TI CD74HCT356E

CD74HCT356
Semiconductor
High-Speed CMOS Logic
8-Input Multiplexer/Register, Three-State
SCLS459A - June 2001 - Revised May 2003
Features
Description
• Edge-Triggered Data Flip-Flops
- Transparent Select Latches
• Buffered Inputs
• 3-State Complementary Outputs
• Bus Line Driving Capability
• Typical Propagation Delay: VCC = 5V, CL = 15pF,
TA = 25oC
- Clock to Output = 22ns
• Fanout (Over Temperature Range)
- Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
• Wide Operating Temperature Range . . . -55oC to 125oC
• Balanced Propagation Delay and Transition Times
• Significant Power Reduction Compared to LSTTL
Logic ICs
• 4.5V to 5.5V Operation
• Direct LSTTL Input Logic Compatibility,
VIL= 0.8V (Max), VIH = 2V (Min)
• CMOS Input Compatibility, Il ≤ 1µA at VOL, VOH
The CD74HCT356 consists of data selectors/multiplexers that
select one of eight sources. The data select bits (S0, S1, and
S2) are stored in transparent latches that are enabled by a low
latch enable input (LE).
The data is stored in edge-triggered flip-flops that are
triggered by a low-to-high clock transition.
In both types the 3-state outputs are controlled by three
output-enable inputs (OE1, OE2, and OE3).
Ordering Information
PART NUMBER
TEMP. RANGE
(oC)
CD74HCT356E
-55 to 125
20 Ld PDIP
CD74HCT356M96
-55 to 125
20 Ld SOIC
NOTE: When ordering, use the entire part number. The suffix 96
denotes tape and reel.
Pinout
CD74HCT356
(PDIP or SOIC)
TOP VIEW
D7 1
20 VCC
D6 2
19 Y
D5 3
18 Y
D4 4
17 OE3
D3 5
16 OE2
D2 6
15 OE1
D1 7
14 S0
D0 8
13 S1
CP 9
12 S2
GND 10
11 LE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© 2003, Texas Instruments Incorporated
PACKAGE
1
CD74HCT356
Functional Diagram
S0
14
S1
13
S2
12
D0
D1
D2
D3
D4
D5
D6
D7
8
19
7
Y
6
5
4
3
18
2
Y
1
11
LE
15
OE1
16
OE2
17
OE3
9
CP
TRUTH TABLE
INPUTS
SELECT (NOTE 1)
CLOCK
OUTPUT ENABLES
OUTPUTS
S2
S1
S0
CP
OE1
OE2
OE3
Y
Y
X
X
X
X
H
X
X
Z
Z
X
X
X
X
X
H
X
Z
Z
X
X
X
X
X
X
L
Z
Z
L
L
L
↑
L
L
H
D0
D0
L
L
L
H or L
L
L
H
D0n
D0n
L
L
H
↑
L
L
H
D1
D1
L
L
H
H or L
L
L
H
D1n
D1n
L
H
L
↑
L
L
H
D2
D2
L
H
L
H or L
L
L
H
D2n
D2n
L
H
H
↑
L
L
H
D3
D3
L
H
H
H or L
L
L
H
D3n
D3n
H
L
L
↑
L
L
H
D4
D4
H
L
L
H or L
L
L
H
D4n
D4n
H
L
H
↑
L
L
H
D5
D5
H
L
H
H or L
L
L
H
D5n
D5n
H
H
L
↑
L
L
H
D6
D6
H
H
L
H or L
L
L
H
D6n
D6n
2
CD74HCT356
TRUTH TABLE (Continued)
INPUTS
SELECT (NOTE 1)
CLOCK
OUTPUT ENABLES
OUTPUTS
S2
S1
S0
CP
OE1
OE2
OE3
Y
Y
H
H
H
↑
L
L
H
D7
D7
H
H
H
H or L
L
L
H
D7n
D7n
H = High Voltage Level (Steady State); L = Low Voltage Level (Steady State); ↑ = Transition from Low to High Level;
X = Don’t Care; Z = High-Impedance State (Off State); D0n...D7n = the level of steady-state inputs D0 through D7, respectively,
before the most recent low-to-high transition of data control.
