BGA7210 700 MHz to 3800 MHz high linearity variable gain amplifier Rev. 2 — 4 January 2012 Product data sheet 1. Product profile 1.1 General description The BGA7210 MMIC is an extremely linear Variable Gain Amplifier (VGA), operating from 0.7 GHz to 3.8 GHz. The maximum gain is 30 dB. It has an attenuation range of 31.5 dB. At its minimum attenuation setting it has a maximum output power of 21 dBm, an IP3O of 39 dBm and a noise figure of 6.5 dB. The current consumption can be optimized per attenuation setting allowing for optimized overall system performance. The current consumption and attenuation level are controlled through a Serial Peripheral Interface (SPI). The current can be reduced to 120 mA. Optimal linearity performance is obtained at 185 mA. The BGA7210 has a fast switching power-down pin to further reduce current consumption during idle time. The BGA7210 has been designed and qualified for the severe mission profile of cellular base stations, but its outstanding RF performance and interfacing flexibility make it suitable for a wide variety of applications. The BGA7210 is housed in a 32 pins 5 mm 5 mm leadless HVQFN32 package. 1.2 Features and benefits Operating frequency range from 0.7 GHz to 3.8 GHz High gain of 30 dB High IP3O of 39 dBm Attenuation range of 31.5 dB with 0.5 dB step (6 bit) Maximum output power of 21 dBm Noise figure of 6.5 dB at maximum gain ESD protection on all pins (HBM 4 kV; CDM 2 kV) Fast switching power-save mode Moisture sensitivity level 2 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications IF and RF applications WiMAX and cellular base stations Cable modem termination systems Temperature compensation circuits BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier 1.4 Quick reference data Table 1. Quick reference data 4.75 V VSUP 5.25 V; 40 C Tamb +85 C; maximum current; input and output is terminated with 50 ; unless otherwise specified. Symbol Parameter VSUP supply voltage ICC(tot) total supply current Conditions 4.75 5.0 5.25 V 160 195 230 mA - 185 - mA minimum current - 120 - mA power-down current - 15 - mA 40 +25 +85 C 26 30 maximum current optimized current Tamb ambient temperature Gp power gain Min Typ Max Unit [1] [2] minimum attenuation 700 MHz f 1400 MHz range NF attenuation range noise figure 33 dB 1400 MHz f 1700 MHz 26 29.5 33 dB 1700 MHz f 2200 MHz 26 29 33 dB 2200 MHz f 2800 MHz 25 28 31 dB 3400 MHz f 3800 MHz 22 26 30 dB 700 MHz f 2200 MHz 28 31.5 35 dB 2200 MHz f 2800 MHz 27 30.5 34 dB 3400 MHz f 3800 MHz 26 29.5 33 dB minimum attenuation 700 MHz f 2200 MHz - 6.5 8.5 dB 2200 MHz f 2800 MHz - 7 9 dB 3400 MHz f 3800 MHz - 8 10 dB maximum attenuation 700 MHz f 2200 MHz - 27.5 30.5 dB 2200 MHz f 2800 MHz - 28 31 dB - 28.5 32 dB 3400 MHz f 3800 MHz IP3O output third-order intercept point minimum attenuation [3] 700 MHz f 1400 MHz 34 39 - dBm 1400 MHz f 1700 MHz 32 37 - dBm 1700 MHz f 2200 MHz 30 35 - dBm 28 34 - dBm 2200 MHz f 2800 MHz 2200 MHz f 2800 MHz; Csh = 0.68 pF [4] 30 35 - dBm 24 30 - dBm 700 MHz f 1400 MHz - 35 - dBm 1400 MHz f 1700 MHz - 33 - dBm 1700 MHz f 2200 MHz - 31 - dBm - 30 - dBm - 30 - dBm - 25 - dBm 3400 MHz f 3800 MHz maximum attenuation [3] 2200 MHz f 2800 MHz 2200 MHz f 2800 MHz; Csh = 0.68 pF 3400 MHz f 3800 MHz BGA7210 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 [4] © NXP B.V. 2012. All rights reserved. 2 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier Table 1. Quick reference data …continued 4.75 V VSUP 5.25 V; 40 C Tamb +85 C; maximum current; input and output is terminated with 50 ; unless otherwise specified. Symbol Parameter PL(1dB) Conditions Min Typ Max Unit output power at 1 dB gain compression minimum attenuation 700 MHz f 2800 MHz 2200 MHz f 2800 MHz; Csh = 0.68 pF [4] 3400 MHz f 3800 MHz [1] 18 21 - dBm 20 23 - dBm 16 19 - dBm Supply voltage on pins RF_OUT, VCC2, VDDA, VCC1 and VDDD. [2] See Section 9.2. [3] Pi = 12 dBm per tone; f = 10 MHz. [4] See Section 11. 