IRF IRAMX20UP60A

PD-96956 Rev B
Integrated Power Hybrid IC for
Appliance Motor Drive Applications
IRAMX20UP60A
Series
20A, 600V
with open Emitter Pins
Description
International Rectifier's IRAMX20UP60A is a 20A, 600V Integrated Power Hybrid IC for Appliance Motor
Drives applications such air conditioning systems and compressor drivers as well as in light industrial application. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated
package to simplify design.
This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry
benchmark 3 phase high voltage, high speed driver in a fully isolated thermally enhanced package.
A built-in temperature monitor and input logic protection function, along with the short-circuit rated IGBTs
and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation.
Using a Single in line package (SiP2) with heatspreader for the power die along with full transfer mold
structure minimizes PCB space and resolves isolation problems to heatsink.
Features
•
•
•
•
•
•
•
•
•
•
•
•
Integrated Gate Drivers
Temperature Monitor
Overcurrent shutdown
Fully Isolated Package
Low VCE (on) Non Punch Through IGBT Technology.
Undervoltage lockout for all channels
Matched propagation delay for all channels
5V Schmitt-triggered input logic
Cross-conduction prevention logic
Lower di/dt gate driver for better noise immunity
Motor Power range 0.75~1.5kW / 85~253 Vac
Isolation 2000VRMS min
Absolute Maximum Ratings
Parameter
Description
VCES / VRRM
IGBT/Diode Blocking Voltage
Max. Value
600
V+
Positive Bus Input Voltage
450
IO @ TC=25°C
RMS Phase Current (Note 1)
20
IO @ TC=100°C
RMS Phase Current (Note 1)
10
IO
Pulsed RMS Phase Current (Note 2)
30
FPWM
PWM Carrier Frequency
20
Pd
Power dissipation per IGBT @ TC =25°C
38
W
VISO
Isolation Voltage (1min)
2000
VRMS
TJ (IGBT & Diodes)
Operating Junction temperature Range
-40 to +150
TJ (Driver IC)
Operating Junction temperature Range
-40 to +150
T
Mounting torque Range (M3 screw)
0.5 to 0.6
Units
V
A
kHz
°C
Nm
Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms; TC=25°C; FPWM=16kHz.
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1
IRAMX20UP60A
Internal Electrical Schematic - IRAMX20UP60B
V+ (10)
VRU (12)
VRV (13)
VRW (14)
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
23 VS1
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
LO1 16
24 HO1
LO2 15
25 VB1
1 VCC
HIN1 (15)
HIN2 (16)
HIN3 (17)
2 HIN1
LIN1 (18)
5 LIN1
Driver IC
LO3 14
3 HIN2
4 HIN3
LIN2 LIN3 F ITRIP EN RCIN VSS COM
6
7 8
9
10 11
12 13
LIN2 (19)
LIN3 (20)
T/ITRIP (21)
THERMISTOR
VCC (22)
VSS (23)
2
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IRAMX20UP60A
Absolute Maximum Ratings (Continued)
All voltages are absolute referenced to COM.
Symbol
Parameter
IBDF
Bootstrap Diode Peak Forward
Current
PBR Peak
VS1,2,3
VB1,2,3
Units Conditions
Min
Max
---
4.5
A
tP= 10ms,
TJ = 150°C, TC=100°C
25.0
W
tP=100µs, TC =100°C
ESR / ERJ series
VB1,2,3 +0.3
V
600
V
Bootstrap Resistor Peak Power
--(Single Pulse)
High Side floating supply
VB1,2,3 - 25
voltage
High Side floating supply voltage
-0.3
VCC
Low Side and logic fixed supply
voltage
-0.3
20
V
VIN
Input voltage LIN, HIN, T/ITrip
-0.3
Lower of
(VSS+15V) or
VCC+0.3V
V
Inverter Section Electrical Characteristics @TJ= 25°C
Units Conditions
Symbol
Parameter
Min
Typ
Max
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600
---
---
V
VIN=5V, IC=250µA
∆V(BR)CES / ∆T
Temperature Coeff. Of
Breakdown Voltage
---
0.3
---
V/°C
VIN=5V, IC=1.0mA
(25°C - 150°C)
VCE(ON)
Collector-to-Emitter Saturation
Voltage
---
1.75
2.15
---
2.10
2.60
ICES
Zero Gate Voltage Collector
Current
---
5
80
---
165
---
VFM
Diode Forward Voltage Drop
---
1.90
2.60
---
1.50
2.20
V
µA
V
VBDFM
Bootstrap Diode Forward Voltage
Drop
--
--
1.25
---
---
1.10
RBR
Bootstrap Resistor Value
---
22
---
Ω
∆RBR/RBR
Bootstrap Resistor Tolerance
---
---
±5
%
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V
IC=10A, VCC=15V
IC=10A, VCC=15V, TJ=150°C
VIN=5V, V+=600V
VIN=5V, V+=600V, TJ=150°C
IC=10A
IC=10A, TJ=150°C
IF=1A
IF=1A, TJ=125°C
