DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully specified at + 3 V, + 5 V and ± 5 V. All control logic inputs have guaranteed 2 V logic high limits when operating from + 5 V or ± 5 V supplies and 1.4 V when operating from a 3 V supply. The DG636 switches conduct equally well in both directions and offer rail to rail analog signal handling. < 1 pC low charge injection, coupled with very low switch capacitance and leakage current makes this product ideal for use in precision instrumentation applications. Operating temperature range is specified from - 40 °C to + 125 °C. The DG636 is available in 14 lead TSSOP and the space saving 1.8 mm x 2.6 mm miniQFN package. • Ultra low charge injection (± 0.5 pC, typ. over the full analog signal range) • Leakage current < 0.5 nA max. at 85 °C RoHS (for DG636EQ-T1-E3) COMPLIANT • Low switch capacitance (Csoff, 2 pF typ.) • Low RDS(on) - 115 max. • Fully specified with single supply operation at 3.0 V, 5.0 V and dual supplies at ± 5.0 V • Low voltage, 2.5 V CMOS/TTL compatible • 600 MHz, - 3 dB bandwidth • Excellent isolation and crosstalk performance (typ. > - 60 dB at 10 MHz) • Fully specified from - 40 °C to 85 °C and - 40 °C to + 125 °C • 14 pin TSSOP and 16 pin miniQFN package (1.8 mm x 2.6 mm) • Compliant to RoHS directive 2002/95/EC APPLICATIONS • • • • • • High-end data acquisition Medical instruments Precision instruments High speed communications applications Automated test equipment Sample and hold applications FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG636 mQFN-16 Rxx Pin 1 Device Marking: Rxx for DG636 (miniQFN16) xx = Date/Lot Traceability Code ENABLE 1 V- DG636 TSSOP14 A0 NC NC A1 16 15 14 13 14 A1 13 GND 3 12 V+ A0 1 ENABLE 2 V- 12 GND 2 11 V+ S1A 3 10 S2A S1A 4 11 S2A S1B 4 9 S2B S1B 5 11 S2B 8 D1 6 9 D2 D2 NC 7 8 NC Logic 5 D1 6 77 NC NC Top View Logic Top View ENABLE = Hi, all switches are controlled by addr pins. ENABLE = Lo, all switches are off. Document Number: 69901 S10-1815-Rev. D, 02-Aug-10 www.vishay.com 1 DG636 Vishay Siliconix TRUTH TABLE Selected Input On Switches Enable Input A1 A0 DG636 L X X All Switches Open H L L D1 to S1A, D2 to S2A H L H D1 to S1B, D2 to S2A H H L D1 to S1A, D2 to S2B H H H D1 to S1B, D2 to S2B Package 14 pin TSSOP Part Number DG636EQ-T1-E3 16 pin miniQFN DG636EN-T1-E4 ORDERING INFORMATION Temp. Range - 40 °C to 125 °Ca Notes: a. - 40 °C to 85 °C datasheet limits apply. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Limit V+ to V- Unit 14 GND to V- 7 V (V-) - 0.3 to (V+) + 0.3 or 30 mA, whichever occurs first a Digital Inputs , VS, VD Continuous Current (Any Terminal) 30 Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) 100 Storage Temperature mA - 65 to 150 Power Dissipation (Package)b Thermal Resistance (Package)b 14 pin TSSOPc 450 16 pin miniQFNd, e 525 14 pin TSSOP 178 16 pin miniQFN 152 °C mW °C/W Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 5.6 mW/°C above 70 °C. d. Derate 6.6 mW/°C above 70 °C. e. