FDMS86101 N-Channel PowerTrench® MOSFET 100 V, 49 A, 8 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 8 m: at VGS = 10 V, ID = 13 A Max rDS(on) = 13.5 m: at VGS = 6 V, ID = 9.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design Application 100% UIL tested DC-DC Conversion RoHS Compliant Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 49 80 (Note 1a) 12.4 (Note 3) 135 -Pulsed A 100 Single Pulse Avalanche Energy EAS Ratings 100 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 104 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 1.2 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS86101 Device FDMS86101 ©2009 Fairchild Semiconductor Corporation FDMS86101 RevC1 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86101 N-Channel PowerTrench® MOSFET May 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 800 nA IGSS Gate to Source Leakage Current, Forward VGS = ±20 V, VDS = 0 V 100 nA 4.0 V 100 V 66 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2.0 2.9 -9 mV/°C VGS = 10 V, ID = 13 A 6.3 8 VGS = 6 V, ID = 9.5 A 8.4 13.5 VGS = 10 V, ID = 13 A, TJ = 125 °C 10.9 14 VDS = 10 V, ID = 13 A 45 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 2255 3000 pF 460 610 pF 30 45 pF : 1.0 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg 15 27 11 20 ns ns 27 44 ns VDD = 50 V, ID = 13 A, VGS = 10 V, RGEN = 6 : 7 13 ns Total Gate Charge VGS = 0 V to 10 V 39 55 nC Qg Total Gate Charge VGS = 0 V to 5 V 22 31 Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 13 A nC 9.5 nC 10.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 13 A (Note 2) 0.8 1.3 IF = 13 A, di/dt = 100 A/Ps V 56 90 ns 61 98 nC Notes: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 30 A, VDD = 75 V, VGS = 10 V ©2009 Fairchild Semiconductor Corporation FDMS86101 RevC1 2 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 VGS = 6 V VGS = 5.5 V ID, DRAIN CURRENT (A) 80 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 60 VGS = 10 V VGS = 5 V 40 20 VGS = 4.5 V 0 0 1 2 3 4 VGS = 4.5 V VGS = 5 V 4 VGS = 5.5 V 3 VGS = 6 V 2 1 0 5 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 80 100 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 40 ID = 13 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX ID = 13 A 30 20 TJ = 125 oC 10 TJ = 25 oC 0 100 125 150 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 100 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 80 ID, DRAIN CURRENT (A) VGS = 10 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX VDS = 5 V 60 TJ = 150 oC 40 TJ = 25 oC 20 TJ = -55 oC 0 2 3 4 5 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.0 6 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDMS86101 RevC1 3 1.2 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 13 A VDD = 50 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V VDD = 25 V 6 4 1000 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 10 0.1 40 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics 100 90 ID, DRAIN CURRENT (A) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 0.001 0.01 0.1 1 75 60 45 30 o 10 0 25 100 50 P(PK), PEAK TRANSIENT POWER (W) 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s RTJA = 125 oC/W 10 s DC o TA = 25 C 1 10 100 500 150 2000 1000 VGS = 10 V SINGLE PULSE RTJA = 125 oC/W TA = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMS86101 RevC1 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 1 ms 0.1 100 o 10 0.01 0.01 75 Tc, CASE TEMPERATURE ( C) 200 100 0.1 VGS = 6 V RTJC = 1.2 C/W 15 Figure 9. Unclamped Inductive Switching Capability 1 VGS = 10 V Limited by Package tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 100 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE 0.001 0.0005 -3 10 o RTJA = 125 C/W -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMS86101 RevC1 5 www.fairchildsemi.com FDMS86101 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS86101 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMS86101 RevC1 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 ©2009 Fairchild Semiconductor Corporation FDMS86101 Rev.C1 7 www.fairchildsemi.com FDMS86101 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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