TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 SOT-143 Features • • • • • Low power applications Very low noise figure e3 High transition frequency fT = 12 GHz Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 4 1 2 SOT-143R 4 3 2 1 SOT-343 Applications 3 For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. 1 4 2 SOT-343R 4 3 Electrostatic sensitive device. Observe precautions for handling. Mechanical Data 13629 Typ:TSDF1205 Case: SOT-143 Plastic case Typ: TDSF1205W Case: SOT-343 Plastic case Weight: approx. 6.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Typ: TSDF1205RW Case: SOT-343R Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Typ: TSDF1205R Case: SOT-143R Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Parts Table Part TSDF1205 Marking Package F05 SOT-143 TSDF1205R 05F SOT-143R TSDF1205RW WF0 SOT-343R TSDF1205W W0F SOT-343 Document Number 85065 Rev. 1.5, 02-May-05 www.vishay.com 1 TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Unit Collector-base voltage Parameter Test condition VCBO 9 V Collector-emitter voltage VCEO 4 V Emitter-base voltage VEBO 2 V Collector current Total power dissipation IC 12 mA Ptot 40 mW Tj 150 °C Tstg - 65 to + 150 °C Symbol Value Unit RthJA 450 K/W Tamb ≤ 132 °C Junction temperature Storage temperature range Maximum Thermal Resistance Parameter Junction ambient 1) Test condition 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Max Unit VCE = 12 V, VBE = 0 ICES 100 μA Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 2 μA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA Collector-emitter cut-off current Test condition DC forward current transfer ratio VCE = 2 V, IC = 2 mA www.vishay.com 2 Symbol Min 4 VCEsat hFE Typ. 50 V 0.1 0.5 120 250 V Document Number 85065 Rev. 1.5, 02-May-05 TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Transition frequency Test condition Symbol VCE = 2 V, IC = 5 mA, f = 1 GHz fT Min Typ. Max Unit 12 GHz Collector-base capacitance VCB = 1 V, f = 1 MHz Ccb 0.2 pF Collector-emitter capacitance VCE = 1 V, f = 1 MHz Cce 0.35 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.15 pF Noise figure VCE = 2 V, IC = 2 mA, ZS = ZSopt, ZL = 50 Ω, f = 2 GHz F 1.3 dB Power gain VCE = 2 V, IC = 2 mA, f = 2 GHz (@Fopt) Gpe 13 dB VCE = 2 V, IC = 5 mA, ZS = ZSopt, ZL = 50 Ω f = 2 GHz Gpe 11.5 dB VCE = 2 V, IC = 5 mA, Z0 = 50 Ω, f = 2 GHz |S21e|2 12.5 dB Transducer gain Ccb - Collector Base Capacitance ( pF ) Typical Characteristics (Tamb = 25 °C unless otherwise specified) Ptot - Total Power Dissipation ( mW ) 100 80 60 40 20 0 0 20 40 60 80 0.2 0.1 0.0 0 1 2 3 4 5 V CB - Collector Base Voltage ( V ) Figure 3. Collector Base Capacitance vs. Collector Base Voltage 3.0 16 f =1 GHz 14 12 F - Noise Figure ( dB ) f T - Transition Frequency ( GHz ) 0.3 14286 Figure 1. Total Power Dissipation vs. Ambient Temperature V CE = 3 V 10 8 V CE = 2 V 6 4 V CE = 2 V f = 2 GHz ZS = 50 Ω 2.5 2.0 1.5 1.0 0.5 2 0 0.0 0 14285 0.4 100 120 140 160 Tamb - Ambient Temperature ( ° C ) 14284 0.5 2 4 6 8 10 12 14 I C - Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current Document Number 85065 Rev. 1.5, 02-May-05 0 14287 1 2 3 4 5 6 I C - Collector Current ( mA ) Figure 4. Noise Figure vs. Collector Current www.vishay.com 3 TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors Package Dimensions in mm 96 12239 Package Dimensions in mm 0.50(0.020) 0.35 (0.014) 0.15 (0.006) 0.08 (0.003) 1.1 (0.043) 0.9 (0.035) 1.4 (0.055) 1.2 (0.047) 2.6 (0.101) 2.4 (0.094) 0.9 (0.035) 0.75 (0.029) 3.0 (0.117) 2.8 (0.109) 0...0.1 (0...0.004) Mounting Pad Layout 1.8 (0.070) 1.6 (0.062) 0.65 (0.025) 1.17 (0.046) 2.0 (0.078) 1.8 (0.070) www.vishay.com 4 ISO Method E 96 12240 Document Number 85065 Rev. 1.5, 02-May-05 TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors Package Dimensions in mm 96 12237 Package Dimensions in mm 96 12238 Document Number 85065 Rev. 1.5, 02-May-05 www.vishay.com 5 TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 85065 Rev. 1.5, 02-May-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1