White Electronic Designs WV3HG128M72AER-D6 ADVANCED* 1GB – 128Mx72 DDR2 SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION 240-pin, dual in-line memory module Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4300 and PC2-3200 Utilizes 800, 667, 533 and 400 MT/s DDR2 SDRAM components The WV3HG128M72AER is a 128Mx72 Double Data Rate DDR2 SDRAM high density module. This memory module consists of eighteen 128Mx4 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 240-pin DIMM FR4 substrate. VCC = VCCQ = 1.8V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture DLL to align DQ and DQS transitions with CK Multiple internal device banks for concurrent operation Supports duplicate output strobe (RDQS/RDQS#) Programmable CAS# latency (CL): 3, 4, 5 and 6 Adjustable data-output drive strength On-die termination (ODT) Posted CAS# latency: 0, 1, 2, 3 and 4 Serial Presence Detect (SPD) with EEPROM 64ms: 8,192 cycle refresh Gold edge contacts Product is lead-free RoHS compliant Package option * This product is under development, is not qualified or characterized and is subject to change or cancellation without notice. NOTE: Consult factory for availability of: • Vendor source control options • Industrial temperature option • 240 Pin DIMM • PCB – 29.97mm (1.18") Max OPERATING FREQUENCIES PC2-3200 PC2-4300 PC2-5300* PC2-6400* Clock Speed 200MHz 266MHz 333MHz 400MHz CL-tRCD-tRP 3-3-3 4-4-4 5-5-5 6-6-6 * Consult factory for availability March 2005 Rev. 0 1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG128M72AER-D6 ADVANCED PIN CONFIGURATION Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 Symbol VREF VSS DQ0 DQ1 VSS DQS0# DQS0 VSS DQ2 DQ3 VSS DQ8 DQ9 VSS DQS1# DQS1 VSS RESET# NC VSS DQ10 DQ11 VSS DQ16 DQ17 VSS DQS2# DQS2 VSS DQ18 DQ19 VSS DQ24 DQ25 VSS DQS3# DQS3 VSS DQ26 DQ27 VSS CB0 CB1 VSS DQS8# DQS8 VSS CB2 CB3 VSS VCCQ CKE0 VCC NC NC VCCQ A11 A7 VCC A5 March 2005 Rev. 0 Pin No. 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 Symbol A4 VCCQ A2 VCC VSS VSS VCC NC VCC A10/AP BA0 VCCQ WE# CAS# VCCQ NC NC VCCQ VSS DQ32 DQ33 VSS DQS4# DQS4 VSS DQ34 DQ35 VSS DQ40 DQ41 VSS DQS5# DQS5 VSS DQ42 DQ43 VSS DQ48 DQ49 VSS SA2 NC VSS DQS6# DQS6 VSS DQ50 DQ51 VSS DQ56 DQ57 VSS DQS7# DQS7 VSS DQ58 DQ59 VSS SDA SCL Pin No. 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 Symbol VSS DQ4 DQ5 VSS DM0/DQS9 NC/DQS9# VSS DQ6 DQ7 VSS DQ12 DQ13 VSS DM1/DQS10 NC/DQS10# VSS NC NC VSS DQ14 DQ15 VSS DQ20 DQ21 VSS DM2/DQS11 NC/DQS11# VSS DQ22 DQ23 VSS DQ28 DQ29 VSS DM3/DQS12 NC/DQS12# VSS DQ30 DQ31 VSS CB4 CB5 VSS DM8/DQS17 NC/DQS17# VSS CB6 CB7 VSS VCCQ NC VCC NC NC VCCQ A12 A9 VCC A8 A6 PIN NAMES Pin No. 181 182 183 184 185 186 187 188 189 190 191 192 193 194 195 196 197 198 199 200 201 202 203 204 205 206 207 208 209 210 211 212 213 214 215 216 217 218 219 220 221 222 223 224 225 226 227 228 229 230 231 232 233 234 235 236 237 238 239 240 Symbol VCCQ A3 A1 VCC CK0 CK0# VCC A0 VCC BA1 VCCQ RAS# S0# VCCQ ODT0 A13 VCC VSS DQ36 DQ37 VSS DM4/DQS13 NC/DQS13# VSS DQ38 DQ39 VSS DQ44 DQ45 VSS DM5/DQS14 NC/DQS14# VSS DQ46 DQ47 VSS DQ52 DQ53 VSS NC NC VSS DM6/DQS15 NC/DQS15# VSS DQ54 DQ55 VSS DQ60 DQ61 VSS DM7/DQS16 NC/DQS16# VSS DQ62 DQ63 VSS VCCSPD SA0 SA1 Pin Name CK0,CK0# CKE0 CB0-CB7 RAS# CAS# WE# S0# A0-A13 BA0,BA1 ODT0 SCL SDA SA0-SA2 DQ0-DQ63 DQS0-DQS17 DQS0#-DQS17# VCC VCCQ VSS VREF VCCSPD NC RESET# Function Clock Inputs, positive line Clock Enables Check Bits Row Address Strobe Column Address Strobe Write Enable Chip Selects Address Inputs SDRAM Bank Address On-die termination control Serial Presence Detect(SPD) Clock Input SPD Data Input/Output SPD address Data Input/Output Data strobes Data strobes