TI UCC28740DR

UCC28740
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SLUSBF3A – JULY 2013 – REVISED JULY 2013
Constant-Voltage Constant-Current Flyback Controller Using Opto-Coupled Feedback
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FEATURES
DESCRIPTION
•
•
The UCC28740 isolated-flyback power-supply
controller provides Constant-Voltage (CV) using an
optical coupler to improve transient response to largeload steps. Constant-Current (CC) regulation is
accomplished through Primary-side Regulation (PSR)
techniques. This device processes information from
opto-coupled feedback and an auxiliary flyback
winding for precise high-performance control of
output voltage and current.
1
•
•
•
•
•
•
•
•
Less than 10-mW No-Load Power Capability
Opto-Coupled Feedback for CV, and
Primary-Side Regulation (PSR) for CC
Enables ±1% Voltage Regulation and ±5%
Current Regulation Across Line and Load
700-V Startup Switch
100-kHz Maximum Switching Frequency
Enables High-Power-Density Charger Designs
Resonant-Ring Valley-Switching Operation for
Highest Overall Efficiency
Frequency Dithering to Ease EMI Compliance
Clamped Gate-Drive Output for MOSFET
Overvoltage, Low-Line, and Overcurrent
Protection Functions
SOIC-7 Package
APPLICATIONS
•
•
•
USB-Compliant Adapters and Chargers for
Consumer Electronics
– Smart Phones
– Tablet Computers
– Cameras
Standby Supply for TV and Desktop
White Goods
SIMPLIFIED APPLICATION DIAGRAM
An internal 700-V startup switch, dynamicallycontrolled operating states, and a tailored modulation
profile support ultra-low standby power without
sacrificing startup time or output transient response.
Control algorithms in the UCC28740 allow operating
efficiencies to meet or exceed applicable standards.
The drive output interfaces to a MOSFET power
switch. Discontinuous conduction mode (DCM) with
valley-switching reduces switching losses. Modulation
of switching frequency and primary current-peak
amplitude (FM and AM) keeps the conversion
efficiency high across the entire load and line ranges.
The controller has a maximum switching frequency of
100 kHz and always maintains control of the peakprimary current in the transformer. Protection features
keep primary and secondary component stresses in
check. A minimum switching frequency of 170 Hz
facilitates the achievement of less than 10-mW noload power.
TYPICAL V-I DIAGRAM
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated
UCC28740
SLUSBF3A – JULY 2013 – REVISED JULY 2013
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PRODUCT INFORMATION (1)
(1)
PACKAGE
PINS
ORDERABLE
DEVICES
MINIMUM SWITCHING
FREQUENCY (Hz)
SOIC (D)
7
UCC28740D
170
OPTIONS
See Orderable Addendum for specific device ordering information.
ABSOLUTE MAXIMUM RATINGS (1)
MIN
MAX
Start-up pin voltage, HV
VHV
700
Bias supply voltage, VDD
VVDD
38
Continuous gate-current sink
IDRV
50
Continuous gate-current source
IDRV
Self-limiting
Peak current, VS
IFB
Peak current, FB
IVS
Gate-drive voltage at DRV
VDRV
−0.5
Self-limiting
CS
−0.5
5
FB
−0.5
7
VS
Voltage range
1
−0.75
7
TJ
−55
150
Storage temperature
TSTG
−65
150
ESD rating
(1)
2
V
mA
−1.2
Operating junction temperature range
Lead temperature 0.6 mm from case for 10 seconds
UNIT
V
°C
260
Human-body model (HBM)
Charged-device model (CDM)
2000
500
V
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages
are with respect to GND. Currents are positive into, negative out of the specified terminal. These ratings apply over the operating
ambient temperature ranges unless otherwise noted.
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RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
VVDD
Bias-supply operating voltage
CVDD
VDD bypass capacitor
IFB
Feedback current, continuous
IVS
VS pin current, out of pin
TJ
Operating junction temperature
TYP
MAX
9
UNIT
35
V
0.047
µF
−20
50
µA
1
mA
125
°C
THERMAL INFORMATION
UCC28740
THERMAL METRIC (1)
D
UNITS
7 PINS
θJA
Junction-to-ambient thermal resistance (2)
141.5
θJCtop
Junction-to-case (top) thermal resistance (3)
73.8
θJB
Junction-to-board thermal resistance (4)
89.0
ψJT
Junction-to-top characterization parameter (5)
23.5
ψJB
Junction-to-board characterization parameter (6)
88.2
(1)
(2)
(3)
(4)
(5)
(6)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDECstandard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
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ELECTRICAL CHARACTERISTICS
over operating free-air temperature range, VVDD = 25 V, HV = open, VFB = 0 V, VVS = 4 V, TA = –40°C to +125°C, TJ = TA
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
HIGH-VOLTAGE START UP
IHV
Start-up current out of VDD
VHV = 100 V, VVDD = 0 V, start state
IHVLKG25
Leakage current at HV
VHV = 400 V, run state, TJ = 25°C
100
250
500
0.01
0.5
µA
BIAS SUPPLY INPUT
IRUN
Supply current, run
IDRV = 0, run state
2
2.65
IWAIT
Supply current, wait
IDRV = 0, wait state
95
125
ISTART
Supply current, start
IDRV = 0, VVDD = 18 V, start state, IHV = 0
18
30
IFAULT
Supply current, fault
IDRV = 0, fault state
95
130
mA
µA
UNDERVOLTAGE LOCKOUT
VVDD(on)
VDD turnon threshold
VVDD low to high
19
21
23
VVDD(off)
VDD turnoff threshold
VVDD high to low
7.35
7.75
8.15
VVSNC
Negative clamp level
IVSLS = –300 µA, volts below ground
190
250
325
mV
IVSB
Input bias current
VVS = 4 V
–0.25
0
0.25
µA
IFBMAX
Full-range input current
fSW = fSW(min)
VFBMAX
Input voltage at full range
IFB = 25 µA, TJ = 25°C
FB-input resistance, linearized
ΔIFB = 20 µA, centered at IFB = 15 µA, TJ =
25°C
Maximum CS threshold voltage
IFB = 0 µA (1)
V
VS INPUT
FB INPUT
RFB
16
23
30
µA
0.75
0.88
1
V
10
14
18
kΩ
738
773
810
170
194
215
CS INPUT
VCST(max)
(1)
mV
VCST(min)
Minimum CS threshold voltage
IFB = 35 µA
KAM
AM-control ratio
VCST(max) / VCST(min)
VCCR
Constant-current regulation factor
KLC
Line-compensation current ratio
IVSLS = –300 µA, IVSLS / current out of CS pin
tCSLEB
Leading-edge blanking time
DRV output duration, V CS = 1 V
IDRS
DRV source current
VDRV = 8 V, VVDD = 9 V
RDRVLS
DRV low-side drive resistance
IDRV = 10 mA
6
12
VDRCL
DRV clamp voltage
VVDD = 35 V
14
16
V
RDRVSS
DRV pulldown in start-state
150
190
230
kΩ
3.6
4
4.45
318
330
343
V/V
mV
24
25
28.6
A/A
180
230
280
ns
20
25
DRIVERS
mA
Ω
TIMING
fSW(max)
Maximum switching frequency
IFB = 0 µA (1)
91
100
106
kHz
fSW(min)
Minimum switching frequency
IFB = 35 µA (1)
140
170
210
Hz
tZTO
Zero-crossing timeout delay
1.8
2.1
2.55
µs
(1)
4
This device automatically varies the control frequency and current sense thresholds to improve EMI performance. These threshold
voltages and frequency limits represent average levels.
