NT IA PL M CO S oH Features Applications ■ Formerly ■ POTS linecards ■ ■ VolP equipment brand Extremely high speed performance Blocks high voltages and currents Two TBU™ protectors in one small package Simple, superior circuit protection Minimal PCB area RoHS compliant*, UL Recognized *R ■ ■ ■ ■ ■ ■ Voice and data combo linecards ■ ONU, ONT ■ Gateways ■ Cable and DSL modems TBU™ P500-G and P850-G Protectors Transient Blocking Units - TBU™ Devices Bourns® Model P500-G and P850-G TBU™ products are high speed, surge protection components designed to protect Subscriber Line Interface Circuits (SLICs) against transients caused by AC power cross, induction and lightning surges. Agency Approval UL recognized component File # E315805. The TBU™ device blocks surges and provides an effective barrier behind which sensitive electronics are not exposed to large voltages or currents during surge events. Industry Standards Description Model Port Type 2, 4 P500-G Port Type 3, 5 P850-G Telcordia GR-1089 ITU-T K.20, K.20E, K.21, K.21E, K.45 P850-G Absolute Maximum Ratings (Tamb = 25 °C) Symbol Parameter Value Unit Vimp Maximum protection voltage for impulse faults with rise time ≥ 1 µsec P500-Gxxx-WH P850-Gxxx-WH 500 850 V Vrms Maximum protection voltage for continuous Vrms faults P500-Gxxx-WH P850-Gxxx-WH 300 425 V Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -65 to +150 °C Electrical Characteristics (Tamb = 25 °C) Symbol Parameter Min. Iop Maximum current through the device that will not cause current blocking P500-G120-WH P500-G200-WH P850-G120-WH P850-G200-WH Itrigger Typical current for the device to go from normal operating state to protected state P500-G120-WH P500-G200-WH P850-G120-WH P850-G200-WH Iout Maximum current through the device P500-G120-WH P500-G200-WH P850-G120-WH P850-G200-WH RTBU Series resistance of the TBU™ device Typ. Max. Unit 100 200 100 200 mA 150 275 150 275 50 mA 200 400 200 400 mA 55 Ω Rbal Line-to line series resistance difference between two TBU devices 2 Ω tblock Maximum time for the device to go from normal operating state to protected state 1 µs Iquiescent Current through the triggered TBU™ device with 50 Vdc circuit voltage 0.7 mA Vreset Voltage below which the triggered TBU™ device will transition to normal operating state 22 V ™ The P-G series TBU™ devices are bidirectional; specifications are valid in both directions. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications TBU™ P500-G and P850-G Protectors Typical Performance Characteristics Time to Block vs. Fault Current V-I Characteristics 1 +I Itrigger -Vreset +V Vreset Time to Block (sec) 0.1 0.01 0.001 0.0001 0.00001 0.000001 0.0000001 0.1 1 10 100 1000 Fault Current (A) -Itrigger Trigger Current Temperature 140 % of Trigger Current 120 100 80 60 40 20 -40 -20 0 20 40 60 80 Temperature (°C) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications TBU™ P500-G and P850-G Protectors Operational Characteristics The graphs below demonstrate the operational characteristics of the TBU™ device. For each graph the fault voltage, protected side voltage, and current is presented. V2 V1 Equipment Tip Pxxx-G TEST CONFIGURATION DIAGRAM Ring P500-G Lightning, 500 V P850-G Lightning, 850 V 3 200 mA/div. 100 V/div. 400 mA/div. 3 2 2 1 1 1 µs/div. Ch1 V1 Ch2 V2 1 µs/div. Ch3 Current Ch1 V1 P500-G Power Fault, 120 Vrms, 25 A Ch2 V2 Ch3 Current P850-G