NOTE:
1. This column shows the input address setup with LE low.
Block Diagram
15
OE1
ENABLE LOGIC
16
OE2
17
OE3
9
CP
8
D0
7
D1
D
A
T
A
6
D2
5
D3
4
D4
3
D5
2
1
O
F
S
E
L
E
C
T
O
R
D6
1
D7
11
LE
14
S0
13
S1
12
S2
A
D
D
R
E
S
S
19
8
R
E
G
I
S
T
E
R
S
R
E
G
I
S
T
E
R
ADDRESS
DECODE
3
Y
18
Y
BUFFERS
CD74HCT356
Logic Diagram
15
OE1
16
OE2
OE3
1 OF 8 F/Fs
8 (7,6,5,4,
3,2,1)
D0
CP
CP
CP
P
N
P
N
CP
CP
P
N
P
18
Y
N
GND
CP
P
N
CP
VCC
17
P
N
CP
CP
CP
VCC
P
19
Y
N
9
TO 7 OTHER F/Fs
CP
SEL0
FROM 7 OTHER F/Fs
GND
TO 7 OTHER F/Fs
SEL0
SEL1
20
VCC
10
GND
LE
P
N
LE
14
S0
13
S1
12
S2
P
N
LE
LE
LE
LE
P
N
SL0
SL0
P
N
LE
LE
LE
LE
P
N
SL1
SL1
LE
P
N
SL2
SL2
LE
11
LE
LE
LE
FIGURE 1. LOGIC DIAGRAM
4
SEL2
SEL3
SEL4
SEL5
SEL6
SEL7
CD74HCT356
Absolute Maximum Ratings
Thermal Information
DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
DC Input Diode Current, IIK
For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Diode Current, IOK
For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
DC Drain Current, per Output, IO
For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA
DC Output Source or Sink Current per Output Pin, IO
For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA
Thermal Resistance (Typical, Note 2)
θJA (oC/W)
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . .
69
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . .
58
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Supply Voltage Range, VCC . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
2. The package thermal impedance is calculated in accordance with JESD 51-7.
DC Electrical Specifications
TEST
CONDITIONS
PARAMETER
25oC
-55oC TO 125oC
SYMBOL
VI (V)
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
High Level Input
Voltage
VIH
-
-
4.5 to
5.5
2
-
-
2
-
2
-
V
Low Level Input
Voltage
VIL
-
-
4.5 to
5.5
-
-
0.8
-
0.8
-
0.8
V
High Level Output
Voltage
CMOS Loads
VOH
VIH or
VIL
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
4
4.5
-
-
0.26
-
0.33
-
0.4
V
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or
VIL
Low Level Output
Voltage
TTL Loads
Input Leakage
Current
Quiescent Device
Current
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
3-State Leakage
Current
IO (mA) VCC (V)
-40oC TO 85oC
II
VCC to
GND
0
5.5
-
-
±0.1
-
±1
-
±1
µA
ICC
VCC or
GND
0
5.5
-
-
8
-
80
-
160
µA
∆ICC
(Note 3)
VCC
-2.1
-
4.5 to
5.5
-
100
360
-
450
-
490
µA
IOZ
VIL or
VIH
VO =
VCC or
GND
5.5
-
-
±0.5
-
±5
-
±10
µA
NOTE:
3. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.
5
CD74HCT356
Input Loading Table
INPUT
UNIT LOADS
D0-D7
0.50
S0, S1, S3
0.70
OE1, OE2
0.80
OE3
0.25
LE
0.25
CP
0.60
NOTE: Unit Load is ∆ICC limit specified in DC Electrical
Specifications table, e.g., 360µA max at 25oC.
Prerequisite For Switching Specifications
25oC
-40oC TO 85oC -55oC TO 125oC
SYMBOL
TEST
CONDITIONS
VCC
(V)
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
CP Pulse Width
tPLH, tPHL
-
4.5
16
20
-
25
-
30
-
ns
LE Pulse Width
PARAMETER
tPLH, tPHL
-
4.5
16
20
-
25
-
30
-
ns
Setup Times Dn → E
tSU
-
4.5
5
7
-
9
-
11
-
ns
Setup Times Sn → LE
tSU
-
4.5
5
7
-
9
-
11
-
ns
Hold Times Dn → E
tH
-
4.5
9
9
-
11
-
14
-
ns
Hold Times Sn → LE
tH
-
4.5
12
12
-
15
-
18
-
ns
6
CD74HCT356
Switching Specifications
Input tr, tf = 6ns
SYMBOL
TEST
CONDITIONS
Propagation Delay,
CP→ Y, Y
tPLH, tPHL
Propagation Delay,
Sn → Y, Y
tPLH, tPHL
Propagation Delay,
LE → Y, Y
tPLH, tPHL
Output Disabling Time
PARAMETER
Output Enabling Time
Output Transition Time
25oC
-40oC TO 85oC
-55oC TO
125oC
VCC (V)
TYP
MAX
MAX
MAX
UNITS
CL = 50pF
4.5
-
51
64
77
ns
CL = 15pF
5
22
-
-
-
ns
CL = 50pF
4.5
-
59
74
89
ns
CL = 15pF
5
25
-
-
-
ns
CL = 50pF
4.5
-
63
79
94
ns
CL = 15pF
5
25
-
-
-
ns
tPLZ, tPHZ
CL = 50pF
4.5
-
33
41
50
ns
tPLZ
CL = 15pF
5
13
-
-
-
ns
tPHZ
CL = 15pF
5
15
-
-
-
ns
tPLZ, tPHZ
CL = 50pF
4.5
-
34
43
51
ns
CL = 15pF
5
14
-
-
-
ns
CL = 50pF
4.5
-
12
15
18
ns
tTLH, tTHL
Input Capacitance
CIN
-
-
-
10
10
10
pF
3-State Capacitance
CO
-
-
-
20
20
20
pF
Power Dissipation
Capacitance (Notes 4, 5)
CPD
-
5
52
-
-
-
pF
NOTES:
