SFH618A/SFH6186 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current FEATURES • Good CTR linearity depending on forward current • Low CTR degradation • High collector emitter voltage, VCEO = 55 V • Isolation test voltage, 5300 VRMS 1 • Low coupling capacitance A 1 4 C 1 C 2 3 E • End stackable, 0.100" (2.54 mm) spacing • High common mode transient immunity • Lead (Pb)-free component i179061 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION The SFH618A (DIP) and SFH6186 (SMD) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between two electrically separated circuits.The couplers are end-stackable with 2.54 mm lead spacing. Creepage and clearance distances of > 8.0 mm achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation to an operation voltage of 400 VRMS or DC. APPLICATIONS • Telecom • Industrial controls • Battery powered equipment • Office machines AGENCY APPROVALS • UL1577, file no. E52744 system code H or J, double protection • CSA 93751 • DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1 • BSI IEC 60950; IEC 60065 • FIMKO ORDER INFORMATION PART REMARKS SFH618A-2 CTR 63 to 125 %, DIP-4 SFH618A-3 CTR 100 to 200 %, DIP-4 SFH618A-4 CTR 160 to 320 %, DIP-4 SFH618A-5 CTR 250 to 500 %, DIP-4 SFH6186-2 CTR 63 to 125 %, SMD-4 SFH6186-3 CTR 100 to 200 %, SMD-4 SFH6186-4 CTR 160 to 320 %, SMD-4 SFH6186-5 CTR 250 to 500 %, SMD-4 SFH618A-3X006 CTR 100 to 200 %, DIP-4 400 mil (option 6) SFH618A-3X007 CTR 100 to 200 %, SMD-4 (option 7) SFH618A-4X006 CTR 160 to 320 %, DIP-4 400 mil (option 6) SFH618A-5X006 CTR 250 to 500 %, DIP-4 400 mil (option 6) SFH618A-5X007 CTR 250 to 500 %, SMD-4 (option 7) Note For additional information on the available options refer to option information. Document Number: 83673 Rev. 1.8, 25-Jan-08 For technical questions, contact: [email protected] www.vishay.com 1 SFH618A/SFH6186 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current ABSOLUTE MAXIMUM RATINGS PARAMETER (1) TEST CONDITION SYMBOL VALUE VR 6.0 UNIT INPUT Reverse voltage Power dissipation V Pdiss Forward current mW IF 60 mA OUTPUT Collector emitter voltage VCE 55 V Emitter collector voltage VEC 7.0 V IC 50 mA IC 100 mA Pdiss 150 mW VISO 5300 VRMS VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tj 100 °C Tsld 260 °C Collector current tp ≤ 1.0 ms Power dissipation COUPLER Isolation test voltage between emitter and detector, refer to Climate DIN 40046, part 2, Nov. 74 Isolation resistance Junction temperature Soldering temperature max. 10 s, dip soldering distance to seating plane ≥ 1.5 mm (2) Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Ptot - Power Dissipation (mW) 200 150 Detector 100 LED 50 0 0 19386 20 40 60 80 100 120 Tamb - Ambient Temperature ( C ) Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 5.0 mA VF 1.1 1.5 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance Thermal resistance www.vishay.com 2 VR = 0 V, f = 1.0 MHz CO 25 pF Rthja 1070 K/W For technical questions, contact: [email protected] Document Number: 83673 Rev. 1.8, 25-Jan-08 SFH618A/SFH6186 Optocoupler, Phototransistor Output, Vishay Semiconductors Low Input Current ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 200 nA OUTPUT Collector emitter leakage current Collector emitter capacitance VCE = 10 V ICEO 10 VCE = 5.0 V, f = 1.0 MHz CCE 7.0 pF Rthja 500 K/W SFH618A-2 VCEsat 0.25 0.4 V SFH6186-2 VCEsat 0.25 0.4 V SFH618A-3 VCEsat 0.25 0.4 V Thermal resistance COUPLER IC = 0.32 mA, IF = 1.0 mA Collector emitter saturation voltage IC = 0.5 mA, IF = 1.0 mA IC = 0.8 mA, IF = 1.0 mA IC = 1.25 mA, IF = 1.0 mA SFH6186-3 VCEsat 0.25 0.4 V SFH618A-4 VCEsat 0.25 0.4 V SFH6186-4 VCEsat 0.25 0.4 V SFH618A-5 VCEsat 0.25 0.4 V SFH6186-5 VCEsat 0.25 0.4 V Coupling capacitance CC 0.25 pF Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IC/IF IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V IF = 1.0 mA, VCE = 0.5 V IF = 0.5 mA, VCE = 1.5 V PART SYMBOL MIN. SFH618A-2 CTR 63 TYP. MAX. 125 UNIT % SFH6186-2 CTR 63 125 % SFH618A-2 CTR 32 75 % SFH6186-2 CTR 32 75 % SFH618A-3 CTR 100 200 % SFH6186-3 CTR 100 200 % SFH618A-3 CTR 50 120 % SFH6186-3 CTR 50 120 % SFH618A-4 CTR 160 320 % SFH6186-4 CTR 160 320 % SFH618A-4 CTR 80 200 % SFH6186-4 CTR 80 200 % SFH618A-5 CTR 250 500 % SFH6186-5 CTR 250 500 % SFH618A-5 CTR 125 300 % SFH6186-5 