3
IRAMX20UP60A
Inverter Section Switching Characteristics @ TJ= 25°C
Symbol
Parameter
EON
Units Conditions
Min
Typ
Max
Turn-On Switching Loss
---
390
490
EOFF
Turn-Off Switching Loss
---
150
200
ETOT
Total Switching Loss
---
540
690
EREC
Diode Reverse Recovery energy
---
35
70
tRR
Diode Reverse Recovery time
---
100
---
EON
Turn-on Switching Loss
---
620
780
EOFF
Turn-off Switching Loss
---
305
400
ETOT
Total Switching Loss
---
925
1180
EREC
Diode Reverse Recovery energy
---
65
135
tRR
Diode Reverse Recovery time
---
130
---
ns
QG
Turn-On IGBT Gate Charge
---
56
84
nC
RBSOA
Reverse Bias Safe Operating Area
µJ
IC=10A, V+=400V
VCC=15V, L=2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
ns
µJ
IC=10A, V+=400V
VCC=15V, L=2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
IC=15A, V+=400V, VGE=15V
TJ=150°C, IC=10A, VP=600V
V+= 450V
VCC=+15V to 0V
FULL SQUARE
See CT3
TJ=150°C, VP=600V,
SCSOA
Short Circuit Safe Operating Area
10
---
---
µs
V+= 360V,
VCC=+15V to 0V
See CT2
TJ=150°C, VP=600V, tSC<10µs
ICSC
Short Circuit Collector Current
---
140
---
A
V+= 360V, VGE=15V
VCC=+15V to 0V
See CT2
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommende conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V
differential (Note 3)
Symbol
Definition
Min
Max
VB1,2,3
High side floating supply voltage
VS+12
VS+20
VS1,2,3
High side floating supply offset voltage
Note 4
450
VCC
Low side and logic fixed supply voltage
12
20
VT/ITRIP
T/ITRIP input voltage
VSS
VSS+5
VIN
Logic input voltage LIN, HIN
VSS
VSS+5
Units
V
V
V
Note 3: For more details, see IR21365 data sheet
Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
4
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IRAMX20UP60A
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable
to all six channels. (Note 3)
Symbol
Definition
Min
Typ
Max
Units
VIH
Logic "0" input voltage
3.0
---
---
V
VIL
Logic "1" input voltage
---
---
0.8
V
VCCUV+, VBSUV+
VCC and VBS supply undervoltage Positive going threshold
10.6
11.1
11.6
V
VCCUV-, VBSUV-
VCC and VBS supply undervoltage Negative going threshold
10.4
10.9
11.4
V
VCCUVH, VBSUVH
VCC and VBS supply undervoltage lock-out hysteresis
---
0.2
---
V
VIN, Clamp
Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10µA
4.9
5.2
5.5
V
IQBS
Quiescent VBS supply current VIN=0V
---
---
165
µA
IQCC
Quiescent VCC supply current VIN=0V
---
---
3.35
mA
ILK
Offset Supply Leakage Current
---
---
60
µA
IIN+
Input bias current VIN=5V
---
200
300
µA
IIN-
Input bias current VIN=0V
---
100
220
µA
T/ITRIP+
T/ITRIP bias current VITRIP=5V
---
30
100
µA
T/ITRIP-
T/ITRIP bias current VITRIP=0V
---
0
1
µA
V(T/ITRIP)
T/ITRIP threshold Voltage
3.85
4.30
4.75
V
V(T/ITRIP,HYS)
T/ITRIP Input Hysteresis
---
0.07
---
V
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5
IRAMX20UP60A
Thermal and Mechanical Characteristics
Symbol
Parameter
Min
Typ
Rth(J-C)
Rth(J-C)
Max
Thermal resistance, per IGBT
---
1.5
2.2
Thermal resistance, per Diode
---
5
5.5
Rth(C-S)
Thermal resistance, C-S
---
0.1
---
CD
Creepage Distance
3.2
---
---
Units Conditions
Flat, greased surface. Heatsink
°C/W compound thermal conductivity
1W/mK
mm
See outline Drawings
Internal NTC - Thermistor Characteristics
Parameter
Definition
Min
Typ
Max
R25
Resistance
97
100
103
kΩ
TC = 25°C
R125
Resistance
2.25
2.52
2.80
kΩ
TC = 125°C
B
B-constant (25-50°C)
4165
4250
4335
k
125
°C
Temperature Range
-40
Typ. Dissipation constant
Units Conditions
R2 = R1e [B(1/T2 - 1/T1)]
mW/°C TC = 25°C
1
Input-Output Logic Level Table
V+
Ho
Hin1,2,3
(15,16,17)
U,V,W
IC
Driver
(8,5,2)
Lin1,2,3
(18,19,20)
6
Lo
T/ITRIP
HIN1,2,3
LIN1,2,3
U,V,W
0
0
0
1
0
1
1
X
1
0
1
X
V+
0
Off
Off
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IRAMX20UP60A
HIN1,2,3
LIN1,2,3
T/ITRIP
U,V,W
Figure1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
50%
T/ITRIP
U,V,W
50%
50%
TT/ITRIP
TFLT-CLR
Figure 2. ITrip Timing Waveform
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the
half-bridge output voltage would be determined by the direction of current flow in the load.