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ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range, VVDD = 25 V, HV = open, VFB = 0 V, VVS = 4 V, TA = –40°C to +125°C, TJ = TA
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
PROTECTION
VOVP
Overvoltage threshold
At VS input, TJ = 25°C (2)
4.52
4.6
4.71
VOCP
Overcurrent threshold
At CS input
1.4
1.5
1.6
IVSL(run)
VS line-sense run current
Current out of VS pin increasing
190
225
275
IVSL(stop)
VS line-sense stop current
Current out of VS pin decreasing
70
80
100
KVSL
VS line sense ratio
IVSL(run) / IVSL(stop)
2.8
3.05
TJ(stop)
Thermal-shutdown temperature
Internal junction temperature
(2)
2.45
165
V
µA
A/A
°C
The overvoltage threshold level at VS decreases with increasing temperature by 0.8 mV/°C. This compensation is included to reduce the
power-supply output overvoltage detection variance over temperature.
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DEVICE INFORMATION
Functional Block Diagram
Figure 1. Functional Block Diagram
6
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SOIC (D) PACKAGE
7 PINS
(TOP VIEW)
PIN FUNCTIONS
PIN
NAME
NO.
I/O
DESCRIPTION
CS
5
I
The current-sense (CS) input connects to a ground-referenced current-sense resistor in series with
the power switch. The resulting voltage monitors and controls the peak primary current. A series
resistor is added to this pin to compensate for peak switch-current levels as the AC-mains input
varies.
DRV
6
O
Drive (DRV) is an output that drives the gate of an external high-voltage MOSFET switching
transistor.
FB
3
I
The feedback (FB) input receives a current signal from the optocoupler output transistor. An internal
current mirror divides the feedback current by 2.5 and applies it to an internal pullup resistor to
generate a control voltage, VCL. The voltage at this resistor directly drives the control law function,
which determines the switching frequency and the peak amplitude of the switching current .
GND
4
—
HV
7
I
The high-voltage (HV) pin may connect directly, or through a series resistor, to the rectified bulk
voltage and provides a charge to the VDD capacitor for the startup of the power supply.
VDD
1
I
VDD is the bias-supply input pin to the controller. A carefully-placed bypass capacitor to GND is
required on this pin.
I
Voltage sense (VS) is an input used to provide demagnetization timing feedback to the controller to
limit frequency, to control constant-current operation, and to provide output-overvoltage detection. VS
is also used for AC-mains input-voltage detection for peak primary-current compensation. This pin
connects to a voltage divider between an auxiliary winding and GND. The value of the upper resistor
of this divider programs the AC-mains run and stop thresholds, and factors into line compensation at
the CS pin.
VS
2
The ground (GND) pin is both the reference pin for the controller, and the low-side return for the drive
output. Special care must be taken to return all AC-decoupling capacitors as close as possible to this
pin and avoid any common trace length with analog signal-return paths.
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Detailed Pin Description
VDD (Device Bias Voltage Supply) The VDD pin connects to a bypass capacitor-to-ground. The turnon UVLO
threshold is 21 V and turnoff UVLO threshold is 7.75 V with an available operating range up to 35 V on
VDD. The typical USB-charging specification requires the output current to operate in constant-current
mode from 5 V down to at least 2 V which is achieved easily with a nominal VVDD of approximately 25 V.
The additional VDD headroom up to 35 V allows for VVDD to rise due to the leakage energy delivered to
the VDD capacitor during high-load conditions.
GND (Ground) UCC28740 has a single ground reference external to the device for the gate-drive current and
analog signal reference. Place the VDD-bypass capacitor close to GND and VDD with short traces to
minimize noise on the VS, FB, and CS signal pins.
HV (High-Voltage Startup) The HV pin connects directly to the bulk capacitor to provide a startup current to the
VDD capacitor. The typical startup current is approximately 250 µA which provides fast charging of the
VDD capacitor. The internal HV startup device is active until VVDD exceeds the turnon UVLO threshold of
21 V at which time the HV startup device turns off. In the off state the HV leakage current is very low to
minimize standby losses of the controller. When VVDD falls below the 7.75 V UVLO turnoff threshold the
HV startup device turns on.
VS (Voltage Sense) The VS pin connects to a resistor-divider from the auxiliary winding to ground. The auxiliary
voltage waveform is sampled at the end of the transformer secondary-current demagnetization time to
provide accurate control of the output current when in constant-current mode. The waveform on the VS
pin determines the timing information to achieve valley-switching, and the timing to control the duty-cycle
of the transformer secondary current. Avoid placing a filter capacitor on this input which interferes with
accurate sensing of this waveform.
During the MOSFET on-time, this pin also senses VS current generated through RS1 by the reflected bulkcapacitor voltage to provide for AC-input run and stop thresholds, and to compensate the current-sense
threshold across the AC-input range. For the AC-input run/stop function, the run threshold on VS is 225
µA and the stop threshold is 80 µA.
At the end of off-time demagnetization, the reflected output voltage is sampled at this pin to provide output
overvoltage protection. The values for the auxiliary voltage-divider upper-resistor, RS1, and lower-resistor,
RS2, are determined by Equation 1 and Equation 2.
where
•
•
•
NPA is the transformer primary-to-auxiliary turns-ratio,
VIN(run) is the AC RMS voltage to enable turnon of the controller (run),
(in case of DC input, leave out the √2 term in the equation),
IVSL(run) is the run-threshold for the current pulled out of the VS pin during the switch on-time (see
ELECTRICAL CHARACTERISTICS).
(1)
VOV is the maximum allowable peak voltage at the converter output,
VF is the output-rectifier forward drop at near-zero current,
NAS is the transformer auxiliary-to-secondary turns-ratio,
RS1 is the VS divider high-side resistance,
VOVP is the overvoltage detection threshold at the VS input (see ELECTRICAL CHARACTERISTICS).
