PD-94640 Plug N DriveTM Integrated Power Module for Appliance Motor Drive IRAMS10UP60A Series Description International Rectifier's IRAMS10UP60A is an Integrated Power Module developed and optimized for electronic motor control in appliance applications such as washing machines and refrigerators. Plug N Drive technology offers an extremely compact, high performance AC motor-driver in a single isolated package for a very simple design. A built-in temperature monitor and over-temperature/over-current protection, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. The integration of the bootstrap diodes for the high-side driver section, and the single polarity power supply required to drive the internal circuitry, simplify the utilization of the module and deliver further cost reduction advantages. Features • • • • • • • • • • • • Integrated Gate Drivers and Bootstrap Diodes. Temperature Monitor Temperature and Overcurrent shutdown Fully Isolated Package. Low VCE (on) Non Punch Through IGBT Technology. Undervoltage lockout for all channels Matched propagation delay for all channels Low side IGBT emitter pins for current conrol Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power range 0.4~0.75kW / 85~253 Vac Absolute Maximum Ratings Parameter VCES Description Maximum IGBT Blocking Voltage Io @ T C - 25 o C RMS Phase Current 10 Io @TC - 100 C RMS Phase Current 5 Ipk Maximum Peak Phase Current (tp<100ms) 15 Fp Maximum PWM Carrier Frequency 20 kHz Pd Maximum Power dissipation per Phase 20 W Viso Isolation Voltage (1min) 2000 VRMS TJ Operating Junction temperature Range -40 to +150 Operating Junction temperature Range -40 to +150 o (IGBT & Diodes) TJ (Driver IC) T www.irf.com Mounting torque Range (M3 screw) Max. Value 600 0.8 to 1.0 Units V A °C Nm 1 2/24/03 IRAMS10UP60A Internal Electrical Schematic - IRAMS10UP60A V+ (10) VRU (12) VRV (13) VRW (14) Rg1 Rg3 Rg5 VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2) 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 Rg2 LO1 16 Rg4 24 HO1 R3 LO2 15 25 VB1 1 VCC HIN1 (15) HIN2 (16) HIN3 (17) 2 HIN1 LIN1 (18) 5 LIN1 Rg6 Driver IC LO3 14 3 HIN2 4 HIN3 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LIN2 (19) LIN3 (20) T/Itrip (21) R1 RT THERMISTOR R2 C VDD (22) VSS (23) 2 www.irf.com IRAMS10UP60A Inverter Section Electrical Characteristics @ TJ = 25°C Symbol Param e t e r Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage Units Conditions 600 --- --- V ∆ V(BR)CES / ∆ T Temperature Coeff. Of Breakdown Voltage --- 0.57 --- V/°C VCE(ON) Collector-to-Emitter Saturation Voltage ICES Zero Gate Voltage Collector Current VF M Diode Forward Voltage Drop ------------- 1. 7 2. 0 5 10 1. 8 1. 3 2.0 2.4 15 40 2.35 1.7 V µA V VIN =0V, IC=20 µ A VIN =0V, IC=1.0 m A (25°C - 150°C) TJ =25°C, VDD =15V IC=5A IC=5A TJ =150°C VIN =5V, V + =600V VIN =5V, V + =600V, T J=150°C IC=5A IC=5A, TJ=150°C Inverter Section Switching Characteristics @ TJ = 25°C Symbol Parameter Min Typ Max Eon Turn-On Switching Loss --- 155 180 Eoff Turn-Off Switching Loss --- 70 90 Etot Total Switching Loss --- 225 270 Eon Turn-on Swtiching Loss --- 260 300 Eoff Turn-off Switching Loss --- 130 160 Etot Total Switching Loss --- 390 460 Erec Diode Reverse Recovery energy --- 30 t rr Diode Reverse