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7
IRAMX20UP60A
Module Pin-Out Description
Pin
Name
1
VB3
Description
2
U, VS3
3
NA
none
4
VB2
High Side Floating Supply voltage 2
5
V,VS2
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
Output 2 - High Side Floating Supply Offset Voltage
6
NA
none
7
VB1
High Side Floating Supply voltage 1
8
W,VS1
9
NA
+
Output 1 - High Side Floating Supply Offset Voltage
none
Positive Bus Input Voltage
10
V
11
NA
none
12
LE1
Low Side Emitter Connection - Phase 1
13
LE2
Low Side Emitter Connection - Phase 2
14
LE3
Low Side Emitter Connection - Phase 3
15
HIN1
Logic Input High Side Gate Driver - Phase 1
16
HNI2
Logic Input High Side Gate Driver - Phase 2
17
HIN3
Logic Input High Side Gate Driver - Phase 3
18
LIN1
Logic Input Low Side Gate Driver - Phase 1
19
LIN2
Logic Input Low Side Gate Driver - Phase 2
20
LIN3
Logic Input Low Side Gate Driver - Phase 3
21
T/ITRIP
22
VCC
+15V Main Supply
23
VSS
Negative Main Supply
Temperature Monitor and Shut-down Pin
1
23
8
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IRAMX20UP60A
Typical Application Connection IRAMX20UP60A
15µF
1
22ohm
BOOT-STRAP
CAPACITORS
2.2µF
U
V
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
W
V+
DC BUS
CAPACITORS
PHASE LEG
CURRENT
SENSE
CONTROLLER
035-Z2L03
IRAMX20UP60A
3-Phase AC
MOTOR
T/ITRIP
VDD(15 V)
VSS
TEMP
SENSE
15 V
1µF
10µF
23
O/C
SENSE
(ACTIVE LOW)
0.1µF
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected
between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the
power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3).
4. Current sense signal can be obtained from pin 20 and pin 23.
5. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
6. PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition
must be cleared before resuming operation.
7. Fault/Enable pin must be pulled-up to +5V.
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9
Maximum Output Phase RMS Current - A
IRAMX20UP60A
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
TC = 100°C
TC = 110°C
TC = 120°C
TJ = 150°C
Sinusoidal Modulation
0
2
4
6
8
10
12
14
16
18
20
PWM Frequency - kHz
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Maximum Output Phase RMS Current - A
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
TJ = 150°C
Sinusoidal Modulation
FPWM = 20kHz
FPWM = 16kHz
FPWM = 12kHz
1
10
100
Modulation Frequency - Hz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
V+=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6
10
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IRAMX20UP60A
180
Total Power Losses - W
160
140
120
100
80
IOUT = 8 ARMS
60
IOUT = 10 ARMS
40
0
IOUT = 12 ARMS
TJ = 150°C
20
Sinusoidal Modulation
0
2
4
6
8
10
12
14
16
18
20
PWM Switching Frequency - kHz
Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
220
Total Power Losses - W
200
180
TJ = 150°C
160
Sinusoidal Modulation
140
120
100
80
FPWM = 12 kHz
60
FPWM = 16 kHz
40
FPWM = 20 kHz
20
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Output Phase Current - ARMS
Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation
VBUS=400V , TJ=150°C,
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Modulation Depth=0.8, PF=0.6
11
Maximum Allowable Case Temperature -°C
IRAMX20UP60A
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
FPWM = 12 kHz
FPWM = 16 kHz
FPWM = 20 kHz
TJ = 150°C
Sinusoidal Modulation
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Output Phase Current - ARMS
Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase
IGBT Junction Temperature - °C
160
TJ avg. = 1.5840 x TTherm+ 3.2861
150
140
130
120
110
100
68
70
72
74
76
78
80
82
84
86
88
90
92
94
96
98
100
Internal Thermistor Temperature Equivalent Read Out - °C
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
12
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IRAMX20UP60A
Thermistor Pin Read-Out Voltage - V
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
TTHERM
°C
RTHERM
Ω
TTHERM
°C
RTHERM
Ω
TTHERM
°C
RTHERM
Ω
-40
-35
4397119
25
100000
90
7481
3088599
30
79222
95
6337
-30
2197225
35
63167
100
5384
-25
1581881
-20
1151037
45
40904
110
3934
-15
846579
50
33195
115
3380
-10
628988
55
27091
120
2916
-5
471632
60
22224
125
2522
0
357012
65
18322
130
2190
5
272500
70
15184
135
1907
10
209710
75
12635
140
1665
15
162651
80
10566
145
1459
20
127080
85
8873
150
1282
40
50677
105
4594
+VCC (15V)
Min
Avg.