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. SPECIFICATIONS FOR DUAL SUPPLIES Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = - 5 V VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b - 40 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d 5 -5 Max.d Unit 5 V Analog Switch Analog Signal Rangee On-Resistance On-Resistance Match On-Resistance Flatness www.vishay.com 2 VANALOG Full RDS(on) IS = 1 mA, VD = - 3 V, 0 V, + 3 V Room Full 70 115 160 115 140 RON IS = 1 mA, VD = ± 3 V Room Full 1 5 6.5 5 6.5 RFLATNESS IS = 1 mA, VD = - 3 V, 0 V, + 3 V Room Full 10 20 33 20 22 -5 Document Number: 69901 S10-1815-Rev. D, 02-Aug-10 DG636 Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = - 5 V VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b - 40 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d 5 -5 Max.d Unit 5 V Analog Switch Analog Signal Rangee VANALOG Full RDS(on) IS = 1 mA, VD = - 3 V, 0 V, + 3 V Room Full 70 115 160 115 140 RON IS = 1 mA, VD = ± 3 V Room Full 1 5 6.5 5 6.5 RFLATNESS IS = 1 mA, VD = - 3 V, 0 V, + 3 V Room Full 10 20 33 20 22 Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Room Full ± 0.01 -1 - 18 1 18 -1 -2 1 2 Room Full ± 0.01 -1 - 18 1 18 -1 -2 1 2 On-Resistance Flatness Switch Off Leakage Current (for 14 pin TSSOP) Channel On Leakage Current (for 14 pin TSSOP) Switch Off Leakage Current (for 16 pin miniQFN) Channel On Leakage Current (for 16 pin miniQFN) IS(off) ID(off) ID(on) IS(off) ID(off) V+ = 5.5 V, V- = - 5.5 V VD = ± 4.5 V, VS = 4.5 V V+ = 5.5 V, V- = - 5.5 V, VS = VD = ± 4.5 V V+ = 5.5 V, V- = - 5.5 V VD = ± 4.5 V, VS = 4.5 V ± On-Resistance Match ± On-Resistance -5 ID(on) V+ = 5.5 V, V- = - 5.5 V, VS = VD = ± 4.5 V Room Full ± 0.01 -1 - 18 1 18 -1 -2 1 2 Input Current, VIN Low IIL VIN A0, A1 and ENABLE Under Test = 0.8 V Full 0.005 - 0.1 0.1 - 0.1 0.1 Input Current, VIN High IIH VIN A0, A1 and ENABLE Under Test = 2.0 V Full 0.005 - 0.1 0.1 - 0.1 0.1 Input Capacitancee CIN f = 1 MHz Room 3.4 tTRANS VS(CLOSE) = 3 V, VS(OPEN) = 0.0 V, RL = 300 , CL = 35 pF Room Full 20 70 105 70 80 Room Full 16 60 90 60 65 Room Full 15 52 76 52 56 15 nA Digital Control µA pF Dynamic Characteristics Transition Time Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay Charge Injectione Off Isolatione RL = 300 , CL = 35 pF VS = ± 3 V tD VS = 3 V RL = 300 , CL = 35 pF Room Full Q Vg = 0 V, Rg = 0 , CL = 1 nF Room 0.1 pC OIRR RL = 50 , CL = 5 pF, f = 10 MHz Room - 58 dB Room 610 MHz Room - 88 dB 5 BW RL = 50 Channel-to-Channel Crosstalke XTALK RL = 50 , CL = 5 pF, f = 10 MHz Source Off Capacitancee CS(off) Room 2.1 Drain Off Capacitancee CD(off) Room 4.2 Channel On Capacitancee CD(on) Room 11.3 Room 0.01 Bandwidthe Total Harmonic Distortione Document Number: 