DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV73 Dual high-speed switching diode in common cathode configuration Preliminary specification 1997 May 06 Philips Semiconductors Preliminary specification Dual high-speed switching diode in common cathode configuration FEATURES BAV73 PINNING SOT23 • Plastic SMD package PIN • High switching speed 1 anode 1 • Common cathode configuration. 2 anode 2 3 common cathode DESCRIPTION APPLICATIONS • General. 2 handbook, 4 columns 1 DESCRIPTION Dual diode in a common cathode configuration in a small rectangular SMD SOT23 package. 2 1 3 3 MAM108 Top view Marking code: JBp. Fig.1 Simplified outline and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage VR continuous reverse voltage IF(AV) average forward current IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current average over any 20 ms period; tp ≤ 0.5 ms − 250 V − 200 V − 200 mA − 200 mA − 625 mA t = 1 µs − 9 A t = 100 µs − 3 A t = 10 ms − 1.7 A Tamb = 25 °C; note 1 − 250 mW storage temperature −65 +150 °C junction temperature − 150 °C Ptot total power dissipation Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. 1997 May 06 2 Philips Semiconductors Preliminary specification Dual high-speed switching diode in common cathode configuration BAV73 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VF forward voltage V(BR)R reverse breakdown voltage IR reverse current IF = 100 mA − 1 V IF = 200 mA − 1.25 V IR = 100 µA 250 − V VR = 250 V − 100 nA VR = 250 V; Tj = 150 °C − 100 µA − 5 pF 50 ns Cd diode capacitance VR = 0; f = 1 MHz trr reverse recovery time switching from IF = 30 mA to IR = 30 mA; − RL = 100 Ω; measured at IR = 3 mA THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point 1997 May 06 3 VALUE UNIT 360 K/W Philips Semiconductors Preliminary specification Dual high-speed switching diode in common cathode configuration BAV73 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1997 May 06 EUROPEAN PROJECTION 4 Philips Semiconductors Preliminary specification Dual high-speed switching diode in common cathode configuration BAV73 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 May 06 5 Philips Semiconductors Preliminary specification Dual high-speed switching diode in common cathode configuration BAV73 NOTES 1997 May 06 6 Philips Semiconductors Preliminary specification Dual high-speed switching diode in common cathode configuration BAV73 NOTES 1997 May 06 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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