(2)
where
•
•
•
•
•
8
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FB (Feedback) The FB pin connects to the emitter of an analog-optocoupler output transistor which usually has
the collector connected to VDD. The current supplied to FB by the optocoupler is reduced internally by a
factor of 2.5 and the resulting current is applied to an internal 480-kΩ resistor to generate the control law
voltage (VCL). This VCL directly determines the converter switching frequency and peak primary current
required for regulation per the control-law for any given line and load condition.
DRV (Gate Drive) The DRV pin connects to the MOSFET gate pin, usually through a series resistor. The gate
driver provides a gate-drive signal limited to 14 V. The turnon characteristic of the driver is a 25-mA
current source which limits the turnon dv/dt of the MOSFET drain and reduces the leading-edge current
spike while still providing a gate-drive current to overcome the Miller plateau. The gate-drive turnoff
current is determined by the RDSON of the low-side driver along with any external gate-drive resistance.
Adding external gate resistance reduces the MOSFET drain turn-off dv/dt, if necessary.
CS (Current Sense) The current-sense pin connects through a series resistor (RLC) to the current-sense resistor
(RCS). The maximum current-sense threshold (VCST(max)) is 0.773 V for IPP(max), and the minimum currentsense threshold (VCST(min)) is 0.194 V for IPP(min). RLC provides the feed-forward line compensation to
eliminate changes in IPP with input voltage due to the propagation delay of the internal comparator and
MOSFET turnoff time. An internal leading-edge blanking time of 235 ns eliminates sensitivity to the
MOSFET turnon current spike. Placing a bypass capacitor on the CS pin is unnecessary. The target
output current in constant-current (CC) regulation determines the value of RCS. The values of RCS and RLC
are calculated using Equation 3 and Equation 4. The term VCCR is the product of the demagnetization
constant, 0.425, and VCST(max). VCCRis held to a tighter accuracy than either of its constituent terms. The
term ηXFMR accounts for the energy stored in the transformer but not delivered to the secondary. This term
includes transformer resistance and core loss, bias power, and primary-to-secondary leakage ratio.
Example:
With a transformer core and winding loss of 5%, primary-to-secondary leakage inductance of 3.5%, and bias
power to output power ratio of 0.5%, the ηXFMR value at full power is approximately: 1 - 0.05 - 0.035 - 0.005 =
0.91.
V
´ NPS
RCS = CCR
´ hXFMR
2IOCC
where
•
•
•
•
RLC =
VCCR is a constant-current regulation factor (see ELECTRICAL CHARACTERISTICS),
NPS is the transformer primary-to-secondary turns-ratio (a ratio of 13 to 15 is typical for 5-V output),
IOCC is the target output current in constant-current regulation,
ηXFMR is the transformer efficiency at full power.
(3)
KLC ´ RS1 ´ RCS ´ tD ´ NPA
LP
where
•
•
•
•
•
•
RS1 is the VS pin high-side resistor value,
RCS is the current-sense resistor value,
tD is the total current-sense delay consisting of MOSFET turnoff delay, plus approximately 50 ns internal delay,
NPA is the transformer primary-to-auxiliary turns-ratio,
LP is the transformer primary inductance,
KLC is a current-scaling constant for line compensation (see ELECTRICAL CHARACTERISTICS).
(4)
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TYPICAL CHARACTERISTICS
VVDD = 25 V, TJ = 25°C, unless otherwise noted.
10
10
HV = Open
Run State
HV = Open
IRUN, VDD = 25 V
1
IVDD - Bias-Supply Current (mA)
IVDD - Bias-Supply Current (mA)
1
Wait State
0.1
VDD Turn-Off
VDD Turn-On
0.01
Start State
0.001
IWAIT, VDD = 25 V
0.1
ISTART, VDD = 18 V
0.01
0.001
0.0001
0.0001
0
5
10
15
20
25
30
35
-50
-25
0
VDD - Bias-Supply Voltage (V)
25
50
TJ - Temperature
75
100
125
(oC)
C001
C002
Figure 2. Bias-Supply Current vs. Bias-Supply Voltage
Figure 3. Bias-Supply Current vs. Temperature
320
300
VHV = 100 V, VVDD = 0 V
280
IVSL(run)
240
VS Line-Sense Current (µA)
IHV - HV Startup Current (µA)
250
200
160
120
200
150
100
IVSL(stop)
80
50
40
0
0
-50
-25
0
25
50
TJ - Temperature
75
100
125
-50
-25
0
25
50
TJ - Temperature
(oC)
75
100
C003
Figure 4. HV Startup Current vs. Temperature
10
125
(oC)
C004
Figure 5. VS Line-Sense Currents vs. Temperature
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TYPICAL CHARACTERISTICS (continued)
VVDD = 25 V, TJ = 25°C, unless otherwise noted.
350
VCCR - Constant-Current Regulation Factor (mV)
VCST(min) - Minimum CS Threshold Voltage (mV)
210
205
200
195
190
185
180
175
170
345
340
335
330
325
320
315
310
-50
-25
0
25
50
TJ - Temperature
75
100
125
-50
-25
0
25
(oC)
50
75
100
125
TJ - Temperature (oC)
C005
C006
Figure 6. Minimum CS Threshold vs. Temperature
Figure 7. Constant-Current Regulation Factor vs.
Temperature
34
200
32
190
IDRS - DRV Source Current (mA)
fSW(min) - Minimum Switching Frequency (Hz)
VDRV = 8 V, VVDD = 9 V
180
170
160
150
30
28
26
24
22
140
20
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
TJ - Temperature (oC)
TJ - Temperature (oC)
C007
Figure 8. Minimum Switching Frequency vs. Temperature
C008
Figure 9. DRV Source Current vs. Temperature
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TYPICAL CHARACTERISTICS (continued)
VVDD = 25 V, TJ = 25°C, unless otherwise noted.
1.0
4.68
0.9
4.66
VOVP - VS Overvoltage Threshold (V)
VFB - FB Input Voltage (V)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
4.64
4.62
4.60
4.58
4.56
4.54
0.1
0.0
4.52
0
5
10
15
20
25
30
35
-50
IFB - FB Input Current (µA)
-25
0
25
50
75
100
125
TJ - Temperature (oC)
C009
Figure 10. FB Input Voltage vs. FB Input Current
12
C010
Figure 11. VS Overvoltage Threshold vs. Temperature
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FUNCTIONAL DESCRIPTION
The UCC28740 is a flyback power-supply controller which provides high-performance voltage regulation using an
optically-coupled feedback signal from a secondary-side voltage regulator. The device provides accurate
constant-current regulation using primary-side feedback. The controller operates in discontinuous-conduction
mode (DCM) with valley-switching to minimize switching losses. The control law scheme combines frequency
with primary peak-current amplitude modulation to provide high conversion efficiency across the load range. The
control law provides a wide dynamic operating range of output power which allows the power-supply designer to
easily achieve less than 30-mW standby power dissipation using a standard shunt-regulator and optocoupler. For
a target of less than 10-mW standby power, careful loss-management design with a low-power regulator and
high-CTR optocoupler is required.
