PD-97276 Rev A IRAM109-015SD Series Integrated Power Hybrid IC for Appliance Motor Drive Applications H-Bridge 1A, 500V Description International Rectifier’s IRAM109-015SD is a multi-chip Hybrid IC developed for low power appliance motor control applications such as Fans, Pumps, refrigerator compressors, etc. The compact Single in line (SIP-S) package minimizes PCB space. Several built-in protection features such as temperature feedback, shoot through prevention, under voltage lockout, and shutdown input makes this a very robust solution. The internal shunt resistor saves board space and provides clean current feedback. The combination of highly efficient high voltage MOSFETs, the industry benchmark Half-Bridge HVIC driver (3.3V/5V input compatible) and thermally enhanced package makes this a highly competitive solution. The bootstrapped power supplies for the high side drivers can be generated using internal bootstrap diodes eliminating the need for isolated power supplies. This feature reduces the component count, board space, and cost of the system. Features • • • • • • • • • • Motor Power range 60~250W / 85~253 Vac. Integrated Gate Drivers and Bootstrap Diodes. Shut-Down input turns off both channels. Under-voltage lockout for all switches. Matched propagation delay. Schmitt-triggered input logic. Cross-conduction prevention logic. Low di/dt switching for better noise immunity. Internal Current Shunt. Internal thermistor for temperature feedback. Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. VDSS MOSFET Blocking Voltage 500 V Vbus Positive DC Bus Input Voltage 400 V Io @ TC=25°C RMS Phase Current 2.0 Io @ TC=100°C RMS Phase Current (Note 1) 1.0 Ipk @ TC=25°C Maximum Peak Phase Current (tp<100µs) 5.0 Pd Maximum Power dissipation per FET @ TC =25°C TJ (MOSFET & IC) Maximum Operating Junction Temperature 18 A W +150 TC Operating Case Temperature Range -20 to +100 TSTG Storage Temperature Range -40 to +125 T Mounting torque Range (M3 screw) 0.6 °C Nm Note 1: Sinusoidal Modulation at V+=360V, TJ=150°C, FPWM=20kHz, FMOD=50Hz, MI=0.8, PF=0.6, See Figure 5. www.irf.com 1 IRAM109-015SD Internal Electrical Schematic – IRAM109-015SD DB1 RB Q1 1 2 3 4 5 10 VCC VB IN HO SD VS DT LO Vss RG1 9 8 7 COM Q2 RG2 6 IC1 DB2 1 2 3 4 5 VB IN HO SD VS DT LO Vss Q3 10 VCC RG3 9 8 Q4 7 COM RG4 6 IC2 RD RS TH 1 2 2 3 4 5 6 7 8 11 12 15 16 19 www.irf.com IRAM109-015SD Absolute Maximum Ratings (Continued) Symbol Parameter Min Max Units Conditions BVR Bootstrap Diode Reverse Breakdown Voltage 600 --- V TJ = 25°C, IR=1mA PBR Peak Bootstrap Resistor Peak Power (Single Pulse) --- 25.0 W tP=100µs, TC =100°C VS1,2,3 High side floating supply offset voltage VB1,2,3 - 20 VB1,2,3 +0.3 V VB1,2,3 High side floating supply voltage -0.3 500 V VDD Low Side and logic fixed supply voltage -0.3 20 V VIN Input voltage IN1, IN2 -0.3 Lower of (VSS+15V) or VDD+0.3V V Electrical Characteristics (TJ= 25°C Unless Otherwise Specified) Symbol Parameter Min Typ Max V(BR)DSS Drain-to-Source Breakdown Voltage 500 --- --- RDS(ON) Drain-to-Source On Resistance --- 2.2 2.7 IDSS Drain-to-Source Leakage Current VFM Diode Forward Voltage Drop VBDFM Bootstrap Diode Forward Voltage Drop RBR ƩRBR/RBR Units Conditions V ƻ VIN=5V, ID=250µA ID=1A, VDD=15V ID=1A, VDD=15V, TJ=150°C --- 5.5 --- --- 10 100 --- 0.87 1.1 --- 0.70 --- --- --- 1.25 V IF=1A Bootstrap Resistor Value --- 22 --- ƻ TJ=25°C Bootstrap Resistor Tolerance --- --- ±5 % TJ=25°C www.irf.com µA V VIN=5V, V+=500V IF=1A IF=1A, TJ=150°C 3 IRAM109-015SD Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential. Symbol + Definition Min Typ Max --- --- 360 VS+10 VS+15 VS+20 Units V Positive