VISHAY DG636EN-T1-E4

DG636
Vishay Siliconix
0.5 pC Charge Injection, 100 pA Leakage,
Dual SPDT Analog Switch
DESCRIPTION
FEATURES
The DG636 is an analog CMOS, dual SPDT switch,
designed to operate from a + 2.7 V to + 12 V single supply or
from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully
specified at + 3 V, + 5 V and ± 5 V. All control logic inputs have
guaranteed 2 V logic high limits when operating from + 5 V or
± 5 V supplies and 1.4 V when operating from a 3 V supply.
The DG636 switches conduct equally well in both directions
and offer rail to rail analog signal handling. < 1 pC low charge
injection, coupled with very low switch capacitance and
leakage current makes this product ideal for use in precision
instrumentation applications. Operating temperature range
is specified from - 40 °C to + 125 °C. The DG636 is available
in 14 lead TSSOP and the space saving 1.8 mm x 2.6 mm
miniQFN package.
• Ultra low charge injection (± 0.5 pC, typ. over
the full analog signal range)
• Leakage current < 0.5 nA max. at 85 °C RoHS
(for DG636EQ-T1-E3)
COMPLIANT
• Low switch capacitance (Csoff, 2 pF typ.)
• Low RDS(on) - 115  max.
• Fully specified with single supply operation at 3.0 V, 5.0
V and dual supplies at ± 5.0 V
• Low voltage, 2.5 V CMOS/TTL compatible
• 600 MHz, - 3 dB bandwidth
• Excellent isolation and crosstalk performance (typ. > - 60
dB at 10 MHz)
• Fully specified from - 40 °C to 85 °C and - 40 °C to
+ 125 °C
• 14 pin TSSOP and 16 pin miniQFN package (1.8 mm x
2.6 mm)
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
•
•
•
•
•
•
High-end data acquisition
Medical instruments
Precision instruments
High speed communications applications
Automated test equipment
Sample and hold applications
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG636
mQFN-16
Rxx
Pin 1
Device Marking: Rxx for DG636
(miniQFN16)
xx = Date/Lot Traceability Code
ENABLE
1
V-
DG636
TSSOP14
A0
NC
NC
A1
16
15
14
13
14
A1
13
GND
3
12
V+
A0
1
ENABLE
2
V-
12
GND
2
11
V+
S1A
3
10
S2A
S1A
4
11
S2A
S1B
4
9
S2B
S1B
5
11
S2B
8
D1
6
9
D2
D2
NC
7
8
NC
Logic
5
D1
6
77
NC
NC
Top View
Logic
Top View
ENABLE = Hi, all switches are controlled by
addr pins. ENABLE = Lo, all switches are off.
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
www.vishay.com
1
DG636
Vishay Siliconix
TRUTH TABLE
Selected Input
On Switches
Enable
Input
A1
A0
DG636
L
X
X
All Switches Open
H
L
L
D1 to S1A, D2 to S2A
H
L
H
D1 to S1B, D2 to S2A
H
H
L
D1 to S1A, D2 to S2B
H
H
H
D1 to S1B, D2 to S2B
Package
14 pin TSSOP
Part Number
DG636EQ-T1-E3
16 pin miniQFN
DG636EN-T1-E4
ORDERING INFORMATION
Temp. Range
- 40 °C to 125 °Ca
Notes:
a. - 40 °C to 85 °C datasheet limits apply.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Limit
V+ to V-
Unit
14
GND to V-
7
V
(V-) - 0.3 to (V+) + 0.3
or 30 mA, whichever occurs first
a
Digital Inputs , VS, VD
Continuous Current (Any Terminal)
30
Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)
100
Storage Temperature
mA
- 65 to 150
Power Dissipation (Package)b
Thermal Resistance (Package)b
14 pin TSSOPc
450
16 pin miniQFNd, e
525
14 pin TSSOP
178
16 pin miniQFN
152
°C
mW
°C/W
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 5.6 mW/°C above 70 °C.
d. Derate 6.6 mW/°C above 70 °C.
e. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal
is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection.
