VISHAY P6SMB7.5A

P6SMB Series
www.vishay.com
Vishay General Semiconductor
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-214AA (SMB)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VWM
5.8 V to 459 V
VBR (uni-directional)
6.8 V to 540 V
VBR (bi-directional)
6.8 V to 220 V
PPPM
600 W
PD
5.0 W
IFSM (uni-directional only)
100 A
TJ max.
150 °C
Polarity
Uni-directional, bi-directional
Package
DO-214AA (SMB)
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. P6SMB10CA).
Electrical characteristics apply in both directions.
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Base P/NHE3 - RoHS compliant and AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
PPPM
600
W
Peak pulse current with a 10/1000 μs waveform (1)
IPPM
See next table
A
Power dissipation on infinite heatsink at TA = 50 °C
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
PD
5.0
W
IFSM
100
A
TJ, TSTG
- 65 to + 150
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2.
A
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 14-Dec-12
Document Number: 88370
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P6SMB Series
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PART
NUMBER
DEVICE
MARKING
CODE
UNI
BI
BREAKDOWN
STAND-OFF
VOLTAGE
TEST
VBR AT IT (1) CURRENT VOLTAGE
VWM
(V)
IT
(V)
(mA)
MIN. MAX.
P6SMB6.8A
6V8A 6V8C 6.45
7.14
10
5.80
P6SMB7.5A
7V5A 7V5C 7.13
7.88
10
6.40
P6SMB8.2A
8V2A 8V2C 7.79
8.61
10
7.02
P6SMB9.1A
9V1A 9V1C 8.65
9.55
1.0
7.78
P6SMB10A
10A 10C
9.50
10.5
1.0
8.55
P6SMB11A
11A 11C
10.5
11.6
1.0
9.40
P6SMB12A
12A 12C
11.4
12.6
1.0
10.2
P6SMB13A
13A 13C
12.4
13.7
1.0
11.1
P6SMB15A
15A 15C
14.3
15.8
1.0
12.8
P6SMB16A
16A 16C
15.2
16.8
1.0
13.6
P6SMB18A
18A 18C
17.1
18.9
1.0
15.3
P6SMB20A
20A 20C
19.0
21.0
1.0
17.1
P6SMB22A
22A 22C
20.9
23.1
1.0
18.8
P6SMB24A
24A 24C
22.8
25.2
1.0
20.5
P6SMB27A
27A 27C
25.7
28.4
1.0
23.1
P6SMB30A
30A 30C
28.5
31.5
1.0
25.6
P6SMB33A
33A 33C
31.4
34.7
1.0
28.2
P6SMB36A
36A 36C
34.2
37.8
1.0
30.8
P6SMB39A
39A 39C
37.1
41.0
1.0
33.3
P6SMB43A
43A 43C
40.9
45.2
1.0
36.8
P6SMB47A
47A 47C
44.7
49.4
1.0
40.2
P6SMB51A
51A 51C
48.5
53.6
1.0
43.6
P6SMB56A
56A 56C
53.2
58.8
1.0
47.8
P6SMB62A
62A 62C
58.9
65.1
1.0
53.0
P6SMB68A
68A 68C
64.6
71.4
1.0
58.1
P6SMB75A
75A 75C
71.3
78.8
1.0
64.1
P6SMB82A
82A 82C
77.9
86.1
1.0
70.1
P6SMB91A
91A 91C
86.5
95.5
1.0
77.8
P6SMB100A
100A 100C 95.0
105
1.0
85.5
P6SMB110A
110A 110C 105
116
1.0
94.0
P6SMB120A
120A 120C 114
126
1.0
102
P6SMB130A
130A 130C 124
137
1.0
111
P6SMB150A
150A 150C 143
158
1.0
128
P6SMB160A
160A 160C 152
168
1.0
136
P6SMB170A
170A 170C 162
179
1.0
145
P6SMB180A
180A 180C 171
189
1.0
154
P6SMB200A
200A 200C 190
210
1.0
171
P6SMB220A
220A 220C 209
231
1.0
185
P6SMB250A
250A
237
263
1.0
214
P6SMB300A
300A
285
315
1.0
256
P6SMB350A
350A
333
368
1.0
300
P6SMB400A
400A
380
420
1.0
342
P6SMB440A
440A
418
462
1.0
376
P6SMB480A
480A
456
504
1.0
408
P6SMB510A
510A
485
535
1.0
434
P6SMB540A
540A
513
567
1.0
459
Notes
(1) Pulse test: t  50 ms
p
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) For bi-directional types with V
WM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE CA62.35
(5) V = 3 V at I = 50 A (uni-directional only)
F
F
Revision: 14-Dec-12