2. Pinning information 25 GND 26 GND 27 GND 28 GND 29 RF_IN 30 n.c. terminal 1 index area 31 GND 32 GND 2.1 Pinning GND 1 24 PUPMXG/PWRDN GND 2 23 CLK GND 3 22 SER_IN GND 4 GND 5 GND 6 19 VDDD GND 7 18 GND GND 8 17 VCC1 21 SS VDDA 16 20 SER_OUT VCC2 15 GND 14 GND 13 RF_OUT 12 n.c. 11 9 GND GND 10 BGA7210 aaa-000658 Transparent top view Transparent top view Fig 1. Pin configuration 2.2 Pin description Table 2. BGA7210 Product data sheet Pin description Symbol Pin Description GND 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 13, Ground 14, 18, 25, 26, 27, 28, 31, 32 n.c. 11, 30 not connected RF_OUT 12 RF output and supply to amplifier 2 VCC2 15 Supply voltage to amplifier 2 VDDA 16 Analog supply voltage to DSA All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 3 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier Table 2. Pin description …continued Symbol Pin Description VCC1 17 Supply voltage to amplifier 1 VDDD 19 Digital supply voltage to digital controller SER_OUT 20 SPI data output SS 21 SPI slave select (0 = select; 1 = deselect) SER_IN 22 SPI data input CLK 23 SPI clock input PUPMXG/ 24 PWRDN Power-up gain attenuation / power down RF_IN RF input 29 3. Ordering information Table 3. Ordering information Type number Package BGA7210 Name Description Version HVQFN32 plastic thermal enhanced very thin quad flat package; no leads; 32 terminals; body 5 5 0.85 mm SOT617-3 4. Marking Table 4. Marking Type number Marking code BGA7210 7210 Description ***** manufacturing code TSD***1Y ** = The actual assembly date code. 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Max Unit VSUP supply voltage 0.6 +8 V VI input voltage [2] 0.6 +8 V output voltage [3] 0.6 +8 V input current [4] 20 mA IO output current [5] 20 +20 mA PRFIN power on pin RF_IN - 30 dBm Tstg storage temperature 65 +150 C II Product data sheet Min [1] VO BGA7210 Conditions All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 +20 © NXP B.V. 2012. All rights reserved. 4 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj junction temperature - 150 C VESD electrostatic discharge Human Body Model (HBM); voltage According JEDEC standard 22-A114E - 4 kV Charged Device Model (CDM); According JEDEC standard 22-C101B - 2 kV Typ Unit 16 K/W [1] Absolute maximum DC voltage on pins RF_OUT, VCC2, VDDA, VCC1, VDDD and RF_IN. [2] Absolute maximum DC voltage on pins SS, SER_IN, CLK and PUPMXG/PWRDN. [3] Absolute maximum DC voltage on pin SER_OUT. [4] Absolute maximum DC current through pins SS, SER_IN, CLK and PUPMXG/PWRDN. [5] Absolute maximum DC current through pin SER_OUT. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to solder point Tsp 85 C Rth(j-sp) [1] [1] Tsp is the temperature at the solder point. 7. Static characteristics Table 7. Symbol Static characteristics Parameter VSUP supply voltage ICC(tot) total supply current Conditions [1] maximum ICC Typ Max Unit 4.75 5.0 5.25 V 160 195 230 mA - 185 - mA minimum current - 120 - mA power-down current - 15 - mA 40 +25 +85 C optimized current Tamb [2] Min ambient temperature supply current on pin RF_OUT - 85 - mA supply current on pin VCC2 - 45 - mA supply current on pin VDDA - 5 - mA supply current on pin VCC1 - 55 - mA supply current on pin VDDD - 5 - mA VIL LOW-level input voltage [3] 0.1 0 +0.8 V VIH HIGH-level input voltage [3] 2 3.3 VSUP + 0.1 V LOW-level output voltage [4] 0.1 0 +0.8 V VOH HIGH-level output voltage [4] 2.5 3.3 3.4 V IOL LOW-level output current [4] 15 - 0 mA IOH HIGH-level output current [4] 0 - 15 mA VOL [1] Supply voltage on pins RF_OUT, VCC2, VDDA, VCC1 and VDDD. [2] See Section 9.2. BGA7210 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 5 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier [3] Digital input pins are: SS, SER_IN, CLK and PUPMXG/PWRDN. [4] Digital output pin is: SER_OUT. 8. Dynamic characteristics Table 8. Dynamic characteristics 4.75 V VSUP 5.25 V; 40 C Tamb +85 C; maximum current; input and output terminated with 50 , unless otherwise specified. Symbol Parameter Conditions Gp power