SPECIFICATIONS FOR DUAL SUPPLIES
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = - 5 V
VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b
- 40 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
5
-5
Max.d
Unit
5
V
Analog Switch
Analog Signal Rangee
On-Resistance
On-Resistance Match
On-Resistance Flatness
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2
VANALOG
Full
RDS(on)
IS = 1 mA, VD = - 3 V, 0 V, + 3 V
Room
Full
70
115
160
115
140
RON
IS = 1 mA, VD = ± 3 V
Room
Full
1
5
6.5
5
6.5
RFLATNESS
IS = 1 mA, VD = - 3 V, 0 V, + 3 V
Room
Full
10
20
33
20
22
-5

Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
DG636
Vishay Siliconix
SPECIFICATIONS FOR DUAL SUPPLIES
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = - 5 V
VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b
- 40 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
5
-5
Max.d
Unit
5
V
Analog Switch
Analog Signal Rangee
VANALOG
Full
RDS(on)
IS = 1 mA, VD = - 3 V, 0 V, + 3 V
Room
Full
70
115
160
115
140
RON
IS = 1 mA, VD = ± 3 V
Room
Full
1
5
6.5
5
6.5
RFLATNESS
IS = 1 mA, VD = - 3 V, 0 V, + 3 V
Room
Full
10
20
33
20
22
Room
Full
± 0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
Room
Full
± 0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
Room
Full
± 0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
Room
Full
± 0.01
-1
- 18
1
18
-1
-2
1
2
Room
Full
± 0.01
-1
- 18
1
18
-1
-2
1
2
On-Resistance Flatness
Switch Off
Leakage Current
(for 14 pin TSSOP)
Channel On
Leakage Current
(for 14 pin TSSOP)
Switch Off
Leakage Current
(for 16 pin miniQFN)
Channel On
Leakage Current
(for 16 pin miniQFN)
IS(off)
ID(off)
ID(on)
IS(off)
ID(off)
V+ = 5.5 V, V- = - 5.5 V
VD = ± 4.5 V, VS = 4.5 V
V+ = 5.5 V, V- = - 5.5 V,
VS = VD = ± 4.5 V
V+ = 5.5 V, V- = - 5.5 V
VD = ± 4.5 V, VS = 4.5 V
±
On-Resistance Match
±
On-Resistance
-5
ID(on)
V+ = 5.5 V, V- = - 5.5 V,
VS = VD = ± 4.5 V
Room
Full
± 0.01
-1
- 18
1
18
-1
-2
1
2
Input Current, VIN Low
IIL
VIN A0, A1 and ENABLE
Under Test = 0.8 V
Full
0.005
- 0.1
0.1
- 0.1
0.1
Input Current, VIN High
IIH
VIN A0, A1 and ENABLE
Under Test = 2.0 V
Full
0.005
- 0.1
0.1
- 0.1
0.1
Input Capacitancee
CIN
f = 1 MHz
Room
3.4
tTRANS
VS(CLOSE) = 3 V, VS(OPEN) = 0.0 V,
RL = 300 , CL = 35 pF
Room
Full
20
70
105
70
80
Room
Full
16
60
90
60
65
Room
Full
15
52
76
52
56
15

nA
Digital Control
µA
pF
Dynamic Characteristics
Transition Time
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make
Time Delay
Charge
Injectione
Off Isolatione
RL = 300 , CL = 35 pF
VS = ± 3 V
tD
VS = 3 V
RL = 300 , CL = 35 pF
Room
Full
Q
Vg = 0 V, Rg = 0 , CL = 1 nF
Room
0.1
pC
OIRR
RL = 50 , CL = 5 pF, f = 10 MHz
Room
- 58
dB
Room
610
MHz
Room
- 88
dB
5
BW
RL = 50 
Channel-to-Channel
Crosstalke
XTALK
RL = 50 , CL = 5 pF, f = 10 MHz
Source Off Capacitancee
CS(off)
Room
2.1
Drain Off Capacitancee
CD(off)
Room
4.2
Channel On
Capacitancee
CD(on)
Room
11.3
Room
0.01
Bandwidthe
Total Harmonic
Distortione
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
ns
THD
f = 1 MHz
