Features • • • • • • • • • • • • • • Current-controlled Output Current Source with 4 Input Channels Low-power Consumption Output Current up to 150 mA, Read Channel and Channel 2 Output Current up to 200 mA, Channel 3 and Channel 4 Total Output Current to 300 mA Rise Time 1.0 ns, Fall Time 1.1 ns On-chip RF Oscillator Control Frequency and Swings by Use of 2 External Resistors Oscillator Frequency Range from 200 MHz to 600 MHz Oscillator Swing to 100 mA Single 5 V Power Supply Common Enable/Disable Input TTL/CMOS Control Signals Small SSO16 Package 4-channel Laser Driver with RF Oscillator Application • • • • • DVD-RAM DVD-RW DVD+RW CD-RW Writable Optical Drives T0820 Description The T0820 is a laser diode driver for the operation of a grounded laser diode for writable optical drives. It includes four channels for four different optical power levels which are controlled by a separate IC. The read channel generates a continuous output level whereas channels 2 to 4 are provided as write channels with very fast switching speeds. Write current pulses are enabled when a "low" signal is applied to the NE pins. All channels are summed together at the IOUT pin. Read channel and channel 2 can contribute up to 150 mA and channels 3 and 4 up to 200 mA to the total output current of up to 300 mA. A total gain of 100 is provided between each reference current input and the selected output. Although the reference inputs are current inputs voltage control is possible by using external resistors. Frequency and swing can be set by two external resistors. Oscillation is enabled by a "high" at the ENOSC pin. Complete output current and oscillator switch-off is achieved by a `low' at the ENABLE input. Figure 1. Block Diagram I4 NE4 Channel 4 I3 NE3 Channel 3 I2 NE2 Channel 2 IR ENABLE ENOSC IOUT Read channel RF oscillator RF RS Rev. 4506F–DVD–09/04 Pin Configuration Figure 2. Pinning SSO16 IR 1 16 VCC1 I2 2 15 VCC2 RF 3 14 IOUT I3 4 13 GND T0820 I4 5 12 RS NE2 6 11 ENABLE NE3 7 10 ENOSC NE4 8 9 VCC2 Pin Description 2 Pin Symbol Type Function 1 IR Analog Input current, bias voltage approximately GND 2 I2 Analog Input current, bias voltage approximately GND 3 RF Analog External resistor to GND sets oscillator frequency 4 I3 Analog Input current, bias voltage approximately GND 5 I4 Analog Input current, bias voltage approximately GND 6 NE2 Digital Digital control of channel 2 (low active) 7 NE3 Digital Digital control of channel 3 (low active) 8 NE4 Digital Digital control of channel 4 (low active) 9 VCC2 Supply +5 V power supply for IOUT 10 ENOSC Digital Enables RF oscillator (high active) 11 ENABLE Digital Enables output current (high active) 12 RS Analog External resistor to GND sets oscillator swing 13 GND Supply Ground 14 IOUT Analog Output current source for laser diode 15 VCC2 Supply +5 V power supply for IOUT 16 VCC1 Supply +5 V power supply for circuit T0820 4506F–DVD–09/04 T0820 Absolute Maximum Ratings Parameters Symbol Value Unit Supply voltage VCC -0.5 to +6.0 V Input voltage at IR, I2, I3, I4 VIN1 -0.5 to +0.8 V Input voltage at NE2, NE3, NE4, ENOSC VIN2 -0.5 to VCC +0.5 V Output voltage VOUT -0.5 to VCC -1 V Power dissipation Junction temperature Storage temperature range Notes: PMAX (1) 0.7 (2) to 1 W Tj 150 _C Tstg -65 to +125 _C Symbol Value Unit (1) 115 K/W Symbol Value Unit VCC 4.5 to 5.5 V 1. RthJA ≤115 k/W, Tamb = 70°C 2. RthJA ≤115 k/W, Tamb = 25°C Thermal Resistance Parameters