gain minimum attenuation G/T Min Typ Max Unit 700 MHz f 1400 MHz 26 30 33 dB 1400 MHz f 1700 MHz 26 29.5 33 dB 1700 MHz f 2200 MHz 26 29 33 dB 2200 MHz f 2800 MHz 25 28 31 dB 3400 MHz f 3800 MHz 22 26 30 dB 0.03 0.006 0 dB/C 0.2 - +0.2 dB/V 700 MHz f 2200 MHz 28 31.5 35 dB 2200 MHz f 2800 MHz 27 30.5 34 dB 3400 MHz f 3800 MHz 26 29.5 33 dB 700 MHz f 2800 MHz 0 0.5 1 dB gain variation with temperature G/VSUP gain variation with supply voltage range step attenuation range attenuation step 3400 MHz f 3800 MHz Gp 0 0.5 1.2 dB power gain variation 700 MHz f 3800 MHz [1] 1.5 - +1.5 dB 700 MHz f 2200 MHz [2] (0.5 + 0.025 i) +(0.5 + dB 0.025 i) 2200 MHz f 2800 MHz [2] (0.3 + 0.025 i) +(0.3 + dB 0.025 i) 3400 MHz f 3800 MHz [2] (0.5 + 0.025 i) +(0.5 + dB 0.025 i) - 1 Gp(flat) power gain flatness 700 MHz f 3800 MHz; per 200 MHz RLin input return loss 700 MHz f 3800 MHz 10 - - dB RLout output return loss 700 MHz f 3800 MHz 7 - - dB 2200 MHz f 2800 MHz; Csh = 0.68 pF 10 - - dB NF noise figure - dB minimum attenuation 700 MHz f 2200 MHz - 6.5 8.5 dB 2200 MHz f 2800 MHz - 7 9 dB 3400 MHz f 3800 MHz - 8 10 dB maximum attenuation BGA7210 Product data sheet 700 MHz f 2200 MHz - 27.5 30.5 dB 2200 MHz f 2800 MHz - 28 31 dB 3400 MHz f 3800 MHz - 28.5 32 dB All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 6 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier Table 8. Dynamic characteristics …continued 4.75 V VSUP 5.25 V; 40 C Tamb +85 C; maximum current; input and output terminated with 50 , unless otherwise specified. Symbol IP3O Parameter output third-order intercept point Conditions minimum attenuation Max Unit 700 MHz f 1400 MHz 34 39 - dBm 32 37 - dBm 1700 MHz f 2200 MHz 30 35 - dBm 28 33 - dBm 30 35 - dBm 24 27 - dBm 700 MHz f 1400 MHz - 35 - dBm 1400 MHz f 1700 MHz - 33 - dBm 1700 MHz f 2200 MHz - 31 - dBm - 30 - dBm - 30 - dBm - 25 - dBm 18 21 - dBm 20 23 - dBm 16 19 - dBm 2200 MHz f 2800 MHz; Csh = 0.68 pF [4] 3400 MHz f 3800 MHz maximum attenuation [3] 2200 MHz f 2800 MHz 2200 MHz f 2800 MHz; Csh = 0.68 pF [4] 3400 MHz f 3800 MHz output power at 1 dB gain compression Typ 1400 MHz f 1700 MHz 2200 MHz f 2800 MHz PL(1dB) Min [3] minimum attenuation 700 MHz f 2800 MHz 2200 MHz f 2800 MHz; Csh = 0.68 pF [4] 3400 MHz f 3800 MHz maximum attenuation 700 MHz f 2800 MHz 2200 MHz f 2800 MHz; Csh = 0.68 pF - 20 - dBm [4] - 20 - dBm 3400 MHz f 3800 MHz - 16 - dBm td(pd) power-down delay time [5] - 100 - ns td(pu) power-up delay time [5] - 5 - s attenuation response time [5][ - 100 - ns tresp() [1] 6] Normalized to maximum gain and attenuation [2] i specifies the decimal attenuation step, ranging from 0 to 63. [3] Pi = 12 dBm per tone; f = 10 MHz. [4] See Section 11. [5] To within 0.1 dB of final gain state. [6] After last SPI bit is clocked in. BGA7210 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 7 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier 9. Serial Peripheral Interface 9.1 Command word format The Serial Peripheral Interface (SPI) operates in mode 0. This means that when the SPI is inactive the clock pin is logically LOW. When the SPI interface is active the data is clocked in at the rising edge of the clock pulse; data is clocked out at the negative edge. The control word length is 12 bits (see Figure 2), however the word length can be extended appropriately with trailing zeros (see Figure 3). CLK SS SERIN C1 C0 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 SEROUT C1 C0 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 OLD CURRENT AND ATTENUATION STATE NEW STATE aaa-000659 Fig 2. Timing diagram for 12-bit word CLK SS SERIN C1 C0 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 SEROUT C1 C0 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 OLD CURRENT AND ATTENUATION STATE NEW STATE aaa-000660 Fig 3. Timing diagram for 12-bit word length followed by four ignored trailing bits The word written on the input (SER_IN) will be replicated on the output (SER_OUT) 9.2 Setting current and attenuation The current and attenuation are set by bits D9 to D0 and are preceded by the command bits C0 and C1, which are always set to logic LOW, see Figure 4. If all bits are set to logic LOW (0x000) then current is at maximum and attenuation is at minimum; if all bits are set to logic HIGH (0x3FF) then current is at minimum and attenuation is at maximum. BGA7210 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 8 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier CLK SERIN/OUT SET Fig 4. C1 C0 D9 D8 D7 D6 D5 D4 D3 D2 D1 00 00 ... 