Signal = 1 VRMS, 20 Hz to 20 kHz,
RL = 600 
5
pF
%
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DG636
Vishay Siliconix
SPECIFICATIONS FOR DUAL SUPPLIES
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = - 5 V
VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b
- 40 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
Power Supplies
Power Supply Current
I+
Negative Supply Current
I-
Ground Current
VIN = 0 V, or V+
IGND
Room
Full
0.001
0.5
1
0.5
1
Room
Full
- 0.001
- 0.5
-1
- 0.5
-1
Room
Full
- 0.001
- 0.5
-1
- 0.5
-1
µA
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = 0 V
VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b
- 40 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
5
5
V
Analog Switch
Analog Signal Rangee
VANALOG
Full
RDS(on)
IS = 1 mA, VD = + 3.5 V
Room
Full
120
170
250
170
200
On-Resistance Match
RON
IS = 1 mA, VD = + 3.5 V
Room
Full
3
5
12
5
10
Switch Off
Leakage Current
(for 14 pin TSSOP)
IS(off)
Room
Full
± 0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
Room
Full
± 0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
Room
Full
± 0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
Room
Full
± 0.01
-1
- 18
1
18
-1
-2
1
2
Room
Full
± 0.01
-1
- 18
1
18
-1
-2
1
2
On-Resistance
Channel On
Leakage Current
(for 14 pin TSSOP)
Switch Off
Leakage Current
(for 16 pin miniQFN)
Channel On
Leakage Current
(for 16 pin miniQFN)
ID(off)
ID(on)
IS(off)
ID(off)
V+ = 5.5 V, V- = 0 V
VD = 1 V/4.5 V, VS = 4.5 V/1 V
V+ = 5.5 V, V- = 0 V
VS = VD = 1 V/4.5 V
V+ = 5.5 V, V- = 0 V
VD = 1 V/4.5 V, VS = 4.5 V/1 V
ID(on)
V+ = 5.5 V, V- = 0 V,
VS = VD = 1 V/4.5 V
Room
Full
± 0.01
-1
- 18
1
18
-1
-2
1
2
Input Current, VIN Low
IL
VIN A0, A1 and ENABLE
Under Test = 0.8 V
Full
0.005
- 0.1
0.1
- 0.1
0.1
Input Current, VIN High
IH
VIN A0, A1 and ENABLE
Under Test = 2.0 V
Full
0.005
- 0.1
0.1
- 0.1
0.1
CIN
f = 1 MHz
Room
4.3
Room
Full
36
75
120
75
95
Room
Full
30
70
102
70
80
47
88
47
63

nA
Digital Control
Input Capacitance
µA
pF
Dynamic Characteristics
Transition Time
tTRANS
Enable Turn-On Time
tON(EN)
Enable Turn-Off Time
tOFF(EN)
Room
Full
17
tBMM
Room
Full
23
CL = 1 nF, RGEN = 0 , VGEN = 0 V
Full
0.1
f = 10 MHz, RL = 50 , CL = 5 pF
Room
- 58
Room
- 81
Room
520
Break-Before-Make-Time
Charge Injection
Q
Off-Isolatione
OIRR
Crosstalke
XTALK
Bandwidthe
BW
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VS(CLOSE) = 3 V, VS(OPEN) = 0.0 V,
RL = 300 , CL = 35 pF
RL = 50 
5
ns
5
pC
dB
MHz
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
DG636
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, V- = 0 V
VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b
- 40 °C to 125 °C - 40 °C to 85 °C
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
Dynamic Characteristics
Total Harmonic Distortion
THD
Source Off Capacitancee
CS(off)
Drain Off Capacitancee
CD(off)
Channel On
Capacitancee
CD(on)
Signal = 1 VRMS, 20 Hz to 20 kHz,
RL = 600 
Room
0.009
%
2.5
f = 1 MHz
Room
6.4
pF
11.3
Power Supplies
Power Supply Current
I+