During low-power operating conditions, the power-management features of the controller reduce the deviceoperating current at switching frequencies below 32 kHz. At and above this frequency, the UCC28740 includes
features in the modulator to reduce the EMI peak energy of the fundamental switching frequency and harmonics.
A complete low-cost and low component-count charger-solution is realized using a straight-forward design
process.
Secondary-Side Optically-Coupled Constant-Voltage (CV) Regulation
Figure 12 shows a simplified flyback convertor with the main output-regulation blocks of the device shown, along
with typical implementation of secondary-side-derived regulation. The power-train operation is the same as any
DCM-flyback circuit. A feedback current is optically coupled to the controller from a shunt-regulator sensing the
output voltage.
Figure 12. Simplified Flyback Convertor
(With The Main Voltage Regulation Blocks)
In this configuration, a secondary-side shunt-regulator, such as the TL431, generates a current through the input
photo-diode of an optocoupler. The photo-transistor delivers a proportional current that is dependent on the
current-transfer ratio (CTR) of the optocoupler to the FB input of the UCC28740 controller. This FB current then
converts into the VCL by the input-mirror network, detailed in the device block diagram (see Figure 1). Outputvoltage variations convert to FB-current variations. The FB-current variations modify the VCL which dictates the
appropriate IPP and fSW necessary to maintain CV regulation. At the same time, the VS input senses the auxiliary
winding voltage during the transfer of transformer energy to the secondary output to monitor for an output
overvoltage condition. When fSW reaches the target maximum frequency, chosen between 32 kHz and 100 kHz,
CC operation is entered and further increases in VCL have no effect.
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Figure 13 shows that as the secondary current decreases to zero, a clearly-defined down slope reflects the
decreasing rectifier VF combined with stray resistance voltage-drop (ISRS). To achieve an accurate representation
of the secondary output voltage on the auxiliary winding, the discriminator reliably blocks the leakage-inductance
reset and ringing while continuously sampling the auxiliary voltage during the down slope after the ringing
diminishes. The discriminator then captures the voltage signal at the moment that the secondary-winding current
reaches zero. The internal overvoltage threshold on VS is 4.6 V. Temperature compensation of –0.8 mV/°C on
the overvoltage threshold offsets the change in the output-rectifier forward voltage with temperature. The resistor
divider is selected as outlined in the VS pin description (see Detailed Pin Description).
Figure 13. Auxiliary-Winding Voltage
The UCC28740 VS-signal sampler includes signal-discrimination methods to ensure an accurate sample of the
output voltage from the auxiliary winding. Controlling some details of the auxiliary-winding signal to ensure
reliable operation is necessary; specifically, the reset time of the leakage inductance and the duration of any
subsequent leakage-inductance ringing. See Figure 14 for a detailed illustration of waveform criteria to ensure a
reliable sample on the VS pin.
The first detail to examine is the duration of the leakage-inductance reset pedestal, tLK_RESET, in Figure 14.
Because tLK_RESET mimics the waveform of the secondary-current decay, followed by a sharp downslope,
tLK_RESET is internally blanked for a duration which scales with the peak primary current. Keeping the leakagereset time to less than 600 ns for IPP(min), and less than 2.2 µs for IPP(max) is important.
The second detail is the amplitude of ringing on the VAUX waveform following tLK_RESET. The peak-to-peak voltage
variation at the VS pin must be less than 100 mVp-p for at least 200 ns before the end of the demagnetization
time (tDM). A concern with excessive ringing usually occurs during light or no-load conditions, when tDM is at the
minimum. The tolerable ripple on VS is scaled up to the auxiliary-winding voltage by RS1 and RS2, and is equal to
100 mV × (RS1 + RS2) / RS2 .
Figure 14. Auxiliary-Winding Waveform Details
14
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During voltage regulation, the controller operates in frequency-modulation mode and amplitude-modulation
mode, as shown in Figure 15. The internal operating-frequency limits of the device are 100 kHz and fSW(min). The
maximum operating frequency of the converter at full-load is generally chosen to be slightly lower than 100 kHz
to allow for tolerances, or significantly lower due to switching-loss considerations. The maximum operating
frequency and primary peak current chosen determine the transformer primary inductance of the converter. The
shunt-regulator bias power, output preload resistor (if any), and low-power conversion efficiency determine the
minimum-operating frequency of the converter. Voltage-loop stability compensation is applied at the shuntregulator which drives the opto-coupled feedback signal. The tolerances chosen for the shunt-regulator reference
and the sense resistors determines the regulation accuracy.
Figure 15. Frequency And Amplitude Modulation Modes
(During CV Regulation)
The level of feedback current (IFB) into the FB pin determines the internal VCL which determines the operating
point of the controller while in CV mode. When IFB rises above 22 µA, no further decrease in fSW occurs. When
the output-load current increases to the point where maximum fSW is reached, control transfers to CC mode. All
current, voltage, frequency, breakpoints, and curve-segment linearity depicted in Figure 15 are nominal.
Figure 15 indicates the general operation of the controller while in CV mode, although minor variations may occur
from part to part. An internal frequency-dithering mechanism is enabled when IFB is less than 14.6 µA to help
reduce conducted EMI (including during CC-mode operation), and is disabled otherwise.
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Primary-Side Constant-Current (CC) Regulation
When the load current of the converter increases to the predetermined constant-current limit, operation enters
CC mode. In CC mode, output voltage regulation is lost and the shunt-regulator drives the current and voltage at
FB to minimum. During CC mode, timing information at the VS pin and current information at the CS pin allow
accurate regulation of the average current of the secondary winding. The CV-regulation control law dictates that
as load increases approaches CC regulation the primary peak current will be at IPP(max). The primary peak
current, turns-ratio, demagnetization time tDM, and switching period tSW determine the secondary average output
current (see Figure 16). Ignoring leakage-inductance effects, the average output current is given by Equation 5.
When the demagnetization duty-cycle reaches the CC-regulation reference, DMAGCC, in the current-control block,
the controller operates in frequency modulation (FM) mode to control the output current for any output voltage at
or below the voltage-regulation target as long as the auxiliary winding keeps VVDD above the UVLO turnoff
threshold. As the output voltage falls, tDM increases. The controller acts to increase tSW to maintain the ratio of
tDM to switching period (tDM / tSW) at a maximum of 0.425 (DMAGCC), thereby maintaining a constant average
output current.