Recovery time --- 95 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area Units Conditions µJ See CT1 --- TJ=25°C TJ=150°C µJ Energy losses include "tail" and diode reverse recovery 40 µJ 110 ns TJ=150°C, V+ =400V VDD =15V, IF =5A, L=2mH, R G =33Ω TJ=150°C, IC=5A, VP =600V V+=480V, V DD =+15V to 0V R G =33Ω See CT3 FULL SQUARE 10 IC=5A, V+ =400V VDD =15V, R G =33Ω, L=2mH --- µs TJ=150°C, VP =600V, R G =33Ω, V +=360V, VDD =+15V to 0V See CT2 Thermal Resistance Symbol R th(J-C) R th(J-C) R th(C-S) Param e t e r Junction to case thermal resistance, each IGBT under inv e rter operation. Junction to case thermal resistance, each Diode under inv e rter operation. Thermal Resistance case to sink www.irf.com M in Typ Max Units Conditions --- 4. 2 4.7 °C/W --- 5. 5 6.5 Flat, greased surface. Heatsink compound thermal °C/W conductiv ity - 1W/mK --- 0. 1 --- °C/W 3 IRAMS10UP60A Absolute Maximum Ratings Driver function Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VSS. (Note 1) 14 Symbol Definition Min Max Units V High Side offset voltage -0.3 600 V VB1,2,3 High Side floating supply voltage -0.3 20 V VDD Low Side and logic fixed supply voltage -0.3 20 V VIN Input voltage LIN, HIN, T/I TRI P -0.3 7 V TJ Juction Temperature -40 150 °C + Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to VSS . The VS offset rating is tested with all supplies biased at 15V differential. (Note 1) Sym bol De finition M in M ax VB1,2,3 Units High side floating supply voltage VS +12 VS +20 VS1,2,3 High side floating supply offset voltage Note 2 450 VD D Low side and logic fixed supply voltage 12 20 VITRIP T/I TRI P input voltage VSS VSS +5 VIN Logic input voltage LIN, HIN VSS VSS +5 V V V Static Electrical Characteristics Driver Function VBIAS (VCC, VBS1,2,3) = 15V unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels. (Note 1) Sym bol De finition M in Typ M ax Units VIN,th+ Positive going input threshold --- --- 3 V VIN,th- Negative going input threshold 0.8 --- --- V VCCUV+ VBSUV+ VCC and VBS supply undervoltage Positive going threshold 10.6 11.1 11.6 V VCCUVVBSUV- VCC and VBS supply undervoltage Negative going threshold 10.4 10.9 11.4 V VCCUVH VBSUVH VCC and VBS supply undervoltage Ilockout hysteresis --- 0. 2 --- V IQBS Quiescent VBS supply current --- 70 120 IQCC Quiscent V CC supply current --- 1. 6 2.3 ILK Offset Supply Leakage Current --- --- 50 II N + Input bias current (OUT=HI or OUT=LO) --- 120 --- µA µA µA µA V(T/ITRIP) T/ITRIP threshold Voltage (OUT=HI or OUT=LO) (Note 3) 3.85 4. 3 4.75 V 4 www.irf.com IRAMS10UP60A Dynamic Electrical Characteristics VDD = VBS = VBIAS = 15V, Io= 1A, VD=9V , PWMin= 2kHz, VINON = VIN,th+, VINOFF = VIN,thTA = 25°C unless otherwise specified. Symbol Definition M in Typ Max Units TON Input to output propagation turn-on delay time (see fig.11) - 470 - ns TOFF Input to output propagation turn-off delay time (see fig. 11) - 615 - ns DT Dead Time - 300 - ns I/TTrip T/I Trip to six switch to turn-off propagation delay (see fig. 2) - 750 - ns TFCLTRL Post ITrip to six switch to turn-off clear time (see fig. 2) - 9 - ms Internal NTC - Thermistor Characteristics Parameter Typ Units Conditions R25 Resistance 100 +/- 5% kΩ TC = 25°C R125 Resistance 2.522 + 17.3 % /- 14.9% kΩ TC = 125°C R25/50 