SS22-S210 SS22 - S210 Features • Glass passivated junctions. • High current capability, low VF. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. SMB/DO-214AA COLOR BAND DENOTES CATHODE Schottky Rectifiers Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Parameter 22 23 24 25 20 30 40 50 Units 26 28 29 210 60 80 90 100 VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current .375 " lead length @ TA = 75°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature Value Units IFSM Tstg TJ V 2.0 A 50 A -65 to +150 °C -65 to +125 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter PD Power Dissipation 1.3 W RθJA Thermal Resistance, Junction to Ambient * 75 °C/W *Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol TA = 25°C unless otherwise noted Device Parameter 22 VF Forward Voltage @ 2.0 A IR Reverse Current @ rated VR TA = 25°C TA = 100°C 2001 Fairchild Semiconductor Corporation 23 500 24 25 26 700 0.4 10 Units 28 29 850 210 mV mA mA SS22-S210, Rev. C (continued) 2 50 20 Forward Current, IF [A] Average Rectified Forward Current, IF [A] Typical Characteristics 1.5 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 8.0x8.0mm COPPER PAD AREAS 1 0.5 0 50 60 70 SS22-24 5 SS28 - S210 1 SS25-26 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Forward Voltage, VF [V] 1 1.1 Figure 2. Forward Voltage Characteristics 10 500 T A = 100 ºC Total Capacitance, CT [pF] SS22-24 1 0.1 TA = 75º C SS25-S210 0.01 TA = 25º C 0 20 40 60 80 100 Reverse Voltage, VR[V] 120 SS22-24 200 100 TA = 25º C f = 1.0 MHz Vsig = 50mVp-p SS25-S210 50 20 10 0.1 140 Figure 3. Reverse Current vs Reverse Voltage Peak Forward Surge Current, IFSM [A] Reverse Current, IR [mA] 10 0.1 0.2 80 90 100 110 120 130 140 150 Lead Temperature [ºC] Figure 1. Forward Current Derating Curve 0.001 TA = 25º C f = 1.0 MHz Vsig = 50mVp-p 0.5 1 5 10 20 Reverse Voltage, VR [V] 50 100 Figure 4. Total Capacitance 60 50 8.3ms Single Half Sine-Wave JEDEC Method 40 30 20 10 0 1 2 5 10 20 50 Number of Cycles at 60Hz 100 Figure 5. Non-Repetitive Surge Current SS22-S210, Rev. C SS22-S210 Schottky Rectifiers TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4