IPP
IS × NS/NP
tON
tDM
tSW
UDG-12203
Figure 16. Transformer-Current Relationship
I
N
t
IOUT = PP ´ P ´ DM
2 NS tSW
(5)
Fast, accurate, opto-coupled CV control combined with line-compensated PSR CC control results in highperformance voltage and current regulation which minimizes voltage deviations due to heavy load and unload
steps, as illustrated by the V-I curve in Figure 17.
Figure 17. Typical Target Output V-I Characteristic
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Valley-Switching and Valley-Skipping
The UCC28740 uses valley-switching to reduce switching losses in the MOSFET, to reduce induced-EMI, and to
minimize the turnon current spike at the current-sense resistor. The controller operates in valley-switching in all
load conditions unless the VDS ringing diminishes to the point where valleys are no longer detectable.
As shown in Figure 18, the UCC28740 operates in a valley-skipping mode (also known as valley-hopping) in
most load conditions to maintain an accurate voltage or current regulation point and still switch on the lowest
available VDS voltage.
Figure 18. Valley-Skipping Mode
Valley-skipping modulates each switching cycle into discrete period durations. During FM operation, the
switching cycles are periods when energy is delivered to the output in fixed packets, where the power-per-cycle
varies discretely with the switching period. During operating conditions when the switching period is relatively
short, such as at high-load and low-line, the average power delivered per cycle varies significantly based on the
number of valleys skipped between cycles. As a consequence, valley-skipping adds additional ripple voltage to
the output with a frequency and amplitude dependent upon the loop-response of the shunt-regulator. For a load
with an average power level between that of cycles with fewer valleys skipped and cycles with more valleys
skipped, the voltage-control loop modulates the FB current according to the loop-bandwidth and toggles between
longer and shorter switching periods to match the required average output power.
Startup Operation
An internal high-voltage startup switch, connected to the bulk-capacitor voltage (VBULK) through the HV pin,
charges the VDD capacitor. This startup switch functions similarly to a current source providing typically 250 µA
to charge the VDD capacitor. When VVDD reaches the 21-V UVLO turnon threshold the controller is enabled, the
converter starts switching, and the startup switch turns off.
Often at initial turnon, the output capacitor is in a fully-discharged state. The first three switching-cycle current
peaks are limited to IPP(min) to monitor for any initial input or output faults with limited power delivery. After these
three cycles, if the sampled voltage at VS is less than 1.33 V, the controller operates in a special startup mode.
In this mode, the primary current peak amplitude of each switching cycle is limited to approximately 0.63 ×
IPP(max) and DMAGCC increases from 0.425 to 0.735. These modifications to IPP(max) and DMAGCC during startup
allows high-frequency charge-up of the output capacitor to avoid audible noise while the demagnetization voltage
is low. Once the sampled VS voltage exceeds 1.38 V, DMAGCC is restored to 0.425 and the primary current peak
resumes as IPP(max). While the output capacitor charges, the converter operates in CC mode to maintain a
constant output current until the output voltage enters regulation. Thereafter, the controller responds to the
condition dictated by the control law. The time to reach output regulation consists of the time the VDD capacitor
charges to 21 V plus the time the output capacitor charges.
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Fault Protection
The UCC28740 provides extensive fault protection. The protection functions include:
• Output overvoltage
• Input undervoltage
• Internal overtemperature
• Primary overcurrent fault
• CS-pin fault
• VS-pin fault
A UVLO reset and restart sequence applies to all fault-protection events.
The output-overvoltage function is determined by the voltage feedback on the VS pin. If the voltage sample of VS
exceeds 4.6 V, the device stops switching and the internal current consumption becomes IFAULT which
discharges the VDD capacitor to the UVLO-turnoff threshold. After that, the device returns to the start state and a
startup sequence ensues.
The UCC28740 always operates with cycle-by-cycle primary peak current control. The normal operating voltage
range of the CS pin is 0.773 V to 0.194 V. An additional protection, not filtered by leading-edge blanking, occurs
if the CS pin voltage reaches 1.5 V, which results in a UVLO reset and restart sequence.
Current into the VS pin during the MOSFET on-time determines the line-input run and stop thresholds. While the
VS pin clamps close to GND during the MOSFET on-time, the current through RS1 is monitored to determine a
sample of VBULK. A wide separation of the run and stop thresholds allows for clean startup and shutdown of the
power supply with the line voltage. The run-current threshold is 225 µA and the stop-current threshold is 80 µA.
The internal overtemperature-protection threshold is 165°C. If the junction temperature reaches this threshold the
device initiates a UVLO-reset cycle. If the temperature is still high at the end of the UVLO cycle, the protection
cycle repeats.
Protection is included in the event of component failures on the VS pin. If complete loss of feedback information
on the VS pin occurs, the controller stops switching and restarts.
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DESIGN PROCEDURE
This procedure outlines the steps to design a constant-voltage, constant-current flyback converter using the
UCC28740 controller. See Figure 19 for component names and network locations. The design procedure
equations use terms that are defined below.
Figure 19. Design Procedure Application Example
Definition of Terms
Capacitance Terms in Farads
CBULK The total input capacitance of CB1 and CB2.
CVDD The minimum required capacitance on the VDD pin.
COUT The minimum output capacitance required.
Duty Cycle Terms
DMAGCC The secondary diode conduction duty-cycle limit in CC mode, 0.425.
DMAX MOSFET on-time duty-cycle.
Frequency Terms in Hertz
fLINE
The minimum input-line frequency.
fMAX
The target full-load maximum switching frequency of the converter.
fMIN
The steady-state minimum switching frequency of the converter.
fSW(min) The minimum possible switching frequency (see ELECTRICAL CHARACTERISTICS).
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Current Terms in Amperes
IOCC
The converter output constant-current target.
IPP(max) The maximum transformer primary peak current.
ISTART The startup bias-supply current (see ELECTRICAL CHARACTERISTICS).
ITRAN The required positive load-step current.
IVSL(run) The VS-pin run current (see ELECTRICAL CHARACTERISTICS).
Current and Voltage Scaling Terms
KAM
The maximum-to-minimum peak primary current ratio (see ELECTRICAL CHARACTERISTICS).
KLC
The current-scaling constant for line compensation(see ELECTRICAL CHARACTERISTICS).
Transformer Terms
LP
The transformer primary inductance.
NAS
The transformer auxiliary-to-secondary turns-ratio.
NPA
The transformer primary-to-auxiliary turns-ratio.
NPS
The transformer primary-to-secondary turns-ratio.
Power Terms in Watts
PIN
The converter maximum input power.
POUT The full-load output power of the converter.
PSB
The total standby power.
Resistance Terms in Ohms
RCS
The primary peak-current programming resistance.