Max
1.5
RTHERM
VTHERM
12 kohm
R EXT
1.0
0.5
0.0
-40 -30 -20 -10
0
10
20
30
40
50
60
70
80
90 100 110 120 130 140 150
Thermistor Temperature - °C
Recommended Bootstrap Capacitor - µF
Figure 9. Thermistor Readout vs. Temperature (7.5kohm pull-up resistor, 5V) and
Nominal Thermistor Resistance values vs. Temperature Table.
16.0
15µF
15.0
14.0
V+
RBS
13.0
DBS
CBS
vB
12.0
+15V
11.0
10µF
10.0
VCC
HIN
HIN
LIN
LIN
VSS COM
9.0
RG1
HO
U,V,W
VS
RG2
LO
VSS
8.0
GND
6.8µF
7.0
6.0
4.7µF
5.0
4.0
3.3µF
3.0
2.0
0
5
10
15
20
PWM Frequency - kHz
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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13
IRAMX20UP60A
Figure 11. Switching Parameter Definitions
VCE
IC
IC
VCE
90% IC
50%
HIN /LIN
90% IC
50%
VCE
HIN /LIN
50%
HIN /LIN
HIN /LIN
50%
VCE
10% IC
10% IC
tr
tf
TON
TOFF
Figure 11a. Input to Output propagation
turn-on delay time.
Figure 11b. Input to Output propagation turn-off delay time.
IF
VCE
HIN/LIN
Irr
trr
Figure 11c. Diode Reverse Recovery.
14
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IRAMX20UP60A
V+
5V
Ho
IN
Hin1,2,3
IC
Driver
U,V,W
IO
Lo
Lin1,2,3
Figure CT1. Switching Loss Circuit
V+
Ho
Hin1,2,3
1k
VCC
IN
10k
Lin1,2,3
IC
Driver
5VZD
U,V,W
IO
Lo
IN
Io
Figure CT2. S.C.SOA Circuit
V+
Ho
Hin1,2,3
1k
IN
10k
VCC
IC
Driver
5VZD
Lin1,2,3
IN
U,V,W
IO
Lo
Io
Figure CT3. R.B.SOA Circuit
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15
IRAMX20UP60A
Package Outline IRAMX20UP60A
note 2
62
3
A
56
note 3
Ø3.4 TYP.
B
25.8
1
11.4
IRAMX20UP60A
IRAMX16UP60B
23
0.80
0.55
TYP.
0.70
TYP.
4.7
2.5
0.45
11.4 REF
A B
5.5
46.2
C
9.0 REF.
Ø0.20 M
22 PITCHES = 44
INT.
2 TYP.
9
note 1
INT.
25.3
035-Z2L03
R0.6 TYP.
50
2 TYP.
5.0
3.2
CONVEX ONLY
0.10
MIN.
C
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
4- Convex only 0.10mm typical.
For mounting instruction see AN-1049
16
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IRAMX20UP60A
Package Outline IRAMX20UP60A-2
note 2
62
3
A
56
B
25.8
23
2 TYP.
Ø0.20 M
A B
0.80
0.55
TYP.
TYP.
13.9
1
5
note 1
11.4
IRAMX20UP60A
IRAMX16UP60B
0.70
0.45
25.3
035-Z2L03
11.4 REF.
Ø3.4 TYP.
note 3
4.7
2.5
11.4 REF
22 PITCHES = 44
5 REF.
5.5
46.2
C
R0.6 TYP.
10°
REF
.
2 TYP.
50
3.2
MIN.
CONVEX ONLY
0.10 C
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
4- Convex only 0.10mm typical.
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
03/05
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17