Negative Supply Current
I-
Ground Current
VIN = 0 V, or V+
IGND
Room
Full
0.001
0.5
1
0.5
1
Room
Full
- 0.001
- 0.5
-1
- 0.5
-1
Room
Full
- 0.001
- 0.5
-1
- 0.5
-1
µA
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, V- = 0 V
VIN A0, A1 and ENABLE = 1.4 V, 0.6 Va Temp.b
- 40 °C to + 125 °C - 40 °C to + 85 °C
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
V
Analog Switch
Analog Signal Rangee
VANALOG
Full
3
3
RDS(ON)
IS = 1 mA, VD = + 1.5 V
Room
Full
200
245
325
245
290
On-Resistance Match
RON
IS = 1 mA, VD = + 1.5 V
Room
Full
5
6
13
11
6
Switch Off Leakage
Current
(for 14 pin TSSOP)
IS(off)
Room
Full
± 0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
Room
Full
± 0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
Room
Full
± 0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
Room
Full
± 0.01
-1
- 18
1
18
-1
-2
1
2
Room
Full
± 0.01
-1
- 18
1
18
-1
-2
1
2
On-Resistance
Channel On Leakage
Current
(for 14 pin TSSOP)
Switch Off
Leakage Current
(for 16 pin miniQFN)
Channel On
Leakage Current
(for 16 pin miniQFN)
ID(off)
ID(on)
IS(off)
ID(off)
V+ = 3 V, V- = 0 V
VD = 1 V/3 V, VS = 3 V/1 V
V+ = 3 V, V- = 0 V
VS = VD = 1 V/3 V
V+ = 3.3 V, V- = 0 V
VD = 1 V/3 V, VS = 3 V/1 V
ID(on)
V+ = 3.3 V, V- = 0 V,
VS = VD = 1 V/3 V
Room
Full
± 0.01
-1
- 18
1
18
-1
-2
1
2
Input Current, VIN Low
IL
VIN A0, A1 and ENABLE
Under Test = 0.6 V
Full
0.005
-1
1
-1
1
Input Current, VIN High
IH
VIN A0, A1 and ENABLE
Under Test = 1.4 V
Full
0.005
-1
1
-1
1
CIN
f = 1 MHz
Room
4.3

nA
Digital Control
Input Capacitance
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
µA
pF
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DG636
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, V- = 0 V
VIN A0, A1 and ENABLE = 1.4 V, 0.6 Va Temp.b
- 40 °C to + 125 °C - 40 °C to + 85 °C
Typ.c
Min.d
Max.d
Min.d
Max.d
Unit
Dynamic Characteristics
Room
Full
95
130
190
130
160
Room
Full
77
108
161
108
131
tOFF(EN)
Room
Full
35
76
112
76
88
tBMM
Room
Full
45
Full
0.24
Transition Time
tTRANS
Enable Turn-On Time
tON(EN)
Enable Turn-Off Time
Break-Before-MakeTime
Charge Injection
e
Q
CL = 1 nF, RGEN = 0 , VGEN = 0 V
f = 10 MHz, RL = 50 , CL = 5 pF
Off-Isolation
OIRR
Crosstalke
XTALK
Bandwidthe
BW
THD
Total Harmonic Distortion
VS(CLOSE) = 3.0 V, VS(OPEN) = 0.0 V,
RL = 300 , CL = 35 pF
5
ns
5
pC
Room
- 57
Room
- 93
RL = 50 
Room
442
MHz
Signal = 1 VRMS, 20 Hz to 20 kHz,
RL = 600 
Room
0.09
%
Room
Source Off Capacitancee
CS(off)
2.5
Drain Off Capacitancee
CD(off)
6.4
Channel On
Capacitancee
CD(on)
f = 1 MHz
dB
pF
11.7
Power Supplies
Power Supply Current
I+
Negative Supply Current
I-
Ground Current
IGND
VIN = 0 V, or V+
Room
Full
0.001
0.5
1
0.5
1
Room
Full
- 0.001
- 0.5
-1
- 0.5
-1
Room
Full
- 0.001
- 0.5
-1
- 0.5
-1
µA
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
DG636
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
350
160
T = 25 °C
IS = 1 mA
VCC = 2.7 V
300
RON - On-Resistance ()
VCC = 3.0 V
RON - On-Resistance ()
V+ = + 2.7 V
V- = - 2.7 V
140
250
200
VCC = 5.0 V
150