RESR The total ESR of the output capacitor(s).
RPL
The preload resistance on the output of the converter.
RS1
The high-side VS-pin sense resistance.
RS2
The low-side VS-pin sense resistance.
Timing Terms in Seconds
tD
The total current-sense delay including MOSFET-turnoff delay; add 50 ns to MOSFET delay.
tDM(min) The minimum secondary rectifier conduction time.
tON(min) The minimum MOSFET on time.
tR
The resonant frequency during the DCM dead time.
tRESP The maximum response time of the voltage-regulation control-loop to the maximum required load-step.
Voltage Terms in Volts
VBLK The highest bulk-capacitor voltage for standby power measurement.
VBULK(min) The minimum valley voltage on CB1 and CB2 at full power.
VCCR The constant-current regulation factor (see ELECTRICAL CHARACTERISTICS).
VCST(max) The CS-pin maximum current-sense threshold (see ELECTRICAL CHARACTERISTICS).
VCST(min) The CS-pin minimum current-sense threshold (see ELECTRICAL CHARACTERISTICS).
VVDD(off) The UVLO turnoff voltage (see ELECTRICAL CHARACTERISTICS).
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VVDD(on) The UVLO turnon voltage (see ELECTRICAL CHARACTERISTICS).
VDSPK The MOSFET drain-to-source peak voltage at high line.
VF
The secondary-rectifier forward-voltage drop at near-zero current.
VFA
The auxiliary-rectifier forward-voltage drop.
VLK
The estimated leakage-inductance energy reset voltage.
VOΔ
The output voltage drop allowed during the load-step transient in CV mode.
VOCBC The target cable-compensation voltage added to VOCV (provided by an external adjustment circuit applied
to the shunt-regulator). Set equal to 0 V if not used.
VOCC The converter lowest output voltage target while in constant-current regulation.
VOCV The regulated output voltage of the converter.
VOV
The maximum allowable peak output voltage.
VOVP The overvoltage-detection level at the VS input (see ELECTRICAL CHARACTERISTICS).
VREVA The peak reverse voltage on the auxiliary rectifier.
VREVS The peak reverse voltage on the secondary rectifier.
VRIPPLE The output peak-to-peak ripple voltage at full-load.
AC Voltage Terms in VRMS
VIN(max) The maximum input voltage to the converter.
VIN(min) The minimum input voltage to the converter.
VIN(run) The converter startup (run) input voltage.
Efficiency Terms
η
The converter overall efficiency at full-power output.
ηSB
The estimated efficiency of the converter at no-load condition, excluding startup resistance or bias losses.
For a 5-V USB-charger application, 60% to 65% is a good initial estimate.
ηXFMR The transformer primary-to-secondary power-transfer efficiency.
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Standby Power Estimate and No-Load Switching Frequency
Assuming minimal no-load standby power is a critical design requirement, determine the estimated no-load
power loss based on an accounting of all no-load operating and leakage currents at their respective voltages.
Close attention to detail is necessary to account for all of the sources of leakage, however, in many cases,
prototype measurement is the only means to obtain a realistic estimation of total primary and secondary leakage
currents. At present, converter standby power is certified by compliance-agency authorities based on steadystate room-temperature operation at the highest nominal input voltage rating (typically 230 Vrms).
Equation 6 estimates the standby power loss from the sum of all leakage currents of the primary-side
components of the converter. These leakage currents are measured in aggregate by disconnecting the HV input
of the controller from the bulk-voltage rail to prevent operating currents from interfering with the leakage
measurement.
(6)
Equation 7 estimates the standby power loss from the sum of all leakage and operating currents of the
secondary-side components on the output of the converter. Leakage currents result from reverse voltage applied
across the output rectifier and capacitors, while the operating current includes currents required by the shuntregulator, optocoupler, and associated components.
(7)
Equation 8 estimates the standby power loss from the sum of all leakage and operating currents of the auxiliaryside components on the controller of the converter. Leakage currents of the auxiliary diode and capacitor are
usually negligible. The operating current includes the wait-state current, IWAIT, of the UCC28740 controller, plus
the optocoupler-output current for the FB network in the steady-state no-load condition. The VDD voltage in the
no-load condition VVDDNL are the lowest practicable value to minimize loss.
(8)
Note that PPRI_SB is the only loss that is not dependent on transformer conversion efficiency. PSEC_SB and PAUX_SB
are processed through the transformer and incur additional losses as a consequence. Typically, the transformer
no-load conversion efficiency ηSWNL lies in the range of 0.50 to 0.70. Total standby input power (no-load
condition) is estimated by Equation 9.
(9)
Although the UCC28740 is capable of operating at the minimum switching frequency of 170 Hz, a typical
converter is likely to require a higher frequency to sustain operation at no-load. An accurate estimate of the noload switching frequency fSWNL entails a thorough accounting of all switching-related energy losses within the
converter including parasitic elements of the power-train components. In general, fSWNL is likely to lie within the
range of 400 Hz to 800 Hz. A more detailed treatment of standby power and no-load frequency is beyond the
scope of this data sheet.
Input Bulk Capacitance and Minimum Bulk Voltage
Determine the minimum voltage on the input bulk capacitance, CB1 and CB2 total, in order to determine the
maximum Np-to-Ns turns-ratio of the transformer. The input power of the converter based on target full-load
efficiency, the minimum input RMS voltage, and the minimum AC input frequency determine the input
capacitance requirement.
Maximum input power is determined based on IOCC, VOCV, VCBC (if used), and the full-load conversion-efficiency
target.
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(10)
Equation 11 provides an accurate solution for the total input capacitance based on a target minimum bulkcapacitor voltage. Alternatively, to target a given input capacitance value, iterate the minimum capacitor voltage
to achieve the target capacitance value.
(11)
Transformer Turns-Ratio, Inductance, Primary Peak Current
The target maximum switching frequency at full-load, the minimum input-capacitor bulk voltage, and the
estimated DCM quasi-resonant time determine the maximum primary-to-secondary turns-ratio of the transformer.
Initially determine the maximum-available total duty-cycle of the on-time and secondary conduction time based
on the target switching frequency, fMAX, and DCM resonant time. For DCM resonant frequency, assume 500 kHz
if an estimate from previous designs is not available. At the transition-mode operation limit of DCM, the interval
required from the end of secondary current conduction to the first valley of the VDS voltage is ½ of the DCM
resonant period (tR), or 1 µs assuming 500 kHz resonant frequency. The maximum allowable MOSFET on-time
DMAX is determined using Equation 12.
(12)
When DMAX is known, the maximum primary-to-secondary turns-ratio is determined with Equation 13. DMAGCC is
defined as the secondary-diode conduction duty-cycle during CC operation and is fixed internally by the
UCC28740 at 0.425. The total voltage on the secondary winding must be determined, which is the sum of VOCV,
VF, and VOCBC. For the 5-V USB-charger applications, a turns ratio range of 13 to 15 is typically used.
