FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Features Description ■ Guaranteed operating temperature range of -40°C to The FOD3180 is a 2A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETs used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ +100°C 2A minimum peak output current High speed response: 200ns max propagation delay over temperature range 250kHz maximum switching speed 30ns typ pulse width distortion Wide VCC operating range: 10V to 20V 5000Vrms, 1 minute isolation Under voltage lockout protection (UVLO) with hysteresis Minimum creepage distance of 7.0mm Minimum clearance distance of 7.0mm C-UL, UL and VDE* approved RDS(ON) of 1.5Ω (typ.) offers lower power dissipation 15kV/µs minimum common mode rejection The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance. Applications ■ ■ ■ ■ ■ Plasma Display Panel High performance DC/DC convertor High performance switch mode power supply High performance uninterruptible power supply Isolated Power MOSFET gate drive *Requires ‘V’ ordering option Functional Block Diagram Package Outlines FOD3180 NO CONNECTION 1 8 VCC 8 ANODE 2 7 OUTPUT CATHODE 3 6 OUTPUT NO CONNECTION 4 5 VEE 1 8 8 1 Note: A 0.1µF bypass capacitor must be connected between pins 5 and 8. ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 1 www.fairchildsemi.com FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler August 2008 Symbol Parameter Value Units TSTG Storage Temperature -40 to +125 °C TOPR Operating Temperature -40 to +100 °C Junction Temperature -40 to +125 °C TJ 260 for 10 sec. °C IF(AVG) Average Input Current(1) 25 mA IF(tr, tf) LED Current Minimum Rate of Rise/Fall 250 ns IF(TRAN) Peak Transient Input Current (<1µs pulse width, 300pps) 1.0 A TSOL VR Lead Solder Temperature Reverse Input Voltage 5 V IOH(PEAK) “High” Peak Output Current(2) 2.5 A IOL(PEAK) “Low” Peak Output Current(2) 2.5 A VCC – VEE Supply Voltage -0.5 to 25 V VO(PEAK) Output Voltage 0 to VCC V 250 mW 295 mW Dissipation(4) PO Output Power PD Total Power Dissipation(5) Recommended Operating Conditions The Recommended Operating Conditions table deﬁnes the conditions for actual device operation. Recommended operating conditions are speciﬁed to ensure optimal performance to the datasheet speciﬁcations. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Value Units Power Supply 10 to 20 V IF(ON) Input Current (ON) 10 to 16 mA VF(OFF) Input Voltage (OFF) -3.0 to 0.8 V VCC – VEE Parameter ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 2 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Over recommended operating conditions unless otherwise specified. Symbol Parameter IOH High Level Output Current(2)(3) IOL Current(2)(3) Low Level Output Output Voltage(6)(7) Test Conditions Min. VOH = (VCC – VEE – 1V) 0.5 VOH = (VCC – VEE – 3V) 2.0 VOL = (VCC – VEE – 1V) 0.5 VOL = (VCC – VEE – 3V) 2.0 Max. Unit A A VOH High Level VOL Low Level Output Voltage(6)(7) IO = 100mA ICCH High Level Supply Current Output Open, IF = 10 to 16mA ICCL Low Level Supply Current Output Open, VF = -3.0 to 0.8V IFLH Threshold Input Current Low to High IO = 0mA, VO > 5V VFHL Threshold Input Voltage High to Low IO = 0mA, VO < 5V 0.8 Input Forward Voltage IF = 10mA 1.2 ∆VF / TA Temperature Coefficient of Forward Voltage IF = 10mA -1.5 mV/°C VUVLO+ UVLO Threshold VO > 5V, IF = 10mA 8.3 V VO < 5V, IF = 10mA 7.7 V 0.6 V VF VUVLO– IO = -100mA Typ.* VCC – 0.5 UVLOHYST UVLO Hysteresis BVR Input Reverse Breakdown Voltage IR = 10µA CIN Input Capacitance f = 1MHz, VF = 0V V VEE + 0.5 V 4.8 6.0 mA 5.0 6.0 mA 8.0 mA V 1.43 5 1.8 V V 60 pF *Typical values at TA = 25°C ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 3 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Electrical-Optical Characteristics (DC) Over recommended operating conditions unless otherwise specified. Symbol Parameter Test Conditions Min. tPLH Propagation Delay Time to High Output Level(8) tPHL Propagation Delay Time to Low Output Level(8) IF = 10mA, Rg = 10Ω, f = 250kHz, Duty Cycle = 50%, Cg = 10nF PWD Pulse Width Distortion(9) Propagation Delay Difference Between Any PDD (tPHL – tPLH) Two Parts(10) tr Rise Time tf Fall Time tUVLO ON UVLO Turn On Delay tUVLO OFF UVLO Turn Off Delay Typ.