69901 S10-1815-Rev. D, 02-Aug-10 ns THD f = 1 MHz Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 5 pF % www.vishay.com 3 DG636 Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = - 5 V VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b - 40 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d Max.d Unit Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current VIN = 0 V, or V+ IGND Room Full 0.001 0.5 1 0.5 1 Room Full - 0.001 - 0.5 -1 - 0.5 -1 Room Full - 0.001 - 0.5 -1 - 0.5 -1 µA SPECIFICATIONS FOR SINGLE SUPPLY Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = 0 V VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b - 40 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d Max.d Unit 5 5 V Analog Switch Analog Signal Rangee VANALOG Full RDS(on) IS = 1 mA, VD = + 3.5 V Room Full 120 170 250 170 200 On-Resistance Match RON IS = 1 mA, VD = + 3.5 V Room Full 3 5 12 5 10 Switch Off Leakage Current (for 14 pin TSSOP) IS(off) Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Room Full ± 0.01 -1 - 18 1 18 -1 -2 1 2 Room Full ± 0.01 -1 - 18 1 18 -1 -2 1 2 On-Resistance Channel On Leakage Current (for 14 pin TSSOP) Switch Off Leakage Current (for 16 pin miniQFN) Channel On Leakage Current (for 16 pin miniQFN) ID(off) ID(on) IS(off) ID(off) V+ = 5.5 V, V- = 0 V VD = 1 V/4.5 V, VS = 4.5 V/1 V V+ = 5.5 V, V- = 0 V VS = VD = 1 V/4.5 V V+ = 5.5 V, V- = 0 V VD = 1 V/4.5 V, VS = 4.5 V/1 V ID(on) V+ = 5.5 V, V- = 0 V, VS = VD = 1 V/4.5 V Room Full ± 0.01 -1 - 18 1 18 -1 -2 1 2 Input Current, VIN Low IL VIN A0, A1 and ENABLE Under Test = 0.8 V Full 0.005 - 0.1 0.1 - 0.1 0.1 Input Current, VIN High IH VIN A0, A1 and ENABLE Under Test = 2.0 V Full 0.005 - 0.1 0.1 - 0.1 0.1 CIN f = 1 MHz Room 4.3 Room Full 36 75 120 75 95 Room Full 30 70 102 70 80 47 88 47 63 nA Digital Control Input Capacitance µA pF Dynamic Characteristics Transition Time tTRANS Enable Turn-On Time tON(EN) Enable Turn-Off Time tOFF(EN) Room Full 17 tBMM Room Full 23 CL = 1 nF, RGEN = 0 , VGEN = 0 V Full 0.1 f = 10 MHz, RL = 50 , CL = 5 pF Room - 58 Room - 81 Room 520 Break-Before-Make-Time Charge Injection Q Off-Isolatione OIRR Crosstalke XTALK Bandwidthe BW www.vishay.com 4 VS(CLOSE) = 3 V, VS(OPEN) = 0.0 V, RL = 300 , CL = 35 pF RL = 50 5 ns 5 pC dB MHz Document Number: 69901 S10-1815-Rev. D, 02-Aug-10 DG636 Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = 0 V VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b - 40 °C to 125 °C - 40 °C to 85 °C Typ.c Min.d Max.d Min.d Max.d Unit Dynamic Characteristics Total Harmonic Distortion THD Source Off Capacitancee CS(off) Drain Off Capacitancee CD(off) Channel On Capacitancee CD(on) Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 Room 0.009 % 2.5 f = 1 MHz Room 6.4 pF 11.3 Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current VIN = 0 V, or V+ IGND Room Full 0.001 0.5 1 