(13)
A higher turns-ratio generally improves efficiency, but may limit operation at low input voltage. Transformer
design iterations are generally necessary to evaluate system-level performance trade-offs. When the optimum
turns-ratio NPS is determined from a detailed transformer design, use this ratio for the following parameters.
The UCC28740 constant-current regulation is achieved by maintaining DMAGCC at the maximum primary peak
current setting. The product of DMAGCC and VCST(max) defines a CC-regulating voltage factor VCCR which is used
with NPS to determine the current-sense resistor value necessary to achieve the regulated CC target, IOCC (see
Equation 14).
Because a small portion of the energy stored in the transformer does not transfer to the output, a transformerefficiency term is included in the RCS equation. This efficiency number includes the core and winding losses, the
leakage-inductance ratio, and a bias-power to maximum-output-power ratio. An overall-transformer efficiency of
0.91 is a good estimate based on 3.5% leakage inductance, 5% core & winding loss, and 0.5% bias power, for
example. Adjust these estimates as appropriate based on each specific application.
V
´ NPS
RCS = CCR
´ hXFMR
2IOCC
(14)
The primary transformer inductance is calculated using the standard energy storage equation for flyback
transformers. Primary current, maximum switching frequency, output voltage and current targets, and transformer
power losses are included in Equation 16.
First, determine the transformer primary peak current using Equation 15. Peak primary current is the maximum
current-sense threshold divided by the current-sense resistance.
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(15)
(16)
NAS is determined by the lowest target operating output voltage while in constant-current regulation and by the
VDD UVLO turnoff threshold of the UCC28740. Additional energy is supplied to VDD from the transformer
leakage-inductance which allows a lower turns ratio to be used in many designs.
(17)
Transformer Parameter Verification
Because the selected transformer turns-ratio affects the MOSFET VDS and the secondary and auxiliary rectifier
reverse voltages, a review of these voltages is important. In addition, internal timing constraints of the UCC28740
require a minimum on time of the MOSFET (tON) and a minimum demagnetization time (tDM) of the transformer in
the high-line minimum-load condition. The selection of fMAX, LP, and RCS affects the minimum tON and tDM.
Equation 18 and Equation 19 determine the reverse voltage stresses on the secondary and auxiliary rectifiers.
Stray inductance can impress additional voltage spikes upon these stresses and snubbers may be necessary.
(18)
(19)
For the MOSFET VDS peak voltage stress, an estimated leakage inductance voltage spike (VLK) is included.
(20)
Equation 21 determines if tON(min) exceeds the minimum tON target of 280 ns (maximum tCSLEB). Equation 22
verifies that tDM(min) exceeds the minimum tDM target of 1.2 µs.
(21)
(22)
VS Resistor Divider, Line Compensation
The VS divider resistors determine the output overvoltage detection point of the flyback converter. The high-side
divider resistor (RS1) determines the input-line voltage at which the controller enables continuous DRV operation.
RS1 is determined based on transformer primary-to-auxiliary turns-ratio and desired input voltage operating
threshold.
(23)
The low-side VS pin resistor is then selected based on the desired overvoltage limit, VOV.
(24)
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The UCC28740 maintains tight constant-current regulation over varying input line by using the line-compensation
feature. The line-compensation resistor (RLC) value is determined by current flowing in RS1 and the total internal
gate-drive and external MOSFET turnoff delay. Assume an internal delay of 50 ns in the UCC28740.
K ´ RS1 ´ RCS ´ tD ´ NPA
RLC = LC
LP
(25)
Output Capacitance
The output capacitance value is often determined by the transient-response requirement from the no-load
condition. For example, in typical low-power USB-charger applications, there is a requirement to maintain a
minimum transient VO of 4.1 V with a load-step ITRAN from 0 mA to 500 mA. Yet new higher-performance
applications require smaller transient voltage droop VOΔ with ITRAN of much greater amplitude (such as from noload to full-load), which drives the need for high-speed opto-coupled voltage feedback.
where
•
tRESP is the time delay from the moment ITRAN is applied to the moment when IFB falls below 1 µA
(26)
Additional considerations for the selection of appropriate output capacitors include ripple-current, ESR, and ESL
ratings necessary to meet reliability and ripple-voltage requirements. Detailed design criteria for these
considerations are beyond the scope of this datasheet.
VDD Capacitance, CVDD
The capacitance on VDD must supply the primary-side operating current used during startup and between lowfrequency switching pulses. The largest result of three independent calculations denoted in Equation 27,
Equation 28, and Equation 29 determines the value of CVDD.
At startup, when VVDD(on) is reached, CVDD alone supplies the device operating current and MOSFET gate current
until the output of the converter reaches the target minimum-operating voltage in CC regulation, VOCC. Now the
auxiliary winding sustains VDD for the UCC28740 above UVLO. The total output current available to the load and
to charge the output capacitors is the CC-regulation target, IOCC. Equation 27 assumes that all of the output
current of the converter is available to charge the output capacitance until VOCC is achieved. For typical
applications, Equation 27 includes an estimated qGfSW(max) of average gate-drive current and a 1-V margin added
to VVDD.
(27)
During a worst-case un-load transient event from full-load to no-load, COUT overcharges above the normal
regulation level for a duration of tOV, until the output shunt-regulator loading is able to drain VOUT back to
regulation. During tOV, the voltage feedback loop and optocoupler are saturated, driving maximum IFB and
temporarily switching at fSW(min). The auxiliary bias current expended during this situation exceeds that normally
required during the steady-state no-load condition. Equation 28 calculates the value of CVDD (with a safety factor
of 2) required to ride through the tOV duration until steady-state no-load operation is achieved.
(28)
Finally, in the steady-state no-load operating condition, total no-load auxiliary-bias current, IAUXNL is provided by
the converter switching at a no-load frequency, fSWNL, which is generally higher than fSW(min). CVDD is calculated to
maintain a target VDD ripple voltage lower than ΔVVDD, using Equation 29.
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(29)
Feedback Network Biasing
Achieving very low standby power while maintaining high-performance load-step transient response requires
careful design of the feedback network. Optically-coupled secondary-side regulation is used to provide the rapid
response needed when a heavy load step occurs during the no-load condition. One of the most commonly used
devices to drive the optocoupler is the TL431 shunt-regulator, due to its simplicity, regulation performance, and
low cost. This device requires a minimum bias current of 1 mA to maintain regulation accuracy. Together with the
UCC28740 primary-side controller, careful biasing will ensure less than 30 mW of standby power loss at room
temperature. Where a more stringent standby loss limit of less than 10 mW is required, the TLV431 device is
recommended due to its minimum 80-µA bias capability.