Junction ambient Note: RthJA 1. Measured with multi-layer test board (JEDEC standard) Operating Range Parameters Supply voltage range IIR, II2, II3, II4 <2 mA External resistor to GND to set oscillator frequency RF >3 kΩ External resistor to GND to set oscillator swing RS >100 Ω Operating temperature range Tamb 0 to +70 °C Input current 3 4506F–DVD–09/04 Electrical Characteristics: General VCC = 5 V, Tamb = 25°C, ENABLE = High, NE2 = NE3 = NE4 = High, ENOSC = Low, unless otherwise specified No. 1 Parameters Test Condition Pin Symbol 9, 15, 16 ICCPD2 9, 15, 16 Min. Typ. Max. Unit Type* 0.3 mA A ICCR1 95 mA A Power supply 1.1 Supply current, power down ENABLE = Low, NE2 = NE3 = NE4 = Low 1.2 Supply current, read mode, oscillator disabled IIR = II2 = II3 = II4 = 500 µA Supply current, read mode, oscillator enabled IIR = II2 = II3 = II4 = 500 µA, ENOSC = High, RS = 560 Ω, RF = 7.5 kΩ 9, 15, 16 ICCR2 100 mA A Supply current, write mode IIR = II2 = II3 = II4= 500 µA, NE2 = NE3 = NE4 = Low 9, 15, 16 ICCW 230 mA A 1.5 Supply current, input off IIR = II2 = II3 = II4 = 0 µA 9, 15, 16 ICCoff 16 mA A 2 Digital inputs V A V A V A V A V A 1.3 1.4 2.1 NE2/NE3/NE4 low voltage 6, 7, 8 VNELO 2.2 NE2/NE3/NE4 high voltage 6, 7, 8 VNEHI 1.3 2.0 2.3 ENABLE low voltage 11 VENLO 2.4 ENABLE high voltage 11 VENHI 2.5 ENOSC low voltage 10 VEOLO 2.6 ENOSC high voltage 10 VEOHI 3.0 V A 6, 7, 8 INELO -300 µA A 6, 7, 8 INEHI µA A µA A µA A µA A µA A 3 0.5 3.0 0.5 Current at digital inputs 3.1 NE2/NE3/NE4 low current NE = 0 V 3.2 NE2/NE3/NE4 high current NE = 5 V 3.3 ENABLE low current ENABLE = 0 V 11 IENLO 3.4 ENABLE high current ENABLE = 5 V 11 IENHI 3.5 ENOSC low current ENOSC = 0 V 10 IEOLO 3.6 ENOSC high current ENOSC = 5 V 10 IEOHI 800 -150 100 -100 800 * Type means: A: 100% tested B: 100% correlation tested C: Characterized on samples D: Design parameter 4 T0820 4506F–DVD–09/04 T0820 Electrical Characteristics: Laser Amplifier VCC = 5 V, Tamb = 25°C, ENABLE = High, unless otherwise specified No. 4 Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit 105 Type* Laser Amplifier 4.1 Best fit current gain Any channel(1) 14 GAIN 90 130 mA/mA A 4.2 Best fit current offset Any channel(1) 14 IOS -8 +4 mA A 4.3 Output current linearity Any channel(1) 14 ILIN -3 +3 % A 4.4 Input current range Input is sinking 1, 2, 4, 5 IDAC 0 3 mA C 4.5 Output current read channel Output is sourcing 14 IOUTR 150 mA A 4.6 Output current channel 2 Output is sourcing 14 IOUT2 150 mA A 4.7 Output current channel 3 Output is sourcing 14 IOUT3 200 mA A 4.8 Output current channel 4 Output is sourcing 14 IOUT4 200 mA A 4.9 Output current read channel + channel 2 Output is sourcing 14 IOUTR,2 150 mA A 4.10 Output current channel 3 + channel 4 Output is sourcing 14 IOUT3,4 200 mA A 4.11 Total output current Output is sourcing 14 IOUT 300 mA A 4.12 IOUT series resistor IOUT = 250 mA total ROUT to VCC-Rail 14 ROUT Ω C 4.13 IIN input impedance RIN is to GND 1, 2, 4, 5 RIN Ω A 4.14 NE threshold Temperature stabilized 6, 7, 8 VTH V B 4.15 Output off current 1 ENABLE = Low 4.16 Output off current 2 NE2=NE3=NE4=High IIR=0 µA, II2=II3=II4= 500 µA 8 150 200 250 1.68 IOFF1 1 mA A 14 IOFF2 1 mA A 5 mA A 4.17 Output off current 3 NE2=NE3=NE4=Low, IIR=II2=II3=II4= 0 µA 14 IOFF3 4.18 IOUT supply sensitivity, read mode IOUT = 40 mA, VCC = 5 V ± 10%, read only 14 VSER -4 -1 %/V A IOUT supply sensitivity, write mode IOUT = 80 mA, 40 mA read + 40 mA