New Product SA2B thru SA2M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction Low forward voltage drop Low leakage current High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-214AC (SMA) TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 100 V to 1000 V IFSM 55 A IR 3.0 μA VF at IF = 2.0 A 0.854 V TJ max. 150 °C MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SA2B SA2D SA2G SA2J SA2K SA2M 2B 2D 2G 2J 2K 2M 100 200 400 600 800 1000 UNIT V Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 55 A TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.0 A Instantaneous forward voltage IF = 2.0 A IF = 1.0 A IF = 2.0 A SYMBOL TJ = 25 °C VF (1) TJ = 125 °C TJ = 25 °C IR (2) TYP. MAX. 0.911 - 0.954 1.1 0.805 - 0.854 0.95 0.19 3 28 90 UNIT V Reverse current Rated VR Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.5 - μs Typical junction capacitance 4.0 V, 1 MHz CJ 11 - pF TJ = 125 °C μA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Document Number: 88969 Revision: 13-Oct-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product SA2B thru SA2M Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance SA2B SA2D SA2G SA2J RθJA (1) 80 (1) 12 RθJL SA2K SA2M UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.79" x 0.79" (20 mm x 20 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SA2J-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel SA2J-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 70 8.3 ms Single Half Sine-Wave Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 2.5 Lead Temperature 2.0 1.5 1.0 Ambient Temperature 0.5 P.C.B. Mounted on 0.79" x 0.79" (20 mm x 20 mm) Copper Pad Areas 0 50 40 30 20 10 0 0 25 50 75 100 125 150 1 175 100 10 Lead Temperature (°C) Number of Cycles at 50 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current 10 D = 0.5 D = 0.8 D = 0.3 2.0 D = 0.2 D = 1.0 D = 0.1 1.5 1.0 T 0.5 D = tp/T tp 0 0 0.5 1.0 1.5 2.0 2.5 Instantaneous Forward Current (A) 2.5 Average Power Loss (W) 60 TJ = 150 °C TJ = 125 °C 1 TJ = 25 °C 0.1 0.5 0.7 0.9 1.1 1.3 Average Forward Current (A) Instantaneous Forward Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Instantaneous Forward Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88969 Revision: 13-Oct-09 New Product SA2B thru SA2M Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (μA) 1000 TJ = 150 °C 100 TJ = 125 °C 10 1 TJ = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 Junction to Ambient 10 1 0.01 100 0.1 1 10 100 1000 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 5 - Typical Reverse Leakage Characteristics Fig. 7 - Typical Transient Thermal Impedance Junction Capacitance (pF) 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 1 10 100 Reverse Voltage (V) Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 88969 Revision: 13-Oct-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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