VCC = 13.2 V
100
50
V+ = + 5.0 V
V- = - 5.0 V
100
80
60
40
T = 25 °C
IS = 1 mA
20
0
-8
0
0
2
4
6
8
10
12
14
-6
-4
-2
0
2
4
6
8
VD - Analog Voltage (V)
VD - Analog Voltage (V)
On-Resistance vs. VD (Single Supply Voltage)
On-Resistance vs. VD (Dual Supply Voltage)
500
400
V+ = 3.0 V, V- = 0 V
IS = 1 mA
400
+ 125 °C
V+ = 5.0 V, V- = 0 V
IS = 1 mA
350
+ 25 °C
- 40 °C
RON - On-Resistance ()
450
RON - On-Resistance ()
V+ = + 6.2 V
V- = - 6.2 V
120
350
+ 85 °C
300
250
200
150
300
250
+ 125 °C
+ 85 °C
200
+ 25 °C
- 40 °C
150
100
100
50
50
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
VD - Analog Voltage (V)
On-Resistance vs. Analog Voltage and Temperature
2.5
3
3.5
4
4.5
5
On-Resistance vs. Analog Voltage and Temperature
10 mA
250
V+ = 5.0 V, V- = - 5.0 V
IS = 1 mA
225
1 mA
200
V+ = + 5.0 V
V- = - 5.0 V
100 µA
175
Supply Current (A)
RON - On-Resistance ()
2
VD - Analog Voltage (V)
+ 125 °C
150
+ 85 °C
125
+ 25 °C
- 40 °C
100
75
10 µA
I+
1 µA
I100 nA
1 nA
50
100 pA
25
10 pA
0
-5
IGND
1 pA
-4
-3
-2
-1
0
1
2
3
4
5
VD - Analog Voltage (V)
On-Resistance vs. Analog Voltage and Temperature
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
10
100
1K
10K
100K
1M
10M
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
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7
DG636
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 000
100 000
V+ = 13.2 V
V- = 0 V
V+ = + 5.0 V
V- = - 5.0 V
ID(off)
10 000
Leakage Current (pA)
Leakage Current (pA)
1000
1000
ID(off)
100
ID(on)
1
- 60 - 40 - 20
0
20
40
60
80
ID(on)
10
IS(off)
10
IS(off)
100
1
- 60 - 40 - 20
100 120 140
0
Leakage Current vs. Temperature
0
1.0
80
100 120 140
V+ = + 3.0 V
V- = 0 V
0.8
Q - Charge Injection (pC)
LOSS, OIRR, XTALK (dB)
60
1.2
LOSS
- 10
- 20
V+ = ± 5.0 V
RL = 50 
- 40
- 50
OIRR
- 60
XTALK
- 70
- 80
0.6
V+ = + 5.0 V
V- = - 5.0 V
0.4
0.2
V+ = + 13.2 V
V- = 0 V
0
- 0.2
V+ = + 12 V
V- = 0 V
- 0.4
- 0.6
V+ = + 5.0 V
V- = 0 V
- 0.8
- 90
-1
- 100
100K
1M
10M
100M
- 1.2
- 6 - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VS - Analog Voltage (V)
1G
Frequency (Hz)
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
Charge Injection vs. Analog Voltage
3.0
100
RL = 600 
VSignal = 1 VRMS
2.5
VT - Switching Threshold (V)
10
THD (%)
40
Leakage Current vs. Temperature
10
- 30
20
Temperature (°C)
Temperature (°C)
1
V+ = 3.0 V
V+ = 5.0 V
V± = ± 5.0 V
0.1
0.01
2.0
1.5
1.0
0.5
0.001
10
0.0
100
1000
10 000
Frequency (Hz)
Total Harmonic Distortion vs. Frequency
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100 000
0
2
4
6
8
10
12
14
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
DG636
Vishay Siliconix
TEST CIRCUITS
V+
t r < 5 ns
t f < 5 ns
VCC
V+
50 Ω
A0
S1A or S2A
A1
S2A or S2B
VS1A or VS2A
VA0,A1
50 %
0V
VS2A or VS2B
VS1A or VS2A
V+
VO
D1 or D2
ENABLE
V-
GND
300 Ω
VO
50 %
90 %
35 pF
t TRANS
t TRANS
V-
Figure 1. Transition Time
V+
A0
t r < 5 ns
t f < 5 ns
VCC
V+
V+
S1A or S2A
VENABLE
50 %
0V
A1
S1B or S2B
VS1A or VS2A
50 Ω
GND
VO
D1 or D2
ENABLE
V-
300 Ω
90 %
90 %
VO
50 %
35 pF
0V
