Not for new design, this product will be obsoleted soon BFR182T / BFR182TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 1 Low noise figure High power gain e3 Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. 2 Mechanical Data Typ: BFR182T Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking: RG Pinning: 1 = Collector, 2 = Base, 3 = Emitter 3 Electrostatic sensitive device. Observe precautions for handling. 13581 Typ: BFR182TW Case: SOT-323 Plastic case Weight: approx. 6.0 mg Marking: WRG Pinning: 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Unit Collector-base voltage Parameter VCBO 15 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 2 V Collector current IC 35 mA Base current IB 5 mA Ptot 200 mW Tj 150 °C Tstg - 65 to + 150 °C Symbol Value Unit RthJA 450 K/W Total power dissipation Test condition Tamb ≤ 60 °C Junction temperature Storage temperature range Maximum Thermal Resistance Parameter Junction ambient 1) Test condition 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Document Number 85025 Rev. 1.4, 08-Sep-08 www.vishay.com 1 BFR182T / BFR182TW Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Max Unit Collector-emitter cut-off current Parameter VCE = 15 V, VBE = 0 Test condition ICES 100 μA Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 1 μA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA DC forward current transfer ratio VCE = 6 V, IC = 5 mA VCE = 8 V, IC = 20 mA www.vishay.com 2 Symbol Min 10 VCEsat hFE hFE Typ. V 0.1 50 0.4 V 90 100 Document Number 85025 Rev. 1.4, 08-Sep-08 BFR182T / BFR182TW Vishay Semiconductors Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit VCE = 6 V, IC = 5 mA, f = 500 MHz fT 5.5 GHz VCE = 8 V, IC = 20 mA, f = 500 MHz fT 7.5 GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.3 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce 0.2 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.65 pF Noise figure VCE = 6 V, IC = 5 mA, ZS = ZSopt, f = 900 MHz F 1.5 dB VCE = 6 V, IC = 5 mA, ZS = ZSopt, f = 1.75 GHz F 2.0 dB VCE = 8 V, IC = 20 mA, ZS = 50 Ω, ZL = ZLopt, f = 900 MHz Gpe 15 dB VCE = 8 V, IC = 20 mA, ZS = 50 Ω, ZL = ZLopt, f = 1.75 GHz Gpe 11 dB VCE = 8 V, IC = 20 mA, f = 900 MHz, Z0 = 50 Ω |S21e|2 14 dB Transition frequency Power gain Transducer gain 0.175 (0.007) 0.098 (0.005) 0.1 (0.004) max. 2.6 (0.102) 2.35 (0.092) 0.4 (0.016) 0.4 (0.016) 0.95 (0.037) 1.15 (0.045) Package Dimensions in mm (Inches) ISO Method E 3.1 (0.122) Mounting Pad Layout 2.8 (0.110) 0.52 (0.020) 0.4 (0.016) C B 0.95 (0.037) 1.20 (0.047) 1.43 (0.056) 0.9 (0.035) 2.0 (0.079) E 0.95 (0.037) 0.95 (0.037) 0.95 (0.037) 9511346 Document Number 85025 Rev. 1.4, 08-Sep-08 www.vishay.com 3 BFR182T / BFR182TW Vishay Semiconductors Package Dimensions in mm (Inches) 96 12236 www.vishay.com 4 Document Number 85025 Rev. 1.4, 08-Sep-08 BFR182T / BFR182TW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85025 Rev. 1.4, 08-Sep-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1