Features • • • • • • • • • • • • • Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output Current per Channel to 250 mA Total Output Current to 300 mA Rise Time 1.0 ns, Fall Time 1.1 ns On-chip RF Oscillator Control of Frequency and Swing by Use of 2 External Resistors Oscillator Frequency Range from 200 MHz to 500 MHz Oscillator Swing to 100 mA Single 5V Power Supply Common Enable, Disable Input TTL/CMOS Control Signals Small SSO16 Package and QFN16 Package 3-channel Laser Driver with RF Oscillator T0816 Applications • CD-RW Drives • Writable Optical Drives 1. Description The T0816 is a laser diode driver for the operation of a grounded laser diode for CD-RW drives. It includes three channels for three different optical power levels which are controlled by a separate IC. The read channel generates a continuous output level whereas channels 2 and 3 are provided as write channels with very fast switching speeds. Write current pulses are enabled when a ‘low’ signal is applied to the NE pins. All channels are summed together at the IOUT pin. Each channel can contribute up to 250 mA to the total output current of up to 300 mA. A total gain of 100 (read channel), 250 (channel 2) and 150 (channel 3) are provided between each reference current input and the output. Although the reference inputs are current inputs voltage control is possible by using external resistors. An on-chip RF oscillator is provided to reduce laser mode hopping noise during read mode. Frequency and swing can be set by two external resistors. Oscillation is enabled by a ‘high’ at the ENOSC pin. Complete output current and oscillator switchoff is achieved by a ‘low’ at the ENABLE input. Rev. 4505H–DVD–11/05 Figure 1-1. Block Diagram I3 NE3 Channel 3 I2 NE2 Channel 2 IOUT IR NER ENABLE ENOSC Read channel RF oscillator RF 2 RS T0816 4505H–DVD–11/05 T0816 2. Pin Configuration Figure 2-1. Pinning SSO16 IR I2 GND RF I3 NER NE2 NE3 Table 2-1. 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC1 VCC2 IOUT GND RS ENABLE ENOSC VCC2 Pin Description: SSOP16 Pin Symbol Type Function 1 IR Analog Input current, bias voltage approximately GND 2 I2 Analog Input current, bias voltage approximately GND 3 GND Supply Ground 4 RF Analog External resistor to GND sets oscillator frequency 5 I3 Analog Input current, bias voltage approximately GND 6 NER Digital Digital control of read channel (low active) 7 NE2 Digital Digital control of channel 2 (low active) 8 NE3 Digital Digital control of channel 3 (low active) 9 VCC2 Supply +5V power supply for IOUT 10 ENOSC Digital Enables RF oscillator (high active) 11 ENABLE Digital Enables output current (high active) 12 RS Analog External resistor to GND sets oscillator swing 13 GND Supply Ground 14 IOUT Analog Output current source for laser diode 15 VCC2 Supply +5V power supply for IOUT 16 VCC1 Supply +5V power supply for circuit 3 4505H–DVD–11/05 Pinning QFN16 I2 IR VCC1 VCC2 Figure 2-2. 1 2 3 4 16 15 14 13 12 11 10 9 5 6 7 8 IOUT IOUT RS ENABLE NE2 NE3 VCC2 ENOSC NC RF I3 NER Table 2-2. 4 Pin Description: QFN16 Pin Symbol Type Function 1 NC – 2 RF Analog External resistor to GND sets frequency of oscillator A 3 I3 Analog Input current, bias voltage approximately GND 4 NER Digital Digital control of R channel (low active) 5 NE2 Digital Digital control of channel 2 (low active) 6 NE3 Digital Digital control of channel 3 (low active) 7 VCC2 Supply +5V power supply for IOUT 8 ENOSC Digital Enables RF oscillator (high active) Not connected 9 ENABLE Digital Enables output current (high active) 10 RS Analog External resistor to GND sets oscillator swing 11,12 IOUT Analog Output current source for laser diode 13 VCC2 Supply +5V power supply for IOUT 14 VCC1 Supply +5V power supply for circuit 15 IR Analog Input current, bias voltage approximately GND 16 I2 Analog Input current, bias voltage approximately GND Paddle GND Supply Ground T0816 4505H–DVD–11/05 T0816 3. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage VCC –0.5 to +6.0 V Input voltage at IR, I2, I3 VIN1 –0.5 to + 2.0 V Input voltage at NER, NE2, NE3, ENOSC VIN2 –0.5 to VCC + 0.5 V Output voltage VOUT –0.5 to VCC –1 V Power dissipation PMax 0.7(1) to 1(2) W TJ 150 °C TStg –65 to +125 °C Symbol Value Unit (1) K/W Symbol Value Unit VCC 4.5 to 5.5 V Input current IIR II2 II3 < 2.5 < 1.0 <1.7 mA External resistor to GND to set oscillator frequency RF >3 kΩ External resistor to GND to set oscillator swing RS >1 kΩ Operating temperature range Tamb 0 to +70 °C Junction temperature Storage temperature range Notes: 1. RthJA ≤ 115 K/W, Tamb = 70°C 2. RthJA ≤ 115 K/W, Tamb = 25°C 4. Thermal Resistance Parameters Junction ambient Note: RthJA 115 1. Measured with multi-layer test board (JEDEC standard) 5. Operating Range Parameters Supply voltage range 5 4505H–DVD–11/05 6. Electrical Characteristics: General VCC = 5V, Tamb = 25°C, ENABLE = High, NER = Low, NE2 = NE3 = High, ENOSC = Low, unless otherwise specified No. 1 Parameters Test Conditions Pin (1) Symbol Min. Typ. Max. Unit Type* Power Supply 1.1 Supply current, power down ENABLE = Low, NE2 = NE3 = Low 9; 15; 16 ICCPD2 0.3 mA A 1.2 Supply current, read mode, oscillator disabled IIR = 500 µA, II2 = 200 µA, II3 = 333 µA 9; 15; 16 ICCR1 86 mA A 1.3 Supply current, read mode, oscillator enabled IIR = 500 µA, II2 = 200 µA, II3 = 333 µA, ENOSC = High, RS = 7.5 kΩ, RF = 7.5 kΩ 9; 15; 16 ICCR2 90 mA A 1.4 Supply current, write mode IIR = 500 µA, II2 = 200 µA, II3 = 333 µA, NE2 = NE3 = Low 9; 15; 16 ICCW 175 mA A 1.5 Supply current, input off IIR = II2 = II3 = 0 µA 9; 15; 16 ICCoff 15 mA A V A V A V A V A 2 Digital Inputs 2.1 NER/NE2/NE3 low voltage 6, 7, 8 VNELO 2.2 NER/NE2/NE3 high voltage 6, 7, 8 VNEHI 2.3 ENABLE low voltage 11 VENLO 2.4 ENABLE high voltage 11 VENHI 1.3 2.0 0.5 2.7 2.5 ENOSC low voltage 10 VEOLO V A 2.6 ENOSC high voltage 10 VEOHI 3.0 V A –300 µA A µA A µA A µA A µA A µA A 3 0.5 Current at Digital Inputs 3.1 NER/NE2/NE3 low current NE = 0V 6, 7, 8 INELO 3.2 NER/NE2/NE3 high current NE = 5V 6, 7, 8 INEHI 3.3 ENABLE low current ENABLE = 0V 11 IENLO 3.4 ENABLE high current ENABLE = 5V 11 IENHI 3.5 ENOSC low current ENOSC = 0V 10 IEOLO 3.6 ENOSC high current ENOSC = 5V 10 IEOHI 800 –150 100 –100 800 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 6 1. Related to SSO16 package. T0816 4505H–DVD–11/05 T0816 7. Electrical Characteristics: Laser Amplifier VCC = 5V, Tamb = 25°C, ENABLE = High, unless otherwise specified No. Parameters 4 Output IOUT Test Conditions Pin Symbol Min. Typ. 350 Max. Unit Type* mA A mA A Ω C 4.1 Total output current Output is sourcing 14 IOUT 300 4.2 Output current per channel Output is sourcing 14 IOUTR 250 4.5 IOUT series resistance Total ROUT to VCC rail 14 ROUT 4.6 Best fit current gain IR Channel R(1) 14 GAINR 90 100 130 mA/mA A 4.7 Best fit current gain I2 Channel 2(1) 14 GAIN2 225 250 325 mA/mA A Best fit current gain I3 (1) 150 195 mA/mA A 4.8 Channel 3 6 14 GAIN3 135 (1) 14 IOS –8 +4 mA A +3 % A Ω A 4.9 Best fit current offset Any channel 4.10 Output current linearity Any channel(1) 14 ILIN –3 4.11 IIN input impedance RIN,IR is to GND 1 RIN,IR 400 500 600 4.12 IIN input impedance RIN,I2 is to GND 2 RIN,I2 1000 1250 1500 Ω A 4.13 IIN input impedance RIN,I3 is to GND 5 RIN,I3 600 750 900 Ω A 4.14 NE threshold Temperature stabilized 6, 7, 8 VTH V B 4.15 Output off current 1 ENABLE = Low 14 IOFF1 1 mA A 4.16 Output off current 2 NE2 = NE3 = High, IIR = 0, II2 = 200 µA, II3 = 333 µA 14 IOFF2 1 mA A 4.17 Output off current 3 NE2 = NE3 = Low, IIR = II2 = II3 = 0 µA 14 IOFF3 5 mA A 4.18 IOUT supply sensitivity, read mode IOUT = 40 mA, VCC = 5V ±10%, read only 14 VSER –4 1 %/V A 