0.5 1 Room Full - 0.001 - 0.5 -1 - 0.5 -1 Room Full - 0.001 - 0.5 -1 - 0.5 -1 µA SPECIFICATIONS FOR SINGLE SUPPLY Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, V- = 0 V VIN A0, A1 and ENABLE = 1.4 V, 0.6 Va Temp.b - 40 °C to + 125 °C - 40 °C to + 85 °C Typ.c Min.d Max.d Min.d Max.d Unit V Analog Switch Analog Signal Rangee VANALOG Full 3 3 RDS(ON) IS = 1 mA, VD = + 1.5 V Room Full 200 245 325 245 290 On-Resistance Match RON IS = 1 mA, VD = + 1.5 V Room Full 5 6 13 11 6 Switch Off Leakage Current (for 14 pin TSSOP) IS(off) Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Room Full ± 0.01 -1 - 18 1 18 -1 -2 1 2 Room Full ± 0.01 -1 - 18 1 18 -1 -2 1 2 On-Resistance Channel On Leakage Current (for 14 pin TSSOP) Switch Off Leakage Current (for 16 pin miniQFN) Channel On Leakage Current (for 16 pin miniQFN) ID(off) ID(on) IS(off) ID(off) V+ = 3 V, V- = 0 V VD = 1 V/3 V, VS = 3 V/1 V V+ = 3 V, V- = 0 V VS = VD = 1 V/3 V V+ = 3.3 V, V- = 0 V VD = 1 V/3 V, VS = 3 V/1 V ID(on) V+ = 3.3 V, V- = 0 V, VS = VD = 1 V/3 V Room Full ± 0.01 -1 - 18 1 18 -1 -2 1 2 Input Current, VIN Low IL VIN A0, A1 and ENABLE Under Test = 0.6 V Full 0.005 -1 1 -1 1 Input Current, VIN High IH VIN A0, A1 and ENABLE Under Test = 1.4 V Full 0.005 -1 1 -1 1 CIN f = 1 MHz Room 4.3 nA Digital Control Input Capacitance Document Number: 69901 S10-1815-Rev. D, 02-Aug-10 µA pF www.vishay.com 5 DG636 Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 3 V, V- = 0 V VIN A0, A1 and ENABLE = 1.4 V, 0.6 Va Temp.b - 40 °C to + 125 °C - 40 °C to + 85 °C Typ.c Min.d Max.d Min.d Max.d Unit Dynamic Characteristics Room Full 95 130 190 130 160 Room Full 77 108 161 108 131 tOFF(EN) Room Full 35 76 112 76 88 tBMM Room Full 45 Full 0.24 Transition Time tTRANS Enable Turn-On Time tON(EN) Enable Turn-Off Time Break-Before-MakeTime Charge Injection e Q CL = 1 nF, RGEN = 0 , VGEN = 0 V f = 10 MHz, RL = 50 , CL = 5 pF Off-Isolation OIRR Crosstalke XTALK Bandwidthe BW THD Total Harmonic Distortion VS(CLOSE) = 3.0 V, VS(OPEN) = 0.0 V, RL = 300 , CL = 35 pF 5 ns 5 pC Room - 57 Room - 93 RL = 50 Room 442 MHz Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 Room 0.09 % Room Source Off Capacitancee CS(off) 2.5 Drain Off Capacitancee CD(off) 6.4 Channel On Capacitancee CD(on) f = 1 MHz dB pF 11.7 Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current IGND VIN = 0 V, or V+ Room Full 0.001 0.5 1 0.5 1 Room Full - 0.001 - 0.5 -1 - 0.5 -1 Room Full - 0.001 - 0.5 -1 - 0.5 -1 µA Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 6 Document Number: 69901 S10-1815-Rev. D, 02-Aug-10 DG636 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 350 160 T = 25 °C IS = 1 mA VCC = 2.7 V 300 RON - On-Resistance () VCC = 3.0 V RON - On-Resistance () V+ = + 2.7 V V- = - 2.7 V 140 250 200 VCC = 5.0 V 150 VCC = 13.2 V 100 50 V+ = + 5.0 V V- = - 5.0 V 100 80 60 40 T = 25 °C IS = 1 mA 