VISHAY BFP193T

Not for new design, this product will be obsoleted soon
BFP193T / BFP193TW / BFP193TRW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
2
1
Features
•
•
•
•
•
Low noise figure
High transition frequency fT = 8 GHz
e3
Excellent large signal behaviour
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
SOT-143
3
4
2
1
SOT-343
Applications
For low noise and high gain applications such as
power amplifiers up to 2 GHz and for linear broadband amplifiers.
3
4
1
2
SOT-343R
4
Mechanical Data
3
18383
Electrostatic sensitive device.
Observe precautions for handling.
Typ: BFP193T
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Marking: 193
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Typ: BFP193TW
Case: SOT-343 Plastic case
Weight: approx. 6.0 mg
Marking: W19
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Typ: BFP193TRW
Case: SOT-343R Plastic case
Weight: approx. 6.0 mg
Marking: W91
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Collector-base voltage
Parameter
Test condition
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
2
V
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Document Number 85015
Rev. 1.3, 05-Sep-08
Tamb ≤ 45 °C
IC
80
mA
Ptot
420
mW
Tj
150
°C
Tstg
- 65 to + 150
°C
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BFP193T / BFP193TW / BFP193TRW
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Junction ambient
1)
Test condition
Symbol
Value
Unit
RthJA
250
K/W
1)
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Max
Unit
VCE = 20 V, VBE = 0
ICES
100
μA
Collector-base cut-off current
VCB = 10 V, IE = 0
ICBO
100
nA
Emitter-base cut-off current
VEB = 1 V, IC = 0
IEBO
1
μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
V(BR)CEO
Collector-emitter saturation
voltage
IC = 50 mA, IB = 5 mA
Collector-emitter cut-off current
Test condition
DC forward current transfer ratio VCE = 8 V, IC = 30 mA
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2
Symbol
Min
12
VCEsat
hFE
Typ.
50
V
0.1
0.5
100
150
V
Document Number 85015
Rev. 1.3, 05-Sep-08
BFP193T / BFP193TW / BFP193TRW
Vishay Semiconductors
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Transition frequency
Test condition
Symbol
Min
Typ.
VCE = 8 V, IC = 50 mA, f = 1 GHz
fT
6
8
Max
Unit
GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
0.5
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Cce
0.25
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
1.6
pF
Noise figure
VCE = 8 V, IC = 10 mA,
ZS = ZSopt, ZL = 50 Ω,
f = 900 MHz
F
1.2
dB
VCE = 8 V, IC = 10 mA,
ZS = ZSopt, ZL = 50 Ω,
f = 2 GHz
F
2.1
dB
VCE = 8 V, IC = 30 mA,
ZS = ZSopt, ZL = 50 Ω,
f = 900 MHz
Gpe
18
dB
VCE = 8 V, IC = 30 mA,
ZS = ZSopt, ZL = 50 Ω,
f = 2 GHz
Gpe
12
dB
VCE = 8 V, IC = 30 mA,
Z0 = 50 Ω, f = 900 MHz
|S21e|2
15
dB
VCE = 8 V, IC = 30 mA,
Z0 = 50 Ω, f = 2 GHz
|S21e|2
9
dB
VCE = 8 V, IC = 50 mA,
f = 900 MHz
IP3
33
dBm
Power gain
Transducer gain
Third order intercept point at
output
0.9
pF
pF
0.5 [0.020]
0.35 [0.014]
0.5 [0.020]
0.35 [0.014]
1.1 [0.043]
0.9 [0.035]
0.08 [0.003]
0.15 [0.006]
3 [0.118]
2.8 [0.110]
0.1 [0.004] max.
Package Dimensions in mm
2.6 [0.102]
2.35 [0.093]
1.8 [0.071]
1.6 [0.063]
0.5 [0.020]
0.35 [0.014]
0.9 [0.035]
0.75 [0.030]
foot print recommendation:
96 12240
Document Number 85015
Rev. 1.3, 05-Sep-08
1.2 [0.047]
0.8 [0.031]
0.8 [0.031]
2 [0.079]
2 [0.079]
1.8 [0.071]
0.9 [0.035] 0.9 [0.035]
1.4 [0.055]
1.2 [0.047]
1.7 [0.067]
0.8 [0.031]
1.9 [0.075]
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3
BFP193T / BFP193TW / BFP193TRW
Vishay Semiconductors
0.4 [0.016]
0.25 [0.010]
0.4 [0.016]
0.25 [0.010]
1 [0.039]
0.8 [0.031]
0.2 [0.008]
0.1 [0.004]
2.2 [0.087]
1.8 [0.071]
0.1 [0.004] max.
Package Dimensions in mm
0.15 [0.006] min.
2.2 [0.087]
2 [0.079]
1.25 [0.049]
1.05 [0.041]
0.4 [0.016]
0.25 [0.010]
0.7 [0.028]
0.55 [0.022]
foot print recommendation:
1.15 [0.045]
0.09 [0.035]
96 12237
0.8 [0.031]
1.4 [0.055]
1.2 [0.047]
1.6 [0.063]
1.35 [0.053]
1.15 [0.045]
0.6 [0.024]
1.3 [0.051]
Package Dimensions in mm
96 12238
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4
Document Number 85015
Rev. 1.3, 05-Sep-08
BFP193T / BFP193TW / BFP193TRW
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85015
Rev. 1.3, 05-Sep-08
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5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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