PD-93760B
IRF7530
HEXFET® Power MOSFET
●
●
●
●
●
●
Trench Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
S1
G1
S2
G2
1
8
D1
2
7
D1
3
6
D2
4
5
D2
VDSS = 20V
RDS(on) = 0.030Ω
T o p V ie w
Description
New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current Q
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche EnergyT
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
20
5.4
4.3
40
1.3
0.80
10
33
± 12
-55 to + 150
V
mW/°C
mJ
V
°C
Max.
Units
100
°C/W
A
W
Thermal Resistance
Parameter
RθJA
www.irf.com
Maximum Junction-to-AmbientS
1
02/16/01
IRF7530
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.60
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.01
–––
–––
–––
–––
–––
–––
–––
–––
18
3.4
3.4
8.5
11
36
16
1310
180
150
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250uA
––– V/°C Reference to 25°C, ID = 1mA
0.030
VGS = 4.5V, ID = 5.4A R
Ω
0.045
VGS = 2.5V, ID = 4.6A R
1.2
V
VDS = VGS, ID = 250µA
–––
S
VDS = 10V, ID = 5.4A
1.0
VDS = 16V, VGS = 0V
µA
25
VDS = 16V, VGS = 0V, TJ = 70°C
100
VGS = 12V
nA
-100
VGS = -12V
26
ID = 5.4A
5.1
nC
VDS = 16V
5.1
VGS = 4.5V R
–––
VDD = 10V
–––
ID = 1.0A
ns
–––
RG = 6.0Ω
–––
RD = 10Ω R
–––
VGS = 0V
–––
pF
VDS = 15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Q
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
1.3
–––
–––
40
–––
–––
–––
–––
19
13
1.2
29
20
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.3A, VGS = 0V R
TJ = 25°C, IF = 1.3A
di/dt = 100A/µs R
D
S
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature.
R Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
S When mounted on 1 inch square copper board, t<10 sec
T Starting TJ = 25°C, L = 2.6mH
RG = 25Ω, IAS = 5.0A. (See Figure 10)
www.irf.com
IRF7530
100
100
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
2.25V
20µs PULSE WIDTH
T = 25 C
°
J
10
0.1
1
10
2.25V
100
TJ = 25 ° C
TJ = 150 ° C
V DS = 15V
20µs PULSE WIDTH
3.5
4.0
Fig 3. Typical Transfer Characteristics
www.irf.com
4.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
3.0
1
10
100
Fig 2. Typical Output Characteristics
100
2.5
°
J
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
VGS , Gate-to-Source Voltage (V)
20µs PULSE WIDTH
T = 150 C
10
0.1
VDS , Drain-to-Source Voltage (V)
10
2.0
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 5.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7530
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1600
C, Capacitance (pF)
Ciss
1200
800
400
Coss
10
VGS , Gate-to-Source Voltage (V)
2000
C
rss
VDS = 16V
VDS = 10V
VDS = 4V
8
6
4
2
0
0
1
ID = 5.4A
5.0A
10
0
100
5
10
15
20
25
30
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY R
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
DS(on)
TJ = 150 ° C
10
TJ = 25 ° C
1
0.5
1.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100us
10
1ms
10ms
1
V GS = 0 V
1.0
10us
2.0
TA = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF7530
5.0
EAS , Single Pulse Avalanche Energy (mJ)
4.0
I D , Drain Current (A)
80
3.0
2.0
1.0
0.0
25
50
75
100
125
150
TOP
BOTTOM
60
ID
2.2A
4.0A
5.0A
40
20
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
TC , Case Temperature ( ° C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
P DM
0.02
t1
0.01
1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
R DS ( on) , Drain-to-Source On Resistance ( Ω )
IRF7530
R DS(on) , Drain-to -Source Voltage ( Ω )
0.04
0.03
Id = 5.0A
0.02
0.01
2.0
3.0
4.0
5.0
6.0
VGS, Gate -to -Source Voltage ( V )
Fig 12. On-Resistance Vs. Gate Voltage
6
7.0
0.10
0.08
0.06
0.04
VGS= 2.5V
VGS = 4.5V
0.02
0
10
20
30
VGS, Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Drain Current
www.irf.com
40
IRF7530
Micro8 Package Outline
Dimensions are shown in millimeters (inches)
LE A D A S S IG N M E N T S
IN C H E S
D IM
D
3
-B -
D D D D
8 7 6 5
D 1 D 1 D 2 D2
8 7 6 5
8 7 6 5
3
H
E
0.2 5 (.0 1 0)
-A -
M
A
M
S ING LE
D U AL
1 2 3 4
1 2 3 4
S S S G
S 1 G 1 S2 G 2
1 2 3 4
e
6X
M IL L IM E T E R S
M IN
M AX
M IN
M AX
A
.0 3 6
.0 44
0 .9 1
1 .11
A1
.0 0 4
.0 08
0 .1 0
0 .20
B
.0 1 0
.0 14
0 .2 5
0 .36
C
.0 05
.0 0 7
0 .1 3
0 .1 8
D
.1 16
.1 2 0
2 .9 5
3 .0 5
e
.0 2 5 6 B A SIC
0 .6 5 BA S IC
e1
.0 1 2 8 B A SIC
0 .3 3 BA S IC
E
.1 1 6
.1 20
2.9 5
3 .0 5
H
.1 88
.1 9 8
4 .7 8
5 .0 3
L
.0 1 6
.0 2 6
0 .4 1
0 .6 6
θ
0°
6°
0°
6°
e1
R E C O M M E N D E D F O O T P R IN T
θ
1 .04
( .04 1 )
8X
A
-C B
0 .1 0 ( .00 4 )
A1
8X
0 .0 8 (.0 0 3 )
M
C A S
0 .38
8X
( .0 1 5 )
C
L
8X
8X
B S
3 .2 0
( .1 2 6 )
4 .24
5 .2 8
( .1 6 7 ) ( .20 8 )
N O TES :
1 D IM E N SIO NIN G A ND T OL ER A NC IN G P E R A N SI Y 14 .5M -1982 .
0 .6 5 6 X
( .02 5 6 )
2 C ON TR OL LING DIM EN S ION : IN C H.
3 D IM E N SIO NS DO N O T IN CL UD E M OLD F L AS H .
Micro8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7501
LOT CODE (XX)
DATE CODE (YW)
Y = YEAR
W = WEEK
PART NUMBER
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
DATE CODE EXAMPLES :
YWW = 9503 = 5C
YWW = 9532 = EF
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
WW = (27-52) IF PRECEDED BY A LETTER
www.irf.com
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
7
IRF7530
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IR E C T IO N
N OTES:
1 . O U TL IN E C O N F O R M S TO E IA -4 81 & E IA -54 1.
2 . C O N TR O LL IN G D IM E N SIO N : M IL LIM E TE R.
3 3 0 .0 0
(1 2 .9 9 2 )
MAX.
1 4 .4 0 ( .5 6 6 )
1 2 .4 0 ( .4 8 8 )
NO TES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/01
8
www.irf.com