TO -2 20A B PSMN3R9-60PS N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 1 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • • • High efficiency due to low switching & conduction losses Robust construction for demanding applications Standard level gate 3. Applications • • • • Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 60 V ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 - - 130 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 263 W VGS = 10 V; ID = 25 A; Tj = 25 °C; - 2.94 3.9 mΩ [1] Static characteristics RDSon drain-source on-state resistance Fig. 11 Dynamic characteristics QG(tot) QGD total gate charge ID = 25 A; VDS = 48 V; VGS = 10 V; - 103 - nC gate-drain charge Fig. 13; Fig. 14 - 33 - nC ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω; - - 283 mJ Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy [1] VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 Continuous current is limited by package. Scan or click this QR code to view the latest information for this product PSMN3R9-60PS NXP Semiconductors N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G S mbb076 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package PSMN3R9-60PS Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 7. Marking Table 4. Marking codes Type number Marking code PSMN3R9-60PS PSMN3R9-60PS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 60 V VDGR drain-gate voltage RGS = 20 kΩ - 60 V VGS gate-source voltage -20 20 V ID drain current - 130 A Tmb = 100 °C; VGS = 10 V; Fig. 1 - 127 A Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 - 705 A IDM peak drain current PSMN3R9-60PS Product data sheet Tmb = 25 °C; VGS = 10 V; Fig. 1 All information provided in this document is subject to legal disclaimers. 1 February 2013 [1] © NXP B.V. 2013. All rights reserved 2 / 13 PSMN3R9-60PS NXP Semiconductors N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 Symbol Parameter Conditions Min Max Unit Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 263 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C - 130 A Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 705 A ID = 130 A; Vsup ≤ 60 V; RGS = 50 Ω; - 283 mJ [1] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 [1] Continuous current is limited by package. 003aak454 200 ID (A) 03aa16 120 Pder (%) 160 (1) 80 120 80 40 40 0 Fig. 1. 0 30 60 90 120 150 Tj (°C) Continuous drain current as a function of mounting base temperature PSMN3R9-60PS Product data sheet 0 180 Fig. 2. 0 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 1 February 2013 50 © NXP B.V. 2013. All rights reserved 3 / 13 PSMN3R9-60PS NXP Semiconductors N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 IAL (A) 003aak455 103 102 (1) (2) 10 1 10-3 Fig. 3. 10-2 10-1 1 tAL (ms) 10 Single pulse avalanche rating; avalanche current as a function of avalanche time 003aak456 103 ID (A) tp =10 µ s Limit RDSon = VDS / ID 102 100 µ s 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 Fig. 4. 1 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 0.49 0.57 K/W Rth(j-a) thermal resistance from junction to ambient - 60 - K/W PSMN3R9-60PS Product data sheet vertical in still air All information provided in this document is subject to legal disclaimers. 1 February 2013 © NXP B.V. 2013. All rights reserved 4 / 13 PSMN3R9-60PS NXP Semiconductors N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 003aah108 1 Zth(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 0.02 10 -2 10 -3 P single shot tp 10-6 Fig. 5. 10-5 10-4 10-3 10-2 tp T δ= t T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; 2.4 3 4 V 1 - - V - - 4.5 V VDS = 60 V; VGS = 0 V; Tj = 175 °C - - 500 µA VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.07 1 µA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 25 °C; - 2.94 3.9 mΩ - - 8.5 mΩ f = 1 MHz 0.35 0.7 1.4 Ω total gate charge ID = 25 A; VDS = 48 V; VGS = 10 V; - 103 - nC gate-source charge Fig. 13; Fig. 14 - 25.1 - nC Static characteristics V(BR)DSS VGS(th) Fig. 9; Fig. 10 ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 9 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 9 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 11 VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 11; Fig. 12 RG gate resistance Dynamic characteristics QG(tot) QGS PSMN3R9-60PS Product data sheet All information provided in this document is subject to legal disclaimers. 