IRIS-G5624A Features INTEGRATED SWITCHER • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. Package Outline • Low start-up circuit current (100uA max) • Built-in Active Low-Pass Filter for stabilizing the operation in case of light load • Avalanche energy guaranteed MOSFET with high VDSS • The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. • No VDSS de-rating is required. • Built-in constant voltage drive circuit • Built-in step drive circuit • Built-in low frequency PRC mode (≒20kHz) • Various kinds of protection functions • Pulse-by-pulse Overcurrent Protection (OCP) • Overvoltage Protection with latch mode (OVP) TO-220 Fullpack (5 Lead) Key Specifications Type MOSFET VDSS(V) RDS(ON) MAX • Thermal Shutdown with latch mode (TSD) IRIS-G5624A Descriptions 450 1.0Ω AC input(V) Pout(W) Note 1 100±15% 90 120±15% 120 IRIS-G5624A is a hybrid IC consists from power MOSFET and a controller IC, designed for Indirect feed-back QuasiResonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time). Typical Connection Diagram IRIS-G5600 OCP/FB Vin GND S D www.irf.com IRIS-G5624A Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol IDpeak Definition Drain Current *1 IDMAX Maximum switching current *5 Terminals Max. Ratings 1-2 14.4 1-2 EAS Vin Vth Single pulse avalanche energy *2 Input voltage for control part O.C.P/F.B Pin voltage 1-2 4-3 5-3 P D1 Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature P D2 TF Top Tstg Tch Units A A 14.4 1-2 248 35 6 26 1.5 mJ V V W W 4-3 0.8 W -20 ~ +125 -20 ~ +125 -40 ~ +125 150 ℃ ℃ ℃ ℃ *1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve - Note Single Pulse V2-3=0.78V Ta=-20~+125℃ Single Pulse VDD=99V, L=20mH IL peak=4.4A With infintite heatsink Without heatsink Specified by Vin×Iin Refer to recommended operating temperature Fig.1 V2-3 *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. www.irf.com IRIS-G5624A Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25℃, Vin=18V,unless otherwise specified) Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX) Tth(2) TOFF(MIN) Vth(1) Vth(2) IOCP/FB Vin(OVP) Iin(H) Vin(La.OFF) Tj(TSD) Vin(SENSE) - Definition Operation start voltage Operation stop voltage Circuit current in operation Circuit current in non-operation Maximum OFF time Minimum time for input of quasi resonant signals *6 Minimum OFF time *7 O.C.P/F.B Pin threshold voltage 1 O.C.P/F.B Pin threshold voltage 2 O.C.P/F.B Pin extraction current O.V.P operation voltage Latch circuit sustaining current *8 Latch circuit release voltage *8 Thermal shutdown operating temperature Detected Voltage Temperature coefficient of detected voltage MIN 14.4 9 45 Ratings TYP 16 10 - MAX 17.6 11 20 100 55 Units V V mA µA µsec 0.68 1.3 1.2 34 6.6 140 31.7 - 0.73 1.45 1.35 36.5 32 2.5 1 2 0.78 1.6 1.5 39 400 8.4 32.3 - µsec µsec V V mA V µA V ℃ V mV/℃ Test Conditions Vin=0→17.6V Vin=17.6→9V Vin=14V Vin=0→39.0V Vin=39.0→8.5V Vin=39.0→6.6V Vin=31.7→32.3V Vin=31.7→32.3V *6 Recommended operating conditions Tth(2)≧1.0μsec Time for iunput of quasi resonant signals ＶO.C.P/F.B For the quasi resonant signal inputted to OCP/FB Pin Vth(2) at the time of quasi resonant operation, the signal shall 0V be wider thant Tth(2). *7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted. *8 The latch circuit means a circuit operated O.V.P and T.S.D. Electrical Characteristics (for MOSFET) (Ta=25℃) unless otherwise specified Symbol Definition MIN Ratings TYP MAX Units Test Conditions 450 - - V V3- 2 =0V(short) ID=300µA VDSS Drain-to-Source breakdown voltage VDS =450V IDSS Drain leakage current - - 300 µA - - 1 250 Ω nsec V3-2=0V(short) V3-2=10V RDS(ON) On-resistance tf Switching time ID=1.8A Between channel and θch-F Thermal resistance - - 2 ℃/W internal frame www.irf.com IRIS-G5624A IRIS-G5624A IRIS-G5624A MOSFET A.S.O. Curve A.S.O. temperature derating coefficient curve 100 Drain current limit by ON resistance 80 0.1ms 10 1ms Drain CurrentD [A] I A.S.O. temperature derating coefficient[%] 100 60 40 1 ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use. 0.1 20 0 0 20 40 60 80 100 120 0.01 1 Internal frame temperature TF [℃] 10 100 D rain-to-Source V oltage V D S[V ] 1000 IRIS-G5624A Maximum Switching current derating curve T a=‐20 ～+125 ℃ IR IS -G 5624A A valanche energy derating curve 16.0 100 EAS temperature derating coefficient [%] Maximum Switchng Current I DMAX [A] 14.0 12.0 10.0 8.0 6.0 4.0 80 60 40 20 2.0 0.0 0.70 0 0.80 0.90 1.00 V2-3 [V] 1.10 1.20 25 50 75 100 125 150 C hannel tem perature T ch [℃ ] www.irf.com IRIS-G5624A IRIS-G5624A MOSFET Ta-PD1 Curve IRIS-G5624A MIC TF-PD2 Curve 0.9 30 PD1=26[W] PD2=0.8[W] 0.8 25 Power dissipation P D2[W] With infinite heatsink 20 15 10 0.6 0.5 0.4 0.3 0.2 Without heatsink 5 0.1 PD1=1.5[W] 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Internal frame temperature TF[℃] Ambient temperature Ta[℃] IRIS-G5624A Transient thermal resistance curve 10 Transient thermal resistance θch-c[℃/W] Power dissipation P D1[W] 0.7 1 0.1 0.01 0.001 1µ 10µ 100µ 1m 10m 100m tim e t [sec] www.irf.com IRIS-G5624A Block Diagram 4 Vin START 3 D LATCH O.V.P. DRIVE REG. 2 S T.S.D Vth(1) 1 OCP/FB + O.S.C - Vth(2) + 5 GND Lead Assignments Pin No. 1 2 3 4 Symbol D S GND Vin Description Drain Pin Source Pin Ground Pin Power supply Pin 5 OCP/FB Overcurrent / Feedback Pin Function MOSFET drain MOSFET source Ground Input of power supply for control circuit Input of overcurrent detection signal / constant voltage control signal Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit D S SD – Step drive circuit GND Vin OCP/FB www.irf.com IRIS-G5624A Case Outline 4.2 ±0.2 φ3.2 ±0.2 16.9 ±0.3 7.9 ±0.2 4 ±0.2 2.8 ±0.2 IRIS R-end (4.6) 0.94 ±0.15 2-(R1) +0.2 0.85 -0.1 8.7 ±0.5 4.1 ±0.5 2.6 ±0.1 +0.2 0.45 -0.1 5.08 ±0.6 4xp1.7±0.1=(6.8) 10 ±0.2 0.7 1 2 3 4 5 Material of Pin : Cu Treatment of Pin : Ni plating + solder dip 0.7 a：Type Number G5624A b：Lot Number 1st letter：The last digit of year 2nd letter：Month 1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec. 3rd & 4th letter：Day Arabic Numerals Weight : Approx. 2.3g Dimensions in mm DWG.No.：TG3A-1128 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information. www.irf.com