20 0 -8 0 0 2 4 6 8 10 12 14 -6 -4 -2 0 2 4 6 8 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. VD (Single Supply Voltage) On-Resistance vs. VD (Dual Supply Voltage) 500 400 V+ = 3.0 V, V- = 0 V IS = 1 mA 400 + 125 °C V+ = 5.0 V, V- = 0 V IS = 1 mA 350 + 25 °C - 40 °C RON - On-Resistance () 450 RON - On-Resistance () V+ = + 6.2 V V- = - 6.2 V 120 350 + 85 °C 300 250 200 150 300 250 + 125 °C + 85 °C 200 + 25 °C - 40 °C 150 100 100 50 50 0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 VD - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature 2.5 3 3.5 4 4.5 5 On-Resistance vs. Analog Voltage and Temperature 10 mA 250 V+ = 5.0 V, V- = - 5.0 V IS = 1 mA 225 1 mA 200 V+ = + 5.0 V V- = - 5.0 V 100 µA 175 Supply Current (A) RON - On-Resistance () 2 VD - Analog Voltage (V) + 125 °C 150 + 85 °C 125 + 25 °C - 40 °C 100 75 10 µA I+ 1 µA I100 nA 1 nA 50 100 pA 25 10 pA 0 -5 IGND 1 pA -4 -3 -2 -1 0 1 2 3 4 5 VD - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature Document Number: 69901 S10-1815-Rev. D, 02-Aug-10 10 100 1K 10K 100K 1M 10M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency www.vishay.com 7 DG636 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 000 100 000 V+ = 13.2 V V- = 0 V V+ = + 5.0 V V- = - 5.0 V ID(off) 10 000 Leakage Current (pA) Leakage Current (pA) 1000 1000 ID(off) 100 ID(on) 1 - 60 - 40 - 20 0 20 40 60 80 ID(on) 10 IS(off) 10 IS(off) 100 1 - 60 - 40 - 20 100 120 140 0 Leakage Current vs. Temperature 0 1.0 80 100 120 140 V+ = + 3.0 V V- = 0 V 0.8 Q - Charge Injection (pC) LOSS, OIRR, XTALK (dB) 60 1.2 LOSS - 10 - 20 V+ = ± 5.0 V RL = 50 - 40 - 50 OIRR - 60 XTALK - 70 - 80 0.6 V+ = + 5.0 V V- = - 5.0 V 0.4 0.2 V+ = + 13.2 V V- = 0 V 0 - 0.2 V+ = + 12 V V- = 0 V - 0.4 - 0.6 V+ = + 5.0 V V- = 0 V - 0.8 - 90 -1 - 100 100K 1M 10M 100M - 1.2 - 6 - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VS - Analog Voltage (V) 1G Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Charge Injection vs. Analog Voltage 3.0 100 RL = 600 VSignal = 1 VRMS 2.5 VT - Switching Threshold (V) 10 THD (%) 40 Leakage Current vs. Temperature 10 - 30 20 Temperature (°C) Temperature (°C) 1 V+ = 3.0 V V+ = 5.0 V V± = ± 5.0 V 0.1 0.01 2.0 1.5 1.0 0.5 0.001 10 0.0 100 1000 10 000 Frequency (Hz) Total Harmonic Distortion vs. Frequency www.vishay.com 8 100 000 0 2 4 6 8 10 12 14 V+ - Supply Voltage (V) Switching Threshold vs. Supply Voltage Document Number: 69901 S10-1815-Rev. D, 02-Aug-10 DG636 Vishay Siliconix TEST CIRCUITS V+ t r < 5 ns t f < 5 ns VCC V+ 50 Ω A0 S1A or S2A A1 S2A or S2B VS1A or VS2A VA0,A1 50 % 0V VS2A or VS2B VS1A or VS2A V+ VO D1 or D2 ENABLE V- GND 300 Ω VO 50 % 90 % 35 pF t TRANS t TRANS V- Figure 1. Transition Time V+ A0 t r < 5 ns t f < 5 ns VCC V+ V+ S1A or S2A VENABLE 50 % 0V A1 S1B or S2B VS1A or VS2A 50 Ω GND VO D1 or D2 ENABLE V- 300 Ω 90 % 90 % VO 50 % 35 pF 0V t OFF