PHILIPS BAL99

Surface Mount Switching Diode
COMCHIP
www.comchip.com.tw
BAV99 Thru BAW56
Voltage: 70 Volts
Current: 215mA
Features
Fast Switching Speed
Surface Mount Package Ideally Suited
for Automatic Insertio
For General Purpose Switching Applications
SOT-23
High Conductance
Mechanical data
.119 (3.0)
.110 (2.8)
.020 (0.5)
BAV99
BAL99
ANODE
.056 (1.40)
.047 (1.20)
1
1
2
.037(0.95) .037(0.95)
1
3
3
ANODE
ANODE
2
2
CATHODE
CATHODE
CATHODE
ANODE
CATHODE
.006 (0.15)max.
This diodes is also available in other
configurations including a dual common
cathode with type designation BAV70, a dual
common anodes with type designation
BAW56 and single chip inside with type
Designation BAL99
CATHODE
Top View
3
.044 (1.10)
.035 (0.90)
Approx. Weight: 0.008 gram
.006 (0.15)
.002 (0.05)
Case: SOT -23, Plastic
1
ANODE
2
ANODE
3
1
.020 (0.5)
.103 (2.6)
.086 (2.2)
.020 (0.5)
3
CATHODE
2
ANODE
CATHODE
BAV70
Dimensions in inches (millimeters)
BAW56
Maximum Ratings
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
Value
70
Units
VDC
IF
215
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Units
Thermal Characteristics
Characteristic
Total Device Dissipation FR– 5 Board(1)
T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
PD
RșJA
PD
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
RșJA
417
°C/W
TJ, Tstg
–55 to +150
°C
Symbol
V(BR)
Min
Max
Units
70
-
Vdc
-
30
-
2.5
-
50
-
1.5
715
Electrical Characterics (TA = 25°C unless otherwise noted)
Characteristic (OFF CHARACTERISTICS)
Reverse Breakdown Voltage ( I(BR) = 100 uAdc )
Reverse Voltage Leakage Current
VR = 25 Vdc, TJ = 150°C
V R = 70 Vdc
IR
V R = 70 Vdc, TJ = 150°C
Diode Capacitance (VR = 0, f = 1.0 MHz))
Forward Voltage
I F = 1.0 mAdc
I F = 10 mAdc
I F = 50 mAdc
CD
VF
I F = 150 mAdc
Reverse Recovery Time (IF = IR = 10 mAdc, I R(REC) = 1.0mAdc) RL = 100ȍ
1.FR–5 = 1.0 X 0.75X 0.062 in.
MDS0210001A
Trr
-
855
-
1000
-
1250
uAdc
pF
mV
nS
6.0
2.Aluminum = 0.4X 0.3X 0.024 in. 99.5% aluminum.
Page 1
Surface Mount Switching Diode
COMCHIP
www.comchip.com.tw
RATING AND CHARACTERISTIC CURVES (BAV99 Thru BAW56)
820 Ω
+10 V
2.0 k
tr
0.1 µF
100 µH
tp
IF
IF
t
trr
10%
t
0.1 µF
90%
DUT
50 Ω Input
Sampling
Oscilloscopes
50 Ω Output
Pulse
Generator
IR(REC) = 1.0 mA
IR
VR
Output Pulse
(IF = IR = 10 mA; Measured
at IR(REC) = 1.0 mA)
Input Signal
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
10
100
TA = 85°C
TA = 125°C
IR , Reverse Current (µA)
1.0
10
TA = – 40°C
1.0
TA = 25°C
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
VF, Forward Voltage (V)
1.0
0
1.2
10
Figure 2. Forward Voltage
20
30
VR, Reverse Voltage (V)
50
40
Figure 3. Leakage Current
0.68
CD, Diode Capacitance (pF)
IF, Forward Current (mA) (mA)
TA = 150°C
0.64
0.60
0.56
0.52
0
2
4
6
8
VR, Reverse Voltage (V)
Figure 4. Capacitance
MDS0210001A
Page 2