New Product U2B, U2C, U2D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Oxide planar chip junction • Ultrafast recovery time • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-214AA (SMB) TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 100 V, 150 V, 200 V IFSM 50 A trr 20 ns VF at IF = 2.0 A 0.76 V TJ max. 150 °C MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code U2B U2C U2D U2B U2C U2D 100 150 200 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG - 55 to + 150 °C Operating junction and storage temperature range Document Number: 89096 Revision: 13-Oct-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V www.vishay.com 1 New Product U2B, U2C, U2D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Instantaneous forward voltage IF = 2 A Reverse current Rated VR TA = 25 °C VF (1) TA = 100 °C TA = 25 °C IR (2) TA = 100 °C IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A Reverse recovery time SYMBOL TYP. MAX. 0.86 0.90 0.76 0.83 - 10 180 350 - 20 27 - 35 - TA = 25 °C IF = 2.0 A, dI/dt = 50 A/μs, VR = 30 V, lrr = 0.1 IRM Storage charge IF = 2.0 A, dI/dt = 50 A/μs, VR = 30 V, lrr = 0.1 IRM Typical junction capacitance 4.0 V, 1 MHz trr TA = 25 °C TA = 100 °C TA = 25 °C Qrr TA = 100 °C CJ UNIT V μA ns 9 - 19 - 16 - pF U2D UNIT nC Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RθJA Typical thermal resistance U2B U2C (1) 105 RθJM (1) °C/W 18 Note Free air, mounted on recommended copper pad area. Thermal resistance RθJA - junction to ambient, RθJM - junction to mount (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE U2D-E3/52T 0.099 52T 750 7" diameter plastic tape and reel U2D-E3/5BT 0.099 5BT 3200 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 2.0 D = 0.8 Resistive or Inductive Load D = 0.3 D = 0.5 Average Power Loss (W) Average Forward Rectified Current (A) 3.0 2.0 1.0 0 1.6 D = 0.2 D = 1.0 D = 0.1 1.2 0.8 T 0.4 D = tp/T tp 1.6 2.0 0 80 90 100 110 120 130 140 150 0 0.4 0.8 1.2 2.4 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89096 Revision: 13-Oct-09 New Product U2B, U2C, U2D Vishay General Semiconductor 100 10 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C 1 TA = 100 °C TA = 125 °C 0.1 TA = 25 °C 0.01 0.1 0.3 0.5 0.7 0.9 1.1 10 1 0.1 1.3 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 Transient Thermal Impedance (°C/W) 10 000 Instantaneous Reverse Current (μA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C 1000 TA = 125 °C TA = 100 °C 100 10 TA = 25 °C 1 0.1 10 20 30 40 50 60 70 80 90 Junction to Ambient 100 10 1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 89096 Revision: 13-Oct-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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