PD-96956 Rev B Integrated Power Hybrid IC for Appliance Motor Drive Applications IRAMX20UP60A Series 20A, 600V with open Emitter Pins Description International Rectifier's IRAMX20UP60A is a 20A, 600V Integrated Power Hybrid IC for Appliance Motor Drives applications such air conditioning systems and compressor drivers as well as in light industrial application. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry benchmark 3 phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-in temperature monitor and input logic protection function, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a Single in line package (SiP2) with heatspreader for the power die along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink. Features • • • • • • • • • • • • Integrated Gate Drivers Temperature Monitor Overcurrent shutdown Fully Isolated Package Low VCE (on) Non Punch Through IGBT Technology. Undervoltage lockout for all channels Matched propagation delay for all channels 5V Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power range 0.75~1.5kW / 85~253 Vac Isolation 2000VRMS min Absolute Maximum Ratings Parameter Description VCES / VRRM IGBT/Diode Blocking Voltage Max. Value 600 V+ Positive Bus Input Voltage 450 IO @ TC=25°C RMS Phase Current (Note 1) 20 IO @ TC=100°C RMS Phase Current (Note 1) 10 IO Pulsed RMS Phase Current (Note 2) 30 FPWM PWM Carrier Frequency 20 Pd Power dissipation per IGBT @ TC =25°C 38 W VISO Isolation Voltage (1min) 2000 VRMS TJ (IGBT & Diodes) Operating Junction temperature Range -40 to +150 TJ (Driver IC) Operating Junction temperature Range -40 to +150 T Mounting torque Range (M3 screw) 0.5 to 0.6 Units V A kHz °C Nm Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms; TC=25°C; FPWM=16kHz. www.irf.com 1 IRAMX20UP60A Internal Electrical Schematic - IRAMX20UP60B V+ (10) VRU (12) VRV (13) VRW (14) VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2) 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16 24 HO1 LO2 15 25 VB1 1 VCC HIN1 (15) HIN2 (16) HIN3 (17) 2 HIN1 LIN1 (18) 5 LIN1 Driver IC LO3 14 3 HIN2 4 HIN3 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LIN2 (19) LIN3 (20) T/ITRIP (21) THERMISTOR VCC (22) VSS (23) 2 www.irf.com IRAMX20UP60A Absolute Maximum Ratings (Continued) All voltages are absolute referenced to COM. Symbol Parameter IBDF Bootstrap Diode Peak Forward Current PBR Peak VS1,2,3 VB1,2,3 Units Conditions Min Max --- 4.5 A tP= 10ms, TJ = 150°C, TC=100°C 25.0 W tP=100µs, TC =100°C ESR / ERJ series VB1,2,3 +0.3 V 600 V Bootstrap Resistor Peak Power --(Single Pulse) High Side floating supply VB1,2,3 - 25 voltage High Side floating supply voltage -0.3 VCC Low Side and logic fixed supply voltage -0.3 20 V VIN Input voltage LIN, HIN, T/ITrip -0.3 Lower of (VSS+15V) or VCC+0.3V V Inverter Section Electrical Characteristics @TJ= 25°C Units Conditions Symbol Parameter Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage 600 --- --- V VIN=5V, IC=250µA ∆V(BR)CES / ∆T Temperature Coeff. Of Breakdown Voltage --- 0.3 --- V/°C VIN=5V, IC=1.0mA (25°C - 150°C) VCE(ON) Collector-to-Emitter Saturation Voltage --- 1.75 2.15 --- 2.10 2.60 ICES Zero Gate Voltage Collector Current --- 5 80 --- 165 --- VFM Diode Forward Voltage Drop --- 1.90 2.60 --- 1.50 2.20 V µA V VBDFM Bootstrap Diode Forward Voltage Drop -- -- 1.25 --- --- 1.10 RBR Bootstrap Resistor Value --- 22 --- Ω ∆RBR/RBR Bootstrap Resistor