11 00 ... 11 000000 ... 111111 command Iamp1 Iamp2 attenuation D0 aaa-000661 Command to set current of the first amplifier (D9, D8); second amplifier (D7, D6) and attenuation (D5, ... , D2) Depending on the attenuation setting the current through the first amplifier and the second amplifier can be optimized, without compromising on linearity. At attenuations less than 9 dB the current in the first amplifier can be reduced with 10 mA; at attenuations equal or larger than 9 dB the current in the second amplifier can be reduced by 15 mA. Table 9. D9, D8 Current reduction (mA) 0x0 0 0x1 10 0x2 20 0x3 30 Table 10. Product data sheet Current second amplifier truth table D7, D6 Current reduction (mA) 0x0 0 0x1 15 0x2 30 0x3 45 Table 11. BGA7210 Current first amplifier truth table Attenuation truth table; major states only D5, D4, D3, D2, D1, D0 Attenuation (dB) 0x00 0 0x01 0.5 0x02 1 0x04 2 0x08 4 0x10 8 0x20 16 0x3F 31.5 All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 9 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier 9.3 SPI timing CLK SERIN/OUT C1 C0 tsu D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 th SS tsu(SS) Fig 5. th(SS) aaa-000662 Timing diagram Table 12. SPI timing 4.75 V VSUP 5.25 V; 40 C Tamb +85 C unless otherwise specified. Symbol Parameter Conditions fSPI SPI frequency tsu set-up time Tcase Min Typ Max Unit 0.1 - 20 MHz 10 - - ns th hold time 10 - - ns tsu(SS) set-up time on pin SS 10 - - ns th(SS) hold time on pin SS 10 + 11 / fSPI - - ns 10. Power-up and power save The PUPMXG/PWRDN pin determines the attenuation and currents at start-up of the chip (see Table 13). After start-up it can be used to power-down the device. PUPMXG/ PWRDN POR STATE UNDEFINED PUPMXG = 1 ON OFF ON OFF ON UNDEFINED PUPMXG = 0 OFF ON OFF ON OFF PUPMXG/ PWRDN POR STATE aaa-000664 Fig 6. PUPMXG/PWRDN Table 13. Power-up truth table PUPMXG/PWRDN BGA7210 Product data sheet Current Attenuation (mA) (dB) 0 120 31.5 1 195 0 All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 10 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier 11. Application information 11.1 Application board A customer application board is available from NXP upon request. It includes USB interface circuitry and customer software to facilitate evaluation of the BGA7210. The final application shall be terminated with 50 and decoupled as depicted in Figure 7. The ground leads and exposed paddle should be connected directly to the ground plane. A sufficient number of via holes should be provided to connect the top and bottom ground planes in the final application board. Sufficient cooling should be provided that the temperature of the exposed die pad does not exceed 85 C. VSUP C23 L1 C22 C26 C12 C25 PUPMXG/ VDDD VCC1 CLK SERIN SS SEROUT PWRDN 24 23 22 21 20 19 17 VDDA 16 C14 C24 C18 15 VCC2 C17 L2 C1 RF_IN 29 12 RF_OUT C27 RF_OUT Csh aaa-000665 See Table 14 for list of components. Fig 7. Schematic representation of the customer evaluation board Table 14. List of components See Figure 7 for schematics. Component Description Value Remarks C1, C27 DC blocking capacitor 100 pF Murata GRM C12 decoupling capacitor 100 nF close to pin 19 C14 decoupling capacitor 100 nF close to pin 17 C17 decoupling capacitor 100 nF close to pin 15 C18 decoupling capacitor 100 nF close to pin 16 C22 optional decoupling capacitor 10 F part of optional ripple filter C23 optional decoupling capacitor 10 F part of optional ripple filter