VISHAY VSKT7216P

VSK.71, .91..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 75/95 A
FEATURES
• High voltage
• Industrial standard package
RoHS
• Thick copper baseplate
COMPLIANT
• UL E78996 approved
• 3500 VRMS isolating voltage
• Totally lead (Pb)-free
• Designed and qualified for industrial level
ADD-A-PAKTM
BENEFITS
• Up to 1600 V
PRODUCT SUMMARY
IT(AV) or IF(AV)
• Fully compatible TO-240AA
75/95 A
• High surge capability
MECHANICAL DESCRIPTION
• Easy mounting on heatsink
The Generation 5 of ADD-A-PAKTM modules combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread. The Generation 5 of AAP modules is
manufactured without hard mold, eliminating in this way any
possible direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
• Al203 DBC insulator
• Heatsink grounded
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VSK.71
VSK.91
75
95
IT(AV) or IF(AV)
85 °C
IO(RMS)
As AC switch
165
210
ITSM,
IFSM
50 Hz
1665
1785
60 Hz
1740
1870
50 Hz
13.86
15.91
60 Hz
12.56
14.52
138.6
159.1
I2 t
I2√t
VRRM
TStg
TJ
Document Number: 94421
Revision: 24-Apr-08
Range
UNITS
A
kA2s
kA2√s
400 to 1600
V
- 40 to 125
°C
For technical questions, contact: [email protected]
www.vishay.com
1
VSK.71, .91..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
04
400
500
400
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
VSK.71/.91
IRRM,
IDRM
AT 125 °C
mA
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
(thyristors)
IT(AV)
Maximum average forward current
(diodes)
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
TEST CONDITIONS
VSK.71 VSK.91 UNITS
180° conduction, half sine wave,
TC = 85 °C
IO(RMS)
I(RMS)
or
I(RMS)
75
95
165
210
1665
1785
1740
1870
A
t = 10 ms
t = 8.3 ms
ITSM
or
IFSM
Maximum peak, one-cycle
non-repetitive on-state
or forward current
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2√t for fusing
I2√t (1)
VT(TO) (2)
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
rt (2)
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of
rise of turned on current
No voltage
reapplied
100 % VRRM
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
TJ = 25 °C
no voltage reapplied
No voltage
reapplied
100 % VRRM
reapplied
Initial TJ =
TJ maximum
TJ = 25 °C, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
TJ = TJ maximum
Low level (3)
High level (4)
Low level (3)
High level (4)
TJ = TJ maximum
TJ = TJ maximum
1400
1500
1470
1570
1850
2000
1940
2100
13.86
15.91
12.56
14.52
9.80
11.25
8.96
10.27
17.11
20.00
15.60
18.30
138.6
159.1
0.82
0.80
0.85
0.85
3.00
2.40
2.90
2.25
1.59
1.58
VTM
ITM = π x IT(AV)
VFM
IFM = π x IF(AV)
dI/dt
TJ = 25 °C, from 0.67 VDRM,
ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 µs, tp > 6 µs
150
TJ = 25 °C
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
250
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
Notes
(1) I2t for time t = I2√t x √t
x
x
(2) Average power = V
2
T(TO) x IT(AV) + rt x (IT(RMS))
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2
(3)
(4)
kA2s
kA2√s
V
mΩ
V
A/µs
mA
16.7 % x π x IAV < I < π x IAV
I > π x IAV
For technical questions, contact: [email protected]
Document Number: 94421
Revision: 24-Apr-08
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
Vishay High Power Products
TM
(ADD-A-PAK Generation 5 Power Modules),
75/95 A
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
VSK.71 VSK.91
PGM
12
PG(AV)
3.0
IGM
3.0
- VGM
10
Maximum peak gate current
Maximum peak negative gate voltage
TEST CONDITIONS
Maximum gate voltage required to trigger
VGT
Anode supply = 6 V
resistive load
TJ = 25 °C
V
1.7
270
TJ = - 40 °C
IGT
A
2.5
TJ = 125 °C
Maximum gate current required to trigger
W
4.0
TJ = - 40 °C
UNITS
Anode supply = 6 V
resistive load
TJ = 25 °C
mA
150
TJ = 125 °C
80
Maximum gate voltage that will not trigger
VGD
TJ = 125 °C, rated VDRM applied
0.25
V
Maximum gate current that will not trigger
IGD
TJ = 125 °C, rated VDRM applied
6
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.71 VSK.91 UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted
Maximum critical rate of rise of off-state voltage
dV/dt (1)
15
mA
2500 (1 min)
3500 (1 s)
V
500
V/µs
VSK.71 VSK.91
UNITS
- 40 to 125
°C
TJ = 125 °C, linear to 0.67 VDRM
Note
(1) Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT91/16AS90
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction operating and storage
emperature range
TEST CONDITIONS
TJ, TStg
Maximum internal thermal resistance,
junction to case per module
RthJC
DC operation
Typical thermal resistance, case to heatsink
RthCS
Mounting surface flat, smooth and greased
0.165
busbar
5
Nm
3
Approximate weight
Case style
K/W
0.1
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
to heatsink
Mounting torque ± 10 %
0.135
JEDEC
110
g
4
oz.