Tolerance --- --- ±5 % www.irf.com V IC=10A, VCC=15V IC=10A, VCC=15V, TJ=150°C VIN=5V, V+=600V VIN=5V, V+=600V, TJ=150°C IC=10A IC=10A, TJ=150°C IF=1A IF=1A, TJ=125°C 3 IRAMX20UP60A Inverter Section Switching Characteristics @ TJ= 25°C Symbol Parameter EON Units Conditions Min Typ Max Turn-On Switching Loss --- 390 490 EOFF Turn-Off Switching Loss --- 150 200 ETOT Total Switching Loss --- 540 690 EREC Diode Reverse Recovery energy --- 35 70 tRR Diode Reverse Recovery time --- 100 --- EON Turn-on Switching Loss --- 620 780 EOFF Turn-off Switching Loss --- 305 400 ETOT Total Switching Loss --- 925 1180 EREC Diode Reverse Recovery energy --- 65 135 tRR Diode Reverse Recovery time --- 130 --- ns QG Turn-On IGBT Gate Charge --- 56 84 nC RBSOA Reverse Bias Safe Operating Area µJ IC=10A, V+=400V VCC=15V, L=2mH Energy losses include "tail" and diode reverse recovery See CT1 ns µJ IC=10A, V+=400V VCC=15V, L=2mH, TJ=150°C Energy losses include "tail" and diode reverse recovery See CT1 IC=15A, V+=400V, VGE=15V TJ=150°C, IC=10A, VP=600V V+= 450V VCC=+15V to 0V FULL SQUARE See CT3 TJ=150°C, VP=600V, SCSOA Short Circuit Safe Operating Area 10 --- --- µs V+= 360V, VCC=+15V to 0V See CT2 TJ=150°C, VP=600V, tSC<10µs ICSC Short Circuit Collector Current --- 140 --- A V+= 360V, VGE=15V VCC=+15V to 0V See CT2 Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommende conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential (Note 3) Symbol Definition Min Max VB1,2,3 High side floating supply voltage VS+12 VS+20 VS1,2,3 High side floating supply offset voltage Note 4 450 VCC Low side and logic fixed supply voltage 12 20 VT/ITRIP T/ITRIP input voltage VSS VSS+5 VIN Logic input voltage LIN, HIN VSS VSS+5 Units V V V Note 3: For more details, see IR21365 data sheet Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details) 4 www.irf.com IRAMX20UP60A Static Electrical Characteristics Driver Function VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. (Note 3) Symbol Definition Min Typ Max Units VIH Logic "0" input voltage 3.0 --- --- V VIL Logic "1" input voltage --- --- 0.8 V VCCUV+, VBSUV+ VCC and VBS supply undervoltage Positive going threshold 10.6 11.1 11.6 V VCCUV-, VBSUV- VCC and VBS supply undervoltage Negative going threshold 10.4 10.9 11.4 V VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V VIN, Clamp Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10µA 4.9 5.2 5.5 V IQBS Quiescent VBS supply current VIN=0V --- --- 165 µA IQCC Quiescent VCC supply current VIN=0V --- --- 3.35 mA ILK Offset Supply Leakage Current --- --- 60 µA IIN+ Input bias current VIN=5V --- 200 300 µA IIN- Input bias current VIN=0V --- 100 220 µA T/ITRIP+ T/ITRIP bias current VITRIP=5V --- 30 100 µA T/ITRIP- T/ITRIP bias current VITRIP=0V --- 0 1 µA V(T/ITRIP) T/ITRIP threshold Voltage 3.85 4.30 4.75 V V(T/ITRIP,HYS) T/ITRIP Input Hysteresis --- 0.07 --- V www.irf.com 5 IRAMX20UP60A Thermal and Mechanical Characteristics Symbol Parameter Min Typ Rth(J-C) Rth(J-C) Max Thermal resistance, per IGBT --- 1.5 2.2 Thermal resistance, per Diode --- 5 5.5 Rth(C-S) Thermal resistance, C-S --- 0.1 --- CD Creepage Distance 3.2 --- --- Units Conditions Flat, greased surface. Heatsink °C/W compound thermal conductivity 1W/mK mm See outline Drawings Internal NTC - Thermistor Characteristics Parameter Definition Min Typ Max R25 Resistance 97 100 103 kΩ TC = 25°C R125 Resistance 