SSM3K37MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K37MFV High Speed Switching Applications Analog Switch Applications 0.22±0.05 1 2 3 Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±10 V ID IDP 250 500 mA 150 mW DC Pulse Drain current Drain power dissipation (Ta = 25°C) PD (Note 1) 0.5±0.05 Symbol 0.13±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics VESM 0.32±0.05 RDS(ON) = 5.60Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20Ω (max) (@VGS = 4.5 V) 0.8±0.05 0.4 Low ON-resistance 1.2±0.05 0.4 • 0.8±0.05 1.5-V drive 1.2±0.05 • nit: mm 1.Gate 2.Source 3.Drain Channel temperature Tch 150 °C JEDEC - Storage temperature Tstg −55 to 150 °C JEITA - TOSHIBA 2-1L1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.5mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1:Mounted on a FR4 board (25.4 mm × 25.4 mm × 1.6 mm) 0.5mm 0.45mm 0.45mm 0.4mm Marking Equivalent Circuit 3 3 SU 1 2 1 2 1 2009-11-13 SSM3K37MFV Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = -10 V 12 ⎯ ⎯ Drain cutoff current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±1 μA 0.35 ⎯ 1.0 V 0.14 0.28 ⎯ S ID = 100 mA, VGS = 4.5 V (Note 2) ⎯ 1.65 2.20 ID = 50 mA, VGS = 2.5 V (Note 2) ⎯ 2.16 3.02 ID = 20 mA, VGS = 1.8 V (Note 2) ⎯ 2.66 4.05 ID = 10 mA, VGS = 1.5 V (Note 2) Drain-source breakdown voltage Gate threshold voltage Vth VDS = 3 V, ID = 1 mA Forward transfer admittance |Yfs| VDS = 3 V, ID = 100mA Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Switching time (Note 2) VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 3.07 5.60 ⎯ 12 ⎯ ⎯ 5.5 ⎯ ⎯ 4.1 ⎯ Turn-on time ton VDD = 10 V, ID = 100 mA ⎯ 18 ⎯ Turn-off time toff VGS = 0 to 2.5 V, RG = 50 Ω ⎯ 36 ⎯ ID = -250 mA, VGS = 0 V ⎯ -0.9 -1.2 Drain-source forward voltage VDSF (Note 2) V Ω pF ns V Note2: Pulse test Switching Time Test Circuit (a) Test Circuit 2.5 V OUT 10 μs RG IN 0 (b) VIN VDD = 10 V RG = 50 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 2.5 V 0V (c) VOUT VDD 90% 10% VDD 90% 10% VDS (ON) tr ton tf toff Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Do not use this device under avalanche mode. It may cause the device to break down. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2009-11-13 SSM3K37MFV ID – VDS ID – VGS 500 1000 (mA) 400 4.5 V 2.5 V 100 ID Ta = 100 °C 300 1.8 V Drain current Drain current ID (mA) 10 V 1.5 V 200 VGS = 1.2 V 100 0 Common Source Ta = 25 °C 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 10 1 − 25 °C 25 °C 0.1 Common Source VDS = 3 V 0.01 0 1.0 1.0 (V) Gate-source voltage RDS (ON) – VGS (V) Common Source Common Source 5 4 25 °C 3 Ta = 100 °C 2 − 25 °C 1 0 2 4 6 Gate-source voltage 8 VGS Ta = 25°C 5 Drain-source ON-resistance RDS (ON) (Ω) Drain-source ON-resistance RDS (ON) (Ω) VGS 6 ID =100mA 4 1.5 V 1.8 V 3 2.5V 2 VGS = 4.5Ｖ 1 0 10 0 (V) 100 200 RDS (ON) – Ta ID 3 100m A / 4.5 V 1 0 50 Ambient temperature (mA) VDS = 3 V Vth (V) Gate threshold voltage 50m A / 2.5 V 2 500 Common Source ID = 10m A / VGS = 1.5 V 20m A / 1.8 V 4 400 Vth – Ta 1.0 Common Source 0 −50 300 Drain current 5 Drain-source ON-resistance RDS (ON) (Ω) 3.0 RDS (ON) – ID 6 0 2.0 100 Ta ID = 1 mA 0.5 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2009-11-13 IDR – VDS |Yfs| – ID 1000 1000 (mA) Common Source VDS = 3 V Ta = 25°C IDR 300 Drain reverse current Forward transfer admittance ⎪Yfs⎪ (mS) SSM3K37MFV 100 30 10 100 10 1 Drain current ID 100 25 °C 10 D 1 S –0.5 –1.0 Drain-source voltage (mA) C – VDS VDS –1.5 (V) t – ID 1000 100 IDR G −25 °C 0.1 0 1000 Common Source VGS = 0 V Ta =100 °C Common Source toff VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 50Ω (ns) 30 Ciss Switching time Capacitance C t (pF) 50 10 Coss 5 Common Source 3 Crss Ta = 25°C f = 1 MHz VGS = 0 V 1 0.1 1 10 Drain-source voltage ton 10 tr 1 100 VDS tf 100 (V) 1 10 Drain current 100 ID 1000 (mA) PD – Ta Drain power dissipation PD (mW) 250 Mounted on a FR4 board 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.585 mm ) 200 150 100 50 0 -40 -20 0 20 40 60 80 Ambient temperature 100 120 140 Ta (°C) 160 4 2009-11-13 SSM3K37MFV RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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