Resistance 4250 +/- 3% kΩ -40 / 125 °C 1 mW/°C Temperature Range Typ. Dissipation constant R 2 = R 1e [B(1/T2 - 1/T1)] TC = 25°C Note 1: For more details, see IR21365 data sheet Note 2: Logic operational for Vs from COM-5V to COM+600V. Logic stata held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details) Thermistor Built-in IRAMS10UP60A VCC (22) NTC IR21365 12K T/ITRIP (21) 4.3K VSS (23) Note 3: The Maximum recommended sense voltage at the T/ITRIP terminal under normal operating conditions is 3.3V. www.irf.com 5 IRAMS10UP60A Figure1. Input/Output Timing Diagram HIN1,2,3 LIN1,2,3 HO1,2,3 LO1,2,3 T/Itrip U,V,W Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load. Vbus Ho Hin1,2,3 (15,16,17) U,V,W (8,5,2) IC Driver Lin1,2,3 (18,19,20) 6 Itrip HIN1,2,3 LIN1,2,3 U,V,W 0 0 0 1 0 1 1 X 1 0 1 X Vbus 0 X X Lo www.irf.com IRAMS10UP60A Figure 2. T/ITrip Timing Waveform HIN1,2,3 LIN1,2,3 T/Itrip 50% U,V,W 50% tfltclr Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7 IRAMS10UP60A Module Pin-Out Description P in 8 Na m e 1 VB3 2 W ,VS 3 3 na 4 VB2 5 V,VS2 6 na 7 VB1 8 U,V S 1 9 na D e s c r ip t io n H i g h S i d e F l o a t i n g S u p p ly V o lta g e 3 O u t p u t 3 - H i g h S i d e F l o a t i n g S u p p ly O ffs e t V o l t a g e none H i g h S i d e F l o a t i n g S u p p ly vo lta g e 2 O u t p u t 2 - H i g h S i d e F l o a t i n g S u p p ly O ffs e t V o l t a g e none H i g h S i d e F l o a t i n g S u p p ly vo lta g e 1 O u t p u t 1 - H i g h S i d e F l o a t i n g S u p p ly O ffs e t V o l t a g e none 10 V+ P o s itive B u s Input V o lta g e 11 na none 12 LE1 L o w S i d e E m itte r C o n n e c tio n - P h a s e 1 13 LE2 L o w S i d e E m itte r C o n n e c tio n - P h a s e 2 14 LE3 L o w S i d e E m itte r C o n n e c tio n - P h a s e 3 15 H IN1 L o g ic Input High S i d e G a t e D r i v e r - P h a s e 1 16 H IN2 L o g ic Input High S i d e G a t e D r i v e r - P h a s e 2 17 H IN3 L o g ic Input High S i d e G a t e D r i v e r - P h a s e 3 18 LIN 1 L o g ic Input Low S i d e G a t e D r i v e r - P h a s e 1 19 LIN 2 L o g ic Input Low S i d e G a t e D r i v e r - P h a s e 2 20 LIN 3 L o g ic Input Low S i d e G a t e D r i v e r - P h a s e 3 21 T / Itr ip 22 VCC + 1 5 V M a in S u p p ly 23 VSS N e g a tive M a in S u p p ly T e m p e r a t u r e M o n ito r a n d S h u t - d o w n P in www.irf.com IRAMS10UP60A Typical Application Connection IRAMS10UP60A VBW VSW U BOOT-STRAP CAPACITORS CURRENT SENSING CAN USE A SINGLE SENSE RESISTOR OR PHASE LEG SENSING AS SHOWN VBV V 3-ph AC MOTOR VSV VBU W VSU V+ DC BUS CAPACITORS LeU PHASE LEG CURRENT SENSE LeV LeW HINU HINV Driver IC HINW CONTROLLER LINU LINV LINW TEMP SENSE T/ITRIP 5k 3.3 V 1m VDD(15 V) 4.3K 8.2k 10m 0.1 m VSS NTC 12k O/C SENSE (ACTIVE LOW) 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between Vcc-Gnd and Vb-Vs terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1mF, are strongly recommended. 3. Low inductance shunt resistors should be used for phase leg current sensing. Similarly, the length of the traces between pins 12, 13 and 14 to the corresponding shunt resistors should be kept as small as possible. 4. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a or application note AN-1044. 