IRF IRF7317

PD - 9.1568B
IRF7317
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
S1
G1
S2
G2
N -C H A N N EL M O S FET
1
8
D1
2
7
D1
3
6
D2
4
5
D2
P-Ch
20V
-20V
VDSS
RDS(on) 0.029Ω 0.058Ω
P -C H AN N E L MO S FET
Description
N-Ch
T o p V ie w
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
S O -8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
V DS
VGS
Continuous Drain Current…
TA = 25°C
TA = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation …
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
ID
IDM
IS
Maximum
P-Channel
N-Channel
20
6.6
5.3
26
2.5
-5.3
-4.3
-21
-2.5
2.0
1.3
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
-20
± 12
100
4.1
Units
V
A
W
150
-2.9
0.20
mJ
A
mJ
V/ ns
5.0
-5.0
-55 to + 150 °C
Symbol
Limit
Units
RθJA
62.5
°C/W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient …
12/9/97
IRF7317
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Min.
20
-20
—
—
—
—
—
—
0.7
-0.7
—
—
—
—
—
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
P-Ch
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Typ. Max.
—
—
—
—
0.027 —
0.031 —
0.023 0.029
0.030 0.046
0.049 0.058
0.082 0.098
—
—
—
—
20
—
5.9 —
— 1.0
— -1.0
— 5.0
— -25
— ±100
18
27
19
29
2.2 3.3
4.0 6.1
6.2 9.3
7.7 12
8.1 12
15
22
17
25
40
60
38
57
42
63
31
47
49
73
900 —
780 —
430 —
470 —
200 —
240 —
Units
V
V/°C
Ω
V
S
µA
nA
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 6.0A „
VGS = 2.7V, ID = 5.2A „
VGS = -4.5V, ID = -2.9A „
VGS = -2.7V, ID = -1.5A „
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 6.0A „
VDS = -10V, ID = -1.5A
„
VDS = 16V, VGS = 0V
VDS = -16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 55°C
VDS = -16V, VGS = 0V, TJ = 55°C
VGS = ±12V
N-Channel
ID = 6.0A, VDS = 10V, VGS = 4.5V
nC
„
P-Channel
ID = -2.9A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.0Ω,
RD = 10Ω
ns
„
P-Channel
VDD = -10V, ID = -2.9A, RG = 6.0Ω,
RD = 3.4Ω
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
pF
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 2.5
—
— -2.5
A
—
—
26
—
— -21
— 0.72 1.0
TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
V
— -0.78 -1.0
TJ = 25°C, IS = -2.9A, VGS = 0V ƒ
—
52
77
N-Channel
ns
—
47
71
TJ = 25°C, IF =1.7A, di/dt = 100A/µs
—
58
86
P-Channel
„
nC
TJ = 25°C, IF = -2.9A, di/dt = 100A/µs
—
49
73
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 22 )
… Surface mounted on FR-4 board, t ≤ 10sec.
‚ N-Channel ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ N-Channel Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.9A.
IRF7317
N-Channel
100
100
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM 1.50V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM 1.50V
TOP
TOP
10
1.50V
10
1.50V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
VDS , Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
100
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 150 ° C
10
1
1.5
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
V DS = 10V
20µs PULSE WIDTH
2.0
2.5
3.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
TJ = 150 ° C
10
TJ = 25 ° C
1
0.4
V GS = 0 V
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
1.6
IRF7317
RDS (on) , Drain-to-Source On Resistance (Ω)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
N-Channel
ID = 6.0A
1.5
1.0
0.5
VGS = 4.5V
0.0
-60 -40 -20
0
20
40
60
0.032
V G S = 2.7V
0.028
0.024
VG S = 4.5V
0.020
80 100 120 140 160
A
0
10
TJ , Junction Temperature( °C)
30
I D , Drain C urrent (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 5. Normalized On-Resistance
Vs. Temperature
0.05
300
0.04
0.03
I D = 6.6A
0.02
0.01
A
0
2
4
6
V G S , Gate-to-S ource V oltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
8
EAS , Single Pulse Avalanche Energy (mJ)