C24 decoupling capacitor 100 pF C25 decoupling capacitor 100 nF BGA7210 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 11 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier Table 14. List of components …continued See Figure 7 for schematics. Component Description Value Remarks C26 decoupling capacitor 4.7 F Csh optional matching capacitor to improve linearity at 2.2 GHz to 2.8 GHz 0.68 pF Murata GRM; shall be located 5.5 mm from pin RF-OUT when using FR4 PCB described below. L1 optional inductor 820 nH part of optional ripple filter L2 inductor 22 nH Murata LQW 18 The recommended FR4 PCB layer stack is described in Figure 8. A 50 coplanar grounded wave guide can be implemented by a 0.48 mm RF track and a clearance between the track and the ground planes of 1 mm on both sides. through via RF and analog routing 0.28 mm FR4 RF and analog ground 0.30 mm core analog routing 0.28 mm FR4 RF and analog ground aaa-000666 r = 4.5; interconnect 35 m copper. Fig 8. BGA7210 Product data sheet Printed-Circuit Board (PCB) layer stack All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 12 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier 11.2 Characteristics aaa-000667 34 S21 (dB) aaa-000668 34 S21 (dB) 30 30 (1) (2) (3) 26 (1) (2) (3) 26 22 22 0 1 2 3 4 5 0 1 f (GHz) VSUP = 5 V; maximum current setting. 5 (1) Tamb = 40 C (2) Tamb = +25 C (3) Tamb = +85 C (3) Tamb = +85 C Maximum power gain as a function of frequency; typical values Product data sheet 4 VSUP = 5 V; maximum current setting and shunt capacitor (Csh). (2) Tamb = +25 C BGA7210 3 f (GHz) (1) Tamb = 40 C Fig 9. 2 Fig 10. Maximum power gain with shunt capacitor as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 13 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier aaa-000669 35 (1) (2) (3) (4) (5) (6) (7) S21 (dB) 25 aaa-000670 40 ∆Gp (dB) 30 15 (1) (2) (3) 20 5 -5 10 0 16 32 48 64 attenuation (decimal) VSUP = 5 V; Tamb = 25 C; maximum current setting. 0 1 2 3 4 5 f (GHz) VSUP = 5 V; maximum current setting. (1) f = 0.7 GHz (1) Tamb = 40 C (2) f = 1.4 GHz (2) Tamb = +25 C (3) f = 1.7 GHz (3) Tamb = +85 C (4) f = 2.2 GHz (5) f = 2.8 GHz (6) f = 2.8 GHz and Csh used (7) f = 3.8 GHz Fig 11. Power gain as a function of attenuation state; typical values BGA7210 Product data sheet Fig 12. Power gain range as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 14 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier aaa-000671 0.0 gain step size (dB) aaa-000672 2 gain accuracy (dB) i ) 5x α .02 0 .5 + -0.2 +(0 1 (8) (6) (4) (3) (2) -0.4 0 -0.6 (1) (2) (3) (4) (5) (6) (7) -0.8 -1 -(0. 5+ 0.0 25 (1) (5) (7) xi α) -2 -1.0 0 16 32 48 64 attenuation (decimal) VSUP = 5 V; Tamb = 25 C; maximum current setting. 0 16 32 48 64 attenuation (decimal) VSUP = 5 V; Tamb = 25 C; maximum current setting. (1) f = 0.7 GHz (1) f = 0.7 GHz; range = 31.5 dB (2) f = 1.4 GHz (2) f = 1.4 GHz; range = 31.5 dB (3) f = 1.7 GHz (3) f = 1.7 GHz; range = 31.5 dB (4) f = 2.2 GHz (4) f = 2.2 GHz; range = 31.5 dB (5) f = 2.8 GHz (5) f = 2.2 GHz; range = 30.5 dB (6) f = 2.8 GHz and Csh used (6) f = 2.8 GHz; range = 30.5 dB (7) f = 3.8 GHz (7) f = 2.8 GHz; range = 29.5 dB (8) f = 3.8 GHz; range = 29.5 dB Fig 13. Gain step size as a function of attenuation state; typical values BGA7210 Product data sheet Fig 14. Power gain accuracy as a function of attenuation state; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 15 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier aaa-000673 -5 S11 (dB) aaa-000674 -5 S22 (dB) -15 -15 (1) (2) (3) -25 -25 (1) (2) (3) -35 -35 0 1 2 3 4 5 0 1 2 3 4 f (GHz) VSUP = 5 V; maximum current setting; minimum attenuation. VSUP = 5 V; maximum current setting; minimum attenuation. (1) Tamb = 40 C (1) Tamb = 40 C (2) Tamb = +25 C (2) Tamb = +25 C (3) Tamb = +85 C (3) Tamb = +85 C Fig 15. Input return loss as a function of frequency; typical values BGA7210 Product data sheet 5 f (GHz) Fig 16. Output return loss as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 