Features • • • • • • • • Debounce Time: 0.3 ms to 6 s RC Oscillator Determines Switching Characteristics Relay Driver with Z-diode Debounced Input for Toggle Switch Three Debounced Inputs: ON, OFF and TOGGLE Load-dump Protection RF Interference Protection Protection According to ISO/TR7637-1 (VDE 0839) Description Automotive Toggle Switch IC The bipolar integrated circuit U6032B is designed as a toggle switch. The device, which has a defined power-on status, can be used to control electrical loads, for example, fog lamps, high/low beam or heated windows for automotive applications. U6032B Figure 1. Block Diagram with External Circuit C2 OSC 47 µF R2 6 Oscillator Vstab 7 C1 VS 8 Stabilization Power-on reset Load-dump detection R1 510 Ω VBatt 1 GND Frequency divider 3 ON 2 4 OFF Debouncing Relay-control output 5 TOGGLE Rev. 4771A–AUTO–11/03 Pin Configuration Figure 2. Pinning DIP8/SO8 GND 1 8 VS RELAY 2 7 VSTAB ON 3 6 OSC OFF 4 5 TOGGLE Pin Description 2 Pin Symbol 1 GND 2 RELAY 3 ON Function Reference point, ground Relay control output Switch-on input 4 OFF 5 TOGGLE Switch-off input 6 OSC RC oscillator input 7 VSTAB Stabilized voltage 8 VS Toggle input Supply voltage U6032B 4771A–AUTO–11/03 U6032B Functional Description Power Supply, Pin 8 To achieve interference protection and surge immunity, the supply voltage (pin 8) must be provided with an RC circuit as shown in Figure 3. The dropping resistor, R1, limits the current in case of overvoltage, whereas C1 smoothes the supply voltage at pin 8. Recommended values are: R1 = 510 W, C1 = 47 µF. An integrated Z-diode (14 V) protects the supply voltage, VS, thus enabling stable operation in a supply-voltage range of 6 V to 16 V, supplied by VBatt. It is possible to operate the integrated circuit with a 5 V supply, but it should be assured that there are no interference voltages. In this case, pin 7 is connected to pin 8 as shown in Figure 4 on page 4, and the R1C1 circuit is omitted. Figure 3. Basic Circuit for 12-V Supply and Oscillator VBatt 510 Ω R1 C2 C1 47 µF/ 16 V R2 8 7 6 5 U6032B 1 2 3 4 3 4771A–AUTO–11/03 Figure 4. Basic Circuit for VS = 5 V VS = 5 V C2 R2 8 6 7 5 VBatt U6032B 1 Oscillator, Pin 6 2 3 4 The oscillator frequency, f, is determined mainly by the R2C2 circuit. The resistance, R2, determines the charge time, and the integrated resistance (2 kW) is responsible for the discharge time. To ensure the stability of the oscillator frequency, it is recommended that the selected R2 value is remarkably greater than the internal resistance (2 kW), as the temperature response and the tolerances of the integrated resistance are considerably greater than the external resistance value. The oscillator frequency, f, is calculated as follows: 1 f = --------------t1 + t2 where t1 = charge time = a1 ´ R2 ´ C2 t2 = discharge time = a2 ´ 2 kW ´ C2 a1 and a2 are constants, e.g.: a1 = 0.833 and a2 = 1.551 when C2 = 470 pF to 10 nF a1 = 0.746 and a2 = 1.284 when C2 = 10 nF to 4700 nF The debounce time, t3, depends on the oscillator frequency, f, as follows: 1 t 3 = 6 ´ --t Table 1 shows the relationship between t3, C2, R2 and frequencies from 1 Hz to 20 kHz. 4 U6032B 4771A–AUTO–11/03 U6032B Relay-control Output The relay-control output is an open-collector Darlington circuit with an integrated 23-V Z-diode for limiting the inductive cut-off pulse of the relay coil. The