2.25 2.52 2.80 kΩ TC = 125°C B B-constant (25-50°C) 4165 4250 4335 k 125 °C Temperature Range -40 Typ. Dissipation constant Units Conditions R2 = R1e [B(1/T2 - 1/T1)] mW/°C TC = 25°C 1 Input-Output Logic Level Table V+ Ho Hin1,2,3 (15,16,17) U,V,W IC Driver (8,5,2) Lin1,2,3 (18,19,20) 6 Lo T/ITRIP HIN1,2,3 LIN1,2,3 U,V,W 0 0 0 1 0 1 1 X 1 0 1 X V+ 0 Off Off www.irf.com IRAMX20UP60A HIN1,2,3 LIN1,2,3 T/ITRIP U,V,W Figure1. Input/Output Timing Diagram HIN1,2,3 LIN1,2,3 50% 50% T/ITRIP U,V,W 50% 50% TT/ITRIP TFLT-CLR Figure 2. ITrip Timing Waveform Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7 IRAMX20UP60A Module Pin-Out Description Pin Name 1 VB3 Description 2 U, VS3 3 NA none 4 VB2 High Side Floating Supply voltage 2 5 V,VS2 High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage Output 2 - High Side Floating Supply Offset Voltage 6 NA none 7 VB1 High Side Floating Supply voltage 1 8 W,VS1 9 NA + Output 1 - High Side Floating Supply Offset Voltage none Positive Bus Input Voltage 10 V 11 NA none 12 LE1 Low Side Emitter Connection - Phase 1 13 LE2 Low Side Emitter Connection - Phase 2 14 LE3 Low Side Emitter Connection - Phase 3 15 HIN1 Logic Input High Side Gate Driver - Phase 1 16 HNI2 Logic Input High Side Gate Driver - Phase 2 17 HIN3 Logic Input High Side Gate Driver - Phase 3 18 LIN1 Logic Input Low Side Gate Driver - Phase 1 19 LIN2 Logic Input Low Side Gate Driver - Phase 2 20 LIN3 Logic Input Low Side Gate Driver - Phase 3 21 T/ITRIP 22 VCC +15V Main Supply 23 VSS Negative Main Supply Temperature Monitor and Shut-down Pin 1 23 8 www.irf.com IRAMX20UP60A Typical Application Connection IRAMX20UP60A 15µF 1 22ohm BOOT-STRAP CAPACITORS 2.2µF U V CURRENT SENSING CAN USE A SINGLE SENSE RESISTOR OR PHASE LEG SENSING AS SHOWN W V+ DC BUS CAPACITORS PHASE LEG CURRENT SENSE CONTROLLER 035-Z2L03 IRAMX20UP60A 3-Phase AC MOTOR T/ITRIP VDD(15 V) VSS TEMP SENSE 15 V 1µF 10µF 23 O/C SENSE (ACTIVE LOW) 0.1µF 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. Current sense signal can be obtained from pin 20 and pin 23. 5. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 6. PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 7. Fault/Enable pin must be pulled-up to +5V. www.irf.com 9 Maximum Output Phase RMS Current - A IRAMX20UP60A 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 TC = 100°C TC = 110°C TC = 120°C TJ = 150°C Sinusoidal Modulation 0 2 4 6 8 10 12 14 16 18 20 PWM Frequency - kHz Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Maximum Output Phase RMS Current - A V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 TJ = 150°C Sinusoidal Modulation FPWM = 20kHz FPWM = 16kHz FPWM = 12kHz 1 10 100 Modulation Frequency - Hz Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency V+=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6 10 www.irf.com IRAMX20UP60A 180 Total Power Losses - W 160 140 120 100 80 IOUT = 8 ARMS 60 IOUT = 10 ARMS 40 0 IOUT = 12 ARMS TJ = 150°C 20 Sinusoidal Modulation 0 2 4 6 8 10 12 14 16 18 20 PWM Switching Frequency - kHz Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6 220 Total Power Losses - W 200 180 TJ = 150°C 160 Sinusoidal Modulation 140 120 100 80 FPWM = 12 kHz 60 FPWM = 16 kHz 40 FPWM = 20 kHz 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Output Phase Current - ARMS Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation VBUS=400V , TJ=150°C, www.irf.com