write, VCC=5V±10% 14 VSEW -4 0.2 %/V A 4.20 IOUT current output noise IOUT = 40 mA, ENOSC = Low 14 INOO 3 nA/ rt-Hz C 4.21 IOUT temperature sensitivity, read mode IOUT = 40 mA, read only 14 TSER -500 ppm/ °C C 4.22 IOUT temperature sensitivity, write mode IOUT = 80 mA, 40 mA read + 40 mA Write 14 TSEW -600 ppm/ °C C 4.19 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Linearity of the amplifier is calculated using a best fit method at three operating points of IOUT at 20 mA, 40 mA, and 60 mA. IOUT = (IIN × GAIN) + IOS 5 4506F–DVD–09/04 Electrical Characteristics: Laser Current Amplifier Output AC Performance VCC = +5 V, IOUT = 40 mA DC with 40 mA pulse, Tamb = 25°C, unless otherwise specified No. 5 Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Laser Current Amplifier Output AC Performance 5.1 Write rise time IOUT = 40 mA (read) + 40 mA (10% - 90%)(1) 14 tRISE 1.0 3.0 ns C 5.2 Write fall time IOUT = 40 mA (read) + 40 mA (10% - 90%)(1) 14 tFALL 1.1 3.0 ns C 5.3 Output current overshoot IOUT = 40 mA (read) + 40 mA (1) 14 OS 5 % C 5.4 IOUT ON prop delay NE 50% High-Low to IOUT at 50% of final value 14 tON 2.0 ns C NE 50% Low-High to IOUT at 50% of final value 14 tOFF 2.0 ns C ENABLE 50% HighLow to IOUT at 50% of final value 14 tDIS 10 ns C ENABLE 50% LowHigh to IOUT at 50% of final value 14 tEN 50 ns C IOUT = 50 mA, all channels, -3 dB value 14 BWLCA 20 MHz C Oscillator frequency RF = 7.5 kΩ RS = 560 Ω 14 FOSC MHz A 6.2 Oscillator temperature coefficient RF = 7.5 kΩ RS = 560 Ω 14 TCOSC -150 ppm/ °C C 6.3 Disable time oscillator ENOSC 50% LowHigh to IOUT at 50% of final value 14 TDISO 4 ns C ENOSC 50% HighLow to IOUT at 50% of final value 14 TENO 2 ns C RF = 7.5 kΩ RS = 560 Ω 14 SOSC mApp A 5.5 5.6 5.7 5.10 6 6.1 6.4 6.5 IOUT OFF prop delay Disable time Enable time Amplifier bandwidth Oscillator Enable time oscillator Oscillator swing 255 35 300 350 55 *) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. Load resistor at IOUT 10 Ω, measurement with a 50-Ω oscilloscope and a 39-Ω series resistor 6 T0820 4506F–DVD–09/04 T0820 Application Information Figure 3. Oscillator Frequency vs. Resistor RF (RS = 560 Ω) 550 Frequency (MHz) 500 450 400 350 300 250 200 4 5 6 7 8 9 10 RF ( kOhm ) Figure 4. Oscillator Swing vs. Resistor RS (RF = 7.5 kΩ) 120 Swing (mA pk-pk) 100 80 60 40 20 0 0 300 600 900 1200 1500 RS ( Ohm ) Figure 5. Oscillator Frequency Depending of Swing (RS = 560 Ω) 60 Swing (mA pk-pk) 50 40 30 20 10 0 200 250 300 350 400 450 500 550 600 Frequency ( MHz ) 7 4506F–DVD–09/04 Figure 6. Transfer Characteristic of Channel 2 (gain = 112) 300 250 IOUT (mA) 200 150 100 50 0 0 500 1000 1500 2000 2500 3000 I2 ( µA ) Figure 7. Transfer Characteristic of Channel 3 and 4 (gain = 112) 300 250 IOUT (mA) 200 150 100 50 0 0 500 1000 1500 2000 2500 3000 I3 ( µA ) Figure 8. Step Response, Read Channel: 50 mA, Channel 3 = 200 mApp 8 T0820 4506F–DVD–09/04 T0820 Figure 9. Timing Diagram ENABLE NE2 NE3 NE4 tON tOFF tON tOFF tON tOFF tEN tr tDIS tf tr tf tr tf Figure 10. Typical Application Circuit VCC A n a l o g IR VCC1 1 16 2 15 3 14 4 13 5 12 6 11 7 10 I2 VCC2 RF I3 GND I4 RS NE2 D i LD IOUT ENABLE NE3 ENOSC VCC2 NE4 8 9 VCC g i t a l 9 4506F–DVD–09/04 Ordering Information Extended Type Number T0820-TCQ Package SSO16 Remarks Taped and reeled Package Information 10 T0820 4506F–DVD–09/04 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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