II2 = 200 µA,
II3 = 333 µA
9; 15;
16
ICCR1
86
mA
A
1.3
Supply current, read
mode, oscillator
enabled
IIR = 500 µA,
II2 = 200 µA,
II3 = 333 µA,
ENOSC = High,
RS = 7.5 kW,
RF = 7.5 kW
9; 15;
16
ICCR2
90
mA
A
1.4
Supply current, write
mode
IIR = 500 µA,
II2 = 200 µA,
II3 = 333 µA,
NE2 = NE3 = Low
9; 15;
16
ICCW
175
mA
A
1.5
Supply current, input
off
IIR = II2 = II3 = 0 µA
9; 15;
16
ICCoff
15
mA
A
V
A
V
A
V
A
V
A
V
A
2
Digital Inputs
2.1
NER/NE2/NE3 low
voltage
6, 7, 8
VNELO
2.2
NER/NE2/NE3 high
voltage
6, 7, 8
VNEHI
2.3
ENABLE low voltage
11
VENLO
2.4
ENABLE high voltage
11
VENHI
2.5
ENOSC low voltage
10
VEOLO
2.6
ENOSC high voltage
10
VEOHI
3.0
V
A
-300
µA
A
µA
A
µA
A
100
µA
A
µA
A
800
µA
A
3
1.3
2.0
0.5
2.7
0.5
Current at Digital Inputs
3.1
NER/NE2/NE3 low
current
NE = 0 V
6, 7, 8
INELO
3.2
NER/NE2/NE3 high
current
NE = 5 V
6, 7, 8
INEHI
3.3
ENABLE low current
ENABLE = 0 V
11
IENLO
3.4
ENABLE high current
ENABLE = 5 V
11
IENHI
3.5
ENOSC low current
ENOSC = 0 V
10
IEOLO
3.6
ENOSC high current
ENOSC = 5 V
10
IEOHI
800
-150
-100
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note:
1. Related to SSO16 package.
5
4505G–DVD–09/03
Electrical Characteristics: Laser Amplifier
VCC = 5 V, Tamb = 25°C, ENABLE = High, unless otherwise specified
No.
4
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
350
Max.
Unit
Type*
mA
A
mA
A
W
C
Output IOUT
4.1
Total output current
Output is sourcing
14
IOUT
300
4.2
Output current per
channel
Output is sourcing
14
IOUTR
250
4.5
IOUT series resistance
Total ROUT to VCC rail
14
ROUT
4.6
Best fit current gain
IR
Channel R(1)
14
GAINR
90
100
130
mA/mA
A
4.7
Best fit current gain I2
Channel 2(1)
14
GAIN2
225
250
325
mA/mA
A
Best fit current gain I3
(1)
150
195
mA/mA
A
4.8
Channel 3
6
14
GAIN3
135
(1)
14
IOS
-8
+4
mA
A
+3
%
A
4.9
Best fit current offset
Any channel
4.10
Output current
linearity
Any channel(1)
14
ILIN
-3
4.11
IIN input impedance
RIN,IR is to GND
1
RIN,IR
400
500
600
W
A
4.12
IIN input impedance
RIN,I2 is to GND
2
RIN,I2
1000
1250
1500
W
A
4.13
IIN input impedance
RIN,I3 is to GND
5
RIN,I3
600
750
900
W
A
4.14
NE threshold
Temperature
stabilized
6, 7, 8
VTH
V
B
4.15
Output off current 1
ENABLE = Low
14
IOFF1
1
mA
A
4.16
Output off current 2
NE2 = NE3 = High,
IIR = 0,
II2 = 200 µA,
II3 = 333 µA
14
IOFF2
1
mA
A
4.17
Output off current 3
NE2 = NE3 = Low,
IIR = II2 = II3 = 0 µA
14
IOFF3
5
mA
A
4.18
IOUT supply sensitivity,
read mode
IOUT = 40 mA,
VCC = 5 V ± 10%,
read only
14
VSER
-4
1
%/V
A
4.19
IOUT supply sensitivity,
write mode
IOUT = 80 mA, 40 mA
read + 40 mA write,
VCC = 5 V ± 10%
14
VSEW
-6
0
%/V
A
4.20
IOUT current output
noise
IOUT = 40 mA,
ENOSC = Low
14
INOO
3
nA/
rt-Hz
C
4.21
IOUT temperature
sensitivity,
read mode
IOUT = 40 mA, read
only
14
TSER
-400
ppm/°C
C
4.22
IOUT temperature
sensitivity, write mode
IOUT = 80 mA, 40 mA
read + 40 mA write
14
TSEW
-400
ppm/°C
C
1.68
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note:
1. Linearity of the amplifier is calculated using a best fit method at three operating points of IOUT at 20 mA, 40 mA,
and 60 mA. IOUT = (IIN ´ GAIN) + IOS
6
T0816
4505G–DVD–09/03
T0816
Electrical Characteristics: Laser Current Amplifier Outputs AC Performance
VCC = + 5 V, IOUT = 40 mA DC with 40 mA pulse, Tamb = 25°C unless otherwise specified
No.