t OFF
t ON
V-
S1A or S2A ON
Figure 2. Enable Switching Time
V+
tr < 5 ns
tf < 5 ns
VCC
V+
SxA - SxB
A0
50 Ω
V+
VA0,A1
50 %
0V
A1
VSxA or VSxB
+
V
GND
VO
D1 or D2
ENABLE
V-
300 Ω
80 %
VO
35 pF
0V
V-
tD
Figure 3. Break-Before-Make
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
www.vishay.com
9
DG636
Vishay Siliconix
TEST CIRCUITS
V+
t r < 5 ns
t f < 5 ns
V+
VCC
A0
Channel
Select
ON
OFF
VENABLE
A1
OFF
0V
Rg
SxA or SxB
VO
Vg
V
GND
ΔVO
VO
D1 or D2
ENABLE
-
CL
1 nF
Charge Injection = ΔVO X CL
V-
Figure 4. Charge Injection
V+
V+
Network Analyzer
V+
Network Analyzer
V+
VIN
A0
A0
S1A or S2A
A1
Vg
Rg = 50 Ω
VIN
SxA or SxB
A1
Vg
VOUT
V+
VOUT
D1 or D2
ENABLE
D1 or D2
ENABLE
V-
GND
Rg = 50 Ω
50 Ω
GND
V-
V-
50 Ω
V-
Insertion Loss = 20 log
VOUT
Off Isolation = 20 log
VIN
Figure 5. Insertion Loss
VOUT
VIN
Figure 6. Off-Isolation
V+
V+
Network Analyzer
V+
S1A or S2A
A0
VIN
A1
Vg
Rg = 50
V+
Channel
Select
A0
S1A or S2A
|
to
|
S2A or S2B
A1
D1 or D2
VOUT
50 Ω
V+
ENABLE
GND
Impedance
Analyzer
S1B or S2B
V-
50 Ω
V+
D1 or D2
ENABLE
GND
V-
V-
Cross Talk = 20 log
VOUT
VIN
Figure 7. Crosstalk
V-
Figure 8. Source/Drain Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69901.
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10
Document Number: 69901
S10-1815-Rev. D, 02-Aug-10
Package Information
Vishay Siliconix
14L TSSOP
3
D
e
CL
14
Notes:
1. All dimensions are in millimeters (angles in degrees)
2. Dimensioning and tolerancing per ANSI Y14.5M-1982
3 Dimension ‘D’ does not include mold flash, protrusions
or gate burrs
4 Dimension ‘E1’ does not include internal flash or protrusion
5 Dimension ‘b’ does not include dambar protrusion
6 Cross section B to B to be determined at 0.10 mm to 0.25 mm
from the lead tip
4
CL
E1
Pin 1
ID mark
1
2
E
3
A
A2
Detail ‘A’
B 6
Seating Plane
B
A1
b
R
5
b
Gauge Plane
c1
0.25
R1
c
Seating Plane
θ1
b1
L
Detail ‘B to B’
Detail ‘A’
L1
SYMBOL
MINIMUM
NOMINAL
MAXIMUM
1.20
A
-
-
A1
0.05
-
0.15
A2
0.80
0.90
1.05
D
4.9
5.0
5.1
E1
4.3
4.4
4.5
E
6.2
6.4
6.6
0.75
L
0.45
0.60
R
0.09
-
-
R1
0.09
-
-
b
0.19
-
0.30
b1
0.19
0.22
0.25
c
0.09
-
0.20
c1
0.09
-
0.16
θ1
0°
-
8°
L1
1.0 ref.
e
0.65 BSC
ECN: T-07766-Rev. A, 14-Jan-08
DWG: 5962
Document Number: 69938
Revision: 14-Jan-08
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1
Package Information
Vishay Siliconix
MINI QFN-16L
(1)
(2)
(3)
(4)
L1
(5)
(16)
L
D
(12) (11) (10) (9)
(8)
(7)
(15)
(6)
(16)
(5)
(15)
(6)
(14)
(7)
(13)
(8)
E
(13)
(14)
(12) (11) (10) (9)
(2)
(1)
(3)
(4)
e
DIM
C
b
A
A1
BACK SIDE VIEW
MILLIMETERS
MIN.
NAM
INCHES
MAX.
MIN.
NAM
MAX.
A
0.70
0.75
0.80
0.0275
0.0295
0.0315
A1
0
-
0.05
0
-
0.002
b
0.15
0.20
0.25
0.0059
0.0078
0.0098
C
0.15
0.20
0.25
0.0059
0.0078
0.0098
D
2.60 BSC
0.1023 BSC
E
1.80 BSC
0.0708 BSC
e
0.40 BSC
0.0157 BSC
L
0.35
0.40
0.45
0.0137
0.0157
0.0177
L1
0.45
0.50
0.55
0.0177
0.0196
0.0216
ECN T-06380-Rev. A, 14-Aug-06
DWG: 5954
Document Number: 74323
14-Aug-06
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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1