complement Core and I/O Power (1.8V) I/O Power (1.8V) Ground Input/Output Reference SPD Power Spare pins, No connect Register Reset Input * These pins are not used in this module 2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG128M72AER-D6 ADVANCED FUNCTIONAL BLOCK DIAGRAM VSS RS0# DQS0 DQS0# DM0/DQS9 NC/DQS9# CS# DQS DQS# DQ0 DQ1 DQ2 DQ3 DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DQ8 DQ9 DQ10 DQ11 DM I/O 0 I/O 1 I/O 2 I/O 3 DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DQS1 DQS1# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DQ4 DQ5 DQ6 DQ7 DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DQ12 DQ13 DQ14 DQ15 DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM1/DQS10 NC/DQS10# DQS2 DQS2# DM2/DQS11 NC/DQS11# DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DQS3# DM3/DQS12 NC/DQS12# DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQS4 DQS4# DM4/DQS13 NC/DQS13# DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DQS5# DM5/DQS14 NC/DQS14# DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS6 DQS6# Serial PD DM6/DQS15 NC/DQS15# DQ48 DQ49 DQ50 DQ51 DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# SCL DQ52 DQ53 DQ54 DQ55 DQS7 DQS7# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# SDA WP A0 A1 A2 SA0 SA1 SA2 DM7/DQS16 NC/DQS16# DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 DQS8 DQS8# VCCSPD DM8/DQS17 NC/DQS17# DM I/O 0 I/O 1 I/O 2 I/O 3 CB0 CB1 CB2 CB3 S0# BA0 - BA1 A0 - A13 RAS# CAS# WE# CKE0 ODT0 RESET# CS# DQS DQS# CB4 CB5 CB6 CB7 1:2 R E G I S T E R DM I/O 0 I/O 1 I/O 2 I/O 3 CS# DQS DQS# CK0 RS0# : DDR2 SDRAMs RBA0 - RBA1 : DDR2 SDRAMs CK0# RA0 - RA13 : DDR2 SDRAMs RRAS# : DDR2 SDRAMs RESET# RCAS# : DDR2 SDRAMs P L L OE Serial PD VCC/VCCQ DDR2 SDRAMs VREF DDR2 SDRAMs VSS DDR2 SDRAMs PCK0-PCK6, PCK8, PCK9 CK : DDR2 SDRAMs PCK0#-PCK6#, PCK8#, PCK9# CK# : DDR2 SDRAMs PCK7 CK : Register PCK7# CK# : Register RWE# : DDR2 SDRAMs RCKE0 : DDR2 SDRAMs RODT0 : DDR2 SDRAMs RST# PCK7 PCK7# NOTE: All resistor values are 22 ohms unless otherwise specified. March 2005 Rev. 0 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG128M72AER-D6 ADVANCED RECOMMENDED DC OPERATING CONDITIONS All Voltages Referenced to VSS Rating Parameter Symbol Min. Type Max. Units VCC 1.7 1.8 1.9 V Supply Voltage for DLL VCCL 1.7 1.8 1.9 V 4 Supply Voltage for Output VCCQ 1.7 1.8 1.9 V 4 Input Reference Voltage VREF 0.49*VCCQ 0.50*VCCQ 0.51*VCCQ V 1, 2 Termination Voltage VTT VREF-0.04 VREF VREF+0.04 V 3 Supply Voltage Notes There is no specific device VCC supply voltage requirement for SSTL-1.8 compliance. However under all conditions VCCQ must be less than or equal to VCC. 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VCCQ of the transmitting device and VREF is expected to track variations in VCCQ. 2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC). 3. VTT of transmitting device must track VREF of receiving device. 4. AC parameters are measured with VCC, VCCQ and VCCDL tied together. ABSOLUTE MAXIMUM RATINGS SSTL_1.8V Symbol Parameter Rating Units Notes VCC Voltage on VCC pin relative to VSS - 1.0 V - 2.3 V V 5 VCCQ Voltage on VCCQ pin relative to VSS - 0.5 V - 2.3 V V 5 VCCL Voltage on VCCL pin relative to VSS - 0.5 V - 2.3 V V 5 VIN, VOUT Voltage on any pin relative to VSS - 0.5 V - 2.3 V V 5 -55 to +100 C 5, 6 TSTG Storage Temperature 5. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 6. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard. CAPACITANCE TA = 25°C, f = 1MHz, VCC = VCCQ = 1.8V Parameter Symbol Max Units Input Capacitance: CK, CK# CCK 11 pF Input Capacitance: CKE, CS# CI1 12 pF Input Capacitance: Addr. RAS#, CAS#, WE# CI2 12 pF Input/Output Capacitance: DQ, DQS, DM, DQS# CIO 10 pF March 2005 Rev. 0 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG128M72AER-D6 ADVANCED DDR2 IDD SPECIFICATIONS AND CONDITIONS Includes DDR2 SDRAM components only Symbol IDD0 IDD1 IDD2P IDD2Q IDD2N IDD3P IDD3N IDD6W IDD6R IDD5B IDD6 IDD7 March 2005 Rev. 0 Proposed Conditions 534 403 Units Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING 2,420 2,250 mA Operating one bank active-read-precharge current; IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address businputs are SWITCHING; Data pattern is same as IDD6W 2,640 2,400 mA 730 670 mA Precharge quiet standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputsare STABLE; Data bus inputs are FLOATING 1,110 1,110 mA Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING 1,090 1,060 mA Fast PDN Exit MRS(12) = 0mA 1,190 1,130 mA Slow PDN Exit MRS(12) = 1mA 600 570 mA Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING 1,840 1,730 mA Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING 3,550 2,810 mA Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD6W 3,230 2,730 mA Burst auto refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS\ is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING 3,610 3,430 mA 740 680 mA 5,540 5,210 mA Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Active power-down current; All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Self refresh current; CK and CK\ at 0V; CKE 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD6R; Refer to the following page for detailed timing conditions 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG128M72AER-D6 ADVANCED AC TIMING PARAMETERS 0°C ≤ TA ≤ +70°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V AC CHARACTERISTICS 534 PARAMETER Data Strobe Data Clock Clock cycle time CL = 4 CL = 3 CK high-level width CK low-level width Half clock period DQ output access time from CK/CK# Data-out high-impedance window from CK/CK# Data-out low-impedance window from CK/CK# DQ and DM input setup time relative to DQS DQ and DM input hold time relative to DQS A DQ and DM input pulse width (for each input) Data hold skew factor DQ…DQS hold, DQS to first DQ to go nonvalid, per access DQS input high pulse width DQS input low pulse width DQS output access time from CK/CK# DQS falling edge to CK rising … setup time DQS falling edge from CK rising … hold time DQS…DQ skew, DQS to last DQ valid, per group, per access DQS read preamble DQS read postamble DQS write preamble DQS write postamble Write command to first DQS latching transition 403 SYMBOL tCK (4) tCK (3) MIN 3,750 5,000 MAX 8,000 8,000 MIN 5,000 5,000 MAX 8,000 8,000 UNIT ps ps tCH 0.45 0.55 0.45 0.55 tCK tCL tHP tAC tHZ tLZ tDS tDH tDIPW tQHS tQH tDQSH tDQSL tDQSCK tDSS tDSH 0.45 MIN (tCH, tCL) -500 0.55 0.45 MIN (tCH, tCL) -600 0.55 tCK ps ps ps ps ps ps tCK ps ps tCK tCK ps tCK tCK tAC MIN 100 225 0.35 tAC MIN 150 275 0.35 400 tHP - tQHS 0.35 0.35 -450 0.2 0.2 tDQSQ tRPRE tRPST tWPRE tWPST tDQSS +500 tAC MAX tAC MAX +450 450 tHP - tQHS 0.35 0.35 -500 0.2 0.2 300 0.9 0.4 0.35 0.4 WL - 0.25 1.1 0.6 0.6 WL + 0.25 +600 tAC MAX tAC MAX 0.9 0.4 0.35 0.4 WL - 0.25 +500 350 ps 1.1 0.6 tCK tCK tCK tCK tCK 0.6 WL + 0.25 Continued on next page March 2005 Rev. 0 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG128M72AER-D6 ADVANCED AC TIMING PARAMETERS (cont'd) 0°C ≤ TA ≤ +70°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V Power-Down ODT Self Refresh Refresh Command and Address AC CHARACTERISTICS PARAMETER Address and control input pulse width for each input Address and control input setup time Address and control input hold time CAS# to