1 February 2013 © NXP B.V. 2013. All rights reserved 5 / 13 PSMN3R9-60PS NXP Semiconductors N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 Symbol Parameter Conditions Min Typ Max Unit QGD gate-drain charge - 33 - nC Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; - 5600 - pF Tj = 25 °C; Fig. 15 Coss output capacitance - 740 - pF Crss reverse transfer capacitance - 460 - pF td(on) turn-on delay time VDS = 45 V; RL = 1.8 Ω; VGS = 10 V; - 25.3 - ns tr rise time RG(ext) = 5 Ω - 41.4 - ns td(off) turn-off delay time - 62.7 - ns tf fall time - 45 - ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.8 1.2 V trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; - 39 - ns Qr recovered charge VDS = 25 V - 51 - nC 360 10 ID (A) 8 003aah394 15 6 RDSon (mΩ ) 240 003aah395 10 5.5 120 5 5 VGS (V) = 4.5 0 0 1 2 3 0 V DS(V) 4 Tj = 25 °C; tp = 300 μs Fig. 6. Fig. 7. Output characteristics; drain current as a function of drain-source voltage; typical values PSMN3R9-60PS Product data sheet 0 10 15 V (V) 20 GS Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 1 February 2013 5 © NXP B.V. 2013. All rights reserved 6 / 13 PSMN3R9-60PS NXP Semiconductors N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 003aah397 400 003aah027 5 VGS(th) (V) ID (A) max 4 300 3 typ 2 min 200 Tj = 175 °C 100 1 Tj = 25 ° C 0 Fig. 8. 0 2 4 0 -60 6 V (V) 8 GS Transfer characteristics; drain current as a function of gate-source voltage; typical values Fig. 9. 003aah028 10-1 0 60 120 180 Gate-source threshold voltage as a function of junction temperature 003aah400 15 ID (A) T j (°C) RDSon (mΩ ) 10-2 min 10-3 typ 5 10 max 5.5 6 10-4 5 8 10-5 10-6 VGS (V) = 10 0 2 4 VGS (V) 0 6 Fig. 10. Sub-threshold drain current as a function of gate-source voltage PSMN3R9-60PS Product data sheet 0 120 240 ID (A) 360 Tj = 25 °C; tp = 300 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 1 February 2013 © NXP B.V. 2013. All rights reserved 7 / 13 PSMN3R9-60PS NXP Semiconductors N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 003aag814 2.4 VDS a ID 1.8 VGS(pl) VGS(th) 1.2 VGS QGS1 0.6 QGS2 QGS QGD QG(tot) 003aaa508 0 -60 0 60 120 Tj (°C) Fig. 13. Gate charge waveform definitions 180 Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aah402 10 VGS (V) 003aah403 104 C (pF) 8 C iss 14 V 6 VDS = 48V 103 C oss 4 Crss 2 0 0 40 80 QG (nC) 120 Fig. 14. Gate-source voltage as a function of gate charge; typical values PSMN3R9-60PS Product data sheet 102 10-1 1 10 VDS (V) 102 Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 1 February 2013 © NXP B.V. 2013. All rights reserved 8 / 13 PSMN3R9-60PS NXP Semiconductors N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 003aah404 360 IS (A) 240 Tj = 175° C 120 Tj = 25 °C 0 0 0.5 1 VSD (V) 1.5 Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN3R9-60PS Product data sheet All information provided in this document is subject to legal disclaimers. 1 February 2013 © NXP B.V. 2013. All rights reserved 9 / 13 PSMN3R9-60PS NXP Semiconductors N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78 11. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 17. Package outline TO-220AB (SOT78) PSMN3R9-60PS Product data sheet All information provided in this document is subject to legal disclaimers. 1 February 2013 © NXP B.V. 2013. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP B.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 1 February 2013 PSMN3R9-60PS Product data sheet All information provided in this document is subject to legal disclaimers. 1 February 2013 © NXP B.V. 2013. All rights reserved 13 / 13