5. Over-current sense signal can be obtained from external hardware detecting excessive instantaneous current in inverter. www.irf.com 9 IRAMS10UP60A VBUS = 400 V, TJ=TJ Max °C, Modulation Depth = 0.8, PF = 0.6 MAX RMS OUTPUT CURRENT / PHASE (A) 10 9 Tc = 100 °C Tc = 110 °C Tc = 120 °C 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 PWM SWITCHING FREQUENCY (kHz) Figure 3. Maximum sinusoidal phase current as function of switching frequency VBUS=400V, Tj=150°C, Modulation Depth=0.8, PF=0.6 7 Switching Frequency : 12KHz 16KHz 20KHz Maximum RMS Phase Current (A) 6 5 4 3 2 1 0 1 10 100 Motor Current Modulation Frequency (Hz) Figure 4. Maximum sinusoidal phase current as function of modulation frequency VBUS=400V, Tj=150°C, Tc=100°C, Modulation Depth=0.8, PF=0.6 10 www.irf.com IRAMS10UP60A TURN-ON AT Tj = 125 °C, Rg = 33 OHM, 310 V 16 350 14 300 250 CURRENT VOLTAGE 10 200 8 150 6 100 VOLTAGE (V) CURRENT (A) 12 4 50 2 0 0 -2 -50 0 0.05 0.1 0.15 0.2 TIME (µs) 0.25 0.3 0.35 0.4 Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=125°C, VBUS=310V TURN-OFF AT Tj = 125 °C, Rg = 33 OHM, 310 V 6 360 5 300 CURRENT VOLTAGE 240 3 180 2 120 1 60 0 0 -1 VOLTAGE (V) CURRENT (A) 4 -60 0 0.2 0.4 0.6 0.8 1 TIME (µs) Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=125°C, VBUS=310V www.irf.com 11 IRAMS10UP60A 120 THERMISTOR RESISTANCE (kΩ) 100 MINIMUM NOMINAL MAXIMUM 80 60 40 20 0 0 20 40 60 80 TEMPERATURE (°C) 100 120 140 Figure 7. Variation of thermistor resistance with temperature 4 3.5 V SENSE (V) 3 NOMINAL MINIMUM MAXIMUM 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 TEMPERATURE (°C) Figure 8. Variation of temperature sense voltage with thermistor temperature using external bias resistance of 4.3KΩ, Vcc=15V 12 www.irf.com IRAMS10UP60A 200 IGBT JUNCTION TEMPERATURE (°C) 180 160 140 120 100 80 60 40 80 90 100 110 120 130 140 THERMISTOR TEMPERATURE (°C) 150 160 170 Figure 9. Estimated maximum IGBT junction temperature with thermistor temperature RECOMMENDED MINIMUM VALUE OF BOOTSTRAP CAPACITOR VERSUS SWITCHING FREQUENCY, VCC = 15 V 14 12 CAPACITANCE ( µ F) 10 8 6 4 2 0 0 5 10 15 SWITCHING FREQUENCY (kHz) 20 25 Figure 10. Recommended minimum Bootstrap Capacitor value Vs Switching Frequency www.irf.com 13 IRAMS10UP60A Figure 11. Switching Parameter Definitions VCE IC IC VCE 90% IC 50% HIN/LIN 90% IC HIN/LIN HIN/LIN 50% HIN/LIN 10% VCE 10% IC 10% IC TON TOFF tr Figure 11a. Input to Output propagation turn-on delay time tf Figure 11b. Input to Output propagation turn-off delay timet IF VCE HIN/LIN Irr trr Figure 11c. Diode Reverse Recovery 14 www.irf.com IRAMS10UP60A Vbus 5V Ho Hin1,2,3 IC Driver U,V,W Lo Lin1,2,3 Figure CT1. Switching Loss Circuit Vbus 1k 10k VCC Lin1,2,3 IN Ho Hin1,2,3 IC Driver 5VZD U,V,W PWM=4µs Io Lo IN Io Figure CT2. S.C.SOA Circuit Vbus Ho Hin1,2,3 1k IN 10k VCC IC Driver 5VZD Lin1,2,3 IN U,V,W Io Lo Io Figure CT3. R.B.SOA Circuit www.irf.com 15 IRAMS10UP60A Package Outline note 2 note 3 027-E2D24 note 1 Standard pin leadforming option Notes: Dimensions in mm 1 - Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 16 www.irf.com IRAMS10UP60A Package Outline note 2 note 3 027-E2D24 note 1 Pin leadforming option -2 Notes: Dimensions in mm 1 - Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/02 www.irf.com 17