VISHAY U2D-E3-5BT

New Product
U2B, U2C, U2D
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Oxide planar chip junction
• Ultrafast recovery time
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-214AA (SMB)
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, dc-to-dc converters
or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
100 V, 150 V, 200 V
IFSM
50 A
trr
20 ns
VF at IF = 2.0 A
0.76 V
TJ max.
150 °C
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
U2B
U2C
U2D
U2B
U2C
U2D
100
150
200
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
TJ, TSTG
- 55 to + 150
°C
Operating junction and storage temperature range
Document Number: 89096
Revision: 13-Oct-09
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
V
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New Product
U2B, U2C, U2D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Instantaneous forward voltage
IF = 2 A
Reverse current
Rated VR
TA = 25 °C
VF (1)
TA = 100 °C
TA = 25 °C
IR (2)
TA = 100 °C
IF = 0.5 A, IR = 1.0 A,
lrr = 0.25 A
Reverse recovery time
SYMBOL
TYP.
MAX.
0.86
0.90
0.76
0.83
-
10
180
350
-
20
27
-
35
-
TA = 25 °C
IF = 2.0 A, dI/dt = 50 A/μs,
VR = 30 V, lrr = 0.1 IRM
Storage charge
IF = 2.0 A, dI/dt = 50 A/μs,
VR = 30 V, lrr = 0.1 IRM
Typical junction capacitance
4.0 V, 1 MHz
trr
TA = 25 °C
TA = 100 °C
TA = 25 °C
Qrr
TA = 100 °C
CJ
UNIT
V
μA
ns
9
-
19
-
16
-
pF
U2D
UNIT
nC
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RθJA
Typical thermal resistance
U2B
U2C
(1)
105
RθJM (1)
°C/W
18
Note
Free air, mounted on recommended copper pad area. Thermal resistance RθJA - junction to ambient, RθJM - junction to mount
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
U2D-E3/52T
0.099
52T
750
7" diameter plastic tape and reel
U2D-E3/5BT
0.099
5BT
3200
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
2.0
D = 0.8
Resistive or Inductive Load
D = 0.3 D = 0.5
Average Power Loss (W)
Average Forward Rectified Current (A)
3.0
2.0
1.0
0
1.6
D = 0.2
D = 1.0
D = 0.1
1.2
0.8
T
0.4
D = tp/T
tp
1.6
2.0
0
80
90
100
110
120
130
140
150
0
0.4
0.8
1.2
2.4
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89096
Revision: 13-Oct-09
New Product
U2B, U2C, U2D
Vishay General Semiconductor
100
10
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 150 °C
1
TA = 100 °C
TA = 125 °C
0.1
TA = 25 °C
0.01
0.1
0.3
0.5
0.7
0.9
1.1
10
1
0.1
1.3
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000
Transient Thermal Impedance (°C/W)
10 000
Instantaneous Reverse Current (μA)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
1000
TA = 125 °C
TA = 100 °C
100
10
TA = 25 °C
1
0.1
10
20
30
40
50
60
70
80
90
Junction to Ambient
100
10
1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 89096
Revision: 13-Oct-09
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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