* Max. Unit 50 135 200 ns 50 105 200 ns 65 ns 90 ns -90 CL = 10nF, Rg = 10Ω 75 ns 55 ns 2.0 µs 0.3 µs | CMH | Output High Level Common Mode Transient Immunity(11) (12) TA = +25°C, If = 10 to 16mA, VCM = 1.5kV, VCC = 20V 15 kV/µs | CML | Output Low Level Common Mode Transient Immunity(11) (13) TA = +25°C, Vf = 0V, VCM = 1.5kV, VCC = 20V 15 kV/µs *Typical values at TA = 25°C Isolation Characteristics Symbol Parameter Test Conditions VISO Withstand Isolation Voltage(14) (15) TA = 25°C, R.H. < 50%, t = 1min., II-O ≤ 20µA RI-O Resistance (input to output)(15) VI-O = 500V CI-O Capacitance (input to output) Freq. = 1MHz Min. Typ.* 5000 Max. Unit Vrms 1011 Ω 1 pF *Typical values at TA = 25°C ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 4 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Switching Characteristics 7. 8. Maximum pulse width = 1ms, maximum duty cycle = 20%. tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the VO signal. 9. PWD is defined as | tPHL – tPLH | for any given device. 10. The difference between tPHL and tPLH between any two FOD3180 parts under same test conditions. 11. Pin 1 and 4 need to be connected to LED common. 12. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse VCM to assure that the output will remain in the high state (i.e. VO > 10.0V). 13. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V). 14. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms, 60Hz for 1 second (leakage detection current limit II-O < 5µA). 15. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together. ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 5 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Notes: 1. Derate linearly above +70°C free air temperature at a rate of 0.3mA/°C. 2. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 0.5Ω, frequency = 8kHz, 50% DF. 3. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 8.5Ω, frequency = 8kHz, 50% DF. 4. Derate linearly above +87°C, free air temperature at the rate of 0.77mW/°C. Refer to Figure 12. 5. No derating required across operating temperature range. 6. In this test, VOH is measured with a dc load current of 100mA. When driving capacitive load VOH will approach VCC as IOH approaches zero amps. Fig. 2 Low To High Input Current Threshold vs. Ambient Temperature Fig. 1 Input Forward Current vs. Forward Voltage 6 IFLH – LOW TO HIGH INPUT CURRENT THRESHOLD (mA) I F – FORWARD CURRENT (mA) 100 10 TA = -40°C TA = 100°C 1 TA = 25°C 0.1 0.01 V = 10 to 20V CC VEE = 0 Output = Open 5 4 3 2 1 0 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -40 2.2 -20 Fig. 3 Output Low Voltage vs. Ambient Temperature (VOH - VCC) – HIGH OUTPUT VOLTAGE DROP (V) V OL – OUTPUT LOW VOLTAGE (V) VF(OFF) = -3.0V to 0.8V IOUT = 100mA V = 10V to 20V CC VEE = 0 0.20 0.15 0.10 0.05 0.00 -40 -20 0 20 40 60 40 60 80 100 80 0.00 V CC = 10 to 20V, VEE = 0 IF = 10mA to 16mA IOUT = -100 mA -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 100 -40 -20 TA – AMBIENT TEMPERATURE (°C) 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) Fig. 5 Supply Current vs. Ambient Temperature Fig. 6 Supply Current vs. Supply Voltage 6.2 6.2 V CC = 20V, VEE = 0 IF = 10mA (for ICCH) IF = 0mA (for ICCL) IF = 10mA (for ICCH) IF = 0mA (for ICCL) 5.8 I CC – SUPPLY CURRENT (mA) 5.8 I CC – SUPPLY CURRENT (mA) 20 Fig. 4 High Output Voltage Drop vs. Ambient Temperature 0.30 0.25 0 TA – AMBIENT TEMPERATURE (°C) VF – FORWARD VOLTAGE (V) 5.4 ICCL 5.0 ICCH 4.6 4.2 3.8 TA = 25oC, VEE = 0V 5.4 5.0 ICCL ICCH 4.6 4.2 3.8 -40 -20 0 20 40 60 80 100 10 TA – AMBIENT TEMPERATURE (°C) ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 12 14 16 18 20 VCC – SUPPLY VOLTAGE (V) www.fairchildsemi.com 6 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Typical Performance Curves Fig. 8 Propagation Delay vs. Forward LED Current Fig. 7 Propagation Delay vs. Load Capacitance 200 200 VCC = 20V, VEE = 0 RG = 10Ω, CG = 10nF f = 250 kHz, D. Cycle = 50% TA = 25oC VCC = 20V, VEE = 0 IF = 10mA, TA = 25oC RG = 10Ω, CG = 10nF f = 250 kHz, D. Cycle = 50% t P – PROPAGATION DELAY (ns) t P – PROPAGATION DELAY (ns) 180 160 tPHL 140 120 tPLH 100 80 180 160 tPHL 140 120 tPLH 100 80 60 60 5 10 15 20 25 6 8 CG – LOAD CAPACITANCE (nF) 12 14 16 Fig. 10 Propagation Delay vs. Ambient Temperature Fig. 9 Propagation Delay vs. Series Load Resistance 200 200 VCC = 20V, VEE = 0 VCC = 20V, VEE = 0 IF = 10mA, TA = 25oC CG = 10nF f = 250 kHz, D. Cycle = 50% 180 t P – PROPAGATION DELAY (ns) t P – PROPAGATION DELAY (ns) 10 IF – FORWARD LED CURRENT (mA) 160 140 tPHL 120 tPLH 100 80 IF = 10mA RG = 10Ω, CG = 10nF f = 250kHz, D. Cycle = 50% 180 160 140 tPHL 120 tPLH 100 80 60 60 10 20 30 40 50 -40 RG – SERIES LOAD RESISTANCE (Ω) -20 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) Fig. 11 Propagation Delay vs. Supply Voltage 180 t P – PROPAGATION DELAY (ns) IF = 10mA, TA = 25oC RG = 10Ω, CG = 10nF f = 250 kHz, D. Cycle = 50% 160 140 tPHL 120 tPLH 100 80 60 10 15 20 25 VCC – SUPPLY VOLTAGE (V) ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 7 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Typical Performance Curves (Continued) Through Hole 0.4" Lead Spacing PIN 1 ID. 4 3 2 PIN 1 ID. 1 4 3 2 1 0.270 (6.86) 0.250 (6.35) 5 6 7 0.270 (6.86) 0.250 (6.35) 8 5 6 0.070 (1.78) 0.045 (1.14) 0.020 (0.51) MIN 0.200 (5.08) 0.140 (3.55) 0.154 (3.90) 0.120 (3.05) 0.022 (0.56) 0.016 (0.41) 7 8 0.390 (9.91) 0.370 (9.40) SEATING PLANE SEATING PLANE 0.390 (9.91) 0.370 (9.40) 0.016 (0.40) 0.008 (0.20) 0.100 (2.54) TYP 0.070 (1.78) 0.045 (1.14) 0.004 (0.10) MIN 0.200 (5.08) 0.140 (3.55) 15° MAX 0.154 (3.90) 0.120 (3.05) 0.300 (7.62) TYP 0.022 (0.56) 0.016 (0.41) 0.016 (0.40) 0.008 (0.20) 0.100 (2.54) TYP Surface Mount 0° to 15° 0.400 (10.16) TYP 8-Pin DIP – Land Pattern 0.390 (9.91) 0.370 (9.40) 4 3 2 1 0.070 (1.78) PIN 1 ID. 0.060 (1.52) 0.270 (6.86) 0.250 (6.35) 5 6 7 0.100 (2.54) 8 0.295 (7.49) 0.070 (1.78) 0.045 (1.14) 0.020 (0.51) MIN 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP Lead Coplanarity : 0.004 (0.10) MAX 0.415 (10.54) 0.300 (7.62) TYP 0.030 (0.76) 0.016 (0.41) 0.008 (0.20) 0.045 (1.14) 0.315 (8.00) MIN 0.405 (10.30) MAX. Note: All dimensions are in inches (millimeters) ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 8 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Package Dimensions Option Order Entry Identifier (Example) No option FOD3180 S FOD3180S SD FOD3180SD T FOD3180T 0.4" Lead Spacing V FOD3180V VDE 0884 TV FOD3180TV VDE 0884, 0.4" Lead Spacing SV FOD3180SV VDE 0884, Surface Mount SDV FOD3180SDV Description Standard Through Hole Device Surface Mount, Lead Bend Surface Mount, Tape and Reel VDE 0884, Surface Mount, Tape and Reel Marking Information 1 3180 XX YY B V 3 2 6 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 9 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Ordering Information D0 P0 t K0 P2 E F A0 W1 d t P User Direction of Feed Symbol W W B0 Description D1 Dimension in mm Tape Width 16.0 ± 0.3 Tape Thickness 0.30 ± 0.05 P0 Sprocket Hole Pitch 4.0 ± 0.1 D0 Sprocket Hole Diameter 1.55 ± 0.05 E Sprocket Hole Location 1.75 ± 0.10 F Pocket Location 7.5 ± 0.1 4.0 ± 0.1 P2 P Pocket Pitch A0 Pocket Dimensions 12.0 ± 0.1 10.30 ±0.20 B0 10.30 ±0.20 K0 4.90 ±0.20 W1 d R ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 Cover Tape Width 1.6 ± 0.1 Cover Tape Thickness 0.1 max Max. Component Rotation or Tilt 10° Min. Bending Radius 30 www.fairchildsemi.com 10 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Carrier Tape Specifications 245 C, 10–30 s Temperature (°C) 300 260 C peak 250 200 150 Time above 183C, <160 sec 100 50 Ramp up = 2–10C/sec 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) • Peak reflow temperature: 260 C (package surface temperature) • Time of temperature higher than 183 C for 160 seconds or less • One time soldering reflow is recommended Output Power Derating The maximum package power dissipation is 295mW. The package is limited to this level to ensure that under normal operating conditions and over extended temperature range that the semiconductor junction temperatures do not exceed 125°C. The package power is composed of three elements; the LED, static