CAS# command delay ACTIVE to ACTIVE (same bank) command ACTIVE bank a to ACTIVE bank b command ACTIVE to READ or WRITE delay ACTIVE to PRECHARGE command Internal READ to precharge command delay 6 Write recovery time Auto precharge write recovery + precharge time Internal WRITE to READ command delay PRECHARGE command period LOAD MODE command cycle time OCD Drive mode delay CKE low to CK,CK# uncertainty REFRESH to REFRESH command interval 534 MIN 0.6 250 375 2 55 7.5 15 40 7.5 15 tWR + tRP 7.5 15 2 0 tIS + tCK + tIH 70,000 tRFC 105 70,000 Average periodic refresh interval tREFI Exit self refresh to non-READ command Exit self refresh to READ command Exit self refresh timing reference ODT turn-on delay tXSNR tXSRD tIS tAOND tRFC (MIN) + 10 200 250 2 ODT turn-on tAON tAC (MIN) ODT turn-off delay tAOFD 2.5 ODT turn-off tAOF tAC (MIN) ODT turn-on (power-down mode) tAONPD tAC (MIN) + 2000 ODT turn-off (power-down mode) tAOFPD tAC (MIN) + 2000 ODT to power-down entry latency ODT power-down exit latency Exit active power-down to READ command, MR[bit12=0] Exit active power-down to READ command, MR[bit12=1] A Exit precharge power-down to any non-READ command. Exit precharge power-down to READ command. CKE minimum high/low time tANPD tAXPD tXARD tXARDS tXP tXPRD tCKE 3 8 2 6 - AL 2 6 - AL 3 March 2005 Rev. 0 403 SYMBOL tIPW tIS tIH tCCD tRC tRRD tRCD tRAS tRTP tWR tDAL tWTR tRP tMRD tOIT tDELAY MAX 12 MIN 0.6 350 475 2 55 7.5 15 40 7.5 15 tWR + tRP 10 15 2 0 tIS + tCK + tIH 70,000 105 70,000 ns 7.8 µs 7.8 7 2 tAC (MAX) + 1000 2.5 tAC (MAX) + 600 2 x tCK + tAC (MAX) + 1000 2.5 x tCK + tAC (MAX) + 1000 tRFC (MIN) + 10 200 350 2 tAC (MIN) 2.5 tAC (MIN) tAC (MIN) + 2000 tAC (MIN) + 2000 3 8 2 6 - AL 2 6 - AL 3 MAX 12 2 tAC (MAX) + 1000 2.5 tAC (MAX) + 600 2 x tCK + tAC (MAX) + 1000 2.5 x tCK + tAC (MAX) + 1000 UNIT tCK ps ps tCK ns ns ns ns ns ns ns ns ns tCK ns ns ns tCK ps tCK ps tCK ps ps ps tCK tCK tCK tCK tCK tCK tCK White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG128M72AER-D6 ADVANCED ORDERING INFORMATION FOR D6 Part Number Speed CAS Latency tRCD tRP Height* WV3HG128M72AER534D6 266MHz/533Mb/s 4 4 4 29.97mm (1.18") WV3HG128M72AER403D6 200MHz/400Mb/s 3 3 3 29.97mm (1.18") NOTES: • RoHS products. (“G” = RoHS Compliant) • Vendor specific part numbers are used to provide memory component source control. The place holder for this is shown as a lower case "x" in the part numbers above and is to be replaced with respective vendors code. Consult factory for qualified sourcing options. (M = Micron, S = Samsung & consult factory for others) • Consult factory for availability of industrial temperature (-40°C to 85°C) option PACKAGE DIMENSIONS FOR D6 Front View 133.35 (5.25) 3.00 (0.118) Register 4.00 (0.157) 29.97 (1.18) PLL 4.00 (0.157) 0.80 ± 0.002 (0.031 ± 0.002) 4.00 (0.157) 1.50 ± 0.10 (0.059 ± 0.004) 1.00 (0.039) 2.50 ± 0.20 (0.098 ± 0.007) 1.27 ± 0.10 0.05 ± .004 5.00 (0.196) 1.7 (0.066) MAX Back View 55.00 (2.165) Register 63.00 (2.48) * ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES) March 2005 Rev. 0 8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG128M72AER-D6 ADVANCED PART NUMBERING GUIDE WV 3 H G 128M 72 A E R xxx D6 x G WEDC MEMORY DDR 2 GOLD DEPTH BUS WIDTH x4 1.8V REGISTERED SPEED (MHz) PACKAGE 240 PIN COMPONENT VENDOR NAME (M = Micron) (S = Samsung) G = ROHS COMPLIANT March 2005 Rev. 0 9 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WV3HG128M72AER-D6 ADVANCED Document Title 1GB – 128Mx72 DDR2 SDRAM REGISTERED, w/PLL Revision History Rev # History Release Date Status Rev 0 Created March 2005 Advanced March 2005 Rev. 0 10 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com