RDS (on) , Drain-to-Source On Resistance (Ω)
20
TOP
250
BOTTOM
ID
1.8A
3.3A
4.1A
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature( ° C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
150
IRF7317
N-Channel
V GS
C iss
C rss
C is s C oss
=
=
=
=
10
0V ,
f = 1M H z
C gs + C gd , C ds S H O R TE D
C gd
C ds + C gd
-VGS , Gate-to-Source Voltage (V)
C , C apacitanc e (pF )
1600
1200
C os s
800
C rs s
400
0
A
1
10
ID = 6.0A
VDS = 10V
8
6
4
2
0
0
100
5
10
15
20
25
30
Q G , Total Gate Charge (nC)
V D S , D rain-to-S ource V oltage (V )
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7317
100
P-Channel
100
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
TOP
TOP
10
-1.50V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
-1.50V
1
0.1
0.1
Fig 12. Typical Output Characteristics
10
Fig 13. Typical Output Characteristics
100
100
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
TJ = 25 ° C
TJ = 150 ° C
10
1
1.5
20µs PULSE WIDTH
TJ = 150 °C
V DS = -10V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
-VGS , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
5.0
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode
Forward Voltage
1.4
IRF7317
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
2.0
RDS(on) , Drain-to-Source On Resistance ( Ω )
P-Channel
I D = -2.9A
1.5
1.0
0.5
V G S = -4.5V
0.0
-60
-40
-20
0
20
40
60
80
100 120
0.8
0.6
V G S = -2.7V
0.4
0.2
V G S = -4.5V
0.0
A
140 160
0
4
12
Fig 17. Typical On-Resistance Vs. Drain
Current
0.08
0.07
0.06
I D = -5.3A
0.05
0.04
0.03
A
4.0
6.0
V G S , Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
8.0
EAS , Single Pulse Avalanche Energy (mJ)
400
2.0
20
-I D , Drain Current (A)
Fig 16. Normalized On-Resistance
Vs. Temperature
0.0
16
-ID , Drain Current (A)
T J , Junction T em perature (°C )
RDS(on) , Drain-to-Source On Resistance ( Ω )
8
ID
-1.3A
-2.3A
BOTTOM -2.9A
TOP
300
200
100
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
150
A
IRF7317
10
V GS
C is s
C rs s
C oss
1200
1000
=
=
=
=
0V ,
f = 1M H z
C gs + C gd , Cds S H O R TE D
C gd
C ds + C gd
-V G S , Gate-to-Source Voltage (V)
1400
C , C apacitanc e (pF )
P-Channel
C is s
800
C os s
600
400
C rs s
200
0
A
1
10
100
I D = -2.9A
V D S = -16V
8
6
4
2
A
0
0
5
10
15
20
25
30
Q G , Total Gate Charge (nC)
- -V
D S , D rain-to-S ource V oltage (V )
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7317
Package Outline
SO8 Outline
DIM
D
-B-
5
8
7
6
5
1
2
3
0.25 (.010)
4
e
6X
M
A M
MAX
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
-C-
0.10 (.004)
L
8X
A1
B 8X
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
e1
θ
A
0.25 (.010)
MIN
A
e
K x 45°
e1
6
C
8X
M C A S B S
MILLIMETERS
MAX
5
H
E
-A-
INCHES
MIN
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
K
.011
.019
0.28
5.80
0.48
6.20
L
0.16
.050
0.41
1.27
θ
0°
8°
0°
8°
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5
6.46 ( .255 )
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
Part Marking Information
SO8
E X A M P L E : T H IS IS A N IR F 7 1 0 1
312
IN T E R N A T IO N A L
R E C T IF IE R
LOGO
D A T E C O D E (Y W W )
Y = L A S T D IG IT O F T H E Y E A R
W W = W EEK
XX X X
F7101
TOP
PART NUMBER
W AFER
LO T CODE
(L A S T 4 D IG IT S )
BO TTO M
IRF7317
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TE R M IN AL N U M B ER 1
12 .3 ( .48 4 )
11 .7 ( .46 1 )
8.1 ( .318 )
7.9 ( .312 )
F EE D D IR EC T IO N
N O TE S :
1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).
3 . O U TL IN E C O N FO R M S TO E IA -4 8 1 & E IA -54 1 .
330.00
(12.992)
M A X.
14.40 ( .566 )
12.40 ( .488 )
N O T ES :
1. C O N T RO LL IN G D IM E N SIO N : M ILLIM ET ER .
2. O U T LIN E C O N F O R M S T O EIA-48 1 & E IA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
12/97