VISHAY SA2D

New Product
SA2B thru SA2M
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
•
•
•
•
•
•
•
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-214AC (SMA)
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
100 V to 1000 V
IFSM
55 A
IR
3.0 μA
VF at IF = 2.0 A
0.854 V
TJ max.
150 °C
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SA2B
SA2D
SA2G
SA2J
SA2K
SA2M
2B
2D
2G
2J
2K
2M
100
200
400
600
800
1000
UNIT
V
Maximum repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
2.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
55
A
TJ, TSTG
- 55 to + 150
°C
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 1.0 A
Instantaneous forward voltage
IF = 2.0 A
IF = 1.0 A
IF = 2.0 A
SYMBOL
TJ = 25 °C
VF (1)
TJ = 125 °C
TJ = 25 °C
IR (2)
TYP.
MAX.
0.911
-
0.954
1.1
0.805
-
0.854
0.95
0.19
3
28
90
UNIT
V
Reverse current
Rated VR
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
1.5
-
μs
Typical junction capacitance
4.0 V, 1 MHz
CJ
11
-
pF
TJ = 125 °C
μA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Document Number: 88969
Revision: 13-Oct-09
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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New Product
SA2B thru SA2M
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
SA2B
SA2D
SA2G
SA2J
RθJA (1)
80
(1)
12
RθJL
SA2K
SA2M
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.79" x 0.79" (20 mm x 20 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SA2J-E3/61T
0.064
61T
1800
7" diameter plastic tape and reel
SA2J-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
70
8.3 ms Single Half Sine-Wave
Resistive or Inductive Load
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
3.0
2.5
Lead Temperature
2.0
1.5
1.0
Ambient Temperature
0.5
P.C.B. Mounted on
0.79" x 0.79" (20 mm x 20 mm)
Copper Pad Areas
0
50
40
30
20
10
0
0
25
50
75
100
125
150
1
175
100
10
Lead Temperature (°C)
Number of Cycles at 50 Hz
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
10
D = 0.5
D = 0.8
D = 0.3
2.0
D = 0.2
D = 1.0
D = 0.1
1.5
1.0
T
0.5
D = tp/T
tp
0
0
0.5
1.0
1.5
2.0
2.5
Instantaneous Forward Current (A)
2.5
Average Power Loss (W)
60
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
0.1
0.5
0.7
0.9
1.1
1.3
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Instantaneous Forward Characteristics
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88969
Revision: 13-Oct-09
New Product
SA2B thru SA2M
Vishay General Semiconductor
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (μA)
1000
TJ = 150 °C
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
10
20
30
40
50
60
70
80
90
Junction to Ambient
10
1
0.01
100
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 5 - Typical Reverse Leakage Characteristics
Fig. 7 - Typical Transient Thermal Impedance
Junction Capacitance (pF)
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 88969
Revision: 13-Oct-09
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Document Number: 91000
Revision: 11-Mar-11
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