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (3)
(μA)
1000
500
200
50
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (2)
(A)
57.1
53.1
49.6
44.8
41.4
38.5
35.9
33.0
28.3
26.7
23.8
21.7
19.6
18.1
16.0
14.5
13.1
12.0
11.1
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
4.8
4.4
3.9
3.6
3.4
2.9
2.7
2.6
2.4
2.2
1.8
1.74
1.45
1.24
1.10
1.00
0.91
0.86
0.81
MAXIMUM
MAXIMUM
CLAMPING TEMPERATURE
COEFFICIENT
VOLTAGE
OF VBR
AT IPPM
VC (V)
(%/°C)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103
113
125
137
152
165
179
207
219
234
246
274
328
344
414
482
548
602
658
698
740
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Document Number: 88370
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P6SMB Series
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Typical thermal resistance, junction to ambient air (1)
RJA
100
Typical thermal resistance, junction to lead
RJL
20
UNIT
°C/ W
Note
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
VOLTAGE RANGE
(V)
UNIT
WEIGHT
(g)
UNI -
BI -
0.096
6.8 to 540
P6SMB6.8A-E3/52
P6SMB6.8A-E3/5B
PACKAGE
CODE
BASE
QUANTITY
DELIVERY MODE
6.8 to 220
52
750
7" diameter plastic tape and reel
5B
3200
13" diameter plastic tape and reel
0.096
6.8 to 540
6.8 to 220
(1)
0.096
6.8 to 540
6.8 to 220
52
750
7" diameter plastic tape and reel
P6SMB6.8AHE3/5B (1)
0.096
6.8 to 540
6.8 to 220
5B
3200
13" diameter plastic tape and reel
P6SMB250AHE3_A/H (1)
0.096
250 to 540
-
H
750
7" diameter plastic tape and reel
0.096
250 to 540
-
I
3200
13" diameter plastic tape and reel
P6SMB6.8AHE3/52
P6SMB250AHE3_A/I
(1)
Note
AEC-Q101 qualified
(1)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
PPPM - Peak Pulse Power (kW)
100
10
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
100
75
50
25
0
0
25
50
75
100
125
150
175
200
td - Pulse Width (s)
TJ - Initial Temperature (°C)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Revision: 14-Dec-12
Document Number: 88370
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P6SMB Series
www.vishay.com
tr = 10 µs
Peak Value
IPPM
100
200
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
Peak Forward Surge Current (A)
IPPM - Peak Pulse Current, % IRSM
150
Vishay General Semiconductor
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
td
10
0
1.0
0
3.0
2.0
4.0
t - Time (ms)
1
10
100
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
CJ - Junction Capacitance (pF)
6000
Measured at
Zero Bias
1000
VR, Measured at
Stand-Off Voltage VWM
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Uni-Directional
Bi-Directional
10
1
10
100
200
VWM - Reverse Stand-Off Voltage (V)
Fig. 4 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
100
10
1.0
0.1
0.001
0.01
0.1
1
10
100
1000
tp - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
Revision: 14-Dec-12
Document Number: 88370
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P6SMB Series
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Mounting Pad Layout
Cathode Band
0.085 (2.159)
MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.220 REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 14-Dec-12
Document Number: 88370
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000