Power Fault, 230 Vrms, 25 A 3 2 3 200 mA/div. 100 V/div. 100 V/div. 200 mA/div. 2 1 1 4 ms/div. Ch1 V1 Ch2 V2 4 ms/div. Ch3 Current Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications Ch1 V1 Ch2 V2 Ch3 Current TBU™ P500-G and P850-G Protectors Product Dimensions K P500-Gxxx J B C Dim. J K E F E N A 4 5 6 B A H 3 2 1 C M D PIN 1 D TOP VIEW N SIDE VIEW P850-Gxxx L G C F K K J B E BOTTOM VIEW G E 4A 4 5 6 6A 3A 3 2 1 1A A G N H J H H M K PIN 1 TOP VIEW SIDE VIEW L N D BOTTOM VIEW M Pads 1A and 1 are internally connected; the same for pads 3A with 3, 4A with 4, and 6A with 6. This allows for one PCB layout to accommodate the P500 or P850. 0.75 (.030) 1.225 (.048) 1.275 (.050) 1.15 (.045) 0.375 (.015) 1.225 (.048) 0.85 (.033) 1.25 (.049) 1.15 (.045) 0.375 (.015) 0.30 (.012) Pad Designation Pad # Apply 1 Tip In 2 NC 3 Tip Out 4 Ring Out 5 NC 6 Ring In 0.75 (.030) -- -- -- 1.10 (.043) 0.375 (.015) 0.70 (.028) 1.20 (.047) 0.425 (.017) 0.75 (.030) 1.30 (.051) 0.475 (.019) 0.80 (.031) -- -- -- N 0.70 (.028) 0.375 (.015) 0.75 0.80 (.030) (.031) 0.425 0.475 (.017) (.018) Min. 3.40 (.139) 8.15 (.321) 0.80 (.031) 0.000 (.000) 1.15 (.045) 1.05 (.041) 0.725 (.029) 1.10 (.043) 0.375 (.015) 0.25 (.010) 0.70 (.028) 0.70 (.028) 0.375 (.015) P850-G Typ. 4.00 (.157) 8.25 (.325) 0.85 (.033) 0.025 (.001) 1.25 (.049) 1.15 (.045) 0.825 (.032) 1.20 (.047) 0.425 (.017) 0.30 (.012) 0.75 (.030) 0.75 (.030) 0.425 (.017) Max. 4.10 (.161) 8.35 (.329) 0.90 (.035) 0.050 (.002) 1.35 (.053) 1.25 (.049) 0.925 (.036) 1.30 (.051) 0.475 (.019) 0.35 (.014) 0.80 (.031) 0.80 (.031) 0.475 (.018) MM (INCHES) Block Diagram P500-Gxxx NC = Solder to PCB; do not make electrical connection, do not connect to ground. P850-Gxxx Max. 4.10 (.161) 6.10 (.240) 0.90 (.035) 0.050 (.002) 1.35 (.053) 1.25 (.049) DIMENSIONS: Recommended Pad Layout P500-Gxxx P500-G Typ. 4.00 (.157) 6.00 (.236) 0.85 (.033) 0.025 (.001) 1.25 (.049) 1.15 (.045) J L F E Min. 3.40 (.139) 5.90 (.232) 0.80 (.031) 0.000 (.000) 1.15 (.045) 1.05 (.041) Pad Designation Pad # Apply Pad # Apply 1A Tip In 4A Ring Out 1 Tip In 4 Ring Out 2 NC 5 NC 3 Tip Out 6 Ring In 3A Tip Out 6A Ring In NC = Solder to PCB; do not make electrical connection, do not connect to ground. TBU™ devices have matte-tin termination finish. Suggested layout should use non-solder mask define (NSMD). Recommended stencil thickness is 0.10-0.12 mm (.004-.005 in.) with stencil opening size 0.025 mm (.0010 in.) less than the device pad size. As when heat sinking any power device, it is recommended that, wherever possible, extra PCB copper area is allowed. For minimum parasitic capacitance, do not allow any signal, ground or power signals beneath any of the pads of the device. 6 4 1 3 P850-Gxxx 6 & 6A 4 & 4A 1 & 1A 3 & 3A Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications TBU™ P500-G and P850-G Protectors Thermal Resistances Part # Symbol P500-G Rth(j-a) Parameter Value Unit 113 °C/W Junction to leads (per TBU device) 236 °C/W Junction to leads (package) 119 °C/W 215 °C/W Junction to leads (package) P850-G Rth(j-a) ™ ™ Junction to leads (per TBU device) Reflow Profile Profile Feature Pb-Free Assembly Average Ramp-Up Rate (Tsmax to Tp) 3 °C/sec. max. Preheat - Temperature Min. (Tsmin) - Temperature Max. (Tsmax) - Time (tsmin to tsmax) 150 °C 200 °C 60-180 sec. Time maintained above: - Temperature (TL) - Time (tL) 217 °C 60-150 sec. Peak/Classification Temperature (Tp) 260 °C Time within 5 °C of Actual Peak Temp. (tp) 20-40 sec. Ramp-Down Rate 6 °C/sec. max. Time 25 °C to Peak Temperature 8 min. max. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications ™ - 2 mm Trimming Potentiometer TBU3312 P500-G and SMD P850-G Protectors How to Order Typical Part Marking P 500 - G 120 - WH __ MANUFACTURER’S TRADEMARK* Form Factor P = Two TBU™ protectors in one device Impulse Voltage Rating 500 = 500 V 850 = 850 V MARKING NUMBER 50GA = P500-G120-WH 50GB = P500-G200-WH 85GA = P850-G120-WH 85GB = P850-G200-WH MANUFACTURING DATE CODE Directional Indication for Paired Devices G = Bidirectional PIN 1 Iop Indicator 120 = 100 mA 200 = 200 mA *TRANSITION FROM FULTEC TRADEMARK TO BOURNS TRADEMARK IN 2009. Packaging Indicator Blank = Packaged in tape and reel (3000 pieces per reel) X = Packaged in tubes Packaging Specifications (per EIA468-B) P0 E D t B P2 TOP COVER TAPE A N F W C D B0 K0 CENTER LINES OF CAVITY A0 P D1 EMBOSSMENT G (MEASURED AT HUB) USER DIRECTION OF FEED A Device Min. 326 (12.835) P500-G, P850-G Device A0 B Max. 330.25 (13.002) Min. 1.5 (.059) B0 C Max. 2.5 (.098) Min. 12.8 (.504) D D N Ref. 102 (4.016) Min. 20.2 (.795) Max. Min. Max. Min. max. 1.85 (.073) 5.4 (.213) 5.6 (.220) 1.85 (.073) 7.4 (.291) 7.6 (.299) D1 Max. G Ref. 16.5 (.650) Max. 13.5 (.531) E F Min. Max. Min. Max. Min. Max. Min. P500-G 4.2 (.165) 4.4 (.173) 6.2 (.244) 6.4 (.252) 1.5 (.059) 1.6 (.063) 1.5 (.059) - 1.65 (.065) P850-G 4.2 (.165) 4.4 (.173) 8.45 (.333) 8.65 (.341) 1.5 (.059) 1.6 (.063) 1.5 (.059) - 1.65 (.065) Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. P500-G 1.0 (.039) 1.2 (.047) 7.9 (.311) 8.1 (.319) 3.9 (.159) 4.1 (.161) 1.9 (.075) 2.1 (.083) 0.25 (.010) 0.35 (.014) 11.7 (.461) 12.3 (.484) P850-G 1.1 (.043) 1.3 (.051) 7.9 (.311) 8.1 (.319) 3.9 (.159) 4.1 (.161) 1.9 (.075) 2.1 (.083) 0.25 (.010) 0.35 (.014) 15.7 (.618) 16.3 (.642) Device K0 P P0 DIMENSIONS: P2 t W MM (INCHES) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications ™ - 2 mm SMD Trimming Potentiometer 3312 TBU P500-G and P850-G Protectors Reference Designs A cost-effective protection solution combines the Bourns® TBU™ protection device with a pair of MOVs or Bourns® GDTs and a diode bridge. The diagram below illustrates a common configuration of these components. The graphs to the right demonstrate the operational characteristics of the circuit. V1 Equipment V2 -V REF MOVs or GDTs Pxxx-G Common Configuration Diagram P500-G Configuration (GR-1089 Intra-building and 5 kV Lightning) Part Number Source TBU Device 1 P500-Gxxx-WH Bourns, Inc. MOV 2 CNR-10D201K GNR10D201K CNR Centra Science Ceramate Technical Diode bridge 2 GSD2004S-V MMBD2004S Vishay Diodes Inc. 3 400 mA/div. Qty. ™ 100 V/div. Product 2 1 500 ns/div. Ch1 V1 Ch2 V2 Ch3 Current P500-G Solution: 5000 V Lightning 2/10 µsec, 500 A P850-G Configuration (ITU-T K.20, K.21, K.20E, K.21E, K.45) Part Number 1 P850-G120-WH Bourns, Inc. MOV 2 CNR-10D361K GNR10D361K CNR Centra Science Ceramate Technical Diode bridge 2 GSD2004S-V MMBD2004S Vishay Diodes Inc. TBU Device Source 3 400 mA/div. Qty. ™ 100 V/div. Product 2 1 Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications 500 ns/div. Ch1 V1 Ch2 V2 Ch3 Current P850-G Solution: 4000 V Lightning 10/700 µsec, 100 A REV. 12/08 COPYRIGHT©2008, BOURNS, INC. LITHO IN U.S.A. e 12/08 FU0801