16 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier aaa-000675 0 (1) (2) (3) (4) (5) (6) (7) (8) S11 (dB) -10 -20 aaa-000676 0 S22 (dB) -10 (1) (2) (3) (4) (5) (6) (7) (8) -20 -30 -30 -40 -40 -50 -50 0 1 2 3 4 5 0 1 2 3 f (GHz) VSUP = 5 V; Tamb = 25 C; maximum current setting. VSUP = 5 V; Tamb = 25 C; maximum current setting. (1) attenuation = 0x00 (minimum) (2) attenuation = 0x01 (2) attenuation = 0x01 (3) attenuation = 0x02 (3) attenuation = 0x02 (4) attenuation = 0x04 (4) attenuation = 0x04 (5) attenuation = 0x08 (5) attenuation = 0x08 (6) attenuation = 0x10 (6) attenuation = 0x10 (7) attenuation = 0x20 (7) attenuation = 0x20 (8) attenuation = 0x3F (maximum) (8) attenuation = 0x3F (maximum) Fig 17. Input return loss as a function of frequency; typical values Product data sheet 5 f (GHz) (1) attenuation = 0x00 (minimum) BGA7210 4 Fig 18. Output return loss as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 17 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier aaa-000677 0 S11 (dB) aaa-000678 0 S22 (dB) -10 -10 -20 (1) (2) (3) (4) (5) (6) (7) (8) -20 -30 -30 (1) (2) (3) (4) (5) (6) (7) (8) -40 -40 -50 -50 0 1 2 3 4 5 0 1 2 3 f (GHz) VSUP = 5 V; Tamb = 25 C; maximum current setting and shunt capacitor (Csh). (1) attenuation = 0x00 (minimum) (1) attenuation = 0x00 (minimum) (2) attenuation = 0x01 (2) attenuation = 0x01 (3) attenuation = 0x02 (3) attenuation = 0x02 (4) attenuation = 0x04 (4) attenuation = 0x04 (5) attenuation = 0x08 (5) attenuation = 0x08 (6) attenuation = 0x10 (6) attenuation = 0x10 (7) attenuation = 0x20 (7) attenuation = 0x20 (8) attenuation = 0x3F (maximum) (8) attenuation = 0x3F (maximum) Fig 19. Input return loss with shunt capacitor as a function of frequency; typical values Product data sheet 5 f (GHz) VSUP = 5 V; Tamb = 25 C; maximum current setting and shunt capacitor (Csh). BGA7210 4 Fig 20. Output return loss with shunt capacitor as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 18 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier aaa-000679 45 IP3o (dBm) aaa-000680 45 IP3o (dBm) 35 35 (1) (2) (3) (4) (5) (6) (7) 25 (1) (2) (3) (4) (5) (6) (7) 25 15 15 0 16 32 48 64 attenuation (decimal) VSUP = 5 V; Tamb = 40 C; maximum current setting. 0 16 32 VSUP = 5 V; Tamb = 25 C; maximum current setting. (1) f = 0.7 GHz (1) f = 0.7 GHz (2) f = 1.4 GHz (2) f = 1.4 GHz (3) f = 1.7 GHz (3) f = 1.7 GHz (4) f = 2.2 GHz (4) f = 2.2 GHz (5) f = 2.8 GHz (5) f = 2.8 GHz (6) f = 2.8 GHz and Csh used (6) f = 2.8 GHz and Csh used (7) f = 3.8 GHz (7) f = 3.8 GHz Fig 21. Output third-order intercept point as a function of attenuation state; typical values BGA7210 Product data sheet 48 64 attenuation (decimal) Fig 22. Output third-order intercept point as a function of attenuation state; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 19 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier aaa-000682 45 IP3o (dBm) aaa-000683 45 IP3o (dBm) 35 (1) (2) (3) (4) (5) (6) (7) 35 (1) (2) (3) (4) (5) (6) (7) 25 25 15 15 0 16 32 48 64 attenuation (decimal) VSUP = 5 V; Tamb = 85 C; maximum current setting. 0 16 32 VSUP = 5 V; Tamb = 25 C; minimal current setting. (1) f = 0.7 GHz (1) f = 0.7 GHz (2) f = 1.4 GHz (2) f = 1.4 GHz (3) f = 1.7 GHz (3) f = 1.7 GHz (4) f = 2.2 GHz (4) f = 2.2 GHz (5) f = 2.8 GHz (5) f = 2.8 GHz (6) f = 2.8 GHz and Csh used (6) f = 2.8 GHz and Csh used (7) f = 3.8 GHz (7) f = 3.8 GHz Fig 23. Output third-order intercept point as a function of attenuation state; typical values BGA7210 Product data sheet 48 64 attenuation (decimal) Fig 24. Output third-order intercept point as a function of attenuation state; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 20 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier aaa-000685 45 IP3o (dBm) aaa-000687 45 IP3o (dBm) 35 35 (1) (2) (3) (4) (5) (6) (7) 25 15 -30 (1) (2) (3) (6) (4) (5) (7) 25 -20 -10 0 relative current through first amplifier (mA) VSUP = 5 V; Tamb = 25 C; maximum gain; maximum current through second amplifier. 