Facilitating these low standby-power targets is the approximate 23-µA range of the FB input for full to no-load
voltage regulation. The control-law profile graph (see Figure 15) shows that for FB-input current greater than 22
µA, no further reduction in switching frequency is possible. Therefore, minimum power is converted at fSW(min).
However, the typical minimum steady-state operating frequency tends to be in the range of several-hundred
Hertz, and consequently the maximum steady-state FB current at no-load will be less than IFBMAX. Even so,
prudent design practice dictates that IFBMAX should be used for conservative steady-state biasing calculations. At
this current level, VFBMAX can be expected at the FB input.
Referring to the Design Procedure Application Example in Figure 19, the main purpose of RFB4 is to speed up the
turnoff time of the optocoupler in the case of a heavy load-step transient condition. The value of RFB4 is
determined empirically due to the variable nature of the specific optocoupler chosen for the design, but tends to
fall within the range of 10 kΩ to 100 kΩ. A tradeoff must be made between a lower value for faster transient
response and a higher value for lower standby power. RFB4 also serves to set a minimum bias current for the
optocoupler and to drain dark current.
It is important to understand the distinction between steady-state no-load bias currents and voltages which affect
standby power, and the varying extremes of these same currents and voltages which affect regulation during
transient conditions. Design targets for minimum standby loss and maximum transient response often result in
conflicting requirements for component values. Trade-offs, such as for RFB4 as discussed previously, must be
made.
During standby operation, the total auxiliary current (used in Equation 8) is the sum of IWAIT into the IC and the
no-load optocoupler-output current ICENL. This optocoupler current is given by Equation 30.
(30)
For fast response, the optocoupler-output transistor is biased to minimize the variation of VCE between full-load
and no-load operation. Connecting the emitter directly to the FB input of the UCC28740 is possible, however, an
unload-step response may unavoidably drive the optocoupler into saturation which will overload the FB input with
full VDD applied. A series-resistor RFB3 is necessary to limit the current into FB and to avoid excess draining of
CVDD during this type of transient situation. The value of RFB3 is chosen to limit the excess IFB and RFB4 current to
an acceptable level when the optocoupler is saturated. Like RFB4, the RFB3 value is also chosen empirically
during prototype evaluation to optimize performance based on the conditions present during that situation. A
starting value may be estimated using Equation 31.
(31)
Note that RFB3 is estimated based on the expected no-load VDD voltage, but full-load VDD voltage will be higher
resulting in initially higher ICE current during the unload-step transient condition. Because RFB3 is interposed
between VE and the FB input, the optocoupler transistor VCE varies considerably more as ICE varies and transient
response time is reduced. Capacitor CFB3 across RFB3 helps to improve the transient response again. The value
of CFB3 is estimated initially by equating the RFB3CFB3 time constant to 1 ms, and later is adjusted higher or lower
for optimal performance during prototype evaluation.
26
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UCC28740
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SLUSBF3A – JULY 2013 – REVISED JULY 2013
The optocoupler transistor-output current ICE is proportional to the optocoupler diode input current by its current
transfer ratio, CTR. Although many optocouplers are rated with nominal CTR between 50% and 600%, or are
ranked into narrower ranges, the actual CTR obtained at the low currents used with the UCC28740 falls around
5% to 15%. At full-load regulation, when IFB is near zero, VFB is still approximately 0.4 V and this sets a minimum
steady-state current for ICE through RFB4. After choosing an optocoupler, the designer must characterize its CTR
over the range of low output currents expected in this application, because optocoupler data sheets rarely
include such information. The actual CTR obtained is required to determine the diode input current range at the
secondary-side shunt-regulator.
Referring again to Figure 19, the shunt-regulator (typically a TL431) current must be at least 1 mA even when
almost no optocoupler diode current flows. Since even a near-zero diode current establishes a forward voltage,
ROPT is selected to provide the minimum 1-mA regulator bias current. The optocoupler input diode must be
characterized by the designer to obtain the actual forward voltage versus forward current at the low currents
expected. At the full-load condition of the converter, IFB is around 0.5 µA, ICE may be around (0.4 V / RFB4), and
CTR at this level is about 10%, so the diode current typically falls in the range of 25 µA to 100 µA. Typical optodiode forward voltage at this level is about 0.97 V which is applied across ROPT. If ROPT is set equal to 1 kΩ, this
provides 970 µA plus the diode current for IOPT.
As output load decreases, the voltage across the shunt-regulator also decreases to increase the current through
the optocoupler diode. This increases the diode forward voltage across ROPT. CTR at no-load (when ICE is
higher) is generally a few percent higher than CTR at full-load (when ICE is lower). At steady-state no-load
condition, the shunt-regulator current is maximized and can be estimated by Equation 30 and Equation 32.
IOPTNL, plus the sum of the leakage currents of all the components on the output of the converter, constitute the
total current required for use in Equation 7 to estimate secondary-side standby loss.
(32)
The shunt-regulator voltage can decrease to a minimum, saturated level of about 2 V. To prevent excessive
diode current, a series resistor, RTL, is added to limit IOPT to the maximum value necessary for regulation.
Equation 33 provides an estimated initial value for RTL, which may be adjusted for optimal limiting later during the
prototype evaluation process.
(33)
The output-voltage sense-network resistors RFB1 and RFB2 are calculated in the usual manner based on the
shunt-regulator reference voltage and input bias current. Having characterized the optocoupler at low currents
and determined the initial values of RFB1, RFB2, RFB3, RFB4, CFB3, ROPT and RTL using the above procedure, the
DC-bias states of the feedback network can be established for steady-state full-load and no-load conditions.
Adjustments of these initial values may be necessary to accommodate variations of the UCC28740, optocoupler,
and shunt-regulator parameters for optimal overall performance.
The shunt-regulator compensation network, ZFB, is determined using well-established design techniques for
control-loop stability. Typically, a type-II compensation network is used. The compensation design procedure is
beyond the scope of this datasheet.
REVISION HISTORY
Changes from Original (July, 2013) to Revision A
•
Page
Changed marketing status from Product Preview to Production Data. ................................................................................ 1
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27
PACKAGE OPTION ADDENDUM
www.ti.com
27-Jul-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
UCC28740D
ACTIVE
SOIC
D
7
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
U28740
UCC28740DR
ACTIVE
SOIC
D
7
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
U28740
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Jul-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
UCC28740DR
Package Package Pins
Type Drawing
SOIC
D
7
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.4
B0
(mm)
K0
(mm)
P1
(mm)
5.2
2.1
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Jul-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
UCC28740DR
SOIC
D
7
2500
367.0
367.0
35.0
Pack Materials-Page 2
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