operating power of the output IC, and the power dissipated in the output power MOSFET transistors. The power rating of the output IC is 250mW. This power is divided between the static power of the integrated circuit, which is the product of IDD times the power supply voltage (VDD – VEE). The maximum IC static output power is 150mW, (VDD – VEE) = 25V, IDD = 6mA. This maximum condition is valid over the operational temperature range of -40°C to +100°C. Under these maximum operating conditions, the output of the power MOSFET is allowed to dissipate 100mW of power. The output power is the product of the average output current squared times the output transistor’s RDS(ON): PO(AVG) = IO(AVG)2 • RDS(ON) The IO(AVG) is the product of the duty factor times the peak current flowing in the output. The duty factor is the ratio of the ‘on’ time of the output load current divided by the period of the operating frequency. An RDS(ON) of 2.0Ω results in an average output load current of 200mA. The load duty factor is a ratio of the average output time of the power MOSFET load circuit and period of the driving frequency. The maximum permissible, operating frequency is determined by the load supplied to the output at its resulting output pulse width. Figure 13 shows an example of a 0.03µF gate to source capacitance with a series resistance of 8.50Ω. This reactive load results in a composite average pulse width of 1.5µs. Under this load condition it is not necessary to derate the absolute maximum output current until the frequency of operation exceeds 63kHz. The absolute maximum output power dissipation versus ambient temperature is shown in Figure 12. The output driver is capable of supplying 100mW of output power over the temperature range from -40°C to 87°C. The output derates to 90mW at the absolute maximum operating temperature of 100°C. Fig. 13 Output Current Derating vs. Frequency Fig. 12 Absolute Maximum Power Dissipation vs. Ambient Temperature 2.5 0.15 IO – PEAK OUTPUT CURRENT (A) POWER DISSIPATION (W) VDD – VEE = Max. = 25V IDD = 6mA LED Power = 45mW 0.1 0.05 2 1.5 TA = -40°C to 100°C Load = .03µF +8.5Ω VDD = 20V IF = 12mA LED Duty Factor = 50% 1 Output Pulse Width = 1.5µs 0.5 0 1 0 -40 -20 0 20 40 60 80 10 100 F – FREQUENCY (kHz) 100 TA – AMBIENT TEMPERATURE (°C) ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 11 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Reflow Profile Figure 14 illustrates the relationship of the LED input drive current and the device’s output voltage and sourcing and sinking currents. The 0.03µF capacitor load represents the gate to source capacitance of a very large power MOSFET transistor. A single supply voltage of 20V is used in the evaluation. This device is tested and specified when driving a complex reactive load. The load consists of a capacitor in the series with a current limiting resistor. The capacitor represents the gate to source capacitance of a power MOSFET transistor. The test load is a 0.03µF capacitor in series with an 8.5Ω resistor. The LED test frequency is 10.0kHz with a 50% duty cycle. The combined IOH and IOL output load current duty factor is 0.6% at the test frequency. Figure 15 shows the test schematic to evaluate the output voltage and sourcing and sinking capability of the device. The IOH and IOL are measured at the peak of their respective current pulses. IF = 8mA LED OFF ON 20V N-Channel (ON) P-Channel (ON) OUTPUT 0 IOH = 2.2A Load Current IOL = 2.2A 1µs/Div Figure 14. FOD 3180 Output Current and Output Voltage vs. LED Drive Pulse Generator FOD3180 8 1 0.1µF 2 7 IOMON VO 0.33µF IFMON 100Ω 3 6 4 5 8.5Ω 22µF 100Ω Figure 15. Test Schematic ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 12 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler IOH and IOL Test Conditions PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® ® Fairchild Semiconductor FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® ® The Power Franchise TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 ©2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 13 FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.