Modulation Depth=0.8, PF=0.6 11 Maximum Allowable Case Temperature -°C IRAMX20UP60A 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 FPWM = 12 kHz FPWM = 16 kHz FPWM = 20 kHz TJ = 150°C Sinusoidal Modulation 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Output Phase Current - ARMS Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase IGBT Junction Temperature - °C 160 TJ avg. = 1.5840 x TTherm+ 3.2861 150 140 130 120 110 100 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 98 100 Internal Thermistor Temperature Equivalent Read Out - °C Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature 12 www.irf.com IRAMX20UP60A Thermistor Pin Read-Out Voltage - V 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 TTHERM °C RTHERM Ω TTHERM °C RTHERM Ω TTHERM °C RTHERM Ω -40 -35 4397119 25 100000 90 7481 3088599 30 79222 95 6337 -30 2197225 35 63167 100 5384 -25 1581881 -20 1151037 45 40904 110 3934 -15 846579 50 33195 115 3380 -10 628988 55 27091 120 2916 -5 471632 60 22224 125 2522 0 357012 65 18322 130 2190 5 272500 70 15184 135 1907 10 209710 75 12635 140 1665 15 162651 80 10566 145 1459 20 127080 85 8873 150 1282 40 50677 105 4594 +VCC (15V) Min Avg. Max 1.5 RTHERM VTHERM 12 kohm R EXT 1.0 0.5 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Thermistor Temperature - °C Recommended Bootstrap Capacitor - µF Figure 9. Thermistor Readout vs. Temperature (7.5kohm pull-up resistor, 5V) and Nominal Thermistor Resistance values vs. Temperature Table. 16.0 15µF 15.0 14.0 V+ RBS 13.0 DBS CBS vB 12.0 +15V 11.0 10µF 10.0 VCC HIN HIN LIN LIN VSS COM 9.0 RG1 HO U,V,W VS RG2 LO VSS 8.0 GND 6.8µF 7.0 6.0 4.7µF 5.0 4.0 3.3µF 3.0 2.0 0 5 10 15 20 PWM Frequency - kHz Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency www.irf.com 13 IRAMX20UP60A Figure 11. Switching Parameter Definitions VCE IC IC VCE 90% IC 50% HIN /LIN 90% IC 50% VCE HIN /LIN 50% HIN /LIN HIN /LIN 50% VCE 10% IC 10% IC tr tf TON TOFF Figure 11a. Input to Output propagation turn-on delay time. Figure 11b. Input to Output propagation turn-off delay time. IF VCE HIN/LIN Irr trr Figure 11c. Diode Reverse Recovery. 14 www.irf.com IRAMX20UP60A V+ 5V Ho IN Hin1,2,3 IC Driver U,V,W IO Lo Lin1,2,3 Figure CT1. Switching Loss Circuit V+ Ho Hin1,2,3 1k VCC IN 10k Lin1,2,3 IC Driver 5VZD U,V,W IO Lo IN Io Figure CT2. S.C.SOA Circuit V+ Ho Hin1,2,3 1k IN 10k VCC IC Driver 5VZD Lin1,2,3 IN U,V,W IO Lo Io Figure CT3. R.B.SOA Circuit www.irf.com 15 IRAMX20UP60A Package Outline IRAMX20UP60A note 2 62 3 A 56 note 3 Ø3.4 TYP. B 25.8 1 11.4 IRAMX20UP60A IRAMX16UP60B 23 0.80 0.55 TYP. 0.70 TYP. 4.7 2.5 0.45 11.4 REF A B 5.5 46.2 C 9.0 REF. Ø0.20 M 22 PITCHES = 44 INT. 2 TYP. 9 note 1 INT. 25.3 035-Z2L03 R0.6 TYP. 50 2 TYP. 5.0 3.2 CONVEX ONLY 0.10 MIN. C Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Convex only 0.10mm typical. For mounting instruction see AN-1049 16 www.irf.com IRAMX20UP60A Package Outline IRAMX20UP60A-2 note 2 62 3 A 56 B 25.8 23 2 TYP. Ø0.20 M A B 0.80 0.55 TYP. TYP. 13.9 1 5 note 1 11.4 IRAMX20UP60A IRAMX16UP60B 0.70 0.45 25.3 035-Z2L03 11.4 REF. Ø3.4 TYP. note 3 4.7 2.5 11.4 REF 22 PITCHES = 44 5 REF. 5.5 46.2 C R0.6 TYP. 10° REF . 2 TYP. 50 3.2 MIN. CONVEX ONLY 0.10 C Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Convex only 0.10mm typical. For mounting instruction see AN-1049 Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 03/05 www.irf.com 17