IRF IRF7404

PD - 9.1246C
IRF7404
HEXFET® Power MOSFET
l
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Generation V Technology
Ultra Low On-Resistance
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = -20V
RDS(on) = 0.040Ω
To p V ie w
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
10 Sec. Pulsed Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Units
-7.7
-6.7
-5.4
-27
2.5
0.02
± 12
-5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
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Maximum Junction-to-Ambient„
Typ.
Max.
Units
–––
50
°C/W
1
3/10/99
IRF7404
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Min.
-20
–––
–––
–––
-0.70
6.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.012 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.040
VGS = -4.5V, ID = -3.2A ƒ
Ω
––– 0.060
VGS = -2.7V, ID = -2.7A ƒ
––– –––
V
V DS = VGS, ID = -250µA
––– –––
S
V DS = -15V, ID = -3.2A
––– -1.0
VDS = -16V, VGS = 0V
µA
––– -25
VDS = -16V, VGS = 0V, TJ = 125°C
––– -100
VGS = -12V
nA
––– 100
VGS = 12V
––– 50
ID = -3.2A
––– 5.5
nC
VDS = -16V
––– 21
VGS = -4.5V, See Fig. 6 and 12 ƒ
14 –––
VDD = -10V
32 –––
ID = -3.2A
ns
100 –––
RG = 6.0Ω
65 –––
R D = 3.1Ω, See Fig. 10 ƒ
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
–––
2.5
–––
LS
Internal Source Inductance
–––
4.0
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1500 –––
––– 730 –––
––– 340 –––
IGSS
D
nH
Between lead tip
and center of die contact
pF
VGS = 0V
VDS = -15V
ƒ = 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
-3.1
–––
–––
-27
–––
–––
–––
–––
69
71
-1.0
100
110
A
V
ns
µC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = -2.0A, VGS = 0V ƒ
TJ = 25°C, I F = -3.2A
di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD ≤ -3.2A, di/dt ≤ -65A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
2
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7404
1000
1000
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BO TTOM - 1.5V
-ID , D rain-to-S ourc e C urrent (A)
-I D , D rain -to-S ou rc e C urre nt (A )
100
10
-1 .5 V
1
20 µ s P U L S E W ID TH
TJ = 25 °C
A
0.1
0.01
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
TO P
0.1
1
10
100
10
-1.5 V
1
20 µ s P U L S E W ID TH
TJ = 15 0°C
0.1
0.01
100
0.1
Fig 1. Typical Output Characteristics
2.0
R D S (o n) , D rain-to-S ou rc e O n R es is tan c e
(N orm aliz ed )
-I D , D ra in -to -Sou rce C u rren t (A )
TJ = 2 5 °C
T J = 1 5 0 °C
10
V D S = -1 5 V
2 0 µ s P U L S E W ID TH
2.0
2.5
3.0
3.5
4.0
4.5
-V G S , G a te-to -S o u rce V o lta g e (V )
Fig 3. Typical Transfer Characteristics
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A
100
Fig 2. Typical Output Characteristics
100
1.5
10
-VDS , D rain-to-S ource V oltage (V )
-V D S , D rain-to-S ourc e V oltage (V )
1
1
5.0
A
I D = -5 .3A
1.5
1.0
0.5
V G S = -4.5 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T J , J unc tion T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7404
V GS
C is s
C rs s
C o ss
=
=
=
=
10
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
-V G S , G ate-to-S ource V oltage (V )
C , Capacitance (pF)
3000
C iss
2000
C o ss
1000
C rss
0
10
8
6
4
2
FO R TE S T C IR C U IT
S E E FIG U R E 1 2
0
A
1
I D = -3 .2 A
V D S = -1 6V
0
100
10
20
30
40
50
A
60
Q G , T otal G ate C harge (nC )
-VD S , D rain-to-S ourc e V oltage (V )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I S D , R everse Drain C urrent (A )
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-II D , Drain Current (A)
TJ = 1 5 0°C
10
T J = 2 5°C
1
V G S = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V S D , S ource-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1.6
1ms
10
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7404
8.0
V DS
D .U .T .
V GS
-ID , Drain Current (A)
RD
RG
6.0
A
V
+ DD
-4 .5 V
P uls e W id th ≤ 1 µ s
D u ty F a c to r ≤ 0 .1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
P DM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7404
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
-4.5 V
QGS
D.U.T.
QGD
+VDS
VGS
VG
-3mA
Charge
Fig 12a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
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IRF7404
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+
**

• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS*
+
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
VGS=10V
[
] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
[
Re-Applied
Voltage
Body Diode
]
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
[
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
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7
IRF7404
Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)
DIM
D
-B-
5
8
7
6
5
1
2
3
0.25 (.010)
4
e
6X
M
A M
K x 45°
e1
θ
A
-C-
0.10 (.004)
0.25 (.010)
L
8X
A1
B 8X
M
6
C
8X
C A S B S
MILLIMETERS
MAX
MIN
MAX
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
5
H
E
-A-
INCHES
MIN
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.011
.019
0.28
0.48
L
0.16
.050
0.41
1.27
θ
0°
8°
0°
8°
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5
6.46 ( .255 )
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
Part Marking Information
SO-8
E XA M P L E : T H IS IS A N IR F 7 10 1
312
IN T E R N A T IO N A L
R E C T IF IE R
LOGO
D A T E C O D E (Y W W )
Y = L A S T D IG IT O F T H E Y E A R
W W = W EEK
XX XX
F7101
TOP
PART NUM BER
W AFER
LO T C O D E
(LA S T 4 D IG IT S )
BO TTO M
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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Data and specifications subject to change without notice. 3/99
8
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