TO-240AA
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.71
0.06
0.07
0.09
0.12
0.18
0.04
0.08
0.10
0.13
0.18
VSK.91
0.04
0.05
0.06
0.08
0.12
0.03
0.05
0.06
0.08
0.12
UNITS
°C/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94421
Revision: 24-Apr-08
For technical questions, contact: [email protected]
www.vishay.com
3
VSK.71, .91..PbF Series
Maximum Allowable Case Temperature (°C)
130
VSK.71.. Series
RthJC (DC) = 0.33 K/ W
120
110
Cond uction Angle
100
90
30°
60°
90°
80
120°
180°
70
0
10
20
30
40
50
60
70
80
Maximum Average On-state Power Loss (W)
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
Vishay High Power Products
140
DC
180°
120°
90°
60°
30°
120
100
80
RMS Limit
60
Conduction Period
40
VSK.71.. Series
Per Junction
TJ = 125°C
20
0
0
20
VSK.71.. Series
R thJC (DC) = 0.33 K/ W
120
110
Cond uction Period
100
90
30°
80
60°
90°
120°
DC
180°
70
0
20
40
60
80
100
180°
120°
90°
60°
30°
RMS Limit
40
Conduction Angle
VSK.71.. Series
Per Junction
TJ = 125°C
20
0
0
10
20
30
40
50
60
120
70
At Any Ra ted Loa d Condition And With
Rated VRRM App lied Following Surg e.
Initial TJ= 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
1500
1400
1300
1200
1100
1000
900
VSK.71.. Series
Per Junc tion
800
700
1
10
100
80
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
120
60
100
Numb er Of Eq ua l Amp litud e Half Cyc le Current Pulses (N)
Fig. 2 - Current Ratings Characteristics
80
80
1600
120
Average On-state Current (A)
100
60
Fig. 4 - On-State Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
Fig. 1 - Current Ratings Characteristics
130
40
Average On-state Current (A)
Average On-state Current (A)
1800
1600
1400
Maximum Non Rep etitive Surg e Current
Versus Pulse Train Duration. Control
Of Conduc tion May Not Be Ma intained .
Initial TJ= 125°C
No Volta ge Reap plied
Ra ted V RRMReap p lied
1200
1000
800
VSK.71.. Series
Per Junction
600
0.01
0.1
1
Average On-state Current (A)
Pulse Train Duration (s)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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For technical questions, contact: [email protected]
Document Number: 94421
Revision: 24-Apr-08
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
Vishay High Power Products
TM
(ADD-A-PAK Generation 5 Power Modules),
75/95 A
=
0.
/W
1K
W
K/
0.
4
W
K/
3
0.
200
SA
R th
180°
120°
90°
60°
30°
2
0.
K/
W
0.
5
K/
W
0.7
K/
W
150
ta
el
-D
R
Maximum Total On-sta te Power Lo ss (W)
250
1K
/W
100
Conduction Angle
1.5
K/ W
VSK.71.. Series
Per Mod ule
TJ = 125°C
50
3 K/ W
0
0
20
40
60
80 100 120 140 160 180
0
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total RMSOutp ut Current (A)
Fig. 7 - On-State Power Loss Characteristics
180°
(Sine)
180°
(Rec t)
=
1
0.
K/
W
0.
3
200
0.5
K/ W
2 x VSK.71.. Series
Single Phase Bridge
Connected
T J = 125°C
R
300
100
lt a
e
-D
0.