CTR 125 300 % SYMBOL ton tr toff tf MIN. TYP. 6.0 3.5 5.5 5.0 SWITCHING CHARACTERISTICS PARAMETER Turn on time Rise time Turn off time Fall time Document Number: 83673 Rev. 1.8, 25-Jan-08 TEST CONDITION VCC = 5.0 V, IC = 2.0 mA, RL = 100 Ω VCC = 5.0 V, IC = 2.0 mA, RL = 100 Ω VCC = 5.0 V, IC = 2.0 mA, RL = 100 Ω VCC = 5.0 V, IC = 2.0 mA, RL = 100 Ω For technical questions, contact: [email protected] MAX. UNIT µs µs µs µs www.vishay.com 3 SFH618A/SFH6186 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current Input Pulse VCC = 5 V Input RL 10 % VOUT Output Pulse 90 % tr t off t on isfh618a_10 tf isfh618a_12 Fig. 2 - Test Circuit Fig. 3 - Test Circuit and Waveforms SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. Climatic classification (according to IEC 68 part 1) TYP. MAX. UNIT 55/100/21 Comparative tracking index CTI 175 399 VIOTM 10000 V VIORM 890 V PSO 400 mW ISI 275 mA TSI 175 °C Creepage distance standard DIP-4 7 mm Clearance distance standard DIP-4 7 mm Creepage distance 400 mil DIP-4 8 mm Clearance distance 400 mil DIP-4 8 mm Insulation thickness, reinforced rated per IEC 60950 2.10.5.1 0.4 mm Note As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 83673 Rev. 1.8, 25-Jan-08 SFH618A/SFH6186 Optocoupler, Phototransistor Output, Vishay Semiconductors Low Input Current TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified CTR 280 % 240 VCE = 0.5 V, CTR = f (TA) VF 200 1.05 120 IF = 2mA 80 IF = 1mA 40 1 0.95 IF = 0.5mA 0 - 40 - 20 0 20 40 isfh618a_01 60 TA ºC 0 - 40 - 20 100 0 20 40 isfh618a_04 60 TA ºC 100 Fig. 7 - Diode Forward Voltage (Typ.) Fig. 4 - Current Transfer Ratio (Typ.) CTR IF = 1.0 mA, VF = f (TA) 1.1 IF = 5mA 160 1.2 V 1.15 280 % 240 20 pF CCE TA = 25 ºC, f = 1.0 MHz CEE = f (VCE) 16 200 IF = 5mA 12 120 IF = 2mA 8 80 IF = 1mA 40 IF = 0.5mA 160 0 - 40 - 20 0 20 40 isfh618a_02 60 TA ºC 4 0 10-2 100 101 VCE V 102 Fig. 8 - Transistor Capacitance 1.2 Vr 100 isfh618a_05 Fig. 5 - Current Transfer Ratio (Typ.) V 1.15 10-1 TA = 25 ºC, VF = f (IF) ICE OHOO2119 12 mA 10 IF = 5 mA TA = 25 ºC, CE = f (VCE, IF) 1.1 8 1.05 6 1 4 IF = 2 mA 0.95 2 IF = 1 mA 0.9 10-1 isfh618a_03 100 mA IF Fig. 6 - Diode Forward Voltage (Typ.) Document Number: 83673 Rev. 1.8, 25-Jan-08 101 0 10-2 IF = 0.5 mA 10-1 isfh618a_06 100 101 VCE V 102 Fig. 9 - Output Characteristics For technical questions, contact: [email protected] www.vishay.com 5 SFH618A/SFH6186 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current 103 t t off μ5 tF 102 t on tR 101 100 102 TA = 25 ºC, IF = 1.0 mA, VCC = 5.0 V, tON, tR, tOFF, tF, = f (RL) 103 104 RL isfh618a_09 105 Ω Fig. 10 - Switching Times (Typ.) PACKAGE DIMENSIONS in inches (millimeters) 2 1 Pin one ID 0.255 (6.48) 0.268 (6.81) ISO method A 3 4 0.179 (4.55) 0.190 (4.83) 0.300 (7.62) typ. 0.031 (0.79) typ. 0.030 (0.76) 0.045 (1.14) 0.050 (1.27) typ. 0.130 (3.30) 0.150 (3.81) 10° 4° typ. 0.018 (0.46) i178027 0.230 (5.84) 0.250 (6.35) 0.022 (0.56) 0.020 (0.508) 0.035 (0.89) 0.050 (1.27) 0.110 (2.79) 0.130 (3.30) 3° to 9° 0.008 (0.20) 0.012 (0.30) 0.100 (2.54) www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 83673 Rev. 1.8, 25-Jan-08 SFH618A/SFH6186 Optocoupler, Phototransistor Output, Vishay Semiconductors Low Input Current SMD 0.030 (0.76) Pin one ID 0.100 (2.54) R 0.010 (0.25) 0.070 (1.78) 0.255 (6.48) 0.268 (6.81) 0.315 (8.00) min. 0.060 (1.52) 0.435 (11.05) 3 4 0.375 (9.52) 0.305 (10.03) 0.179 (4.55) 0.190 (4.83) 0.030 (0.76) 0.045 (1.14) 0.296 (7.52) 0.312 (7.90) 0.031 (0.79) typ. 10 ° 0.010 (0.25) 0.130 (3.30) 0.150 (3.81) typ. ISO method A 1.00 (2.54) typ. i178029 0.315 (8.00) 0.0098 (0.249) 0.035 (0.102) 4° typ. min. 0.020 (0.508) 0.040 (1.02) Lead coplanarity 0.004 max. 0.050 (1.27) typ. Option 6 Option 7 0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4) 0.300 (7.62) typ. 0.028 (0.7) min. 3° to 7° 0.180 (4.6) 0.160 (4.1) 0.315 (8.0) min. 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) Document Number: 83673 Rev. 1.8, 25-Jan-08 0.331 (8.4) min. 0.406 (10.3) max. For technical questions, contact: [email protected] 18450-1 www.vishay.com 7 SFH618A/SFH6186 Vishay Semiconductors Optocoupler, Phototransistor Output, Low Input Current OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 83673 Rev. 1.8, 25-Jan-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1