Bus Input Voltage VB1,2,3 High side floating supply voltage VDD Low side and logic fixed supply voltage 10 15 20 V VIN Logic input voltage (IN & SD) - Note 2 VSS --- VDD V Fp PWM Carrier Frequency --- 20 --- KHz V Note 2: Logic operational for Vs from COM-5V to COM+500V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details). Static Electrical Characteristics (TJ= 25°C Unless Otherwise Specified) VBIAS (VDD, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all channels (Static Electrical Characteristics are Based on Driver IC Data Sheet). Symbol Definition Min Typ Max Units VDDUV+, VBSUV+ VDD and VBS supply undervoltage, Positive going threshold 8 8.9 9.8 V VDDUV-, VBSUV- VDD and VBS supply undervoltage, Negative going threshold 7.4 8.2 9 V IQBS Quiescent VBS supply current 20 75 130 µA IQDD Quiescent VDD supply current 0.4 1 1.6 mA ILK Offset Supply Leakage Current --- --- 50 µA Dynamic Electrical Characteristics (TJ= 25°C Unless Otherwise Specified) Symbol Parameter Min Typ Max TON Input to Output propagation turnon delay time (see fig. 13a) --- 2.4 --- Input to Output propagation turnoff delay time (see fig. 13b) TOFF --- Units Conditions µs ID=1.5A, V+=360V 570 --- ns Internal Current Sensing Resistor - Shunt Characteristics Symbol Parameter Min Typ Max RShunt Resistance 218 220 222 mƻ TCoeff Temperature Coefficient 0 --- 200 ppm/°C TRange Temperature Range 0 --- 125 °C 4 Units Conditions TC = 25°C www.irf.com IRAM109-015SD Thermal and Mechanical Characteristics Symbol Parameter Rth(J-C) Thermal resistance, per FET Min Typ Max --- 5.1 6.9 Units Conditions °C/W Flat, Insulation Material Internal NTC - Thermistor Characteristics Parameter Definition Min Typ Max Units Conditions R25 Resistance 97 100 103 kƻ TC = 25°C R125 Resistance 2.25 2.52 2.80 kƻ TC = 125°C B B-constant (25-50°C) 4165 4250 4335 k Temperature Range -40 --- 125 °C Typ. Dissipation constant --- 1.0 --- R2 = R1e [B(1/T2 - 1/T1)] mW/°C TC = 25°C Input-Output Logic Level Table SD IN1,2 VS1,2 1 1 0 1 0 x V+ 0 Off www.irf.com 5 IRAM109-015SD Timing Parameter Definitions IN IN(LO) SD IN(HO) 50% 50% ton toff tr 90% HO LO HO LO Figure 1. Input/Output Timing Diagram tf 90% 10% 10% Figure 2. Switching Time Waveform Diagram IN (LO) 50% 50% IN (HO) 90% HO LO 50% 50% IN DTLO-HO LO 10% 90% HO 10% DTHO-LO MT MT 90% 10% MDT= DTLO-HO - DTHO-LO Figure 3. Deadtime Waveform Diagram 6 LO HO Figure 4. Delay Matching Waveform Diagram www.irf.com IRAM109-015SD PO2 VB2 PO1 VB1 VBUS+ 12 15 16 19 DCgnd 8 11 VSS Isense 7 VCC 5 6 TH SD 4 IN2 2 3 IN1 1 Typical Application Connection – IRAM109-015SD Application Circuit Recommendation 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and PO1,2-VB1,2 terminals, and the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044, or Figure 12. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with VCC (See maximum ratings Table on page 3). 4. The case of the module is connected to the negative DC Bus and is NOT Isolated. It is recommended to provide isolation material between case and heat sink to avoid electrical shock. www.irf.com 7 IRAM109-015SD Module Pin-Out Description Pin Name 1 IN1 Logic Input Gate Driver - Phase 1 Description 2 IN2 Logic Input Gate Driver - Phase 2 3 VTH Temperature Feedback 4 SD Shun-down Function 5 VDD +15V Main Supply 6 VSS Negative Main Supply 7 ISENSE 8 V- Negative Bus Input Voltage 9 NA none Current Feedback 10 NA none 11 VS2 Output 2 - High Side Floating Supply Offset Voltage 12 VB2 High Side Floating Supply voltage 2 13 NA none 14 NA none 15 VS1 Output 1 - High Side Floating Supply Offset Voltage 16 VB1 High Side Floating Supply voltage 1 17 NA none 18 NA none 19 V+ Positive Bus Input Voltage 1 19 8 www.irf.com IRAM109-015SD Maximum Output Phase RMS Current - A 1.6 1.4 1.2 1 0.8 TC = 80ºC TC = 90ºC TC = 100ºC 0.6 0.4 TJ = 150ºC Sinusoidal Modulation 0.2 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 5. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V+=360V, TJ=150°C, FMOD=50Hz, MI=0.8, PF=0.6 Maximum Output Phase RMS Current - A 1.4 TJ = 150ºC Sinusoidal Modulation 1.2 1 0.8 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz 0.6 0.4 0.2 0 1 10 100 Modulation Frequency - Hz Figure 6. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6 www.irf.com 9 IRAM109-015SD 30 TJ = 150ºC Sinusoidal Modulation Total Power Loss- W 25 20 15 10 IOUT = 1.2A IOUT = 1.0A IOUT = 0.8A 5 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 7. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6 45 TJ = 150ºC Sinusoidal Modulation 40 Total Power Loss - W 35 30 25 20 15 FPWM = 20kHz FPWM = 16kHz FPWM = 12kHz 10 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Output Phase Current - ARMS Figure 8. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6 10 www.irf.com IRAM109-015SD Max Allowable Case Temperature - ºC 150 125 TC is limited to 100ºC 100 75 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz 50 25 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Output Phase Current - ARMS Figure 9. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V+=360V, TJ=150°C, Modulation Depth=0.8, PF=0.6 160 MOSFET Junction Temperature - °C TJ avg = 1.27 x TT herm + 3.09 150 140 130 120 110 100 90 80 115.8 70 70 75 80 85 90 95 100 105 110 115 120 Internal Therm istor Tem perature Equivalent Read Out - °C Figure 10. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature www.irf.com 11 IRAM109-015SD 5.0 Thermistor Pin Read-Out Voltage - V 4.5 4.0 TTHERM RTHERM TTHERM RTHERM TTHERM RTHERM °C ƻ °C ƻ °C ƻ 3.5 3.0 2.5 2.0 1.5 1.0 0.5 -40 4397119 25 100000 90 -35 3088599 30 79222 95 7481 6337 -30 2197225 35 63167 100 5384 -25 1581881 40 50677 105 4594 -20 1151037 45 40904 110 3934 -15 846579 50 33195 115 3380 -10 628988 55 27091 120 2916 -5 471632 60 22224 125 2522 0 357012 65 18322 130 2190 5 272500 70 15184 135 1907 10 209710 75 12635 140 1665 15 162651 80 10566 145 1459 20 127080 85 8873 150 1282 0.0 -40 -30 -20 -10 0 Min Avg. Max 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Therm istor Tem perature - °C Figure 11. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and Normal Thermistor Resistance values vs. Temperature Table. 11.0 10µF Recommended Bootstrap Capacitor - µF 10.0 9.0 8.0 6.8µF 7.0 6.0 4.7µF 5.0 4.0 3.3µF 3.0 2.2µF 1.5µF 2.0 1.0 0.0 0 5 10 15 20 PWM Frequency - kHz Figure 12. Recommended Bootstrap Capacitor Value vs. Switching Frequency 12 www.irf.com IRAM109-015SD Figure 13. Switching Parameter Definitions VDS ID ID VDS 90% ID 50% IN1/IN2 90% ID 50% VDS IN1 / IN2 50% IN1/IN2 IN1/IN2 50% VCE 10% ID 10% ID tf tr TON Figure 13a. Input to Output propagation turn-on delay time. TOFF Figure 13b. Input to Output propagation turn-off delay time. Figure 13c. Diode Reverse Recovery. www.irf.com 13 IRAM109-015SD Figure CT1. Switching Loss Circuit 14 www.irf.com IRAM109-015SD Package Outline IRAM109-015SD missing pin ; 9,10,13,14,17,18 note3 IRAM109-015SD note2 note5 note4 note1: Unit Tolerance is +0.4mm, 䇭䇭䇭䇭 Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Characters Font in this drawing differs from Font shown on Module. note4: Lot Code Marking. 䇭䇭䇭 Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note5: Non-Isolated Back Side. For mounting instruction see AN-1049 Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 7/2007 www.irf.com 15