2
W
K/
400
A
hS
500
Rt
Maximum Total Power Loss (W)
600
K/
W
1 K/
W
2 K/ W
0
0
20
40
60
0
80 100 120 140 160 180
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 8 - On-State Power Loss Characteristics
700
R
600
SA
th
Maximum Total Power Loss (W)
800
500
120°
(Rect)
400
0.
2
=
0.
1
K/
W
K/
W
-D
el
ta
0.3
K/
W
300
3 x VSK.71.. Series
Three Pha se Brid ge
Connected
TJ = 125°C
200
100
R
0.5
K/ W
1 K/ W
0
0
40
80
120
160
Total Output Current (A)
200
240
0
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94421
Revision: 24-Apr-08
For technical questions, contact: [email protected]
www.vishay.com
5
VSK.71, .91..PbF Series
VSK.91.. Series
RthJC (DC) = 0.27 K/ W
120
110
Cond uc tion Angle
100
90
30°
60° 90°
120°
80
180°
70
0
20
40
60
80
100
Maximum Average On-state Power Loss (W)
130
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
DC
180°
120°
90°
60°
30°
160
140
120
100
RMS Limit
80
Conduction Period
60
VSK.91.. Series
Per Junc tion
TJ = 125°C
40
20
0
0
20
40
60
80
100 120 140 160
Average On-state Current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 13 - On-State Power Loss Characteristics
130
VSK.91.. Series
R thJC (DC) = 0.27 K/ W
120
110
Conduc tion Period
100
90
30°
60°
90°
120°
80
180°
DC
70
0
20
40
60
80
100
80
RMS Limit
60
Conduc tio n Angle
40
VSK.91.. Series
Per Junction
TJ = 125°C
20
0
0
20
40
1400
60
80
@60 Hz 0.0083 s
@50 Hz 0.0100 s
1300
1200
1100
1000
900
VSK.91.. Series
Per Junction
800
700
1
10
100
100
Fig. 14 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
140
120
At Any Rated Loa d Condition And With
Rated V RRM Applied Following Surg e.
Initial TJ = 125°C
1500
Numb er Of Eq ua l Amp litud e Half Cyc le Current Pulses (N)
Fig. 11 - Current Ratings Characteristics
180°
120°
90°
60°
30°
1600
100 120 140 160
Average On-state Current (A)
Maximum Avera ge On-sta te Power Loss (W)
180
Average On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Vishay High Power Products
1800
1600
1400
Ma ximum Non Repetitive Surg e Current
Versus Pulse Train Duration. Control
Of Cond uc tion Ma y Not Be Ma intained .
Initial TJ= 125°C
No Voltage Reap p lied
Ra ted VRRM Reap p lied
1200
1000
800
VSK.91.. Series
Per Junction
600
0.01
0.1
1
Average On-state Current (A)
Pulse Train Duration (s)
Fig. 12 - On-State Power Loss Characteristics
Fig. 15 - Maximum Non-Repetitive Surge Current
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For technical questions, contact: [email protected]
Document Number: 94421
Revision: 24-Apr-08
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
Vishay High Power Products
TM
(ADD-A-PAK Generation 5 Power Modules),
75/95 A
VSK.91.. Series
Per Mod ule
TJ = 125°C
50
0.
5K
/W
0.7
K/
W
1K
/W
1.5 K
/W
R
100
a
Conduc tion Angle
K/
W
e lt
-D
150
K/
W
W
K/
200
0.
3
1
0.
250
0.
2
=
180°
120°
90°
60°
30°
SA
300
R th
Maximum Total On-state Power Loss (W)
350
3 K/ W
0
0
40
80
120
160
200
0
240
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total RMSOutp ut Current (A)
Fig. 16 - On-State Power Loss Characteristics
180°
(Sine)
180°
(Rect)
A
hS
500
Rt
=
1
0.
W
K/
400
0.
2
300
0.
3K
/W
200
0.5
K/ W
1 K/
R
2 x VSK.91.. Series
Single Phase Bridge
Connected
T J = 125°C
100
K/
W
ta
el
-D
Maximum Total Power Loss (W)
600
W
2 K/ W
0
0
40
80
120
160
200
0
Total Output Current (A)
20
40
60
80
100
120
140
Maximum Allowable Amb ient Temperature (°C)
Fig. 17 - On-State Power Loss Characteristics
800
R
700
SA
th
Maximum Total Power Loss (W)
900
=
600
120°
(Rect)
500
0.