t ON V- S1A or S2A ON Figure 2. Enable Switching Time V+ tr < 5 ns tf < 5 ns VCC V+ SxA - SxB A0 50 Ω V+ VA0,A1 50 % 0V A1 VSxA or VSxB + V GND VO D1 or D2 ENABLE V- 300 Ω 80 % VO 35 pF 0V V- tD Figure 3. Break-Before-Make Document Number: 69901 S10-1815-Rev. D, 02-Aug-10 www.vishay.com 9 DG636 Vishay Siliconix TEST CIRCUITS V+ t r < 5 ns t f < 5 ns V+ VCC A0 Channel Select ON OFF VENABLE A1 OFF 0V Rg SxA or SxB VO Vg V GND ΔVO VO D1 or D2 ENABLE - CL 1 nF Charge Injection = ΔVO X CL V- Figure 4. Charge Injection V+ V+ Network Analyzer V+ Network Analyzer V+ VIN A0 A0 S1A or S2A A1 Vg Rg = 50 Ω VIN SxA or SxB A1 Vg VOUT V+ VOUT D1 or D2 ENABLE D1 or D2 ENABLE V- GND Rg = 50 Ω 50 Ω GND V- V- 50 Ω V- Insertion Loss = 20 log VOUT Off Isolation = 20 log VIN Figure 5. Insertion Loss VOUT VIN Figure 6. Off-Isolation V+ V+ Network Analyzer V+ S1A or S2A A0 VIN A1 Vg Rg = 50 V+ Channel Select A0 S1A or S2A | to | S2A or S2B A1 D1 or D2 VOUT 50 Ω V+ ENABLE GND Impedance Analyzer S1B or S2B V- 50 Ω V+ D1 or D2 ENABLE GND V- V- Cross Talk = 20 log VOUT VIN Figure 7. Crosstalk V- Figure 8. Source/Drain Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69901. www.vishay.com 10 Document Number: 69901 S10-1815-Rev. D, 02-Aug-10 Package Information Vishay Siliconix 14L TSSOP 3 D e CL 14 Notes: 1. All dimensions are in millimeters (angles in degrees) 2. Dimensioning and tolerancing per ANSI Y14.5M-1982 3 Dimension ‘D’ does not include mold flash, protrusions or gate burrs 4 Dimension ‘E1’ does not include internal flash or protrusion 5 Dimension ‘b’ does not include dambar protrusion 6 Cross section B to B to be determined at 0.10 mm to 0.25 mm from the lead tip 4 CL E1 Pin 1 ID mark 1 2 E 3 A A2 Detail ‘A’ B 6 Seating Plane B A1 b R 5 b Gauge Plane c1 0.25 R1 c Seating Plane θ1 b1 L Detail ‘B to B’ Detail ‘A’ L1 SYMBOL MINIMUM NOMINAL MAXIMUM 1.20 A - - A1 0.05 - 0.15 A2 0.80 0.90 1.05 D 4.9 5.0 5.1 E1 4.3 4.4 4.5 E 6.2 6.4 6.6 0.75 L 0.45 0.60 R 0.09 - - R1 0.09 - - b 0.19 - 0.30 b1 0.19 0.22 0.25 c 0.09 - 0.20 c1 0.09 - 0.16 θ1 0° - 8° L1 1.0 ref. e 0.65 BSC ECN: T-07766-Rev. A, 14-Jan-08 DWG: 5962 Document Number: 69938 Revision: 14-Jan-08 www.vishay.com 1 Package Information Vishay Siliconix MINI QFN-16L (1) (2) (3) (4) L1 (5) (16) L D (12) (11) (10) (9) (8) (7) (15) (6) (16) (5) (15) (6) (14) (7) (13) (8) E (13) (14) (12) (11) (10) (9) (2) (1) (3) (4) e DIM C b A A1 BACK SIDE VIEW MILLIMETERS MIN. NAM INCHES MAX. MIN. NAM MAX. A 0.70 0.75 0.80 0.0275 0.0295 0.0315 A1 0 - 0.05 0 - 0.002 b 0.15 0.20 0.25 0.0059 0.0078 0.0098 C 0.15 0.20 0.25 0.0059 0.0078 0.0098 D 2.60 BSC 0.1023 BSC E 1.80 BSC 0.0708 BSC e 0.40 BSC 0.0157 BSC L 0.35 0.40 0.45 0.0137 0.0157 0.0177 L1 0.45 0.50 0.55 0.0177 0.0196 0.0216 ECN T-06380-Rev. A, 14-Aug-06 DWG: 5954 Document Number: 74323 14-Aug-06 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1