maximum static collector current must not exceed 300 mA and the saturation voltage is typically 1.1 V at 200 mA. Interference Voltages and Load Dump The lC supply is protected by R1, C1, and an integrated Z-diode, while the inputs are protected by a series resistor, integrated Z-diode and RF capacitor (refer to Figure 6 on page 6). The relay-control output is protected by the integrated 23 V Z-diode in case of short interference peaks. It is switched to conductive condition for a battery voltage greater than 40 V in case of load dump. The output transistor is dimensioned so that it can withstand the generated current. Power-on Reset When the operating voltage is switched on, an internal power-on reset pulse (POR) is generated which sets the logic of the circuits to a defined initial condition. The relay output is disabled. Relay-control Output Behavior, Pin 2 The time functions (relay output) can be started or interrupted by the three inputs ON, OFF or TOGGLE (pins 3, 4 and 5, input circuit of these pins see Figure 6 on page 6). The relay becomes active if the time function is triggered, and the relay contact is interrupted after the elapse of the delay time, td. There are two input possibilities. Toggle Input, Pin 5 When the push-button (TOGGLE) switch, S1 , is pressed for the first time, the relay becomes active after the debounce time, t3, i.e., the relay output, pin 2, is active. Repeated operation of S1 causes the interruption of the relay contact, thus disabling the relay. Each operation of the toggle switch, S1, changes (alters) the condition of the relay output when the debounce time, td, is exceeded, i.e., the TOGGLE function. If the relay output is not disabled by pressing the switch S1, the output stays active. Figure 5. TOGGLE Function VBatt R1 510 Ω S1 C2 C1 R2 47 µF/ 16 V 8 7 20 kΩ 6 5 U6032B 1 2 3 4 5 4771A–AUTO–11/03 ON, OFF Inputs, Pins 3 and 4 To avoid simultaneous operation of both inputs, pin 3 (ON) and pin 4 (OFF), the use of a two-way contact with centre-off position with spring returns (also known as rocker-actuated switch) is recommended. Pressing the push-button switch (pin 3 ON) leads to an activation of the relay after the debounce time, t3, has ellapsed whereas the switching of pin 4 switch correspondingly leads to the de-energization of the relay. If the relay is not de-energized by the push-button switch, the output remains active. Combined operation “TOGGLE” and “ON/OFF” is not possible due to the fact that there is only one debouncing circuit. Debouncing is possible in both modes, i.e., whenever S1 is ON or OFF. Figure 6 shows the input circuit of U6032B. It has an integrated pull-down resistor (20 kW), RF capacitor (15 pF) and Z-diode (7 V). It reacts to voltages greater than 2 V. The external protective resistor has a value of 20 kW and the push-button switch, S, is connected to the battery as shown in the diagram. The contact current, I, is calculated as follows: V Batt – VZ I = ----------------------------- where VBatt = 12 V, VZ = 7 V R(= 20 k W ) (12 - 7) V I = ------------------------- » 0.25 mA 20 k W It can be increased by connecting a 5.6 kW resistor from the push-button switch to ground as shown in Figure 8 on page 7. Figure 6. Input Circuit 2V VBatt S Pin 3, 4, 5 R + 20 kΩ 20 kΩ 7V 15 pF Figure 7. ON/OFF Function VBatt S3 R1 510 Ω C1 C2 R2 47 µF/ 16 V 8 7 20 kΩ 6 20 kΩ 