15 -50 -40 -30 -20 -10 0 relative current through second amplifier (mA) VSUP = 5 V; Tamb = 25 C; maximum gain; maximum current through first amplifier. (1) f = 0.7 GHz (1) f = 0.7 GHz (2) f = 1.4 GHz (2) f = 1.4 GHz (3) f = 1.7 GHz (3) f = 1.7 GHz (4) f = 2.2 GHz (4) f = 2.2 GHz (5) f = 2.8 GHz (5) f = 2.8 GHz (6) f = 2.8 GHz and Csh used (6) f = 2.8 GHz and Csh used (7) f = 3.8 GHz (7) f = 3.8 GHz Fig 25. Output third-order intercept point as a function of relative current through first amplifier; typical values BGA7210 Product data sheet Fig 26. Output third-order intercept point as a function of relative current through second amplifier; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 21 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier aaa-000689 45 (1) (2) (3) (4) (5) (6) (7) IP3o (dBm) 35 aaa-000690 45 IP3o (dBm) (1) 35 (2) (3) (6) (4) (5) 25 25 (7) 15 -30 -20 -10 0 relative current through first amplifier (mA) VSUP = 5 V; Tamb = 25 C; minimum gain; maximum current through second amplifier. 15 -50 -40 -30 -20 -10 0 relative current through second amplifier (mA) VSUP = 5 V; Tamb = 25 C; minimum gain; maximum current through first amplifier. (1) f = 0.7 GHz (1) f = 0.7 GHz (2) f = 1.4 GHz (2) f = 1.4 GHz (3) f = 1.7 GHz (3) f = 1.7 GHz (4) f = 2.2 GHz (4) f = 2.2 GHz (5) f = 2.8 GHz (5) f = 2.8 GHz (6) f = 2.8 GHz and Csh used (6) f = 2.8 GHz and Csh used (7) f = 3.8 GHz (7) f = 3.8 GHz Fig 27. Output third-order intercept point as a function of relative current through first amplifier; typical values BGA7210 Product data sheet Fig 28. Output third-order intercept point as a function of relative current through second amplifier; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 22 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier aaa-000692 200 Itot (mA) aaa-000693 45 IP3o (dBm) 190 (1) (2) (2) (3) 35 (1) (4) 180 25 170 160 15 0 16 32 48 64 attenuation (decimal) 0 VSUP = 5 V; Tamb = 25 C. 16 32 48 64 attenuation (decimal) VSUP = 5 V; Tamb = 25 C; f = 2.8 GHz. (1) IAMP1 / IAMP2 = 0 mA / 15 mA (1) IAMP1 / IAMP2 = Iopt (2) IAMP1 / IAMP2 = 10 mA / 0 mA (2) IAMP1 / IAMP2 = 0 mA / 0 mA (3) IAMP1 / IAMP2 = 0 mA / 15 mA (4) IAMP1 / IAMP2 = 10 mA / 0 mA Fig 29. Total current as a function of attenuation state optimized for IP3O; typical values aaa-000694 200 Itot (mA) Fig 30. Output third-order intercept point as a function of attenuation state; typical values aaa-000695 200 Itot (mA) (1) 190 (1) 190 (2) 180 180 (2) (3) 170 170 (3) (4) 160 160 150 -40 150 -40 (4) -15 10 35 60 85 Tamb (°C) VSUP = 5 V; maximum current through second amplifier. -15 (1) IAMP2 = 0 mA (2) IAMP1 = 10 mA (2) IAMP2 = 10 mA (3) IAMP1 = 20 mA (3) IAMP2 = 20 mA (4) IAMP1 = 30 mA (4) IAMP2 = 30 mA BGA7210 Product data sheet 35 60 85 Tamb (°C) VSUP = 5 V; maximum current through first amplifier. (1) IAMP1 = 0 mA Fig 31. Total current as a function of ambient temperature; typical values 10 Fig 32. Total current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 23 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier aaa-000696 25 PL(1dB) (dBm) aaa-000697 40 (8) relative phase (deg) 23 30 21 20 (7) 19 10 (1) (2) (3) (4) (5) (6) (7) 17 (6) (5) (4) 0 (1) (2) (3) 15 -10 0 16 32 48 64 attenuation (decimal) VSUP = 5 V; Tamb = 85 C; maximum current setting; attenuation states 0, 7, 15, 23, 31, 39, 47, 55 and 63 are depicted. (1) f = 0.7 GHz 2 3 4 5 f (GHz) VSUP = 5 V; Tamb = 25 C; maximum current setting. (1) attenuation = 0x00 (minimum) (2) attenuation = 0x01 (4) attenuation = 0x04 (3) f = 1.7 GHz (5) attenuation = 0x08 (4) f = 2.2 GHz (6) attenuation = 0x10 (5) f = 2.8 GHz (7) attenuation = 0x20 (6) f = 2.8 GHz and Csh used (8) attenuation = 0x3F (maximum) (7) f = 3.8 GHz Fig 33. Output power at 1 dB gain compression as a function of attenuation state; typical values Product data sheet 1 (3) attenuation = 0x02 (2) f = 1.4 GHz BGA7210 0 Fig 34. Relative phase as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 