4. CPD is used to determine the dynamic power consumption, per device.
5. PD = VCC2 (CPD + CL) where fi = Input Frequency, CL = Output Load Capacitance, VCC = Supply Voltage.
Test Circuits and Waveforms
tWL + tWH =
trCL = 6ns
tfCL = 6ns
I
fCL
2.7V
0.3V
1.3V
0.3V
tWL
1.3V
3V
2.7V
1.3V
0.3V
INPUT
3V
CLOCK
tf = 6ns
tr = 6ns
1.3V
GND
GND
tTHL
tWH
tTLH
90%
1.3V
10%
INVERTING
OUTPUT
NOTE: Outputs should be switching from 10% VCC to 90% VCC in
accordance with device truth table. For fMAX, input duty cycle = 50%.
tPHL
FIGURE 2. CLOCK PULSE RISE AND FALL TIMES AND
PULSE WIDTH
tPLH
FIGURE 3. TRANSITION TIMES AND PROPAGATION-DELAY
TIMES, COMBINATION LOGIC
7
CD74HCT356
Test Circuits and Waveforms
trCL
(Continued)
tfCL
tr
3V
2.7V
CLOCK
INPUT
1.3V
0.3V
tSU(H)
tTLH
90%
OUTPUTS
ENABLED
90%
90%
1.3V
1.3V
10%
tPLH
tREM
3V
SET, RESET
OR PRESET
OUTPUT HIGH
TO OFF
tTHL
0.3
GND
1.3V
10%
tPHZ
GND
tSU(L)
3V
tPZL
tPLZ
OUTPUT LOW
TO OFF
1.3V
1.3V
6ns
2.7
1.3
tH(L)
3V
1.3V
OUTPUT
tf
GND
tH(H)
DATA
INPUT
6ns
OUTPUT
DISABLE
tPZH
1.3V
OUTPUTS
DISABLED
OUTPUTS
ENABLED
FIGURE 5. 3-STATE PROPAGATION-DELAY WAVEFORM
tPHL
1.3V
GND
IC
CL
50pF
FIGURE 4. SETUP TIMES, HOLD TIMES, REMOVAL TIME,
AND PROPAGATION-DELAY TIMES FOR EDGE
TRIGGERED SEQUENTIAL LOGIC CIRCUITS
OTHER
INPUTS
TIED HIGH
OR LOW
OUTPUT
DISABLE
IC WITH
3-STATE
OUTPUT
OUTPUT
RL = 1kΩ
CL
50pF
VCC FOR tPLZ AND tPZL
GND FOR tPHZ AND tPZH
NOTE: Open-drain waveforms tPLZ and tPZL are the same as those for 3-state shown on the left. The test circuit is Output RL = 1kΩ to VCC,
CL = 50pF.
FIGURE 6. 3-STATE PROPAGATION-DELAY TEST CIRCUIT
8
PACKAGE OPTION ADDENDUM
www.ti.com
25-Feb-2005
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
CD74HCT356E
ACTIVE
PDIP
N
20
20
Pb-Free
(RoHS)
CU NIPDAU
Level-NC-NC-NC
CD74HCT356M96
ACTIVE
SOIC
DW
20
2000
Pb-Free
(RoHS)
CU NIPDAU
Level-2-250C-1 YEAR/
Level-1-235C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - May not be currently available - please check http://www.ti.com/productcontent for the latest availability information and additional
product content details.
None: Not yet available Lead (Pb-Free).
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens,
including bromine (Br) or antimony (Sb) above 0.1% of total product weight.
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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