5
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Output AC Performance
5.1
Write rise time
IOUT = 40 mA (read) +
40 mA (10 to 90%)(1)
14
tRISE
1.0
2.0
ns
C
5.2
Write fall time
IOUT = 40 mA (read) +
40 mA (10 to 90%)(1)
14
tFALL
1.1
2.0
ns
C
5.3
Output current
overshoot
IOUT = 40 mA (read) +
40 mA(1)
14
OS
5
%
C
5.4
IOUT ON propagation
delay
NE 50% High-Low to
IOUT at 50% of final
value
14
tON
2
ns
C
5.5
IOUT OFF propagation
delay
NE 50% Low-High to
IOUT at 50% of final
value
14
tOFF
2
ns
C
5.6
Disable time
ENABLE 50% HighLow to IOUT at 50% of
final value
14
tDIS
20
ns
C
5.7
Enable time
ENABLE 50% LowHigh to IOUT at 50% of
final value
14
tEN
20
ns
C
5.8
Amplifier bandwidth
IOUT = 50 mA, all
channels, -3 dB value
14
BWLCA
16
MHz
C
MHz
A
6
Oscillator
6.1
Oscillator frequency
RF = 7.5 kW
14
FOSC
270
300
330
6.2
Osc. temperature
coefficient
RF = 7.5 kW
14
TCOSC
-150
ppm/°C
C
6.3
Disable time oscillator
ENOSC 50% HighLow to IOUT at 50% of
final value
14
TDISO
4
ns
C
6.4
Enable time oscillator
ENOSC 50% LowHigh to IOUT at 50% of
final value
14
TENO
2
ns
C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Note:
1. Load resistor at IOUT 6.8 W, measurement with 50-W oscilloscope and 39-W series resistor.
7
4505G–DVD–09/03
Characteristic Curves
Figure 4. Oscillator Frequency versus Resistor RF (RS = 7.5 kW)
550.0
Frequency (MHz)
500.0
450.0
400.0
350.0
+10%
300.0
-10%
250.0
200.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
RF(KW)
Figure 5. Oscillator Swing versus Resistor RS (RF = 7.5 kW)
120
Swing ( mA pk/pk )
100
80
60
40
20
0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
RS ( kOhm )
Figure 6. Oscillator Frequency Dependency of Swing
60
Swing ( mA pk/pk )
50
40
30
20
10
0
200.0
250.0
300.0
350.0
400.0
450.0
500.0
Frequency ( MHz )
8
T0816
4505G–DVD–09/03
T0816
Figure 7. Transfer Characteristic of Channel 2
(Gain = 278, Load Resistor at IOUT = 6.8 W)
400
y = 0.2783x - 3.3199
350
IOUT (mA)
300
Vcc = 5.5 V
Vcc = 5.0 V
Vcc = 4.5 V
250
200
150
100
50
0
0
200
400
600
800
1000
1200
1400
1600
Iin (µA)
Figure 8. Voltage Compliance R (IOUT to VCC) = 5.9 W
350
300
IOUT ( mA )
250
200
150
100
50
0
0.0
1.0
2.0
3.0
4.0
5.0
VCC-V(IOUT)/V
9
4505G–DVD–09/03
Figure 9. Step Response, Read Channel: 50 mA, Channel 2: 50 mApp
Figure 10. Step Response, Read Channel: 50 mA, Channel 2: 250 mApp
10
T0816
4505G–DVD–09/03
T0816
Figure 11. Timing Diagram of IOUT
ENABLE
NER
NE2
NE3
tON
tOFF
tON
tOFF
tEN
tr
t DIS
tf
tr
tf
Figure 12. Application Circuit
A
n
a
l
o
g
__
D
i
g
i
t
a
l
VCC
IR
I2
GND
RF
I3
NER
NE2
NE3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC1
VCC2
IOUT
GND
RS
ENABLE
ENOSC
VCC2
LD
VCC
11
4505G–DVD–09/03
Ordering Information
Extended Type Number
T0816-TCQ
Package
Remarks
SSO16
Taped and reeled
T0816M-TCQG
Pb-free SSO16
Taped and reeled
T0816-PEQG
Pb-free QFN16
Taped and reeled
Package Information
12
T0816
4505G–DVD–09/03
T0816
13
4505G–DVD–09/03
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4505G–DVD–09/03