24 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier aaa-000698 35 aaa-000699 10 NF (dB) NF (dB) 8 25 10 +7 0% xα 6 (1) (2) (3) (4) (5) (6) (7) 15 5 (1) (2) (3) 4 2 -5 0 0 16 32 48 64 attenuation (decimal) VSUP = 5 V; Tamb = 25 C; maximum current setting. (1) f = 0.7 GHz 0 1 2 3 4 5 f (GHz) VSUP = 5 V; maximum gain and maximum current setting. (2) f = 1.4 GHz (1) Tamb = 40 C (3) f = 1.7 GHz (2) Tamb = +25 C (4) f = 2.2 GHz (3) Tamb = +85 C (5) f = 2.8 GHz (6) f = 2.8 GHz and Csh used (7) f = 3.8 GHz Fig 35. Noise figure as a function of attenuation state; typical values BGA7210 Product data sheet Fig 36. Noise figure as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 25 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier 12. Package outline HVQFN32: plastic thermal enhanced very thin quad flat package; no leads; 32 terminals; body 5 x 5 x 0.85 mm D B SOT617-3 A terminal 1 index area A A1 E detail X C e1 e 9 y1 C C A B C v w 1/2 e b y 16 L 17 8 e e2 Eh 1/2 e 24 1 terminal 1 index area 32 25 X Dh 0 2.5 Dimensions Unit(1) mm 5 mm scale A(1) A1 b max 0.05 0.30 nom 0.85 min 0.00 0.18 c D(1) Dh E(1) Eh 5.1 3.75 5.1 3.75 0.2 4.9 3.45 4.9 e e1 e2 0.5 3.5 3.5 L v w y y1 0.5 0.1 0.05 0.05 0.1 0.3 3.45 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. Outline version SOT617-3 References IEC JEDEC JEITA sot617-3_po European projection Issue date 11-06-14 11-06-21 MO-220 Fig 37. Package outline SOT617-3 (HVQFN32) BGA7210 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 26 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier 13. Packing information The BGA7210 will be delivered in reel pack SMD 7”, 1500 pieces per reel. aaa-000870 Fig 38. Carrier tape 14. Abbreviations Table 15. Abbreviations Acronym Description CDM Charged Device Model ESD ElectroStatic Discharge DSA Digital Step Attenuator HBM Human Body Model IF Intermediate Frequency MMIC Monolithic Microwave Integrated Circuit POR Power-On Reset RF Radio Frequency SPI Serial Peripheral Interface USB Universal Serial Bus WiMAX Worldwide Interoperability for Microwave Access 15. Revision history Table 16. Revision history Document ID Release date Data sheet status Change notice Supersedes BGA7210 v.2 20120104 Product data sheet - BGA7210 v.1 Modifications BGA7210 v.1 BGA7210 Product data sheet • Preliminary data sheet changed to Product data sheet 20111213 Preliminary data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 - © NXP B.V. 2012. All rights reserved. 27 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 16.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BGA7210 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 28 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BGA7210 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 January 2012 © NXP B.V. 2012. All rights reserved. 29 of 30 BGA7210 NXP Semiconductors 700 MHz to 3800 MHz high linearity variable gain amplifier 18. Contents 1 1.1 1.2 1.3 1.4 2 2.1 2.2 3 4 5 6 7 8 9 9.1 9.2 9.3 10 11 11.1 11.2 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 Serial Peripheral Interface . . . . . . . . . . . . . . . . 8 Command word format . . . . . . . . . . . . . . . . . . . 8 Setting current and attenuation . . . . . . . . . . . . 8 SPI timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Power-up and power save. . . . . . . . . . . . . . . . 10 Application information. . . . . . . . . . . . . . . . . . 11 Application board . . . . . . . . . . . . . . . . . . . . . . 11 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 26 Packing information . . . . . . . . . . . . . . . . . . . . 27 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 27 Legal information. . . . . . . . . . . . . . . . . . . . . . . 28 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 28 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Contact information. . . . . . . . . . . . . . . . . . . . . 29 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 4 January 2012 Document identifier: BGA7210