4.19 IOUT supply sensitivity, write mode IOUT = 80 mA, 40 mA read + 40 mA write, VCC = 5V ±10% 14 VSEW –6 0 %/V A 4.20 IOUT current output noise IOUT = 40 mA, ENOSC = Low 14 INOO 3 nA/ rt-Hz C 4.21 IOUT temperature sensitivity, read mode IOUT = 40 mA, read only 14 TSER –400 ppm/°C C 4.22 IOUT temperature sensitivity, write mode IOUT = 80 mA, 40 mA read + 40 mA write 14 TSEW –400 ppm/°C C 1.68 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Linearity of the amplifier is calculated using a best fit method at three operating points of IOUT at 20 mA, 40 mA, and 60 mA. IOUT = (IIN × GAIN) + IOS 7 4505H–DVD–11/05 8. Electrical Characteristics: Laser Current Amplifier Outputs AC Performance VCC = + 5V, IOUT = 40 mA DC with 40 mA pulse, Tamb = 25°C unless otherwise specified No. 5 Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Output AC Performance 5.1 Write rise time IOUT = 40 mA (read) + 40 mA (10 to 90%)(1) 14 tRISE 1.0 2.0 ns C 5.2 Write fall time IOUT = 40 mA (read) + 40 mA (10 to 90%)(1) 14 tFALL 1.1 2.0 ns C 5.3 Output current overshoot IOUT = 40 mA (read) + 40 mA(1) 14 OS 5 % C 5.4 IOUT ON propagation delay NE 50% High-Low to IOUT at 50% of final value 14 tON 2 ns C 5.5 IOUT OFF propagation delay NE 50% Low-High to IOUT at 50% of final value 14 tOFF 2 ns C 5.6 Disable time ENABLE 50% High-Low to IOUT at 50% of final value 14 tDIS 20 ns C 5.7 Enable time ENABLE 50% Low-High to IOUT at 50% of final value 14 tEN 20 ns C 5.8 Amplifier bandwidth IOUT = 50 mA, all channels, –3 dB value 14 BWLCA 16 MHz C MHz A 6 Oscillator 6.1 Oscillator frequency RF = 7.5 kΩ 14 FOSC 270 300 330 6.2 Osc. temperature coefficient RF = 7.5 kΩ 14 TCOSC –150 ppm/°C C 6.3 Disable time oscillator ENOSC 50% HighLow to IOUT at 50% of final value 14 TDISO 4 ns C 6.4 Enable time oscillator ENOSC 50% LowHigh to IOUT at 50% of final value 14 TENO 2 ns C *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 8 1. Load resistor at IOUT 6.8 Ω, measurement with 50-Ω oscilloscope and 39-Ω series resistor. T0816 4505H–DVD–11/05 T0816 9. Characteristic Curves Figure 9-1. Oscillator Frequency versus Resistor RF (RS = 7.5 kΩ) 550.0 Frequency (MHz) 500.0 450.0 400.0 350.0 +10% 300.0 -10% 250.0 200.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 RF(KΩ) Figure 9-2. Oscillator Swing versus Resistor RS (RF = 7.5 kΩ) 120 Swing ( mA pk/pk ) 100 80 60 40 20 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 RS ( kOhm ) Figure 9-3. Oscillator Frequency Dependency of Swing 60 Swing ( mA pk/pk ) 50 40 30 20 10 0 200.0 250.0 300.0 350.0 400.0 450.0 500.0 Frequency ( MHz ) 9 4505H–DVD–11/05 Figure 9-4. Transfer Characteristic of Channel 2 (Gain = 278, Load Resistor at IOUT = 6.8Ω) 400 y = 0.2783x - 3.3199 350 IOUT (mA) 300 Vcc = 5.5 V Vcc = 5.0 V Vcc = 4.5 V 250 200 150 100 50 0 0 200 400 600 800 1000 1200 1400 1600 Iin (µA) Figure 9-5. Voltage Compliance R (IOUT to VCC) = 5.9Ω 350 300 IOUT ( mA ) 250 200 150 100 50 0 0.0 1.0 2.0 3.0 4.0 5.0 VCC-V(IOUT)/V 10 T0816 4505H–DVD–11/05 T0816 Figure 9-6. Step Response, Read Channel: 50 mA, Channel 2: 50 mApp Figure 9-7. Step Response, Read Channel: 50 mA, Channel 2: 250 mApp 11 4505H–DVD–11/05 Figure 9-8. Timing Diagram of IOUT ENABLE NER NE2 NE3 tON tOFF tON tOFF tEN tr tf tr Figure 9-9. tf Application Circuit A n a l o g __ D i g i t a l 12 t DIS VCC IR I2 GND RF I3 NER NE2 NE3 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC1 VCC2 IOUT GND RS ENABLE ENOSC VCC2 LD VCC T0816 4505H–DVD–11/05 T0816 10. Ordering Information Extended Type Number Package Remarks T0816-TCQ SSO16 Taped and reeled T0816M-TCQG Pb-free SSO16 Taped and reeled T0816-PEQG Pb-free QFN16 Taped and reeled 11. Package Information 13 4505H–DVD–11/05 14 T0816 4505H–DVD–11/05 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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