1
0.
2K
/W
400
K/
W
-D
el
ta
R
0.3
K/
W
300
3 x VSK.91.. Series
Three Pha se Brid ge
Connected
TJ = 125°C
200
100
0.5
K/ W
1 K/ W
0
0
40
80
120
160
200
Total Output Current (A)
240
280
0
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-State Power Loss Characteristics
Document Number: 94421
Revision: 24-Apr-08
For technical questions, contact: [email protected]
www.vishay.com
7
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
Maximum Reverse Rec overy Cha rge - Qrr (µC)
Vishay High Power Products
Instantaneous On-state Current (A)
1000
100
TJ= 25°C
10
TJ= 125°C
VSK.71.. Series
Per Junction
1
0.5
1
1.5
2
2.5
3
3.5
4
700
50 A
400
100
10
Maximum Reverse Re covery Current - Irr (A)
Instantaneous On-state Current (A)
TJ= 25°C
TJ= 125°C
VSK.91.. Series
Per Junction
2
2.5
3
30
40
50
60
70
80
90 100
140
VSK.71.. Series
VSK.91.. Series
TJ = 125 °C
120
I TM = 200 A
100 A
100
50 A
80
20 A
3.5
Instantaneous On-state Voltage (V)
10 A
60
40
20
10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 20 - On-State Voltage Drop Characteristics
Transient Thermal Impedanc e Z thJC (K/W)
20
Fig. 21 - Recovery Charge Characteristics
100
1.5
10 A
200
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
1000
1
20 A
300
Fig. 19 - On-State Voltage Drop Characteristics
1
0.5
100 A
500
Instantaneous On-state Voltage (V)
10
ITM = 200 A
VSK.71.. Series
VSK.91.. Series
TJ = 125 °C
600
Fig. 22 - Recovery Current Characteristics
1
Steady State Value:
RthJC = 0.33 K/ W
RthJC = 0.27 K/ W
(DC Operation)
VSK.71.. Series
VSK.91.. Series
0.1
Per Junction
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 23 - Thermal Impedance ZthJC Characteristics
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For technical questions, contact: [email protected]
Document Number: 94421
Revision: 24-Apr-08
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
Vishay High Power Products
TM
(ADD-A-PAK Generation 5 Power Modules),
75/95 A
Rectangular gate pulse
a)Recommended load line for
rated di/ dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/ dt: 15 V, 40 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM
(2) PGM
(3) PGM
(4) PGM
= 200 W, tp = 300 µs
= 60 W, tp = 1 ms
= 30 W, tp = 2 ms
= 12 W, tp = 5 ms
(a)
(b)
TJ = -40 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
(3) (2)
(1)
VGD
IGD
0.1
0.001
VSK.71../ .91.. Series
0.01
0.1
Frequenc y Limited by PG(AV)
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 24 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
T
91
1
2
3
/
16
S90
P
4
5
6
1
-
Module type
2
-
Circuit configuration (see end of datasheet)
3
-
Current code (1)
4
-
Voltage code (see Voltage Ratings Table)
5
-
dV/dt code: S90 = dV/dt 1000 V/µs
No letter = dV/dt 500 V/µs
6
-
P = Lead (Pb)-free
(1) Available
with no auxiliary cathode
(for details see dimensions - link at the end of datasheet)
To specify change: 71 to 72
91 to 92
e.g.: VSKT92/16P etc.
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Document Number: 94421
Revision: 24-Apr-08
For technical questions, contact: [email protected]
www.vishay.com
9
VSK.71, .91..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
75/95 A
Vishay High Power Products
CIRCUIT CONFIGURATION
VSKH
VSKT
(1)
(1)
~
2
+
(2)
+
(2)
3
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
-
1
+
(2)
2
2
+
(2)
3
3
4 5
4 5 76
(1)
~
1
2
3
(1)
~
1
1
VSKN
VSKL
4 5
76
(3)
K2 G2
(7) (6)
(3)
G1 K1
(4) (5)
+
(3)
G1 K1
(4) (5)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com
10
http://www.vishay.com/doc?95085
For technical questions, contact: [email protected]
Document Number: 94421
Revision: 24-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1