5 U6032B 1 6 2 3 4 U6032B 4771A–AUTO–11/03 U6032B Figure 8. Increasing the Contact Current by Parallel Resistors VBatt 2 mA 5.6 kΩ 8 7 6 5.6 kΩ 5 20 kΩ 20 kΩ U 6032 B 1 2 3 4 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Operating voltage, static, 5 minutes VBatt 24 V Ambient temperature range Tamb -40 to +125 °C Storage temperature range Tstg -55 to +125 °C Tj 150 °C Junction temperature Thermal Resistance Parameters Junction ambient Symbol Value Unit DIP8 TthJA 110 K/W SO8 TthJA 160 K/W 7 4771A–AUTO–11/03 Electrical Characteristics VBatt = 13.5 V, Tamb = 25°C, reference point ground, Figure 1 on page 1, unless otherwise specified Parameters Test Conditions Pin Symbol Min. Operating voltage R1 ³ 510 W t < 5 min t < 60 min 5 V supply Without R1, C1 Stabilized voltage VBatt = 12 V Undervoltage threshold Power-on reset Supply current All push buttons open 8 IS Internal Z-diode I8 = 10 mA 8 VZ VBatt 6 16 24 18 7, 8 V8, V7 4.3 6.0 V 7 V7 5.0 5.4 V VS 3.0 13.5 Typ. 5.2 Max. Unit V 4.2 V 1.3 2.0 mA 14 16 V 2 Relay Control Output Saturation voltage I2 = 200 mA I2 = 300 mA V2 Leakage current V2 = 14 V Ilkg Output current 1.2 1.5 2 V 100 µA I2 300 mA 1.5 A Output Pulse Current Load-dump pulse t £ 300 ms I2 Internal Z-diode I2 = 10 mA VZ 20 22 24 V Oscillator Input f = 0.001 to 40 kHz, see Table 1 Internal discharge resistance V6 = 5 V R6 1.6 2.0 2.4 kW Switching thresholds Lower Upper V6L V6H 0.9 2.8 1.1 3.1 1.4 3.5 V Input current V6 = 0 V -I6 1 µA 7 Cycles 6 Switching Times Debounce time t3 5 3, 4, 5 Inputs ON, OFF, TOGGLE Switching threshold voltage V3,4,5 1.6 2.0 2.4 V Internal Z-diode I3,4,5 = 10 mA V3,4,5 6.5 7.1 8.0 V Pull-down resistance V3,4,5 = 5 V R3,4,5 13 20 50 kW Table 1. Values for C2 and R2 for a Given Oscillator Frequency and Debounce Time 8 Frequency f (Hz) Debounce Time t3 (ms) C2 (nF) R2 (kW) 1 6000 4700 280 2 3000 1000 650 3 2000 1000 440 4 1500 1000 330 5 1200 1000 260 6 1000 1000 220 7 857 1000 190 8 750 1000 160 U6032B 4771A–AUTO–11/03 U6032B Table 1. Values for C2 and R2 for a Given Oscillator Frequency and Debounce Time (Continued) Frequency f (Hz) Debounce Time t3 (ms) C2 (nF) R2 (kW) 9 667 1000 140 10 600 1000 130 20 300 100 650 30 200 100 440 40 150 100 330 50 120 100 260 60 100 100 220 70 86 100 190 80 75 100 160 90 67 100 140 100 60 100 130 200 30 10 600 300 20 10 400 400 15 10 300 500 12 10 240 600 10 10 200 700 9.00 10 170 800 8.00 10 150 900 7.00 10 130 1000 6.00 10 120 2000 3.00 1 600 3000 2.00 1 400 4000 1.50 1 300 5000 1.20 1 240 6000 1.00 1 200 7000 0.86 1 170 8000 0.75 1 150 9000 0.67 1 130 10000 0.60 1 120 11000 0.55 1 110 12000 0.50 1 99 13000 0.46 1 91 14000 0.43 1 85 15000 0.40 1 79 16000 0.38 1 74 17000 0.35 1 70 18000 0.33 1 66 19000 0.32 1 62 20000 0.30 1 59 9 4771A–AUTO–11/03 Ordering Information Extended Type Number Package Remarks U6032B DIP8 – U6032B-FP SO8 – Package Information Package DIP8 Dimensions in mm 7.77 7.47 9.8 9.5 1.64 1.44 4.8 max 6.4 max 0.5 min 3.3 0.58 0.48 2.54 0.36 max 9.8 8.2 7.62 8 5 technical drawings according to DIN specifications 1 10 4 U6032B 4771A–AUTO–11/03 U6032B Package SO8 Dimensions in mm 5.2 4.8 5.00 4.85 3.7 1.4 0.25 0.10 0.4 1.27 6.15 5.85 3.81 8 0.2 3.8 5 technical drawings according to DIN specifications 1 4 11 4771A–AUTO–11/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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